The Experts below are selected from a list of 297 Experts worldwide ranked by ideXlab platform

S. M. Bedair - One of the best experts on this subject based on the ideXlab platform.

  • Recent Progress in Atomic Layer Epitaxy of III–V Compounds
    MRS Proceedings, 2011
    Co-Authors: S. M. Bedair
    Abstract:

    ABSTRACTThe potential applications of Atomic Layer Epitaxy of III–V compounds will be outlined. These include the growth of special structures and devices such as ordered alloys, ultra-thin quantum wells, non-alloyed contacts, planar doped FET's and HBT's. Also, the main challenges facing ALE will be outlined along with possible solutions. These include reactor design, control of carbon doping and the growth of ternary alloys. A general assessment of the ALE technology will be provided.

  • high quality ingan films by Atomic Layer Epitaxy
    Applied Physics Letters, 1995
    Co-Authors: Karim S Boutros, S. M. Bedair, F G Mcintosh, J C Roberts, E L Piner, N A Elmasry
    Abstract:

    InxGa1−xN single‐crystal films were grown at 600–700 °C by Atomic Layer Epitaxy (ALE). InGaN films with compositions of up to 27% indium were achieved. The full width at half‐maximum (FWHM) of the (0002) InxGa1−xN peak by double crystal x‐ray diffraction (DCXRD) was as small as 6 min, the lowest value reported for this ternary alloy. Strong photoluminescence band edge emission between 360 and 446 nm was observed at room temperature. These low temperature ALE grown films were achieved without the need to use excessive flows of the In organometallic source and thus demonstrate the potential for growth of this ternary alloy over the entire composition range.

  • growth of device quality gan at 550 c by Atomic Layer Epitaxy
    Applied Physics Letters, 1995
    Co-Authors: N H Karam, T Parodos, Peter C Colter, D Mcnulty, W Rowland, J F Schetzina, N A Elmasry, S. M. Bedair
    Abstract:

    GaN single crystal films were grown by Atomic Layer Epitaxy at 550 °C. The room temperature photoluminescence properties of these low‐temperature‐grown films are dominated by band edge emission with intensity comparable to those grown by metalorganic chemical vapor deposition at 1000 °C. The as‐grown films have background‐carrier concentrations that can be controlled to levels in the 1016/cm−3 range. Atomic Layer Epitaxy is therefore a good approach to the low temperature growth of nitride compounds.

  • Selenium doping of GalnP by Atomic Layer Epitaxy
    Journal of Electronic Materials, 1995
    Co-Authors: D. Jung, N. A. El-masry, M. Leonard, S. M. Bedair
    Abstract:

    Selenium doping of GalnP was performed using Atomic Layer Epitaxy. The dependence of the n-type carrier concentration of Se-doped GalnP on growth temperature was quite different from that of Se-doped GaAs. Reducing growth temperature was found to be a crucial factor in achieving high n-type doping levels in as-grown Se-doped GalnP.

  • Atomic Layer Epitaxy deposition processes
    Journal of Vacuum Science & Technology B, 1994
    Co-Authors: S. M. Bedair
    Abstract:

    Atomic Layer Epitaxy (ALE) is emerging as a promising epitaxial growth technique for thickness control at the Atomic level. The article outlines recent progress in ALE of III–V and Si thin films. Also models describing the self‐limiting processes will be outlined.

M. Leskelä - One of the best experts on this subject based on the ideXlab platform.

  • use of Atomic Layer Epitaxy for fabrication of si tin cu structures
    Journal of Vacuum Science & Technology B, 1999
    Co-Authors: Per Martensson, M. Leskelä, Marika Juppo, Mikko Ritala, Janotto Carlsson
    Abstract:

    The properties of titanium nitride deposited by Atomic Layer Epitaxy (ALE) using three different deposition processes, i.e., TiI4+NH3, TiCl4+NH3 and TiCl4+Zn+NH3, as a diffusion barrier between cop ...

