The Experts below are selected from a list of 285 Experts worldwide ranked by ideXlab platform
Chenming Hu - One of the best experts on this subject based on the ideXlab platform.
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Transient Behavior of Subthreshold Characteristics of Fully Depleted
1991Co-Authors: F. Assaderaghi, J. Chen, Ray Solomon, Tung-yi Chan, Ping Keung Ko, Chenming HuAbstract:It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFET's show a Transient Behavior under certain front-gate and back-gate volt- age conditions. The cause of this anomaly is explained, and applications for the above phenomenon are pointed out. Partic- ularly, a simple way to measure the silicon film thickness is suggested.
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Transient Behavior of subthreshold characteristics of fully depleted SOI MOSFETs
IEEE Electron Device Letters, 1991Co-Authors: F. Assaderaghi, J. Chen, Ray Solomon, Ping Keung Ko, T.-y. Chian, Chenming HuAbstract:It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFETs show a Transient Behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested.
A. Kaelin - One of the best experts on this subject based on the ideXlab platform.
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ISCAS - Analysis of the Transient Behavior of unconstrained frequency-domain adaptive filters
Proceedings of IEEE International Symposium on Circuits and Systems - ISCAS '94, 1994Co-Authors: P. Estermann, A. KaelinAbstract:Frequency-domain adaptive filters have gained increased attraction, especially for acoustic applications such as echo canceling, active noise control etc. Nevertheless, a theoretical analysis of their Transient Behavior, which could considerably simplify the design of such filters, is not yet available. For filters which are based on the so-called "overlap-save" technique, we derive analytic expressions describing the Transient Behavior of the averaged parameter vector and the MSE (mean squared error). Similar to the "independence" theory allowing the time-domain LMS (least mean square) algorithm to be analyzed, we propose some well-defined approximations making the analysis tractable. We show that the obtained simple analytic expressions thereof coincide for any reasonable step-size factors with the corresponding simulations. >
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Analysis of the Transient Behavior of unconstrained frequency-domain adaptive filters
Proceedings of IEEE International Symposium on Circuits and Systems - ISCAS '94, 1994Co-Authors: P. Estermann, A. KaelinAbstract:Frequency-domain adaptive filters have gained increased attraction, especially for acoustic applications such as echo canceling, active noise control etc. Nevertheless, a theoretical analysis of their Transient Behavior, which could considerably simplify the design of such filters, is not yet available. For filters which are based on the so-called "overlap-save" technique, we derive analytic expressions describing the Transient Behavior of the averaged parameter vector and the MSE (mean squared error). Similar to the "independence" theory allowing the time-domain LMS (least mean square) algorithm to be analyzed, we propose some well-defined approximations making the analysis tractable. We show that the obtained simple analytic expressions thereof coincide for any reasonable step-size factors with the corresponding simulations.
F. Assaderaghi - One of the best experts on this subject based on the ideXlab platform.
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Transient Behavior of Subthreshold Characteristics of Fully Depleted
1991Co-Authors: F. Assaderaghi, J. Chen, Ray Solomon, Tung-yi Chan, Ping Keung Ko, Chenming HuAbstract:It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFET's show a Transient Behavior under certain front-gate and back-gate volt- age conditions. The cause of this anomaly is explained, and applications for the above phenomenon are pointed out. Partic- ularly, a simple way to measure the silicon film thickness is suggested.
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Transient Behavior of subthreshold characteristics of fully depleted SOI MOSFETs
IEEE Electron Device Letters, 1991Co-Authors: F. Assaderaghi, J. Chen, Ray Solomon, Ping Keung Ko, T.-y. Chian, Chenming HuAbstract:It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFETs show a Transient Behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested.
Alexander M Berezhkovskii - One of the best experts on this subject based on the ideXlab platform.
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discriminating between anomalous diffusion and Transient Behavior in microheterogeneous environments
Biophysical Journal, 2014Co-Authors: Alexander M Berezhkovskii, Leonardo Dagdug, Sergey M BezrukovAbstract:Diffusion in macrohomogeneous and microheterogeneous media can be described as effective free diffusion only at sufficiently long times. At intermediate times, the mean-square displacement of a diffusing object shows a Transient Behavior that can be misinterpreted as anomalous subdiffusion. We discuss how to discriminate between the two.
Sergey M Bezrukov - One of the best experts on this subject based on the ideXlab platform.
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discriminating between anomalous diffusion and Transient Behavior in microheterogeneous environments
Biophysical Journal, 2014Co-Authors: Alexander M Berezhkovskii, Leonardo Dagdug, Sergey M BezrukovAbstract:Diffusion in macrohomogeneous and microheterogeneous media can be described as effective free diffusion only at sufficiently long times. At intermediate times, the mean-square displacement of a diffusing object shows a Transient Behavior that can be misinterpreted as anomalous subdiffusion. We discuss how to discriminate between the two.
