The Experts below are selected from a list of 88113 Experts worldwide ranked by ideXlab platform

Pooi See Lee - One of the best experts on this subject based on the ideXlab platform.

  • a light stimulated synaptic transistor with synaptic plasticity and memory functions based on ingaznox al2o3 Thin Film Structure
    Journal of Applied Physics, 2016
    Co-Authors: T P Chen, Yong Liu, P. Liu, Qing Zhang, Pooi See Lee
    Abstract:

    In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) Thin Film Structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.

  • A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 Thin Film Structure
    Journal of Applied Physics, 2016
    Co-Authors: Tupei Chen, Yong Liu, P. Liu, Hu Shaogang, Qing Zhang, Pooi See Lee
    Abstract:

    In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) Thin Film Structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.

Yong Liu - One of the best experts on this subject based on the ideXlab platform.

  • a light stimulated synaptic transistor with synaptic plasticity and memory functions based on ingaznox al2o3 Thin Film Structure
    Journal of Applied Physics, 2016
    Co-Authors: T P Chen, Yong Liu, P. Liu, Qing Zhang, Pooi See Lee
    Abstract:

    In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) Thin Film Structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.

  • A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 Thin Film Structure
    Journal of Applied Physics, 2016
    Co-Authors: Tupei Chen, Yong Liu, P. Liu, Hu Shaogang, Qing Zhang, Pooi See Lee
    Abstract:

    In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) Thin Film Structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.

Qing Zhang - One of the best experts on this subject based on the ideXlab platform.

  • a light stimulated synaptic transistor with synaptic plasticity and memory functions based on ingaznox al2o3 Thin Film Structure
    Journal of Applied Physics, 2016
    Co-Authors: T P Chen, Yong Liu, P. Liu, Qing Zhang, Pooi See Lee
    Abstract:

    In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) Thin Film Structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.

  • A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 Thin Film Structure
    Journal of Applied Physics, 2016
    Co-Authors: Tupei Chen, Yong Liu, P. Liu, Hu Shaogang, Qing Zhang, Pooi See Lee
    Abstract:

    In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) Thin Film Structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.

P. Liu - One of the best experts on this subject based on the ideXlab platform.

  • a light stimulated synaptic transistor with synaptic plasticity and memory functions based on ingaznox al2o3 Thin Film Structure
    Journal of Applied Physics, 2016
    Co-Authors: T P Chen, Yong Liu, P. Liu, Qing Zhang, Pooi See Lee
    Abstract:

    In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) Thin Film Structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.

  • A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 Thin Film Structure
    Journal of Applied Physics, 2016
    Co-Authors: Tupei Chen, Yong Liu, P. Liu, Hu Shaogang, Qing Zhang, Pooi See Lee
    Abstract:

    In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) Thin Film Structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.

T P Chen - One of the best experts on this subject based on the ideXlab platform.

  • a light stimulated synaptic transistor with synaptic plasticity and memory functions based on ingaznox al2o3 Thin Film Structure
    Journal of Applied Physics, 2016
    Co-Authors: T P Chen, Yong Liu, P. Liu, Qing Zhang, Pooi See Lee
    Abstract:

    In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) Thin Film Structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.