The Experts below are selected from a list of 1338 Experts worldwide ranked by ideXlab platform
Jea-gun Park - One of the best experts on this subject based on the ideXlab platform.
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effect of nh4oh concentration on surface qualities of a silicon wafer after final touch polishing
Journal of The Electrochemical Society, 2011Co-Authors: Hee Sub Hwang, Jin-hyung Park, Eunsuck Choi, Jinwoo Ahn, Jea-gun ParkAbstract:The effect of NH 4 OH concentration on surface qualities, namely, haze level, roughness, and number of remaining particles after final-touch polishing, of silicon wafers was investigated. This investigation found that the surface qualities of the final touch polished silicon wafers were degraded by the agglomeration of colloidal silica abrasives and a weakly formed passivation layer on the silicon-wafer surface at lower NH 4 OH concentration and enhanced with increasing NH 4 OH concentration in Alkaline Slurry. These results were confirmed by measuring the secondary-abrasive size, zeta potential of the colloidal silica abrasive in the Slurry, and X-ray photoelectron spectroscopy on the silicon-wafer surface.
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Potassium Permanganate as Oxidizer in Alkaline Slurry for Chemical Mechanical Planarization of Nitrogen-doped Polycrystalline Ge2Sb2Te5 Film
Journal of The Electrochemical Society, 2010Co-Authors: Hao Cui, Jong Young Cho, Hee Sub Hwang, Jae Hyung Lim, Jin-hyung Park, Hyung Soon Park, Kwon Hong, Jea-gun ParkAbstract:For phase-change memory beyond the 30 nm design rule, chemical mechanical planarization (CMP) performing at a high polishing rate, reasonable selectivity, and no corrosion-induced pits is essential for planarizing nitrogen-doped polycrystalline Ge 2 Sb 2 Te 5 (GST) deposited on the confined memory cell structure. We develop a new Alkaline Slurry added with KMnO 4 used as an oxidizer. The Alkaline Slurry added with 0.3 wt % KMn0 4 has a polycrystalline GST film polishing rate of 5200 A/min, a polishing rate selectivity between polycrystalline GST and SiO 2 film of 100:1, and no corrosion-induced pit. In addition, polycrystalline GST film CMP using the Alkaline Slurry added with KMn0 4 is observed to follow a cyclic reaction polishing mechanism.
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Role of Hydrogen Peroxide in Alkaline Slurry on the Polishing Rate of Polycrystalline Ge2Sb2Te5 Film in Chemical Mechanical Polishing
Electrochemical and Solid-State Letters, 2010Co-Authors: Jong Young Cho, Hao Cui, Jin-hyung Park, Jea-gun ParkAbstract:In chemical mechanical polishing (CMP), the polishing rate of Ge 2 Sb 2 Te 5 (GST) films increases sharply with H 2 O 2 concentration up to 0.2 wt % and then increases slightly with a further increase in H 2 O 2 concentration up to 3.0 wt %. However, the polishing rate of SiO 2 films increases very slightly with H 2 O 2 concentration up to 3 wt %. Polishing selectivity of GST films to SiO 2 films of over 100:1 can therefore be achieved by adding H 2 O 2 to the Slurry. To understand the mechanism of GST CMP with H 2 O 2 , we investigated the chemical reaction behavior on the GST film surface using potentiodynamic measurement and X-ray photoelectron spectroscopy.
Yuling Liu - One of the best experts on this subject based on the ideXlab platform.
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effect of 1 2 4 triazole on galvanic corrosion between cobalt and copper in cmp based Alkaline Slurry
Journal of Semiconductors, 2018Co-Authors: Lei Fu, Yuling Liu, Chenwei Wang, Linan HanAbstract:Cobalt has become a new type of barrier material with its unique advantages since the copper-interconnects in the great-large scale integrated circuits (GLSI) into 10 nm and below technical nodes, but cobalt and copper have severe galvanic corrosion during chemical–mechanical flattening. The effect of 1,2,4-triazole on Co/Cu galvanic corrosion in Alkaline Slurry and the control of rate selectivity of copper and cobalt were investigated in this work. The results of electrochemical experiments and polishing experiments had indicated that a certain concentration of 1,2,4-triazole could form a layer of insoluble and dense passive film on the surface of cobalt and copper, which reduced the corrosion potential difference between cobalt and copper. Meantime, the removal rate of cobalt and copper could be effectively controlled according to demand during the CMP process. When the study optimized Slurry was composed of 0.5 wt% colloidal silica, 0.1 %vol. hydrogen peroxide, 0.05 wt% FA/O, 345 ppm 1,2,4-triazole, cobalt had higher corrosion potential than copper and the galvanic corrosion could be reduced effectively when the corrosion potential difference between them decreased to 1 mV and the galvanic corrosion current density reached 0.02 nA/cm 2 . Meanwhile, the removal rate of Co was 62.396 nm/min, the removal rate of Cu was 47.328 nm/min, so that the removal rate ratio of cobalt and copper was 1.32 : 1, which was a good amendment to the dishing pits. The contact potential corrosion of Co/Cu was very weak, which could be better for meeting the requirements of the barrier CMP.
