The Experts below are selected from a list of 321 Experts worldwide ranked by ideXlab platform
Baolian Su - One of the best experts on this subject based on the ideXlab platform.
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hierarchically structured meso macroporous aluminosilicates with high tetrahedral Aluminium Content in acid catalysed esterification of fatty acids
Journal of Colloid and Interface Science, 2011Co-Authors: Arnaud Lemaire, Quanyi Wang, Baolian SuAbstract:Hierarchically structured meso-macroporous aluminosilicates with high tetrahedral Aluminium Content in acid catalysed esterification of fatty acids
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highly spongy hierarchical structured meso macroporous aluminosilicates with high tetrahedral Aluminium Content and 3d interconnectivity from a single source molecular precursor sec buo 2 al o si oet 3 effect of silicon co reactant
Microporous and Mesoporous Materials, 2011Co-Authors: Arnaud Lemaire, Baolian SuAbstract:Abstract The effect of tetraethoxysilane (TEOS), tetrapropoxysilane (TPOS), tetrabutoxysilane (TBOS) and a mixture of tetramethoxysilane (TMOS) and TEOS as silicon co-reactant on the formation of hierarchically structured meso-macroporous aluminosilicates and the tetrahedral Aluminium Content in the framework using a single molecular alkoxide precursor, (sec-BuO)2–Al–O–Si(OEt)3, has been intensively investigated. The use of alkoxysilane as a co-reactant and highly alkaline media improves the heterocondensation rates between the highly reactive Aluminium-alkoxide part of the single molecular precursor and the added alkoxysilanes, and minimizes the cleavage of the intrinsic Al–O–Si linkage. The very unique hierarchical meso-macroporosity was auto-generated by the hydrodynamic flow of solvents released during the rapid hydrolysis and condensation processes of this double alkoxide and the inorganic silica co-reactant. No external structural agent was required to template these porous structures. The particles obtained featured outstanding macrostructure with regular micrometer-sized macrovoids and displaying 3D interconnections. Importantly, the diameter of the micrometer-sized macrovoids found in the final materials and the thickness of the mesoporous walls separating these voids can be tuned by adjusting the reactivity of alkoxysilanes used as co-reactant. Higher reactivity of alkoxysilanes can improve the tetrahedral Aluminium Content in the meso-macroporous framework and reduce the cleavage of Al–O–Si linkage of the single molecular precursor. These correlations are of primary importance for targeting advanced materials with well defined meso- and macroporosities and tetrahedral Aluminium Content.
Quanyi Wang - One of the best experts on this subject based on the ideXlab platform.
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hierarchically structured meso macroporous aluminosilicates with high tetrahedral Aluminium Content in acid catalysed esterification of fatty acids
Journal of Colloid and Interface Science, 2011Co-Authors: Arnaud Lemaire, Quanyi Wang, Baolian SuAbstract:Hierarchically structured meso-macroporous aluminosilicates with high tetrahedral Aluminium Content in acid catalysed esterification of fatty acids
Arnaud Lemaire - One of the best experts on this subject based on the ideXlab platform.