  • Use of Atomic Layer Epitaxy for fabrication of Si/TiN/Cu structures
    Journal of Vacuum Science & Technology B, 1999
    Co-Authors: Per Martensson, M. Leskelä, Marika Juppo, Mikko Ritala, Janotto Carlsson
    Abstract:

    The properties of titanium nitride deposited by Atomic Layer Epitaxy (ALE) using three different deposition processes, i.e., TiI4+NH3, TiCl4+NH3 and TiCl4+Zn+NH3, as a diffusion barrier between cop ...

  • Atomic Layer Epitaxy a valuable tool for nanotechnology
    Nanotechnology, 1999
    Co-Authors: Mikko Ritala, M. Leskelä
    Abstract:

    Atomic Layer Epitaxy (ALE) is a surface controlled, self-limiting method for depositing thin films from gaseous precursors. In this paper the basic principle of ALE and its potentials for nanotechnology are introduced. From the point of view of nanotechnology the most important benefits of ALE are excellent conformality and easily realized subnanometre level accuracy in controlling film thicknesses, which are discussed in more detail with selected examples from thin-film technology. Studies on ALE preparation of laterally confined structures are also reviewed. The paper concludes with an outlook discussing the capabilities and challenges of using ALE in nanotechnology in depositing materials with one or several dimensions confined to the nanometre level.

  • Atomic Layer Epitaxy—a valuable tool for nanotechnology?
    Nanotechnology, 1999
    Co-Authors: Mikko Ritala, M. Leskelä
    Abstract:

    Atomic Layer Epitaxy (ALE) is a surface controlled, self-limiting method for depositing thin films from gaseous precursors. In this paper the basic principle of ALE and its potentials for nanotechnology are introduced. From the point of view of nanotechnology the most important benefits of ALE are excellent conformality and easily realized subnanometre level accuracy in controlling film thicknesses, which are discussed in more detail with selected examples from thin-film technology. Studies on ALE preparation of laterally confined structures are also reviewed. The paper concludes with an outlook discussing the capabilities and challenges of using ALE in nanotechnology in depositing materials with one or several dimensions confined to the nanometre level.

  • niobium oxide thin films grown by Atomic Layer Epitaxy
    Chemical Vapor Deposition, 1998
    Co-Authors: Kaupo Kukli, M. Leskelä, Mikko Ritala, R Lappalainen
    Abstract:

    Nb2O5 thin films were grown by Atomic Layer Epitaxy (ALE) in the temperature range of 150–350°C using Nb(OC2H5)5 and H2O as precursors. All the films grown on glass substrates were amorphous, as indicated by X-ray diffraction analysis. The films exhibited smooth surfaces as observed by scanning electron microscopy and uniform thickness profiles with less than 7% variation in the gas flow direction. The refractive index of the films increased with deposition temperature, stabilizing at 2.4 at temperatures higher than 230°C. Backscattering spectrometry analysis indicated that the films were stoichiometric Nb2O5.

Mikko Ritala - One of the best experts on this subject based on the ideXlab platform.

  • use of Atomic Layer Epitaxy for fabrication of si tin cu structures
    Journal of Vacuum Science & Technology B, 1999
    Co-Authors: Per Martensson, M. Leskelä, Marika Juppo, Mikko Ritala, Janotto Carlsson
    Abstract:

    The properties of titanium nitride deposited by Atomic Layer Epitaxy (ALE) using three different deposition processes, i.e., TiI4+NH3, TiCl4+NH3 and TiCl4+Zn+NH3, as a diffusion barrier between cop ...

  • Use of Atomic Layer Epitaxy for fabrication of Si/TiN/Cu structures
    Journal of Vacuum Science & Technology B, 1999
    Co-Authors: Per Martensson, M. Leskelä, Marika Juppo, Mikko Ritala, Janotto Carlsson
    Abstract:

    The properties of titanium nitride deposited by Atomic Layer Epitaxy (ALE) using three different deposition processes, i.e., TiI4+NH3, TiCl4+NH3 and TiCl4+Zn+NH3, as a diffusion barrier between cop ...

