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Analog Frequency

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Sushmee Badhulika – One of the best experts on this subject based on the ideXlab platform.

  • fabrication of a solution processed highly flexible few layer mos2 n cuo p piezotronic diode on a paper substrate for an active Analog Frequency modulator and enhanced broadband photodetector
    Journal of Materials Chemistry C, 2017
    Co-Authors: Parikshit Sahatiya, Sushmee Badhulika
    Abstract:

    In this work, we demonstrate for the first time, a solution-processed MoS2 (n)–CuO (p) piezotronic diode on a flexible paper substrate for an enhanced broadband photodetector and active Analog Frequency modulator by application of external mechanical strain. There are no reports on solution-processed large area fabrication of MoS2-based heterojunctions wherein the external mechanical strain modulates the transport properties at the device level which can be further utilized at the circuit level for Frequency modulation. When external strain is applied, because of the non-centrosymmetric structure of MoS2, the piezopotential induced adjusts the band structure at the junction and broadens the depletion region, which decreases the depletion capacitance of the diode. The widening of the depletion region improves the separation of photo-generated carriers and enhances the performance of the diode under both visible and NIR illumination. The fabricated piezotronic diode exhibited higher responsivity towards visible light illumination when compared to NIR illumination. The responsivity of the fabricated piezotronic diode increased by 69.7% under 2% strain. Such a versatile technique for fabrication of a diode and its utilization at both the device and circuit levels is a major step ahead in flexible and wearable electronics with applications ranging from digital, to Analog, and optoelectronics.

  • Fabrication of a solution-processed, highly flexible few layer MoS2 (n)–CuO (p) piezotronic diode on a paper substrate for an active Analog Frequency modulator and enhanced broadband photodetector
    Journal of Materials Chemistry C, 2017
    Co-Authors: Parikshit Sahatiya, Sushmee Badhulika
    Abstract:

    In this work, we demonstrate for the first time, a solution-processed MoS2 (n)–CuO (p) piezotronic diode on a flexible paper substrate for an enhanced broadband photodetector and active Analog Frequency modulator by application of external mechanical strain. There are no reports on solution-processed large area fabrication of MoS2-based heterojunctions wherein the external mechanical strain modulates the transport properties at the device level which can be further utilized at the circuit level for Frequency modulation. When external strain is applied, because of the non-centrosymmetric structure of MoS2, the piezopotential induced adjusts the band structure at the junction and broadens the depletion region, which decreases the depletion capacitance of the diode. The widening of the depletion region improves the separation of photo-generated carriers and enhances the performance of the diode under both visible and NIR illumination. The fabricated piezotronic diode exhibited higher responsivity towards visible light illumination when compared to NIR illumination. The responsivity of the fabricated piezotronic diode increased by 69.7% under 2% strain. Such a versatile technique for fabrication of a diode and its utilization at both the device and circuit levels is a major step ahead in flexible and wearable electronics with applications ranging from digital, to Analog, and optoelectronics.

Parikshit Sahatiya – One of the best experts on this subject based on the ideXlab platform.

  • fabrication of a solution processed highly flexible few layer mos2 n cuo p piezotronic diode on a paper substrate for an active Analog Frequency modulator and enhanced broadband photodetector
    Journal of Materials Chemistry C, 2017
    Co-Authors: Parikshit Sahatiya, Sushmee Badhulika
    Abstract:

    In this work, we demonstrate for the first time, a solution-processed MoS2 (n)–CuO (p) piezotronic diode on a flexible paper substrate for an enhanced broadband photodetector and active Analog Frequency modulator by application of external mechanical strain. There are no reports on solution-processed large area fabrication of MoS2-based heterojunctions wherein the external mechanical strain modulates the transport properties at the device level which can be further utilized at the circuit level for Frequency modulation. When external strain is applied, because of the non-centrosymmetric structure of MoS2, the piezopotential induced adjusts the band structure at the junction and broadens the depletion region, which decreases the depletion capacitance of the diode. The widening of the depletion region improves the separation of photo-generated carriers and enhances the performance of the diode under both visible and NIR illumination. The fabricated piezotronic diode exhibited higher responsivity towards visible light illumination when compared to NIR illumination. The responsivity of the fabricated piezotronic diode increased by 69.7% under 2% strain. Such a versatile technique for fabrication of a diode and its utilization at both the device and circuit levels is a major step ahead in flexible and wearable electronics with applications ranging from digital, to Analog, and optoelectronics.