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hierarchically structured meso macroporous aluminosilicates with high tetrahedral Aluminium Content in acid catalysed esterification of fatty acids
Journal of Colloid and Interface Science, 2011Co-Authors: Arnaud Lemaire, Quanyi Wang, Baolian SuAbstract:Hierarchically structured meso-macroporous aluminosilicates with high tetrahedral Aluminium Content in acid catalysed esterification of fatty acids
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highly spongy hierarchical structured meso macroporous aluminosilicates with high tetrahedral Aluminium Content and 3d interconnectivity from a single source molecular precursor sec buo 2 al o si oet 3 effect of silicon co reactant
Microporous and Mesoporous Materials, 2011Co-Authors: Arnaud Lemaire, Baolian SuAbstract:Abstract The effect of tetraethoxysilane (TEOS), tetrapropoxysilane (TPOS), tetrabutoxysilane (TBOS) and a mixture of tetramethoxysilane (TMOS) and TEOS as silicon co-reactant on the formation of hierarchically structured meso-macroporous aluminosilicates and the tetrahedral Aluminium Content in the framework using a single molecular alkoxide precursor, (sec-BuO)2–Al–O–Si(OEt)3, has been intensively investigated. The use of alkoxysilane as a co-reactant and highly alkaline media improves the heterocondensation rates between the highly reactive Aluminium-alkoxide part of the single molecular precursor and the added alkoxysilanes, and minimizes the cleavage of the intrinsic Al–O–Si linkage. The very unique hierarchical meso-macroporosity was auto-generated by the hydrodynamic flow of solvents released during the rapid hydrolysis and condensation processes of this double alkoxide and the inorganic silica co-reactant. No external structural agent was required to template these porous structures. The particles obtained featured outstanding macrostructure with regular micrometer-sized macrovoids and displaying 3D interconnections. Importantly, the diameter of the micrometer-sized macrovoids found in the final materials and the thickness of the mesoporous walls separating these voids can be tuned by adjusting the reactivity of alkoxysilanes used as co-reactant. Higher reactivity of alkoxysilanes can improve the tetrahedral Aluminium Content in the meso-macroporous framework and reduce the cleavage of Al–O–Si linkage of the single molecular precursor. These correlations are of primary importance for targeting advanced materials with well defined meso- and macroporosities and tetrahedral Aluminium Content.
Sergio Guerreiro - One of the best experts on this subject based on the ideXlab platform.
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Deposition of arc TiAlN coatings with pulsed bias
Surface & Coatings Technology, 1995Co-Authors: Erich Lugscheider, O. Knotek, Cyrus Barimani, Sergio Guerreiro, Friedrich Loffler, H. ZimmermannAbstract:Abstract It is a well-known fact that the Aluminium Content of TiAlN coatings deposited with the arc physical vapour deposition (PVD) process depends mainly on substrate potential and source-to-substrate distance. To achieve good results in cutting operations with TiAlN-coated tools with a low Aluminium Content in the film, it is necessary to deposit TiAlN with a relatively high bias voltage which raises the substrate temperature to a level which can cause some damage to the structure of even high speed steel substrates. For high performance cutting operations with TiAlN thin films a high and homogeneous Aluminium Content in the films, especially on cutting edges, is necessary. Higher Aluminium Content in arc PVD thin films is achieved with lower bias voltage during deposition which in turn lowers the deposition temperature and consequently enables heat-sensitive substrates to be coated; however, for good adhesion of the deposited films a high bias voltage is required. The application of a pulse bias generator instead of a d.c. bias offers the possibility to decrease the deposition temperature and to obtain more Aluminium in the coating. In this paper we compare coating properties of TiAlN deposited with d.c. and pulsed bias source. With pulsed bias it is possible to achieve higher Aluminium Content in the coating, especially on cutting edges. Analysis of increase in Aluminium on cutting edges was carried out by energy-dispersive X-ray analysis.
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Deposition of arc TiAlN coatings with pulsed bias
Surface and Coatings Technology, 1995Co-Authors: Erich Lugscheider, O. Knotek, Cyrus Barimani, Friedrich Loffler, Sergio GuerreiroAbstract:It is a well-known fact that the Aluminium Content of TiAlN coatings deposited with the arc physical vapour deposition (PVD) process depends mainly on substrate potential and source-to-substrate distance. To achieve good results in cutting operations with TiAlN-coated tools with a low Aluminium Content in the film, it is necessary to deposit TiAlN with a relatively high bias voltage which raises the substrate temperature to a level which can cause some damage to the structure of even high speed steel substrates. For high performance cutting operations with TiAlN thin films a high and homogeneous Aluminium Content in the films, especially on cutting edges, is necessary. Higher Aluminium Content in arc PVD thin films is achieved with lower bias voltage during deposition which in turn lowers the deposition temperature and consequently enables heat-sensitive substrates to be coated; however, for good adhesion of the deposited films a high bias voltage is required. The application of a pulse bias generator instead of a d.c. bias offers the possibility to decrease the deposition temperature and to obtain more Aluminium in the coating. In this paper we compare coating properties of TiAlN deposited with d.c. and pulsed bias source. With pulsed bias it is possible to achieve higher Aluminium Content in the coating, especially on cutting edges. Analysis of increase in Aluminium on cutting edges was carried out by energy-dispersive X-ray analysis. © 1995 Elsevier Science S.A. All rights reserved.