  • Atomic Layer Epitaxy a valuable tool for nanotechnology
    Nanotechnology, 1999
    Co-Authors: Mikko Ritala, M. Leskelä
    Abstract:

    Atomic Layer Epitaxy (ALE) is a surface controlled, self-limiting method for depositing thin films from gaseous precursors. In this paper the basic principle of ALE and its potentials for nanotechnology are introduced. From the point of view of nanotechnology the most important benefits of ALE are excellent conformality and easily realized subnanometre level accuracy in controlling film thicknesses, which are discussed in more detail with selected examples from thin-film technology. Studies on ALE preparation of laterally confined structures are also reviewed. The paper concludes with an outlook discussing the capabilities and challenges of using ALE in nanotechnology in depositing materials with one or several dimensions confined to the nanometre level.

  • Atomic Layer Epitaxy—a valuable tool for nanotechnology?
    Nanotechnology, 1999
    Co-Authors: Mikko Ritala, M. Leskelä
    Abstract:

    Atomic Layer Epitaxy (ALE) is a surface controlled, self-limiting method for depositing thin films from gaseous precursors. In this paper the basic principle of ALE and its potentials for nanotechnology are introduced. From the point of view of nanotechnology the most important benefits of ALE are excellent conformality and easily realized subnanometre level accuracy in controlling film thicknesses, which are discussed in more detail with selected examples from thin-film technology. Studies on ALE preparation of laterally confined structures are also reviewed. The paper concludes with an outlook discussing the capabilities and challenges of using ALE in nanotechnology in depositing materials with one or several dimensions confined to the nanometre level.

  • niobium oxide thin films grown by Atomic Layer Epitaxy
    Chemical Vapor Deposition, 1998
    Co-Authors: Kaupo Kukli, M. Leskelä, Mikko Ritala, R Lappalainen
    Abstract:

    Nb2O5 thin films were grown by Atomic Layer Epitaxy (ALE) in the temperature range of 150–350°C using Nb(OC2H5)5 and H2O as precursors. All the films grown on glass substrates were amorphous, as indicated by X-ray diffraction analysis. The films exhibited smooth surfaces as observed by scanning electron microscopy and uniform thickness profiles with less than 7% variation in the gas flow direction. The refractive index of the films increased with deposition temperature, stabilizing at 2.4 at temperatures higher than 230°C. Backscattering spectrometry analysis indicated that the films were stoichiometric Nb2O5.

N A Elmasry - One of the best experts on this subject based on the ideXlab platform.

  • high quality ingan films by Atomic Layer Epitaxy
    Applied Physics Letters, 1995
    Co-Authors: Karim S Boutros, S. M. Bedair, F G Mcintosh, J C Roberts, E L Piner, N A Elmasry
    Abstract:

    InxGa1−xN single‐crystal films were grown at 600–700 °C by Atomic Layer Epitaxy (ALE). InGaN films with compositions of up to 27% indium were achieved. The full width at half‐maximum (FWHM) of the (0002) InxGa1−xN peak by double crystal x‐ray diffraction (DCXRD) was as small as 6 min, the lowest value reported for this ternary alloy. Strong photoluminescence band edge emission between 360 and 446 nm was observed at room temperature. These low temperature ALE grown films were achieved without the need to use excessive flows of the In organometallic source and thus demonstrate the potential for growth of this ternary alloy over the entire composition range.

  • growth of device quality gan at 550 c by Atomic Layer Epitaxy
    Applied Physics Letters, 1995
    Co-Authors: N H Karam, T Parodos, Peter C Colter, D Mcnulty, W Rowland, J F Schetzina, N A Elmasry, S. M. Bedair
    Abstract:

    GaN single crystal films were grown by Atomic Layer Epitaxy at 550 °C. The room temperature photoluminescence properties of these low‐temperature‐grown films are dominated by band edge emission with intensity comparable to those grown by metalorganic chemical vapor deposition at 1000 °C. The as‐grown films have background‐carrier concentrations that can be controlled to levels in the 1016/cm−3 range. Atomic Layer Epitaxy is therefore a good approach to the low temperature growth of nitride compounds.

