The Experts below are selected from a list of 234 Experts worldwide ranked by ideXlab platform

J.a. Cooper - One of the best experts on this subject based on the ideXlab platform.

  • Demonstration and Characterization of Bipolar Monolithic Integrated Circuits in 4H-SiC
    IEEE Transactions on Electron Devices, 2008
    Co-Authors: Jeong-youb Lee, Shakti Singh, J.a. Cooper
    Abstract:

    A monolithic bipolar integrated circuit technology employing transistor-transistor logic (TTL) is demonstrated in 4H-SiC for the first time. Operating on a 15-V power supply, as required by the higher base-emitter voltage of SiC bipolar transistors, TTL inverters with a fan-out of ten exhibit high-level noise margin (NMH) of 1.5 V and low-level noise margin (NML,) of 3.9 V at room temperature. The transient response of the fabricated SiC TTL gates is also characterized. The circuits operate satisfactorily from room temperature to above 300degC, suggesting that SiC bipolar integrated circuits are promising candidates for high-temperature applications.

Shakti Singh - One of the best experts on this subject based on the ideXlab platform.

  • High Temperature Simulation of 4H-SiC Bipolar Circuits
    IEEE Journal of the Electron Devices Society, 2015
    Co-Authors: Hazem Elgabra, Shakti Singh
    Abstract:

    High speed and high-temperature operation capabilities are desirable features of integrated circuits. Due to their innate electrical and physical properties, silicon devices face significant hurdles at elevated temperatures, while silicon carbide devices perform remarkably well in such environments. This paper studies the performance of various high-speed 4H-SiC bipolar logic families including transistor–transistor logic, Schottky transistor–transistor logic, and emitter-coupled logic. All logic circuits have been optimized for high speed and high-temperature operations. Gate delays as low as 2.7 ns at room temperature and less than 5 ns at 500 °C have been achieved without sacrificing fan-out capability and noise margin stability.

  • Demonstration and Characterization of Bipolar Monolithic Integrated Circuits in 4H-SiC
    IEEE Transactions on Electron Devices, 2008
    Co-Authors: Jeong-youb Lee, Shakti Singh, J.a. Cooper
    Abstract:

    A monolithic bipolar integrated circuit technology employing transistor-transistor logic (TTL) is demonstrated in 4H-SiC for the first time. Operating on a 15-V power supply, as required by the higher base-emitter voltage of SiC bipolar transistors, TTL inverters with a fan-out of ten exhibit high-level noise margin (NMH) of 1.5 V and low-level noise margin (NML,) of 3.9 V at room temperature. The transient response of the fabricated SiC TTL gates is also characterized. The circuits operate satisfactorily from room temperature to above 300degC, suggesting that SiC bipolar integrated circuits are promising candidates for high-temperature applications.

Roberto Sorrentino - One of the best experts on this subject based on the ideXlab platform.

  • PIN diode-based 4-channel switched filter bank with low-power, TTL-compatible Driver
    IEEE Transactions on Microwave Theory and Techniques, 2014
    Co-Authors: Fabrizio Gentili, Laura Urbani, Giovanni Bianchi, Luca Pelliccia, Roberto Sorrentino
    Abstract:

    The design of a four-channel switched filter bank in the S- and C-band using p-i-n-diode switches is described. Narrowband filters (3.2%-3.5%) are designed on suspended substrate stripline. The biasing circuit allows the switches to be driven with transistor-transistor-logic-compatible voltages and minimum biasing current. The average insertion loss measured is 3.6 dB corresponding to a Q-factor of 580. Spurious responses were suppressed from dc to roughly 19 GHz.

Jeong-youb Lee - One of the best experts on this subject based on the ideXlab platform.

  • Demonstration and Characterization of Bipolar Monolithic Integrated Circuits in 4H-SiC
    IEEE Transactions on Electron Devices, 2008
    Co-Authors: Jeong-youb Lee, Shakti Singh, J.a. Cooper
    Abstract:

    A monolithic bipolar integrated circuit technology employing transistor-transistor logic (TTL) is demonstrated in 4H-SiC for the first time. Operating on a 15-V power supply, as required by the higher base-emitter voltage of SiC bipolar transistors, TTL inverters with a fan-out of ten exhibit high-level noise margin (NMH) of 1.5 V and low-level noise margin (NML,) of 3.9 V at room temperature. The transient response of the fabricated SiC TTL gates is also characterized. The circuits operate satisfactorily from room temperature to above 300degC, suggesting that SiC bipolar integrated circuits are promising candidates for high-temperature applications.

Tyson S Hall - One of the best experts on this subject based on the ideXlab platform.

  • an introductory digital design course using a low cost autonomous robot
    IEEE Transactions on Education, 2002
    Co-Authors: Kimberly Newman, James O Hamblen, Tyson S Hall
    Abstract:

    This paper describes a new digital design laboratory developed for undergraduate students in this electrical and computer engineering curriculum. A top-down rapid prototyping approach with commercial computer-aided design tools and field-programmable logic devices (FPLDs) is used for laboratory projects. Students begin with traditional transistor-transistor logic-based projects containing a few gates and progress to designing a simple 16-bit computer, using very high-speed integrated circuits hardware description language (VHDL) synthesis tools and an FPLD. To help motivate students, the simple computer design is programmed to control a small autonomous robot with two servo drive motors and several sensors. The laboratory concludes with a team-based design project using the robot.