Thinning Process

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Prabir Daripa - One of the best experts on this subject based on the ideXlab platform.

  • Asymptotic study of film Thinning Process on a spinning annular disk
    Journal of Applied Physics, 2003
    Co-Authors: B S Dandapat, Prabir Daripa, P. C. Ray
    Abstract:

    We consider an axisymmetric flow of a thin liquid film on a rotating annular disk. The effects of surface tension and gravity terms are included. An asymptotic solution for the free surface of the thin film is found using an expansion for the film thickness in powers of a small parameter characterizing the film thickness in comparison to the inner disk radius, and then applying the method of matched asymptotic expansion. The asymptotic solution is capable of predicting several features of spin-coating Processes. For example, we find that the surface tension enhances film Thinning at the central region whereas the gravity does not. The results show that the final film thickness does not depend on the initial distribution of the film thickness (be it uniform or nonuniform) and on the initial amount of liquid deposited. We find that most of the liquid initially deposited on the disk flows out of the disk in a very short time at the initial stages of spinning, regardless of the type of initial distribution of the film thickness. The retention of fluid for nonuniform initial distribution is more than that for uniform distribution at the early stages of the spreading of the thin film.

  • asymptotic study of film Thinning Process on a spinning annular disk
    Journal of Applied Physics, 2003
    Co-Authors: B S Dandapat, Prabir Daripa
    Abstract:

    We consider an axisymmetric flow of a thin liquid film on a rotating annular disk. The effects of surface tension and gravity terms are included. An asymptotic solution for the free surface of the thin film is found using an expansion for the film thickness in powers of a small parameter characterizing the film thickness in comparison to the inner disk radius, and then applying the method of matched asymptotic expansion. The asymptotic solution is capable of predicting several features of spin-coating Processes. For example, we find that the surface tension enhances film Thinning at the central region whereas the gravity does not. The results show that the final film thickness does not depend on the initial distribution of the film thickness (be it uniform or nonuniform) and on the initial amount of liquid deposited. We find that most of the liquid initially deposited on the disk flows out of the disk in a very short time at the initial stages of spinning, regardless of the type of initial distribution of...

B S Dandapat - One of the best experts on this subject based on the ideXlab platform.

  • Asymptotic study of film Thinning Process on a spinning annular disk
    Journal of Applied Physics, 2003
    Co-Authors: B S Dandapat, Prabir Daripa, P. C. Ray
    Abstract:

    We consider an axisymmetric flow of a thin liquid film on a rotating annular disk. The effects of surface tension and gravity terms are included. An asymptotic solution for the free surface of the thin film is found using an expansion for the film thickness in powers of a small parameter characterizing the film thickness in comparison to the inner disk radius, and then applying the method of matched asymptotic expansion. The asymptotic solution is capable of predicting several features of spin-coating Processes. For example, we find that the surface tension enhances film Thinning at the central region whereas the gravity does not. The results show that the final film thickness does not depend on the initial distribution of the film thickness (be it uniform or nonuniform) and on the initial amount of liquid deposited. We find that most of the liquid initially deposited on the disk flows out of the disk in a very short time at the initial stages of spinning, regardless of the type of initial distribution of the film thickness. The retention of fluid for nonuniform initial distribution is more than that for uniform distribution at the early stages of the spreading of the thin film.

  • asymptotic study of film Thinning Process on a spinning annular disk
    Journal of Applied Physics, 2003
    Co-Authors: B S Dandapat, Prabir Daripa
    Abstract:

    We consider an axisymmetric flow of a thin liquid film on a rotating annular disk. The effects of surface tension and gravity terms are included. An asymptotic solution for the free surface of the thin film is found using an expansion for the film thickness in powers of a small parameter characterizing the film thickness in comparison to the inner disk radius, and then applying the method of matched asymptotic expansion. The asymptotic solution is capable of predicting several features of spin-coating Processes. For example, we find that the surface tension enhances film Thinning at the central region whereas the gravity does not. The results show that the final film thickness does not depend on the initial distribution of the film thickness (be it uniform or nonuniform) and on the initial amount of liquid deposited. We find that most of the liquid initially deposited on the disk flows out of the disk in a very short time at the initial stages of spinning, regardless of the type of initial distribution of...