  • Fabrication of a solution-processed, highly flexible few layer MoS2 (n)–CuO (p) piezotronic diode on a paper substrate for an active Analog Frequency modulator and enhanced broadband photodetector
    Journal of Materials Chemistry C, 2017
    Co-Authors: Parikshit Sahatiya, Sushmee Badhulika
    Abstract:

    In this work, we demonstrate for the first time, a solution-processed MoS2 (n)–CuO (p) piezotronic diode on a flexible paper substrate for an enhanced broadband photodetector and active Analog Frequency modulator by application of external mechanical strain. There are no reports on solution-processed large area fabrication of MoS2-based heterojunctions wherein the external mechanical strain modulates the transport properties at the device level which can be further utilized at the circuit level for Frequency modulation. When external strain is applied, because of the non-centrosymmetric structure of MoS2, the piezopotential induced adjusts the band structure at the junction and broadens the depletion region, which decreases the depletion capacitance of the diode. The widening of the depletion region improves the separation of photo-generated carriers and enhances the performance of the diode under both visible and NIR illumination. The fabricated piezotronic diode exhibited higher responsivity towards visible light illumination when compared to NIR illumination. The responsivity of the fabricated piezotronic diode increased by 69.7% under 2% strain. Such a versatile technique for fabrication of a diode and its utilization at both the device and circuit levels is a major step ahead in flexible and wearable electronics with applications ranging from digital, to Analog, and optoelectronics.

Juan Obregon – One of the best experts on this subject based on the ideXlab platform.

  • A new approach to nonlinear analysis of noise behavior of synchronized oscillators and AnalogFrequency dividers
    IEEE Transactions on Microwave Theory and Techniques, 1998
    Co-Authors: Jean-christophe Nallatamby, J.c. Sarkissian, Raymond Quéré, M. Prigent, Juan Obregon
    Abstract:

    An original theory of phase noise in synchronized oscillators is outlined through the phase-locked loop (PLL) approach. The phase-noise spectrum obtained first by the analytical PLL theory and then by a simulator have been compared with very good accuracy. This new approach permits the best understanding of noise conversion in synchronized devices.

  • A 60-GHz HEMT-MMIC Analog Frequency divider by two
    IEEE Journal of Solid-State Circuits, 1995
    Co-Authors: J.c. Sarkissian, M. Camiade, Almudena Suarez, P. Savary, Raymond Quéré, Juan Obregon
    Abstract:

    This paper describes an Analog Frequency divider by two working in the millimeter wave Frequency range around 60 GHz. This circuit is analyzed with a new method that allows one to determine the steady-state regime of any synchronized circuits with standard CAD commercial software. The method proposed relies upon the concept of open loop systems and is applicable to any feedback transistor circuits. The designed circuit was processed using a standard 0.25-/spl mu/m HEMT technology. Four transistors were used for realizing the Frequency division function as well as the input and output amplification. More than 10% Frequency lock-in bandwidth was achieved, and conversion gain was obtained using input and output buffers. Measured results were found to be in good agreement with simulated ones. >

  • A 60 GHz HEMT-MMIC Analog Frequency divider by two
    Proceedings of 1994 IEEE GaAs IC Symposium, 1
    Co-Authors: J.c. Sarkissian, M. Camiade, Almudena Suarez, P. Savary, Raymond Quéré, Juan Obregon
    Abstract:

    Monolithic technologies on GaAs allow us to build complex non-linear circuits at very high frequencies. However accurate predictions of circuit performances can be obtained only if non-linear CAD tools are available. A new method has been proposed allowing to overcome the difficulties encountered with commercial CAD software packages when we want to simulate synchronized circuits. For the first time a 60/30 GHz MMIC Analog Frequency divider has been designed and processed with a 0.25/spl mu/m HEMT process at the THOMSON-CSF foundry. The results obtained are very close to the predicted performances and allow us to think that broadband Analog Frequency dividers may now be designed at higher frequencies.

Almudena Suarez – One of the best experts on this subject based on the ideXlab platform.

