The Experts below are selected from a list of 6 Experts worldwide ranked by ideXlab platform
V. V. Abramov - One of the best experts on this subject based on the ideXlab platform.
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Single transistor technique for interface Trap Density Measurement in irradiated MOS devices
Microelectronics Reliability, 1999Co-Authors: Viacheslav S. Pershenkov, S.v. Cherepko, R.e Ivanov, A.v. Shalnov, V. V. AbramovAbstract:The effect of interface Trap charge variation during Measurement of the MOSFET current–voltage characteristic has been examined. Taking into account this effect, an interface Trap Density extraction technique is proposed. The transconductance degradation in this technique is caused not only by channel mobility decrease, but also by Id(Vg) curve distortion due to interface Trapped charge variation during Measurement. The analytical and numerical models for the effect are developed. The experimental data on channel mobility and interface Trap Density vs total dose are shown.
Viacheslav S. Pershenkov - One of the best experts on this subject based on the ideXlab platform.
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Single transistor technique for interface Trap Density Measurement in irradiated MOS devices
Microelectronics Reliability, 1999Co-Authors: Viacheslav S. Pershenkov, S.v. Cherepko, R.e Ivanov, A.v. Shalnov, V. V. AbramovAbstract:The effect of interface Trap charge variation during Measurement of the MOSFET current–voltage characteristic has been examined. Taking into account this effect, an interface Trap Density extraction technique is proposed. The transconductance degradation in this technique is caused not only by channel mobility decrease, but also by Id(Vg) curve distortion due to interface Trapped charge variation during Measurement. The analytical and numerical models for the effect are developed. The experimental data on channel mobility and interface Trap Density vs total dose are shown.
S.v. Cherepko - One of the best experts on this subject based on the ideXlab platform.
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Single transistor technique for interface Trap Density Measurement in irradiated MOS devices
Microelectronics Reliability, 1999Co-Authors: Viacheslav S. Pershenkov, S.v. Cherepko, R.e Ivanov, A.v. Shalnov, V. V. AbramovAbstract:The effect of interface Trap charge variation during Measurement of the MOSFET current–voltage characteristic has been examined. Taking into account this effect, an interface Trap Density extraction technique is proposed. The transconductance degradation in this technique is caused not only by channel mobility decrease, but also by Id(Vg) curve distortion due to interface Trapped charge variation during Measurement. The analytical and numerical models for the effect are developed. The experimental data on channel mobility and interface Trap Density vs total dose are shown.
R.e Ivanov - One of the best experts on this subject based on the ideXlab platform.
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Single transistor technique for interface Trap Density Measurement in irradiated MOS devices
Microelectronics Reliability, 1999Co-Authors: Viacheslav S. Pershenkov, S.v. Cherepko, R.e Ivanov, A.v. Shalnov, V. V. AbramovAbstract:The effect of interface Trap charge variation during Measurement of the MOSFET current–voltage characteristic has been examined. Taking into account this effect, an interface Trap Density extraction technique is proposed. The transconductance degradation in this technique is caused not only by channel mobility decrease, but also by Id(Vg) curve distortion due to interface Trapped charge variation during Measurement. The analytical and numerical models for the effect are developed. The experimental data on channel mobility and interface Trap Density vs total dose are shown.
A.v. Shalnov - One of the best experts on this subject based on the ideXlab platform.
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Single transistor technique for interface Trap Density Measurement in irradiated MOS devices
Microelectronics Reliability, 1999Co-Authors: Viacheslav S. Pershenkov, S.v. Cherepko, R.e Ivanov, A.v. Shalnov, V. V. AbramovAbstract:The effect of interface Trap charge variation during Measurement of the MOSFET current–voltage characteristic has been examined. Taking into account this effect, an interface Trap Density extraction technique is proposed. The transconductance degradation in this technique is caused not only by channel mobility decrease, but also by Id(Vg) curve distortion due to interface Trapped charge variation during Measurement. The analytical and numerical models for the effect are developed. The experimental data on channel mobility and interface Trap Density vs total dose are shown.
