Annealing - Explore the Science & Experts | ideXlab

Scan Science and Technology

Contact Leading Edge Experts & Companies

Annealing

The Experts below are selected from a list of 315 Experts worldwide ranked by ideXlab platform

S.c. Harn – 1st expert on this subject based on the ideXlab platform

  • Shallow p/sup +/n junctions formed by using a two-step Annealing scheme with low thermal budget
    IEEE Electron Device Letters, 1999
    Co-Authors: M.h. Juang, S.c. Harn

    Abstract:

    Shallow p/sup +/n junctions have been formed by directly implanting BF/sub 2/ dopant into the Si substrate and then treating the samples by an Annealing scheme with low thermal budget. A junction leakage smaller than 10 nA/cm/sup 2/ can be achieved by an Annealing scheme that employs low-temperature long-time furnace Annealing (FA) at 600/spl deg/C for 3 h followed by medium-temperature rapid thermal Annealing (RTA) at 800/spl deg/C for 30 s. No considerable dopant diffusion is observed by using this low-thermal-budget Annealing process. In addition, a moderate low-temperature Annealing time of about 2-3 h should be employed to optimize the shallow p/sup +/n junction formed by this scheme. However, the Annealing process that employs medium-temperature RTA followed by low-temperature FA treatment produces worse junctions than the Annealing scheme that employs long-time FA at 600/spl deg/C followed by RTA at 800/spl deg/C.

N. F. Chen – 2nd expert on this subject based on the ideXlab platform

  • Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
    Journal of Applied Physics, 2009
    Co-Authors: P. F. Cai, J. B. You, X.w. Zhang, J.-j. Dong, X.l. Yang, Z. G. Yin, N. F. Chen

    Abstract:

    We studied the effects of hydrogen plasma treatment on the electrical\nand optical properties of ZnO films deposited by radio frequency\nmagnetron sputtering. It is found that the ZnO:H film is highly\ntransparent with the average transmittance of 92% in the visible range.\nBoth carrier concentration and mobility are increased after hydrogen\nplasma treatment, correspondingly, the resistivity of the ZnO:H films\nachieves the order of 10^{-3} {Ω} cm. We suggest that the\nincorporated hydrogen not only passivates most of the defects and/or\nacceptors present, but also introduces shallow donor states such as the\nVO-H complex and the interstitial hydrogen H_{i}. Moreover, the\nAnnealing data indicate that H_{i} is unstable in ZnO, while the\nVO-H complex remains stable on the whole at 400 {\deg}C, and the latter\ndiffuses out when the Annealing temperature increases to 500 {\deg}C.\nThese results make ZnO:H more attractive for future applications as\ntransparent conducting electrodes.\n

M.h. Juang – 3rd expert on this subject based on the ideXlab platform

  • Shallow p/sup +/n junctions formed by using a two-step Annealing scheme with low thermal budget
    IEEE Electron Device Letters, 1999
    Co-Authors: M.h. Juang, S.c. Harn

    Abstract:

    Shallow p/sup +/n junctions have been formed by directly implanting BF/sub 2/ dopant into the Si substrate and then treating the samples by an Annealing scheme with low thermal budget. A junction leakage smaller than 10 nA/cm/sup 2/ can be achieved by an Annealing scheme that employs low-temperature long-time furnace Annealing (FA) at 600/spl deg/C for 3 h followed by medium-temperature rapid thermal Annealing (RTA) at 800/spl deg/C for 30 s. No considerable dopant diffusion is observed by using this low-thermal-budget Annealing process. In addition, a moderate low-temperature Annealing time of about 2-3 h should be employed to optimize the shallow p/sup +/n junction formed by this scheme. However, the Annealing process that employs medium-temperature RTA followed by low-temperature FA treatment produces worse junctions than the Annealing scheme that employs long-time FA at 600/spl deg/C followed by RTA at 800/spl deg/C.