The Experts below are selected from a list of 327 Experts worldwide ranked by ideXlab platform
B E Gnade - One of the best experts on this subject based on the ideXlab platform.
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impact of semiconductor contact metal Thickness Ratio on organic thin film transistor performance
Applied Physics Letters, 2008Co-Authors: S Gowrisanker, Yuming Ai, M A Quevedolopez, Husam N Alshareef, Eric M Vogel, B E GnadeAbstract:Pentacene-based organic thin-film transistors have been fabricated using photolithography and the bottom contact structure using parylene as the gate dielectric. Device performance was optimized by varying the Thickness Ratio of pentacene to Au contacts. Contact resistance dependence on the pentacene/Au Thickness Ratio (r=tpen∕tAu) was extracted using the transfer-length method [D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 2006), pp. 184–199; Necliudov et al., Solid-State Electron. 47, 259 (2003)]. In this paper, we show that the effect of parasitic resistance and pentacene film morphology on device performance can be decoupled. Film morphology and microstructure are reported as a function of pentacene Thickness and the correlation with transistor field-effect mobility is discussed.
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Impact of semiconductor/contact metal Thickness Ratio on organic thin-film transistor performance
Applied Physics Letters, 2008Co-Authors: S Gowrisanker, Husam N Alshareef, Eric M Vogel, Manuel Quevedo-lopez, Huiping Jia, B E GnadeAbstract:Pentacene-based organic thin-film transistors have been fabricated using photolithography and the bottom contact structure using parylene as the gate dielectric. Device performance was optimized by varying the Thickness Ratio of pentacene to Au contacts. Contact resistance dependence on the pentacene/Au Thickness Ratio (r=tpen∕tAu) was extracted using the transfer-length method [D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 2006), pp. 184–199; Necliudov et al., Solid-State Electron. 47, 259 (2003)]. In this paper, we show that the effect of parasitic resistance and pentacene film morphology on device performance can be decoupled. Film morphology and microstructure are reported as a function of pentacene Thickness and the correlation with transistor field-effect mobility is discussed.
Zhang Yao-chun - One of the best experts on this subject based on the ideXlab platform.
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CRITICAL LIMIT OF DIAMETER TO Thickness Ratio FOR AXIALLY LOADED CONCRETE FILLED THIN-WALLED CIRCULAR STEEL TUBES
Engineering mechanics, 2005Co-Authors: Zhang Yao-chunAbstract:An analysis of interaction of thin-walled circular steel tube and filled concrete under axial compression is carried out. Acting force and stress-strain relationship between thin-walled steel tube and concrete is presented. An axially compressive thin-walled steel element on elastic foundation is adopted to deduce the critical stress and critical diameter to Thickness Ratio for circular steel tube in local buckling. It is found that the critical local buckling stress and diameter to Thickness Ratio of circular steel tube are considerably increased by the support of filled concrete. Calculation for short columns using Grade Q235 steel tube filled with Grade C30 concrete indicates that the critical diameter to Thickness Ratio of steel tubes is about 1700.
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Limit of width-Thickness Ratio of steel plates in concrete-filledsquare thin-walled steel tube columns
Journal of the Harbin Institute of Technology, 2004Co-Authors: Zhang Yao-chunAbstract:The local buckling bearing capacity of square thin-walled steel tubes is increased if filled in with concrete. Critical buckling coefficient of thin-walled steel plate in biaxial stress is obtained by interaction analysis of steel tube and concrete. The calculation results indicates that critical local buckling coefficient is a little increased with decreasing of width-Thickness Ratio of thin-walled steel plate, and kept at about10.0. There for, the limit of width-Thickness Ratio of steel plate in concrete-filled square thin-walled steel tube columns can be determined.
S Gowrisanker - One of the best experts on this subject based on the ideXlab platform.
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impact of semiconductor contact metal Thickness Ratio on organic thin film transistor performance
Applied Physics Letters, 2008Co-Authors: S Gowrisanker, Yuming Ai, M A Quevedolopez, Husam N Alshareef, Eric M Vogel, B E GnadeAbstract:Pentacene-based organic thin-film transistors have been fabricated using photolithography and the bottom contact structure using parylene as the gate dielectric. Device performance was optimized by varying the Thickness Ratio of pentacene to Au contacts. Contact resistance dependence on the pentacene/Au Thickness Ratio (r=tpen∕tAu) was extracted using the transfer-length method [D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 2006), pp. 184–199; Necliudov et al., Solid-State Electron. 47, 259 (2003)]. In this paper, we show that the effect of parasitic resistance and pentacene film morphology on device performance can be decoupled. Film morphology and microstructure are reported as a function of pentacene Thickness and the correlation with transistor field-effect mobility is discussed.
