The Experts below are selected from a list of 13782 Experts worldwide ranked by ideXlab platform
Koji Sumino - One of the best experts on this subject based on the ideXlab platform.
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Nitrogen effects on Thermal Donor and shallow Thermal Donor in silicon
Journal of Applied Physics, 1995Co-Authors: Deren Yang, Duan-lin Que, Koji SuminoAbstract:Nitrogen effects on Thermal Donors and shallow Thermal Donors in nitrogen‐doped silicon have been investigated by means of the far infrared technique at low temperature (8 K). It is evident that nitrogen can suppress the formation of the Thermal Donor in siliconannealed at 450 °C. Nitrogen atoms are combined with oxygen atoms to produce the oxygen‐nitrogen complexes related with the shallow Thermal Donors. It is believed that nitrogen interacts with the oxygen atoms to form oxygen‐nitrogen complexes so as to reduce the Thermal Donors.
Deren Yang - One of the best experts on this subject based on the ideXlab platform.
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Nitrogen effects on Thermal Donor and shallow Thermal Donor in silicon
Journal of Applied Physics, 1995Co-Authors: Deren Yang, Duan-lin Que, Koji SuminoAbstract:Nitrogen effects on Thermal Donors and shallow Thermal Donors in nitrogen‐doped silicon have been investigated by means of the far infrared technique at low temperature (8 K). It is evident that nitrogen can suppress the formation of the Thermal Donor in siliconannealed at 450 °C. Nitrogen atoms are combined with oxygen atoms to produce the oxygen‐nitrogen complexes related with the shallow Thermal Donors. It is believed that nitrogen interacts with the oxygen atoms to form oxygen‐nitrogen complexes so as to reduce the Thermal Donors.
E. Tuovinen - One of the best experts on this subject based on the ideXlab platform.
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Thermal Donors formation via isoThermal annealing in magnetic czochralski high resistivity silicon
Journal of Applied Physics, 2006Co-Authors: Matthieu Bruzzi, Janne Harkonen, D Menichelli, M Scaringella, E. TuovinenAbstract:A quantitative study about the Thermal activation of oxygen related Thermal Donors in high resistivity p-type magnetic Czochralski silicon has been carried out. Thermal Donor formation has been performed through isoThermal annealing at 430°C up to a total time of 120min. Space charge density after each annealing step has been measured by transient current technique. The localized energy levels related to Thermal double Donors (TD) have been observed and studied in details by Thermally stimulated currents (TSCs) in the range of 10–70K, and activation energies E and effective cross sections σ have been determined for both the emissions TD0∕+ (E=75±5meV, σ=4×10−14cm2) and TD+∕+ (E=170±5meV, σ=2×10−12cm2). The evolution of the space charge density caused by annealing has been unambiguously related to the activation of TDs by means of current deep level transient spectroscopy TSC, and current transients at constant temperature i(t,T). Our results show that TDs compensate the initial boron doping, eventually pr...
Duan-lin Que - One of the best experts on this subject based on the ideXlab platform.
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Nitrogen effects on Thermal Donor and shallow Thermal Donor in silicon
Journal of Applied Physics, 1995Co-Authors: Deren Yang, Duan-lin Que, Koji SuminoAbstract:Nitrogen effects on Thermal Donors and shallow Thermal Donors in nitrogen‐doped silicon have been investigated by means of the far infrared technique at low temperature (8 K). It is evident that nitrogen can suppress the formation of the Thermal Donor in siliconannealed at 450 °C. Nitrogen atoms are combined with oxygen atoms to produce the oxygen‐nitrogen complexes related with the shallow Thermal Donors. It is believed that nitrogen interacts with the oxygen atoms to form oxygen‐nitrogen complexes so as to reduce the Thermal Donors.
Peter Deak - One of the best experts on this subject based on the ideXlab platform.
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shallow Thermal Donor defects in silicon
Physical Review Letters, 1996Co-Authors: Christopher P Ewels, R Jones, Sven Oberg, J Miro, Peter DeakAbstract:An ab initio local density functional cluster program, AIMPRO, is used to examine nitrogen related shallow Thermal Donor defects in silicon. We find the bonding of oxygen with interstitial nitrogen in ${\mathrm{N}}_{i}$- ${\mathrm{O}}_{2i}$ to be almost ``normal,'' but the O atoms move slightly out of their bond centered sites causing the deep Donor level of ${\mathrm{N}}_{i}$ to become shallow. The defect has properties consistent with those experimentally observed for shallow Thermal Donors. We also find that a ${\mathrm{C}}_{i}\mathrm{H}$- ${\mathrm{O}}_{2i}$ defect has very similar electronic properties, and suggest that shallow Thermal Donors do not have a unique composition.