The Experts below are selected from a list of 2187 Experts worldwide ranked by ideXlab platform
Yi Xie - One of the best experts on this subject based on the ideXlab platform.
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large negative magnetoresistance induced by anionic solid solutions in two dimensional spin frustrated Transition Metal Chalcogenides
Physical Review Letters, 2014Co-Authors: Yuqiao Guo, Jun Dai, Jiyin Zhao, Lidong Zhang, Wei Ning, Mingliang Tian, Xiao Cheng Zeng, Yi XieAbstract:We report an anionic solid solution process that induces frustrated magnetic structures within two-dimensional Transition Metal Chalcogenides, which leads to huge negative magnetoresistance effects. Ultrathin nanosheets of TiTe(2-x)I(x) solid solutions, which are a new class of inorganic two-dimensional magnetic material, exhibit negative magnetoresistance with a value of up to -85%, due to the spin-dependent scattering effects of local Ti(3+) 3d(1) moments that are antiferromagnetically coupled. Moreover, TiTe(2-x)I(x) serials show unique transport behaviors with continuous evolution from Metallic to semiconducting states. We anticipate that anionic doping will be a powerful tool for optimizing the intrinsic physical properties of two-dimensional Transition Metal chalcogenide system.
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large negative magnetoresistance induced by anionic solid solutions in two dimensional spin frustrated Transition Metal Chalcogenides
Physical Review Letters, 2014Co-Authors: Yuqiao Guo, Jun Dai, Jiyin Zhao, Lidong Zhang, Wei Ning, Mingliang Tian, Xiao Cheng Zeng, Yi XieAbstract:We report an anionic solid solution process that induces frustrated magnetic structures within two-dimensional Transition Metal Chalcogenides, which leads to huge negative magnetoresistance effects. Ultrathin nanosheets of ${\mathrm{TiTe}}_{2\ensuremath{-}x}{\mathrm{I}}_{x}$ solid solutions, which are a new class of inorganic two-dimensional magnetic material, exhibit negative magnetoresistance with a value of up to $\ensuremath{-}85%$, due to the spin-dependent scattering effects of local ${\mathrm{Ti}}^{3+}$ $3{d}^{1}$ moments that are antiferromagnetically coupled. Moreover, ${\mathrm{TiTe}}_{2\ensuremath{-}x}{\mathrm{I}}_{x}$ serials show unique transport behaviors with continuous evolution from Metallic to semiconducting states. We anticipate that anionic doping will be a powerful tool for optimizing the intrinsic physical properties of two-dimensional Transition Metal chalcogenide system.
Neil Drummond - One of the best experts on this subject based on the ideXlab platform.
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structures of bulk hexagonal post Transition Metal Chalcogenides from dispersion corrected density functional theory
Physical Review B, 2021Co-Authors: Samuel Magorrian, Viktor Zolyomi, Neil DrummondAbstract:We use dispersion-corrected density functional theory to determine the relative energies of competing polytypes of bulk layered hexagonal post Transition Metal Chalcogenides to search for the most stable structures of these potentially technologically important semiconductors. We show that there is some degree of consensus among dispersion-corrected exchange-correlation functionals regarding the energetic orderings of polytypes, but we find that for each material there are multiple stacking orders with relative energies of less than 1 meV per monolayer unit cell, implying that stacking faults are expected to be abundant in all post Transition Metal Chalcogenides. By fitting a simple model to all our energy data, we predict that the most stable hexagonal structure has the $P{6}_{3}/mmc$ space group in each case but that the stacking order differs between GaS, GaSe, GaTe, and InS, on the one hand, and InSe and InTe, on the other. At zero pressure, the relative energies obtained with different functionals disagree by around 1--5 meV per monolayer unit cell, which is not sufficient to identify the most stable structure unambiguously; however, multigigapascal pressures reduce the number of competing phases significantly. At higher pressures, an ${\mathrm{AB}}^{\ensuremath{'}}$-stacked structure of the most stable monolayer polytype is found to be the most stable bulk structure.
Kiyoyuki Terakura - One of the best experts on this subject based on the ideXlab platform.
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experimental observation of pressure induced superconductivity in layered Transition Metal Chalcogenides zr hf gete4 explored by a data driven approach
Chemistry of Materials, 2021Co-Authors: Ryo Matsumoto, Zhufeng Hou, Shintaro Adachi, Sayaka Yamamoto, Hiromi Tanaka, Hiroyuki Takeya, Tetsuo Irifune, Kiyoyuki TerakuraAbstract:Layered Transition Metal Chalcogenides (Zr,Hf)GeTe4 were screened from the AtomWork database as potential pressure-induced superconductors by having a narrow bandgap and high density of states near...