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Impact of semiconductor/contact metal Thickness Ratio on organic thin-film transistor performance
Applied Physics Letters, 2008Co-Authors: S Gowrisanker, Husam N Alshareef, Eric M Vogel, Manuel Quevedo-lopez, Huiping Jia, B E GnadeAbstract:Pentacene-based organic thin-film transistors have been fabricated using photolithography and the bottom contact structure using parylene as the gate dielectric. Device performance was optimized by varying the Thickness Ratio of pentacene to Au contacts. Contact resistance dependence on the pentacene/Au Thickness Ratio (r=tpen∕tAu) was extracted using the transfer-length method [D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 2006), pp. 184–199; Necliudov et al., Solid-State Electron. 47, 259 (2003)]. In this paper, we show that the effect of parasitic resistance and pentacene film morphology on device performance can be decoupled. Film morphology and microstructure are reported as a function of pentacene Thickness and the correlation with transistor field-effect mobility is discussed.
Husam N Alshareef - One of the best experts on this subject based on the ideXlab platform.
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impact of semiconductor contact metal Thickness Ratio on organic thin film transistor performance
Applied Physics Letters, 2008Co-Authors: S Gowrisanker, Yuming Ai, M A Quevedolopez, Husam N Alshareef, Eric M Vogel, B E GnadeAbstract:Pentacene-based organic thin-film transistors have been fabricated using photolithography and the bottom contact structure using parylene as the gate dielectric. Device performance was optimized by varying the Thickness Ratio of pentacene to Au contacts. Contact resistance dependence on the pentacene/Au Thickness Ratio (r=tpen∕tAu) was extracted using the transfer-length method [D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 2006), pp. 184–199; Necliudov et al., Solid-State Electron. 47, 259 (2003)]. In this paper, we show that the effect of parasitic resistance and pentacene film morphology on device performance can be decoupled. Film morphology and microstructure are reported as a function of pentacene Thickness and the correlation with transistor field-effect mobility is discussed.
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Impact of semiconductor/contact metal Thickness Ratio on organic thin-film transistor performance
Applied Physics Letters, 2008Co-Authors: S Gowrisanker, Husam N Alshareef, Eric M Vogel, Manuel Quevedo-lopez, Huiping Jia, B E GnadeAbstract:Pentacene-based organic thin-film transistors have been fabricated using photolithography and the bottom contact structure using parylene as the gate dielectric. Device performance was optimized by varying the Thickness Ratio of pentacene to Au contacts. Contact resistance dependence on the pentacene/Au Thickness Ratio (r=tpen∕tAu) was extracted using the transfer-length method [D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 2006), pp. 184–199; Necliudov et al., Solid-State Electron. 47, 259 (2003)]. In this paper, we show that the effect of parasitic resistance and pentacene film morphology on device performance can be decoupled. Film morphology and microstructure are reported as a function of pentacene Thickness and the correlation with transistor field-effect mobility is discussed.
Eric M Vogel - One of the best experts on this subject based on the ideXlab platform.
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impact of semiconductor contact metal Thickness Ratio on organic thin film transistor performance
Applied Physics Letters, 2008Co-Authors: S Gowrisanker, Yuming Ai, M A Quevedolopez, Husam N Alshareef, Eric M Vogel, B E GnadeAbstract:Pentacene-based organic thin-film transistors have been fabricated using photolithography and the bottom contact structure using parylene as the gate dielectric. Device performance was optimized by varying the Thickness Ratio of pentacene to Au contacts. Contact resistance dependence on the pentacene/Au Thickness Ratio (r=tpen∕tAu) was extracted using the transfer-length method [D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 2006), pp. 184–199; Necliudov et al., Solid-State Electron. 47, 259 (2003)]. In this paper, we show that the effect of parasitic resistance and pentacene film morphology on device performance can be decoupled. Film morphology and microstructure are reported as a function of pentacene Thickness and the correlation with transistor field-effect mobility is discussed.
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Impact of semiconductor/contact metal Thickness Ratio on organic thin-film transistor performance
Applied Physics Letters, 2008Co-Authors: S Gowrisanker, Husam N Alshareef, Eric M Vogel, Manuel Quevedo-lopez, Huiping Jia, B E GnadeAbstract:Pentacene-based organic thin-film transistors have been fabricated using photolithography and the bottom contact structure using parylene as the gate dielectric. Device performance was optimized by varying the Thickness Ratio of pentacene to Au contacts. Contact resistance dependence on the pentacene/Au Thickness Ratio (r=tpen∕tAu) was extracted using the transfer-length method [D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 2006), pp. 184–199; Necliudov et al., Solid-State Electron. 47, 259 (2003)]. In this paper, we show that the effect of parasitic resistance and pentacene film morphology on device performance can be decoupled. Film morphology and microstructure are reported as a function of pentacene Thickness and the correlation with transistor field-effect mobility is discussed.
