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Seogyoung Yoon – One of the best experts on this subject based on the ideXlab platform.

  • fabrication and characterization of Aluminum nitride thick film coated on Aluminum Substrate for heat dissipation
    Ceramics International, 2016
    Co-Authors: Byungdong Hahn, Jongjin Choi, Woonha Yoon, Dongsoo Park, Seogyoung Yoon
    Abstract:

    Abstract For effective heat dissipation in high-power LED applications, Aluminum nitride (AlN) thick films as thermAlly conductive dielectric layers were developed, which were deposited on an Al Substrate by aerosol deposition (AD). The aerosol-deposited AlN thick films on Al Substrates have advantages over conventionAl polymer-based dielectric Substrates or ceramic Substrate mounted heatsink systems including an epoxy adhesive, such as excellent heat dissipation capacity and low thermAl resistance. AD is an effective method to fabricate high-quAlity AlN thick film without the Al 2 O 3 phase because the film is formed at room temperature. Highly dense and well-adhered, pure AlN thick films with thicknesses up to 30 µm were deposited on an Al Substrate. AlN-Al 2 O 3 and AlN-polyvinylidene fluoride (PVDF) composite films were Also deposited on an Al Substrate in order to investigate the effect of Al 2 O 3 and polymer on the microstructure and thermAl properties. Among the films, pure AlN thick film exhibited the highest dielectric strength, the highest thermAl conductivity, and the lowest thermAl resistance. Therefore, it can be expected that the aerosol-deposited AlN thick film on Al Substrate could be used as a powerful heatsink.

  • fabrication and characterization of Aluminum nitride thick film coated on Aluminum Substrate for heat dissipation
    Ceramics International, 2016
    Co-Authors: Byungdong Hahn, Jongjin Choi, Woonha Yoon, Dongsoo Park, Yuna Kim, Cheolwoo Ahn, Jungho Ryu, Jongwoo Kim, Seogyoung Yoon
    Abstract:

    Abstract For effective heat dissipation in high-power LED applications, Aluminum nitride (AlN) thick films as thermAlly conductive dielectric layers were developed, which were deposited on an Al Substrate by aerosol deposition (AD). The aerosol-deposited AlN thick films on Al Substrates have advantages over conventionAl polymer-based dielectric Substrates or ceramic Substrate mounted heatsink systems including an epoxy adhesive, such as excellent heat dissipation capacity and low thermAl resistance. AD is an effective method to fabricate high-quAlity AlN thick film without the Al 2 O 3 phase because the film is formed at room temperature. Highly dense and well-adhered, pure AlN thick films with thicknesses up to 30 µm were deposited on an Al Substrate. AlN-Al 2 O 3 and AlN-polyvinylidene fluoride (PVDF) composite films were Also deposited on an Al Substrate in order to investigate the effect of Al 2 O 3 and polymer on the microstructure and thermAl properties. Among the films, pure AlN thick film exhibited the highest dielectric strength, the highest thermAl conductivity, and the lowest thermAl resistance. Therefore, it can be expected that the aerosol-deposited AlN thick film on Al Substrate could be used as a powerful heatsink.

Eric J Mittemeijer – One of the best experts on this subject based on the ideXlab platform.

  • heterogeneous growth of single crystAls on polycrystAls
    Physical Review B, 2017
    Co-Authors: Zumin Wang, Eric J Mittemeijer, Lars P H Jeurgens
    Abstract:

    This work discloses a surprising, previously unknown heterogeneous growth mode. Namely, large-area, thin sheets of single-crystAlline Ge were observed to grow laterAlly on top of a polycrystAlline Al Substrate, covering as many as tens of differently oriented Al grains at low temperatures. The observation of the Ge crystAlgrowth process by in situ heating transmission elecelectron microscopy demonstrates an intriguing type of “faceted” growth: the growth of single-crystAlline Ge thin sheets proceeding Al-grain by Al-grain on top of the polycrystAlline Al Substrate. The crystAlline Ge growth front tends to Align Along the lines of intersection of the Al grain boundaries with the Al surface. Such an unusuAl heterogeneous growth mode has been shown to be a consequence of the strong anisotropy of the energy of the crystAlline/crystAlline (here: c-Ge/c-Al) interfaces.

  • structure and morphology of Aluminium oxide films formed by thermAl oxidation of Aluminium
    Thin Solid Films, 2002
    Co-Authors: Lars P H Jeurgens, Eric J Mittemeijer, Willem G Sloof, F D Tichelaar
    Abstract:

    AbstractThe structure and morphology of thin Aluminium-oxide films grown by the dry, thermAl oxidation of a bare Al (431) Substrateat a partiAl oxygen pressure of 1.33 =10 Pa in the temperature range of 373–773 K were studied using X-ray photoelectron y4 spectroscopy and high resolution electron microscopy.The initiAl oxidation of the bare Al Substrate proceeds by an island-by-layer growth mechanism, involving the laterAl diffusion over the bare Al Substrate surface of mobile oxygen species.At lowtemperatures ( T (573 K ), the mobility of the oxygen species is very low, and an amorphous oxidoxide film of relatively uniform,limiting thickness develops.X-ray photoelectron spectroscopic anAlysis established the occurrence of a surface-oxide species atthe very surface of these films.At higher temperatures( T )573 K ) an initiAlly amorphous oxidoxide film of less uniform thicknessdevelops that graduAlly transforms into crystAlline g-Al O .At these temperatures an amorphous-to- 23 23 g-Al O transition oxidephase occurs. 2002 Elsevier Science B.V. All rights reserved.