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the stability of a novel weakly Alkaline Slurry of copper interconnection cmpfor glsi
Journal of Semiconductors, 2018Co-Authors: Caihong Yao, Chenwei Wang, Xinhuan Niu, Yan Wang, Shengjun Tian, Zichao Jiang, Yuling LiuAbstract:Chemical mechanical polishing (CMP) is one of the important machining procedures of multilayered copper interconnection for GLSI, meanwhile polishing Slurry is a critical factor for realizing the high polishing performance such as high planarization efficiency, low surface roughness. The effect of Slurry components such as abrasive (colloidal silica), complexing agent (glycine), inhibitor (BTA) and oxidizing agent (H 2 O 2 ) on the stability of the novel weakly Alkaline Slurry of copper interconnection CMP for GLSI was investigated in this paper. First, the synergistic and competitive relationship of them in a peroxide-based weakly Alkaline Slurry during the copper CMP process was studied and the stability mechanism was put forward. Then 1 wt% colloidal silica, 2.5 wt% glycine, 200 ppm BTA, 20 mL/L H 2 O 2 had been selected as the appropriate concentration to prepare copper Slurry, and using such Slurry the copper blanket wafer was polished. From the variations of copper removal rate, root-mean square roughness (Sq) value with the setting time, it indicates that the working-life of the novel weakly Alkaline Slurry can reach more than 7 days, which satisfies the requirement of microelectronics further development.
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research on si 100 crystal substrate cmp based on fa o Alkaline Slurry
Applied Surface Science, 2017Co-Authors: Jiao Hong, Chenwei Wang, Xinhuan Niu, Juan Wang, Baoguo Zhang, Ru Wang, Ming Sun, Yuling LiuAbstract:Abstract For the advanced IC technology nodes, the surface quality of the polished silicon substrate surface becomes more and more critical. Haze is used to characterize extremely small pits scatter light disproportionately at the angle of measurement (90°), and Haze collected on full wafer scale with high throughput is the key CMP output parameter in an advanced CMP process. In this study, the influence of surface defects especially scratch, particle contamination, and surface roughness on Haze was investigated. The results indicate scratch and particle contamination take some influence on Haze, and Haze increases quickly with the increasing of surface roughness. So it can be concluded that surface roughness is the key affecting factor of Haze. In addition, the influence of FA/O surfactant in the Alkaline Slurry on Haze was studied. The results show FA/O surfactant can effectively decrease Haze. Finally, the advantages of the FA/O Alkaline Slurry were exhibited by the contrast experiments. A much lower level of metallic ions residual and a much better WIWNU were gotten for silicon wafers polished by FA/O Alkaline Slurry than that by the commercial one. Hence, the FA/O Alkaline Slurry provides a high quality silicon wafer surface. The results are helpful for researching the silicon CMP as well as the other materials.
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a study on exploring the Alkaline copper cmp Slurry without inhibitors to achieve high planarization efficiency
Microelectronic Engineering, 2016Co-Authors: Xiaodong Luan, Yuling Liu, Chenwei Wang, Xinhuan Niu, Juan Wang, Wenqian ZhangAbstract:Benzotriazole (BTA), a widely used inhibitor, is added to the Slurry to eliminate step height. However, it is carcinogenic compound and presents challenges in post CMP cleaning. In this paper, we have solved this problem by using a unique Alkaline macromolecular organic chelating agent with the high activation energy (named FA/O) to complex cupric ion. A model is proposed to illuminate why the Slurry is free of inhibitors and predict that a high removal rate difference between the convex and concave areas can help eliminate step height. Dissolution rate results indicate that there is almost no reaction between FA/O chelating agent and copper ions in the static Alkaline conditions, and films, including Cu2O, CuO and Cu(OH)2 formed in the Alkaline solution, hardly dissolve protecting the copper from reacting in the recessed regions. On the contrary, the FA/O-based Slurry without BTA gives a very high copper polish rate compared to the static dissolution rate, and it yields a considerably higher planarization efficiency (PE) of 88.4% than that (27.5%) of the glycine-based Slurry without BTA, which achieves the equal performance with the addition of BTA to the glycine-based Slurry (90.4%). Here the different reaction mechanism between the glycine based acidic Slurry and FA/O chelating agent based Alkaline Slurry has been discussed. Display Omitted The weakly Alkaline copper Slurry is free of inhibitors.FA/O chelating agent has the high activation energy to chelate copper ions.The activation energy at convex position for the chemical reaction rate is lower than that of concave position during CMP.The weakly Alkaline copper Slurry without inhibitors can achieve high planarization efficiency (88.4%).
