Thermal Coupling

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D.t. Zweidinger - One of the best experts on this subject based on the ideXlab platform.

  • Equivalent circuit modeling of static substrate Thermal Coupling using VCVS representation
    IEEE Journal of Solid-State Circuits, 2002
    Co-Authors: D.j. Walkey, R.g. Dickson, J.s. Brodsky, D.t. Zweidinger
    Abstract:

    A new method is described which allows substrate Thermal Coupling between active devices to be accurately represented in a circuit simulation environment. The method, based on a substrate Thermal equivalent circuit containing resistors and voltage-controlled voltage sources, allows for exact representation of substrate Thermal Coupling at any number of evaluation points. The topology of the equivalent circuit and derivation of its coefficients is described, and application of the technique to inter- and intradevice Thermal effects is illustrated. The method is applied with a simple self-heating compact model representation to a measured GaAs device characteristic exhibiting gain collapse, and is found to accurately predict electroThermal behavior.

  • A VCVS-based equivalent circuit model for static substrate Thermal Coupling
    Proceedings of the 2001 BIPOLAR BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212), 1
    Co-Authors: D.j. Walkey, R.g. Dickson, J.s. Brodsky, D.t. Zweidinger, T.j. Smy, Robert M. Fox
    Abstract:

    An R/sub TH/-VCVS equivalent circuit approach is presented which allows Thermal Coupling to be accurately represented in circuit simulation. The method is applied to a multi-segment GaAs HBT device, and current gain collapse is successfully predicted with physical model parameters.

D.j. Walkey - One of the best experts on this subject based on the ideXlab platform.

  • Equivalent circuit modeling of static substrate Thermal Coupling using VCVS representation
    IEEE Journal of Solid-State Circuits, 2002
    Co-Authors: D.j. Walkey, R.g. Dickson, J.s. Brodsky, D.t. Zweidinger
    Abstract:

    A new method is described which allows substrate Thermal Coupling between active devices to be accurately represented in a circuit simulation environment. The method, based on a substrate Thermal equivalent circuit containing resistors and voltage-controlled voltage sources, allows for exact representation of substrate Thermal Coupling at any number of evaluation points. The topology of the equivalent circuit and derivation of its coefficients is described, and application of the technique to inter- and intradevice Thermal effects is illustrated. The method is applied with a simple self-heating compact model representation to a measured GaAs device characteristic exhibiting gain collapse, and is found to accurately predict electroThermal behavior.

  • A VCVS-based equivalent circuit model for static substrate Thermal Coupling
    Proceedings of the 2001 BIPOLAR BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212), 1
    Co-Authors: D.j. Walkey, R.g. Dickson, J.s. Brodsky, D.t. Zweidinger, T.j. Smy, Robert M. Fox
    Abstract:

    An R/sub TH/-VCVS equivalent circuit approach is presented which allows Thermal Coupling to be accurately represented in circuit simulation. The method is applied to a multi-segment GaAs HBT device, and current gain collapse is successfully predicted with physical model parameters.

J.s. Brodsky - One of the best experts on this subject based on the ideXlab platform.

  • Equivalent circuit modeling of static substrate Thermal Coupling using VCVS representation
    IEEE Journal of Solid-State Circuits, 2002
    Co-Authors: D.j. Walkey, R.g. Dickson, J.s. Brodsky, D.t. Zweidinger
    Abstract:

    A new method is described which allows substrate Thermal Coupling between active devices to be accurately represented in a circuit simulation environment. The method, based on a substrate Thermal equivalent circuit containing resistors and voltage-controlled voltage sources, allows for exact representation of substrate Thermal Coupling at any number of evaluation points. The topology of the equivalent circuit and derivation of its coefficients is described, and application of the technique to inter- and intradevice Thermal effects is illustrated. The method is applied with a simple self-heating compact model representation to a measured GaAs device characteristic exhibiting gain collapse, and is found to accurately predict electroThermal behavior.

  • A VCVS-based equivalent circuit model for static substrate Thermal Coupling
    Proceedings of the 2001 BIPOLAR BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212), 1
    Co-Authors: D.j. Walkey, R.g. Dickson, J.s. Brodsky, D.t. Zweidinger, T.j. Smy, Robert M. Fox
    Abstract:

    An R/sub TH/-VCVS equivalent circuit approach is presented which allows Thermal Coupling to be accurately represented in circuit simulation. The method is applied to a multi-segment GaAs HBT device, and current gain collapse is successfully predicted with physical model parameters.

R.g. Dickson - One of the best experts on this subject based on the ideXlab platform.

