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Aluminum Oxide

The Experts below are selected from a list of 273 Experts worldwide ranked by ideXlab platform

Andres Cuevas – 1st expert on this subject based on the ideXlab platform

  • effective surface passivation of crystalline silicon by rf sputtered Aluminum Oxide
    Physica Status Solidi-rapid Research Letters, 2009
    Co-Authors: Tsutsung Li, Andres Cuevas

    Abstract:

    In recent years, excellent surface passivation has been achieved on both p-type and n-type surfaces of silicon wafers and solar cells using Aluminum Oxide deposited by plasma-assisted atomic layer deposition. However, alternative deposition methods may offer practical advantages for large-scale manufacturing of solar cells. In this letter we show that radio-frequency magnetron sputtering is capable of depositing negatively-charged Aluminum Oxide and achieving good surface passivation both on p-type and n-type silicon wafers. We thus establish that sputtered Aluminum Oxide is a very promising method for the surface passivation of high efficiency solar cells. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Tsutsung Li – 2nd expert on this subject based on the ideXlab platform

  • effective surface passivation of crystalline silicon by rf sputtered Aluminum Oxide
    Physica Status Solidi-rapid Research Letters, 2009
    Co-Authors: Tsutsung Li, Andres Cuevas

    Abstract:

    In recent years, excellent surface passivation has been achieved on both p-type and n-type surfaces of silicon wafers and solar cells using Aluminum Oxide deposited by plasma-assisted atomic layer deposition. However, alternative deposition methods may offer practical advantages for large-scale manufacturing of solar cells. In this letter we show that radio-frequency magnetron sputtering is capable of depositing negatively-charged Aluminum Oxide and achieving good surface passivation both on p-type and n-type silicon wafers. We thus establish that sputtered Aluminum Oxide is a very promising method for the surface passivation of high efficiency solar cells. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Xie Xing-hua – 3rd expert on this subject based on the ideXlab platform

  • Ultrafine Aluminum Oxide production by detonation
    Explosion and Shock Waves, 2005
    Co-Authors: Xie Xing-hua

    Abstract:

    The experimental study of ultrafine Aluminum Oxide formed by the mixture detonation of Aluminum nitrate and PETN used to maintain steady detonation is presented. The detonation product without any disposal is analysed by TEM、XRD、DTA/TGA and BET. The results show that the detonation product is ultrafine and globose Aluminum Oxide, the range of granularity is from 10~50 nm, the average size is 25 nm. The Aluminum Oxide is γ Aluminum Oxide. Based on the experimental results, we concluded that the ultrafine Aluminum Oxide directly agglomerated each other with the ion or molecule formed in the reaction area of detonation. Because the process of agglomeration and growth completed in the microsecond range, the grains did not grow towards the favored direction and took spherial form.

  • Experiment study of nanometer Aluminum Oxide
    Journal of Yunnan University, 2005
    Co-Authors: Xie Xing-hua

    Abstract:

    Experiments were carried out to study the synthesis of nanometer γ Aluminum Oxide by the mixture detonation of nine water Aluminum nitrate and RDX with a given quality ratio.The detonation product was analysed by XRD,TEM,SEM,and DTA/TG respectively.The results prove that the detonation product is nanometer and spherical Aluminum Oxide,and the average is 25?nm.The product is γ-Aluminum Oxide.