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chemical mechanical planarization of barrier layers by using a weakly Alkaline Slurry
Microelectronic Engineering, 2013Co-Authors: Chenwei Wang, Xinhuan Niu, Jianying Tian, Jiaojiao Gao, Yuling LiuAbstract:We have proposed a novel weakly Alkaline barrier Slurry without inhibitors and unstable H2O2 for barrier CMP.The Slurry has an effectively effect on the correction of dishing and erosion.The Slurry provides a lower copper loss.The Slurry has been applied in barrier CMP. A weakly Alkaline barrier Slurry (pH=8.0) was proposed, which was free of unstable H2O2 and inhibitor such as benzotriazole (BTA). The polishing results of Cu, Ta and oxide blanket wafers show that the Slurry has a high removal rate on oxide, while Ta has a low removal rate on Cu. The evaluation of the Slurry was implemented in a way that the process conditions of Cu CMP and consumables on platen 1 and platen 2 were fixed. Copper dishing and oxide erosion have been characterized as a function of polishing time. The experiment results reveal that the barrier Slurry without inhibitors has an obvious effect on the correction of dishing and erosion, and it also suggests that the Slurry has a high selectivity of Ta and oxide to Cu. The sheet resistance does not exhibit any difference as polishing time increased, which indicates substantially lower copper loss.
W D Munz - One of the best experts on this subject based on the ideXlab platform.
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wear associated with growth defects in combined cathodic arc unbalanced magnetron sputtered crn nbn superlattice coatings during erosion in Alkaline Slurry
Surface & Coatings Technology, 2000Co-Authors: H W Wang, Margaret Stack, S B Lyon, P E Hovsepian, W D MunzAbstract:The erosive wear associated with growth defects was studied in deaerated 0.5 M (Na2CO3-NaHCO3) buffer solutions containing 150-200 mum alumina particles on a rotating cylinder erosion-corrosion system for PVD CrN/NbN superlattice coatings grown by the are bond sputtering (ABS) process on mild steel BS6323. Corrosion was minimised by selective control of the sample's potential, according to potentiodynamic polarisation, during the Slurry erosive wear test. The morphology of the coatings, particularly of the defects, was examined in planar and cross-section views by means of scanning electron microscopy before and after the test. It is found that wear of the coating is typically preferential to the defects, progressing from the particle exterior top to the interior with erosion time, while the coating matrix (areas free of such defects) is largely intact, after 24 h prolonged exposure to erosion. (C) 2000 Elsevier Science B.V. All rights reserved.
Chenwei Wang - One of the best experts on this subject based on the ideXlab platform.
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role of 1 h carboxyl benzotriazole as corrosion inhibitor for cobalt bulk step cmp in h2o2 based Alkaline Slurry
China Semiconductor Technology International Conference, 2021Co-Authors: Shuangshuang Lei, Chenwei Wang, Sheng-li WangAbstract:Cobalt has been considered as new interconnect metal. In this work, the passivation effect of 1-H Carboxyl Benzotriazole (CBT) on cobalt corrosion during “bulk step” chemical mechanical polishing (CMP) in H 2 O 2 based Alkaline Slurry was investigated. The result showed that CBT can effectively inhibit the corrosion of cobalt and improve the surface quality after CMP by forming a passivation film on the cobalt surface. Characterization and analysis were given by potential polarization curves, X-ray photoelectron spectroscopy (XPS) and SEM measurements. Meanwhile, the passivation effect of CBT on cobalt was also verified from the mechanical aspect such as working pressure and carrier/platen speeds.
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Potassium Tartrate as a Complexing Agent for Cobalt “Buff Step” CMP in Alkaline Slurry
2019 China Semiconductor Technology International Conference (CSTIC), 2019Co-Authors: Tingwei Liang, Sheng-li Wang, Chenwei Wang, Fengxia LiuAbstract:This paper investigates the dynamic corrosion potential differences of cobalt and titanium at different pH values and hydrogen peroxide concentrations. The effects of oxidants like hydrogen peroxide, complexing agents like Potassium tartrate (PTH) on the polishing rate of cobalt and titanium were studied. The lower galvanic corrosion potential differences were obtained, and the better polishing removal ratio was achieved.
