Annealing

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S.c. Harn - One of the best experts on this subject based on the ideXlab platform.

  • Shallow p/sup +/n junctions formed by using a two-step Annealing scheme with low thermal budget
    IEEE Electron Device Letters, 1999
    Co-Authors: M.h. Juang, S.c. Harn
    Abstract:

    Shallow p/sup +/n junctions have been formed by directly implanting BF/sub 2/ dopant into the Si substrate and then treating the samples by an Annealing scheme with low thermal budget. A junction leakage smaller than 10 nA/cm/sup 2/ can be achieved by an Annealing scheme that employs low-temperature long-time furnace Annealing (FA) at 600/spl deg/C for 3 h followed by medium-temperature rapid thermal Annealing (RTA) at 800/spl deg/C for 30 s. No considerable dopant diffusion is observed by using this low-thermal-budget Annealing process. In addition, a moderate low-temperature Annealing time of about 2-3 h should be employed to optimize the shallow p/sup +/n junction formed by this scheme. However, the Annealing process that employs medium-temperature RTA followed by low-temperature FA treatment produces worse junctions than the Annealing scheme that employs long-time FA at 600/spl deg/C followed by RTA at 800/spl deg/C.

N. F. Chen - One of the best experts on this subject based on the ideXlab platform.

  • Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
    Journal of Applied Physics, 2009
    Co-Authors: P. F. Cai, J. B. You, J.-j. Dong, Z. G. Yin, X.w. Zhang, X.l. Yang, N. F. Chen
    Abstract:

    We studied the effects of hydrogen plasma treatment on the electrical\nand optical properties of ZnO films deposited by radio frequency\nmagnetron sputtering. It is found that the ZnO:H film is highly\ntransparent with the average transmittance of 92% in the visible range.\nBoth carrier concentration and mobility are increased after hydrogen\nplasma treatment, correspondingly, the resistivity of the ZnO:H films\nachieves the order of 10^{-3} {Ω} cm. We suggest that the\nincorporated hydrogen not only passivates most of the defects and/or\nacceptors present, but also introduces shallow donor states such as the\nVO-H complex and the interstitial hydrogen H_{i}. Moreover, the\nAnnealing data indicate that H_{i} is unstable in ZnO, while the\nVO-H complex remains stable on the whole at 400 {\deg}C, and the latter\ndiffuses out when the Annealing temperature increases to 500 {\deg}C.\nThese results make ZnO:H more attractive for future applications as\ntransparent conducting electrodes.\n

M.h. Juang - One of the best experts on this subject based on the ideXlab platform.

  • Shallow p/sup +/n junctions formed by using a two-step Annealing scheme with low thermal budget
    IEEE Electron Device Letters, 1999
    Co-Authors: M.h. Juang, S.c. Harn
    Abstract:

    Shallow p/sup +/n junctions have been formed by directly implanting BF/sub 2/ dopant into the Si substrate and then treating the samples by an Annealing scheme with low thermal budget. A junction leakage smaller than 10 nA/cm/sup 2/ can be achieved by an Annealing scheme that employs low-temperature long-time furnace Annealing (FA) at 600/spl deg/C for 3 h followed by medium-temperature rapid thermal Annealing (RTA) at 800/spl deg/C for 30 s. No considerable dopant diffusion is observed by using this low-thermal-budget Annealing process. In addition, a moderate low-temperature Annealing time of about 2-3 h should be employed to optimize the shallow p/sup +/n junction formed by this scheme. However, the Annealing process that employs medium-temperature RTA followed by low-temperature FA treatment produces worse junctions than the Annealing scheme that employs long-time FA at 600/spl deg/C followed by RTA at 800/spl deg/C.

P. F. Cai - One of the best experts on this subject based on the ideXlab platform.

  • Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
    Journal of Applied Physics, 2009
    Co-Authors: P. F. Cai, J. B. You, J.-j. Dong, Z. G. Yin, X.w. Zhang, X.l. Yang, N. F. Chen
    Abstract:

    We studied the effects of hydrogen plasma treatment on the electrical\nand optical properties of ZnO films deposited by radio frequency\nmagnetron sputtering. It is found that the ZnO:H film is highly\ntransparent with the average transmittance of 92% in the visible range.\nBoth carrier concentration and mobility are increased after hydrogen\nplasma treatment, correspondingly, the resistivity of the ZnO:H films\nachieves the order of 10^{-3} {Ω} cm. We suggest that the\nincorporated hydrogen not only passivates most of the defects and/or\nacceptors present, but also introduces shallow donor states such as the\nVO-H complex and the interstitial hydrogen H_{i}. Moreover, the\nAnnealing data indicate that H_{i} is unstable in ZnO, while the\nVO-H complex remains stable on the whole at 400 {\deg}C, and the latter\ndiffuses out when the Annealing temperature increases to 500 {\deg}C.\nThese results make ZnO:H more attractive for future applications as\ntransparent conducting electrodes.\n

Nguyen Q. Khánh - One of the best experts on this subject based on the ideXlab platform.

  • evolution of the structure and hydrogen bonding configuration in annealed hydrogenated a si a ge multilayers and layers
    Applied Surface Science, 2013
    Co-Authors: Cesare Frigeri, Miklos Serenyi, Attila Csik, Zsolt Szekrenyes, Katalin Kamaras, Lucia Nasi, Nguyen Q. Khánh
    Abstract:

    Abstract The evolution of the structure and of the hydrogen bonding configuration in hydrogenated a-Si/a-Ge multilayers prepared by RF sputtering is analyzed as a function of Annealing. Single layers are also investigated to better evaluate the H behavior. IR absorption measurements show that H is released from its bonds to Si and Ge upon Annealing. The mono-hydrides already disappear to a large extent for low Annealing times (1 and 4 h), being replaced by di-hydrides, especially in the case of Si. For 10 h Annealing both mono- and di-hydrides are almost completely destroyed. At the same time surface blisters form which, for the same Annealing conditions, increase in size with increasing incorporated H in the as-deposited sample. It is concluded that the blisters in the multilayers are due to the trapping of the released H in cavities that increase in size upon Annealing. The enlarged inner surface of the cavities is the candidate site for the formation of the di-hydrides at low Annealing times, i.e., when the thermal energy supplied by the Annealing is still insufficient to break all of them.

  • Scanning Infrared Microscopy Study of Annealing Behavior of Interfacial Micro-Voids in Direct Bonded Silicon
    Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European, 1995
    Co-Authors: Nguyen Q. Khánh, Andras Hamori, István Bársony, C. S. Dücsö, Marvin Fried
    Abstract:

    The density of micro-voids with dimensions from several to a few tens ¿m at the interface of bonded silicon wafers formed during Annealing at different temperatures was investigated by using a submicron resolution Scanning Infrared Microscope (SIRM). For low temperature heat treatment (400°C) the density and size (i.e. area) of micro-voids have been found to be much larger in the case of bonding with hydrophilic wafers than for the hydrophobic one. By increasing the amnealing temperature up to 1150°C, the density and size of micro-voids decreased in both cases, but more significantly for hydrophobic wafer bonding. The cause of the different Annealing behaviour of micro-voids between hydrophilic and hydrophobic samples is believed to be the native oxide forming only on the surface of the hydrophilic wafers during storage and surface treatment.