  • growth kinetics and mechanisms of Aluminum oxide films formed by thermAl oxidation of Aluminum
    Journal of Applied Physics, 2002
    Co-Authors: Lars P H Jeurgens, Eric J Mittemeijer, Willem G Sloof, F D Tichelaar
    Abstract:

    The growth kinetics and mechanisms of thin Aluminum-oxide films formed by the dry, thermAl oxidation of a bare Al(431) Substrate at a partiAl oxygen pressure of 1.33×10−4 Pa in the temperature range of 373–773 K were studied using x-ray photoelectron specspectroscopy. The initiAl oxidation of the bare Al Substrate proceeds by an island-by-layer growth mechanism, involving the laterAl diffusion over the bare Al Substrate surface of mobile oxygen species. At low temperatures (T⩽573 K), an amorphous oxidoxide film develops that attains a limiting (uniform) thickness. At high temperatures (T>573 K), growth is not impeded at a limiting thickness. Kinetic anAlysis established the occurrences of two different oxide-film growth regimes: an initiAl regime of very fast oxide-film growth and a second, much slower oxidation stage that is observed only at T>573 K. These results could be discussed in terms of electric-field controlled, interstitiAl, outward transport of Al cations through a close packing of O anions in the amo…

Dongbo Wang – One of the best experts on this subject based on the ideXlab platform.

  • A facile solution synthesis of ZnO nanoplates on Al Substrate at room temperature
    Materials Letters, 2016
    Co-Authors: Shiyong Gao, Shujie Jiao, Jinzhong Wang, Yong Zhang, Dongbo Wang
    Abstract:

    Abstract Large scAle and high density ZnO nanoplates have been successfully fabricated on Al Substrate via a simple hydrothermAl method at room temperature. The characterizations indicate the as-prepared ZnO nanoplates grown on the whole Al Substrate with diameter of ∼4.8 µm and thickness of ∼150 nm. A possible growth mechanism was proposed. The photocatAlysis test shows that ZnO nanoplates exhibit high efficient photocatAlytic degradation of organic molecules. Moreover, the photocatAlytic circulation experiments demonstrate the high stability of ZnO nanoplates.

Xuzhao Zhang – One of the best experts on this subject based on the ideXlab platform.

Byungdong Hahn – One of the best experts on this subject based on the ideXlab platform.

  • fabrication and characterization of Aluminum nitride thick film coated on Aluminum Substrate for heat dissipation
    Ceramics International, 2016
    Co-Authors: Byungdong Hahn, Jongjin Choi, Woonha Yoon, Dongsoo Park, Seogyoung Yoon
    Abstract:

    Abstract For effective heat dissipation in high-power LED applications, Aluminum nitride (AlN) thick films as thermAlly conductive dielectric layers were developed, which were deposited on an Al Substrate by aerosol deposition (AD). The aerosol-deposited AlN thick films on Al Substrates have advantages over conventionAl polymer-based dielectric Substrates or ceramic Substrate mounted heatsink systems including an epoxy adhesive, such as excellent heat dissipation capacity and low thermAl resistance. AD is an effective method to fabricate high-quAlity AlN thick film without the Al 2 O 3 phase because the film is formed at room temperature. Highly dense and well-adhered, pure AlN thick films with thicknesses up to 30 µm were deposited on an Al Substrate. AlN-Al 2 O 3 and AlN-polyvinylidene fluoride (PVDF) composite films were Also deposited on an Al Substrate in order to investigate the effect of Al 2 O 3 and polymer on the microstructure and thermAl properties. Among the films, pure AlN thick film exhibited the highest dielectric strength, the highest thermAl conductivity, and the lowest thermAl resistance. Therefore, it can be expected that the aerosol-deposited AlN thick film on Al Substrate could be used as a powerful heatsink.

  • fabrication and characterization of Aluminum nitride thick film coated on Aluminum Substrate for heat dissipation
    Ceramics International, 2016
    Co-Authors: Byungdong Hahn, Jongjin Choi, Woonha Yoon, Dongsoo Park, Yuna Kim, Cheolwoo Ahn, Jungho Ryu, Jongwoo Kim, Seogyoung Yoon
    Abstract:

    Abstract For effective heat dissipation in high-power LED applications, Aluminum nitride (AlN) thick films as thermAlly conductive dielectric layers were developed, which were deposited on an Al Substrate by aerosol deposition (AD). The aerosol-deposited AlN thick films on Al Substrates have advantages over conventionAl polymer-based dielectric Substrates or ceramic Substrate mounted heatsink systems including an epoxy adhesive, such as excellent heat dissipation capacity and low thermAl resistance. AD is an effective method to fabricate high-quAlity AlN thick film without the Al 2 O 3 phase because the film is formed at room temperature. Highly dense and well-adhered, pure AlN thick films with thicknesses up to 30 µm were deposited on an Al Substrate. AlN-Al 2 O 3 and AlN-polyvinylidene fluoride (PVDF) composite films were Also deposited on an Al Substrate in order to investigate the effect of Al 2 O 3 and polymer on the microstructure and thermAl properties. Among the films, pure AlN thick film exhibited the highest dielectric strength, the highest thermAl conductivity, and the lowest thermAl resistance. Therefore, it can be expected that the aerosol-deposited AlN thick film on Al Substrate could be used as a powerful heatsink.