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Effect of Chelation and Oxidation on Reducing Galvanic Corrosion between Cobalt and Copper in Alkaline Slurry
2019 China Semiconductor Technology International Conference (CSTIC), 2019Co-Authors: Chao Huang, Guofeng Pan, Jiacheng Qi, Chenwei WangAbstract:The synergistic reaction of chelating agent and hydrogen peroxide on Co/Cu galvanic corrosion in weak Alkaline Slurry were investigated in this work. The experimental results show that the oxide and hydroxide passivation films on the surface of cobalt and cooper can suppress the corrosion caused by oxidation by increasing the concentration of hydrogen peroxide. While the passive film on copper surface dissolved when the chelating agent was added and cobalt had higher erosion potential than copper and the galvanic corrosion could be disposed effectively when the difference of open circuit potential of the decrease to 20mV.
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effect of 1 2 4 triazole on galvanic corrosion between cobalt and copper in cmp based Alkaline Slurry
Journal of Semiconductors, 2018Co-Authors: Lei Fu, Yuling Liu, Chenwei Wang, Linan HanAbstract:Cobalt has become a new type of barrier material with its unique advantages since the copper-interconnects in the great-large scale integrated circuits (GLSI) into 10 nm and below technical nodes, but cobalt and copper have severe galvanic corrosion during chemical–mechanical flattening. The effect of 1,2,4-triazole on Co/Cu galvanic corrosion in Alkaline Slurry and the control of rate selectivity of copper and cobalt were investigated in this work. The results of electrochemical experiments and polishing experiments had indicated that a certain concentration of 1,2,4-triazole could form a layer of insoluble and dense passive film on the surface of cobalt and copper, which reduced the corrosion potential difference between cobalt and copper. Meantime, the removal rate of cobalt and copper could be effectively controlled according to demand during the CMP process. When the study optimized Slurry was composed of 0.5 wt% colloidal silica, 0.1 %vol. hydrogen peroxide, 0.05 wt% FA/O, 345 ppm 1,2,4-triazole, cobalt had higher corrosion potential than copper and the galvanic corrosion could be reduced effectively when the corrosion potential difference between them decreased to 1 mV and the galvanic corrosion current density reached 0.02 nA/cm 2 . Meanwhile, the removal rate of Co was 62.396 nm/min, the removal rate of Cu was 47.328 nm/min, so that the removal rate ratio of cobalt and copper was 1.32 : 1, which was a good amendment to the dishing pits. The contact potential corrosion of Co/Cu was very weak, which could be better for meeting the requirements of the barrier CMP.
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the stability of a novel weakly Alkaline Slurry of copper interconnection cmpfor glsi
Journal of Semiconductors, 2018Co-Authors: Caihong Yao, Chenwei Wang, Xinhuan Niu, Yan Wang, Shengjun Tian, Zichao Jiang, Yuling LiuAbstract:Chemical mechanical polishing (CMP) is one of the important machining procedures of multilayered copper interconnection for GLSI, meanwhile polishing Slurry is a critical factor for realizing the high polishing performance such as high planarization efficiency, low surface roughness. The effect of Slurry components such as abrasive (colloidal silica), complexing agent (glycine), inhibitor (BTA) and oxidizing agent (H 2 O 2 ) on the stability of the novel weakly Alkaline Slurry of copper interconnection CMP for GLSI was investigated in this paper. First, the synergistic and competitive relationship of them in a peroxide-based weakly Alkaline Slurry during the copper CMP process was studied and the stability mechanism was put forward. Then 1 wt% colloidal silica, 2.5 wt% glycine, 200 ppm BTA, 20 mL/L H 2 O 2 had been selected as the appropriate concentration to prepare copper Slurry, and using such Slurry the copper blanket wafer was polished. From the variations of copper removal rate, root-mean square roughness (Sq) value with the setting time, it indicates that the working-life of the novel weakly Alkaline Slurry can reach more than 7 days, which satisfies the requirement of microelectronics further development.
H W Wang - One of the best experts on this subject based on the ideXlab platform.
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wear associated with growth defects in combined cathodic arc unbalanced magnetron sputtered crn nbn superlattice coatings during erosion in Alkaline Slurry
Surface & Coatings Technology, 2000Co-Authors: H W Wang, Margaret Stack, S B Lyon, P E Hovsepian, W D MunzAbstract:The erosive wear associated with growth defects was studied in deaerated 0.5 M (Na2CO3-NaHCO3) buffer solutions containing 150-200 mum alumina particles on a rotating cylinder erosion-corrosion system for PVD CrN/NbN superlattice coatings grown by the are bond sputtering (ABS) process on mild steel BS6323. Corrosion was minimised by selective control of the sample's potential, according to potentiodynamic polarisation, during the Slurry erosive wear test. The morphology of the coatings, particularly of the defects, was examined in planar and cross-section views by means of scanning electron microscopy before and after the test. It is found that wear of the coating is typically preferential to the defects, progressing from the particle exterior top to the interior with erosion time, while the coating matrix (areas free of such defects) is largely intact, after 24 h prolonged exposure to erosion. (C) 2000 Elsevier Science B.V. All rights reserved.