Erich Lugscheider - One of the best experts on this subject based on the ideXlab platform.
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(Cr:Al)N coatings deposited by the cathodic vacuum are evaporation
Surface & Coatings Technology, 1998Co-Authors: Jörg Vetter, Erich Lugscheider, S. GuerreiroAbstract:(Cr:Al)N coatings were deposited using two cathodic vacuum arc evaporators fitted with chromium and Aluminium cathodes. Both monolayer and multilayer coatings were deposited with different Aluminium Content. Selected mechanical and tribological properties of the coating were investigated as well as the oxidation behaviour. It is shown that the oxidation rate decreases with increasing Aluminium Content. The hardness of the (Cr:Al)N coating is higher than that of CrN coatings.
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Deposition of arc TiAlN coatings with pulsed bias
Surface & Coatings Technology, 1995Co-Authors: Erich Lugscheider, O. Knotek, Cyrus Barimani, Sergio Guerreiro, Friedrich Loffler, H. ZimmermannAbstract:Abstract It is a well-known fact that the Aluminium Content of TiAlN coatings deposited with the arc physical vapour deposition (PVD) process depends mainly on substrate potential and source-to-substrate distance. To achieve good results in cutting operations with TiAlN-coated tools with a low Aluminium Content in the film, it is necessary to deposit TiAlN with a relatively high bias voltage which raises the substrate temperature to a level which can cause some damage to the structure of even high speed steel substrates. For high performance cutting operations with TiAlN thin films a high and homogeneous Aluminium Content in the films, especially on cutting edges, is necessary. Higher Aluminium Content in arc PVD thin films is achieved with lower bias voltage during deposition which in turn lowers the deposition temperature and consequently enables heat-sensitive substrates to be coated; however, for good adhesion of the deposited films a high bias voltage is required. The application of a pulse bias generator instead of a d.c. bias offers the possibility to decrease the deposition temperature and to obtain more Aluminium in the coating. In this paper we compare coating properties of TiAlN deposited with d.c. and pulsed bias source. With pulsed bias it is possible to achieve higher Aluminium Content in the coating, especially on cutting edges. Analysis of increase in Aluminium on cutting edges was carried out by energy-dispersive X-ray analysis.
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Deposition of arc TiAlN coatings with pulsed bias
Surface and Coatings Technology, 1995Co-Authors: Erich Lugscheider, O. Knotek, Cyrus Barimani, Friedrich Loffler, Sergio GuerreiroAbstract:It is a well-known fact that the Aluminium Content of TiAlN coatings deposited with the arc physical vapour deposition (PVD) process depends mainly on substrate potential and source-to-substrate distance. To achieve good results in cutting operations with TiAlN-coated tools with a low Aluminium Content in the film, it is necessary to deposit TiAlN with a relatively high bias voltage which raises the substrate temperature to a level which can cause some damage to the structure of even high speed steel substrates. For high performance cutting operations with TiAlN thin films a high and homogeneous Aluminium Content in the films, especially on cutting edges, is necessary. Higher Aluminium Content in arc PVD thin films is achieved with lower bias voltage during deposition which in turn lowers the deposition temperature and consequently enables heat-sensitive substrates to be coated; however, for good adhesion of the deposited films a high bias voltage is required. The application of a pulse bias generator instead of a d.c. bias offers the possibility to decrease the deposition temperature and to obtain more Aluminium in the coating. In this paper we compare coating properties of TiAlN deposited with d.c. and pulsed bias source. With pulsed bias it is possible to achieve higher Aluminium Content in the coating, especially on cutting edges. Analysis of increase in Aluminium on cutting edges was carried out by energy-dispersive X-ray analysis. © 1995 Elsevier Science S.A. All rights reserved.