P. C. Ray - One of the best experts on this subject based on the ideXlab platform.

  • Asymptotic study of film Thinning Process on a spinning annular disk
    Journal of Applied Physics, 2003
    Co-Authors: B S Dandapat, Prabir Daripa, P. C. Ray
    Abstract:

    We consider an axisymmetric flow of a thin liquid film on a rotating annular disk. The effects of surface tension and gravity terms are included. An asymptotic solution for the free surface of the thin film is found using an expansion for the film thickness in powers of a small parameter characterizing the film thickness in comparison to the inner disk radius, and then applying the method of matched asymptotic expansion. The asymptotic solution is capable of predicting several features of spin-coating Processes. For example, we find that the surface tension enhances film Thinning at the central region whereas the gravity does not. The results show that the final film thickness does not depend on the initial distribution of the film thickness (be it uniform or nonuniform) and on the initial amount of liquid deposited. We find that most of the liquid initially deposited on the disk flows out of the disk in a very short time at the initial stages of spinning, regardless of the type of initial distribution of the film thickness. The retention of fluid for nonuniform initial distribution is more than that for uniform distribution at the early stages of the spreading of the thin film.

Kazuhiro Yoshikawa - One of the best experts on this subject based on the ideXlab platform.

  • Wet-Chemical Silicon Wafer Thinning Process for High Chip Strength
    ECS Transactions, 2012
    Co-Authors: Kazuhiro Yoshikawa, Naoya Watanabe, Takumi Miyazaki, Masahiro Aoyagi
    Abstract:

    Three-dimensional integration (3D) has been developed as an emerging technology in a semiconductor industry [1,2]. Silicon wafer Thinning is one of the key techniques for 3D integration with through silicon vias (TSVs). In conventional Thinning of silicon wafers, backgrinding has been applied where the backside of a wafer is mechanically ground with a grindstone. However, backgrinding causes micro cracks/grinding traces on the back surface layer of the wafer or defects/damage inside it, resulting in reduced yield and mechanical strength of the wafer/chip. In order to overcome some problems caused by backgrinding, we proposed wet-chemical silicon wafer Thinning Process using HF/HNO3 solutions [3-4]. By optimizing the component ratio of the solution, we also demonstrated a high etching rate (about 800 μm/min) and a uniformity of 3% for the etched samples (6-8 inch wafers). In this study, the effect of wet-chemical silicon wafer Thinning Process on chip strength was investigated. For this investigation, we measured the fracture stress of thinned chip and compared the results with those of various wafer-Thinning methods (Table 1). The 8-inch silicon wafers were thinned down to 100 μm and were then cut into 10 mm-square chip using a conventional dicing saw. The die fracture stress was measured by the three-point bending test (Fig. 1). The die fracture stress was calculated as

  • 3DIC - Damage evaluation of wet-chemical silicon-wafer Thinning Process
    2011 IEEE International 3D Systems Integration Conference (3DIC) 2011 IEEE International, 2012
    Co-Authors: Naoya Watanabe, Takumi Miyazaki, Masahiro Aoyagi, Kazuhiro Yoshikawa
    Abstract:

    We evaluate the surface damage caused by the wet-chemical wafer-Thinning Process by measuring the die fracture stress. The die fracture stress afforded by this Process is higher than those afforded by other methods including backgranding. In addition, we investigate the impact of residual stress, generated by the wet-chemical wafer-Thinning Process, on MOSFET operations. It is found that the change in MOSFET characteristics is very small, even when the wafer is thinned down to 50 μm.

  • Development of damage-less wet-chemical silicon-wafer Thinning Process for three-dimensional integration
    2012 IEEE 62nd Electronic Components and Technology Conference, 2012
    Co-Authors: Naoya Watanabe, Takumi Miyazaki, Masahiro Aoyagi, Kazuhiro Yoshikawa
    Abstract:

    We evaluated the damage of an etched silicon surface after the wet-chemical silicon-wafer Thinning Process. The damage evaluation was carried out by cross-sectional transmission electron microscope (TEM) observation/electron energy-loss spectroscopy (EELS) analysis of the etched surface and measurement of die fracture stress. The results of the TEM observation/EELS analysis indicated the absence of damage layers. The three-point bending test showed that this Process offered a higher die fracture stress than other Processes including backgrinding. We also applied this Process to Thinning of the CMOS wafer and measured the change in the MOSFET characteristics. The change in MOSFET characteristics was found to be very small even when the CMOS wafer was thinned to 50 μm.

Dong-sun Park - One of the best experts on this subject based on the ideXlab platform.

  • ICNN - Modular neural net architecture for one-step Thinning algorithm
    Proceedings of ICNN'95 - International Conference on Neural Networks, 1995
    Co-Authors: Dong-sun Park
    Abstract:

    A one-step parallel Thinning algorithm using a deletion operator with 25 reference pixels and its neural implementation are presented. The one-step algorithm is an improved version of the previous parallel Thinning algorithms in terms of the speed of the Thinning Process and the quality of thinned results. An efficient 2-layer neural net implementation of the one-step Thinning algorithm is presented. The network consists of a module trained with the backpropagation learning rule and modules with hand-crafted weights.