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pressure induced superconductivity in layered Transition Metal Chalcogenides zr hf gete _ 4 explored by data driven approach
arXiv: Superconductivity, 2020Co-Authors: Ryo Matsumoto, Zhufeng Hou, Shintaro Adachi, Sayaka Yamamoto, Hiromi Tanaka, Hiroyuki Takeya, Tetsuo Irifune, Kiyoyuki Terakura, Yoshihiko TakanoAbstract:Layered Transition-Metal Chalcogenides (Zr,Hf)GeTe$_{4}$ were screened out from database of Atomwork as a candidate for pressure-induced superconductivity due to their narrow band gap and high density of state near the Fermi level. The (Zr,Hf)GeTe$_{4}$ samples were synthesized in single crystal and then the compositional ratio, crystal structures, and valence states were investigated via energy dispersive spectrometry, single crystal X-ray diffraction, and X-ray photoelectron spectroscopy, respectively. The pressure-induced superconductivity in both crystals were first time reported by using a diamond anvil cell with a boron-doped diamond electrode and an undoped diamond insulating layer. The maximum superconducting Transition temperatures of ZrGeTe$_{4}$ and HfGeTe$_{4}$ were 6.5 K under 57 GPa and 6.6 K under 60 GPa, respectively.
Xiao Cheng Zeng - One of the best experts on this subject based on the ideXlab platform.
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large negative magnetoresistance induced by anionic solid solutions in two dimensional spin frustrated Transition Metal Chalcogenides
Physical Review Letters, 2014Co-Authors: Yuqiao Guo, Jun Dai, Jiyin Zhao, Lidong Zhang, Wei Ning, Mingliang Tian, Xiao Cheng Zeng, Yi XieAbstract:We report an anionic solid solution process that induces frustrated magnetic structures within two-dimensional Transition Metal Chalcogenides, which leads to huge negative magnetoresistance effects. Ultrathin nanosheets of TiTe(2-x)I(x) solid solutions, which are a new class of inorganic two-dimensional magnetic material, exhibit negative magnetoresistance with a value of up to -85%, due to the spin-dependent scattering effects of local Ti(3+) 3d(1) moments that are antiferromagnetically coupled. Moreover, TiTe(2-x)I(x) serials show unique transport behaviors with continuous evolution from Metallic to semiconducting states. We anticipate that anionic doping will be a powerful tool for optimizing the intrinsic physical properties of two-dimensional Transition Metal chalcogenide system.
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large negative magnetoresistance induced by anionic solid solutions in two dimensional spin frustrated Transition Metal Chalcogenides
Physical Review Letters, 2014Co-Authors: Yuqiao Guo, Jun Dai, Jiyin Zhao, Lidong Zhang, Wei Ning, Mingliang Tian, Xiao Cheng Zeng, Yi XieAbstract:We report an anionic solid solution process that induces frustrated magnetic structures within two-dimensional Transition Metal Chalcogenides, which leads to huge negative magnetoresistance effects. Ultrathin nanosheets of ${\mathrm{TiTe}}_{2\ensuremath{-}x}{\mathrm{I}}_{x}$ solid solutions, which are a new class of inorganic two-dimensional magnetic material, exhibit negative magnetoresistance with a value of up to $\ensuremath{-}85%$, due to the spin-dependent scattering effects of local ${\mathrm{Ti}}^{3+}$ $3{d}^{1}$ moments that are antiferromagnetically coupled. Moreover, ${\mathrm{TiTe}}_{2\ensuremath{-}x}{\mathrm{I}}_{x}$ serials show unique transport behaviors with continuous evolution from Metallic to semiconducting states. We anticipate that anionic doping will be a powerful tool for optimizing the intrinsic physical properties of two-dimensional Transition Metal chalcogenide system.
Sayaka Yamamoto - One of the best experts on this subject based on the ideXlab platform.
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experimental observation of pressure induced superconductivity in layered Transition Metal Chalcogenides zr hf gete4 explored by a data driven approach
Chemistry of Materials, 2021Co-Authors: Ryo Matsumoto, Zhufeng Hou, Shintaro Adachi, Sayaka Yamamoto, Hiromi Tanaka, Hiroyuki Takeya, Tetsuo Irifune, Kiyoyuki TerakuraAbstract:Layered Transition Metal Chalcogenides (Zr,Hf)GeTe4 were screened from the AtomWork database as potential pressure-induced superconductors by having a narrow bandgap and high density of states near...
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pressure induced superconductivity in layered Transition Metal Chalcogenides zr hf gete _ 4 explored by data driven approach
arXiv: Superconductivity, 2020Co-Authors: Ryo Matsumoto, Zhufeng Hou, Shintaro Adachi, Sayaka Yamamoto, Hiromi Tanaka, Hiroyuki Takeya, Tetsuo Irifune, Kiyoyuki Terakura, Yoshihiko TakanoAbstract:Layered Transition-Metal Chalcogenides (Zr,Hf)GeTe$_{4}$ were screened out from database of Atomwork as a candidate for pressure-induced superconductivity due to their narrow band gap and high density of state near the Fermi level. The (Zr,Hf)GeTe$_{4}$ samples were synthesized in single crystal and then the compositional ratio, crystal structures, and valence states were investigated via energy dispersive spectrometry, single crystal X-ray diffraction, and X-ray photoelectron spectroscopy, respectively. The pressure-induced superconductivity in both crystals were first time reported by using a diamond anvil cell with a boron-doped diamond electrode and an undoped diamond insulating layer. The maximum superconducting Transition temperatures of ZrGeTe$_{4}$ and HfGeTe$_{4}$ were 6.5 K under 57 GPa and 6.6 K under 60 GPa, respectively.