  • Equivalent circuit modeling of static substrate Thermal Coupling using VCVS representation
    IEEE Journal of Solid-State Circuits, 2002
    Co-Authors: D.j. Walkey, R.g. Dickson, J.s. Brodsky, D.t. Zweidinger
    Abstract:

    A new method is described which allows substrate Thermal Coupling between active devices to be accurately represented in a circuit simulation environment. The method, based on a substrate Thermal equivalent circuit containing resistors and voltage-controlled voltage sources, allows for exact representation of substrate Thermal Coupling at any number of evaluation points. The topology of the equivalent circuit and derivation of its coefficients is described, and application of the technique to inter- and intradevice Thermal effects is illustrated. The method is applied with a simple self-heating compact model representation to a measured GaAs device characteristic exhibiting gain collapse, and is found to accurately predict electroThermal behavior.

  • A VCVS-based equivalent circuit model for static substrate Thermal Coupling
    Proceedings of the 2001 BIPOLAR BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212), 1
    Co-Authors: D.j. Walkey, R.g. Dickson, J.s. Brodsky, D.t. Zweidinger, T.j. Smy, Robert M. Fox
    Abstract:

    An R/sub TH/-VCVS equivalent circuit approach is presented which allows Thermal Coupling to be accurately represented in circuit simulation. The method is applied to a multi-segment GaAs HBT device, and current gain collapse is successfully predicted with physical model parameters.

Daniel Schweich - One of the best experts on this subject based on the ideXlab platform.

  • cfd simulations of hydrodynamic Thermal Coupling phenomena in a bubble column with internals
    Aiche Journal, 2010
    Co-Authors: Cedric Labordeboutet, Faical Larachi, Nicolas Dromard, Olivier Delsart, Pierreemmanuel Beliard, Daniel Schweich
    Abstract:

    CFD simulations have been carried out in a full three-dimensional, unsteady, Eulerian framework to simulate hydrodynamic/Thermal Coupling in a bubble column with internals. A first part of the study, dedicated to the hydrodynamic/Thermal Coupling in liquid single-phase flows, showed that assuming constant wall temperature on the internals constitutes a reasonable approximation in lieu of comprehensive simulations encompassing shell flow and coolant flow together. A second part dealing with the hydrodynamics of gas–liquid flows in a bubble column with internals showed that a RNG k–e turbulence model formulation accounting for gas-induced turbulence was a relevant choice. The last part used these conclusions to build a hydrodynamic/Thermal Coupling model of a gas–liquid flow in a bubble column with internals. With a per-phase RNG k–e turbulence model and assuming constant wall temperature, it was possible to simulate heat transfer phenomena consistent with experimentally measured heat transfer coefficients. © 2010 American Institute of Chemical Engineers AIChE J, 2010

  • CFD simulations of hydrodynamic/Thermal Coupling phenomena in a bubble column with internals
    AIChE Journal, 2010
    Co-Authors: Cédric Laborde-boutet, Faical Larachi, Nicolas Dromard, Olivier Delsart, Pierreemmanuel Beliard, Daniel Schweich
    Abstract:

    CFD simulations have been carried out in a full three-dimensional, unsteady, Eulerian framework to simulate hydrodynamic/Thermal Coupling in a bubble column with internals. A first part of the study, dedicated to the hydrodynamic/Thermal Coupling in liquid single-phase flows, showed that assuming constant wall temperature on the internals constitutes a reasonable approximation in lieu of comprehensive simulations encompassing shell flow and coolant flow together. A second part dealing with the hydrodynamics of gas-liquid flows in a bubble column with internals showed that a RNG k-epsilon turbulence model formulation accounting for gas-induced turbulence was a relevant choice. The last part used these conclusions to build a hydrodynamic/Thermal Coupling model of a gas-liquid flow in a bubble column with internals. With a per-phase RNG k-epsilon turbulence model and assuming constant wall temperature, it was possible to simulate heat transfer phenomena consistent with experimentally measured heat transfer coefficients.

  • CFD simulations of hydrodynamic/Thermal Coupling phenomena in a bubble column with internals
    Aiche Journal, 2010
    Co-Authors: Cédric Laborde-boutet, Faical Larachi, Nicolas Dromard, Olivier Delsart, Pierreemmanuel Beliard, Daniel Schweich
    Abstract:

    CFD simulations have been carried out in a full three-dimensional, unsteady, Eulerian framework to simulate hydrodynamic/Thermal Coupling in a bubble column with internals. A first part of the study, dedicated to the hydrodynamic/Thermal Coupling in liquid single-phase flows, showed that assuming constant wall temperature on the internals constitutes a reasonable approximation in lieu of comprehensive simulations encompassing shell flow and coolant flow together. A second part dealing with the hydrodynamics of gas–liquid flows in a bubble column with internals showed that a RNG k–e turbulence model formulation accounting for gas-induced turbulence was a relevant choice. The last part used these conclusions to build a hydrodynamic/Thermal Coupling model of a gas–liquid flow in a bubble column with internals. With a per-phase RNG k–e turbulence model and assuming constant wall temperature, it was possible to simulate heat transfer phenomena consistent with experimentally measured heat transfer coefficients. © 2010 American Institute of Chemical Engineers AIChE J, 2010