  • Stochastic analysis of cycle slips in injection-locked oscillators and Analog Frequency dividers
    IEEE Transactions on Microwave Theory and Techniques, 2014
    Co-Authors: Sergio Sancho, Franco Ramirez, Almudena Suarez
    Abstract:

    This work was supported by the Spanish Ministry of Economy and Competitiveness under Contract TEC2011-29264-C03-01.

  • Phase-Noise Analysis of Injection-Locked Oscillators and Analog Frequency Dividers
    IEEE Transactions on Microwave Theory and Techniques, 2008
    Co-Authors: Franco Ramirez, Mabel Ponton, Sergio Sancho, Almudena Suarez
    Abstract:

    In-depth investigation of the phase-noise behavior of injection-locked oscillators and Analog Frequency dividers is presented. An analytical formulation has been obtained, which allows a better understanding of the shape of the output phasenoise spectrum of these circuits. The simplicity of this formulation is also helpful for circuit design. Approximate expressions for the corner frequencies of the spectrum are determined, identifying the most influential magnitudes and deriving design criteria. In particular, a technique has been developed to shift the Frequency of the first corner of the phase-noise spectrum, up to which the output phasphase noise follows the input one. The expressions for the corner frequencies can be introduced in either in-house or commercial harmonic-balance software, thus allowing an agile design, as no separate phase-noise analysis is required. The validity of the analytical techniques is verified with the conversion-matrix approach and with measurements using two field-effect-transistor-based circuits: a 4.9-GHz injection-locked oscillator and a Frequency divider by 2 with 9.8-GHz input Frequency.

  • Accurate determination of Frequency dividers operating bands
    IEEE Microwave and Guided Wave Letters, 1996
    Co-Authors: J. Morales, Almudena Suarez, Raymond Quéré
    Abstract:

    In Analog Frequency dividers, phenomena such as harmonic synchronization and jumps between coexisting quasiperiodic and Frequency divided paths must be taken into account in order to accurately predict their operation ranges. This has been done in this letter by means of a detailed bifurcation analysis. A simple simulation technique is also proposed for determining the second harmonic synchronization locus. A MMIC Frequency divider has been thoroughly analyzed, obtaining an excellent agreement with measurements.

Raymond Quéré – One of the best experts on this subject based on the ideXlab platform.

  • A new approach to nonlinear analysis of noise behavior of synchronized oscillators and AnalogFrequency dividers
    IEEE Transactions on Microwave Theory and Techniques, 1998
    Co-Authors: Jean-christophe Nallatamby, J.c. Sarkissian, Raymond Quéré, M. Prigent, Juan Obregon
    Abstract:

    An original theory of phase noise in synchronized oscillators is outlined through the phase-locked loop (PLL) approach. The phase-noise spectrum obtained first by the analytical PLL theory and then by a simulator have been compared with very good accuracy. This new approach permits the best understanding of noise conversion in synchronized devices.

  • Accurate determination of Frequency dividers operating bands
    IEEE Microwave and Guided Wave Letters, 1996
    Co-Authors: J. Morales, Almudena Suarez, Raymond Quéré
    Abstract:

    In Analog Frequency dividers, phenomena such as harmonic synchronization and jumps between coexisting quasiperiodic and Frequency divided paths must be taken into account in order to accurately predict their operation ranges. This has been done in this letter by means of a detailed bifurcation analysis. A simple simulation technique is also proposed for determining the second harmonic synchronization locus. A MMIC Frequency divider has been thoroughly analyzed, obtaining an excellent agreement with measurements.

  • A 60-GHz HEMT-MMIC Analog Frequency divider by two
    IEEE Journal of Solid-State Circuits, 1995
    Co-Authors: J.c. Sarkissian, M. Camiade, Almudena Suarez, P. Savary, Raymond Quéré, Juan Obregon
    Abstract:

    This paper describes an Analog Frequency divider by two working in the millimeter wave Frequency range around 60 GHz. This circuit is analyzed with a new method that allows one to determine the steady-state regime of any synchronized circuits with standard CAD commercial software. The method proposed relies upon the concept of open loop systems and is applicable to any feedback transistor circuits. The designed circuit was processed using a standard 0.25-/spl mu/m HEMT technology. Four transistors were used for realizing the Frequency division function as well as the input and output amplification. More than 10% Frequency lock-in bandwidth was achieved, and conversion gain was obtained using input and output buffers. Measured results were found to be in good agreement with simulated ones. >