  • Atomic Layer Epitaxy of gainp ordered alloy
    Applied Physics Letters, 1990
    Co-Authors: B. T. Mcdermott, Walter M. Duncan, S. M. Bedair, Kimberly G. Reid, N A Elmasry, Fred H. Pollak
    Abstract:

    We report on the successful growth of ordered GaInP by Atomic Layer Epitaxy on a GaAs substrate. The growth was achieved by alternate exposures to TEI, PH3, TMGa, and PH3 fluxes, and epiLayers were found to closely match the GaAs substrate irrespective of the growth conditions. Room‐temperature photoreflectance results indicate a band gap of 1.78 eV, the lowest value yet reported for such ordered alloys. Photoluminescence shows an anomalous temperature dependence behavior and transmission electron microscopy studies indicate that ordering takes place preferentially on (111) alternating planes.

Masakiyo Matsumura - One of the best experts on this subject based on the ideXlab platform.

  • Atomic-Layer Epitaxy of Silicon on (100) Surface
    Japanese Journal of Applied Physics, 2000
    Co-Authors: Yasuo Satoh, Keiji Ikeda, Satoshi Sugahara, Masakiyo Matsumura
    Abstract:

    Atomic-Layer Epitaxy (ALE) of Si on the (100) surface has been studied. The ALE temperature window for the (100) surface was as wide as that for the (111) surface, under optimum hydrogen pressure conditions. The grown film surface was smooth only within the upper half of the window. Surface roughness increased with ALE execution cycle, due to the combined dynamic effects of excess growth, etching and surface migration of adsorbates within an execution cycle, but took an extremely small value under a special set of ALE parameters.

  • Hetero Atomic-Layer Epitaxy of Ge on Si(100)
    Japanese Journal of Applied Physics, 2000
    Co-Authors: Motohiro Matsuyama, Keiji Ikeda, Satoshi Sugahara, Yasutaka Uchida, Masakiyo Matsumura
    Abstract:

    Hetero Atomic-Layer Epitaxy of Ge on the Si(100) surface has been successfully demonstrated. The Si underLayer was found to have strong influences on the adsorption kinetics of a Ge precursor, but a discrete increase in the grown-film thickness was achieved with a one-monoLayer step up to the critical thickness of the Ge Layer. The periodicity of vacancy lines in the grown Ge Layer is shortened in pitch with increasing the number of Ge growth cycles, reconfirming that the Ge Layer was grown in a Layer-by-Layer manner. C atoms were not introduced in the grown film when the growth temperature was about 420°C.

  • Gas-phase-reaction-controlled Atomic-Layer-Epitaxy of silicon
    Journal of Vacuum Science and Technology, 1998
    Co-Authors: Eiji Hasunuma, Shinji Hoshino, Shigeru Imai, Keiji Ikeda, Satoshi Sugahara, Masakiyo Matsumura
    Abstract:

    Atomic Layer Epitaxy of silicon has been studied by alternating exposures of Atomic hydrogen and SiH2Cl2. An ideal growth rate of 1 monoLayer per cycle has been achieved with a wide temperature window from 550 °C to 610 °C under long SiH2Cl2 residence time and high pressure conditions. These requirements seem to come from the generation of dense SiHCl, the desirable precursor, by gas-phase reaction of SiH2Cl2.

  • Modeling of germanium Atomic-Layer-Epitaxy
    Applied Surface Science, 1997
    Co-Authors: Satoshi Sugahara, Masakiyo Matsumura
    Abstract:

    Abstract Atomic-Layer-Epitaxy (ALE) of germanium has been analyzed by a kinetic model and a thermodynamic model. Chlorogermanes are found to be unsuitable since they cannot satisfy the self-limiting adsorption condition due to quick thermal desorption of HCl from the surface. On the other hand, the ideal growth rate of one monoLayer per cycle is expected for dimethylgermane. This is because there exists no recombinative desorption reaction between surface methyl groups and H that will break the self-limiting adsorption condition. It has also been confirmed, from thermodynamic considerations, that the elemental chemical reactions used in this ALE, i.e., self-limiting adsorption and reduction of surface methyl groups by Atomic hydrogen, are spontaneous.

  • Modeling of silicon Atomic-Layer-Epitaxy
    Applied Surface Science, 1996
    Co-Authors: Satoshi Sugahara, Eiji Hasunuma, Sigeru Imai, Masakiyo Matsumura
    Abstract:

    Abstract A kinetic model has been presented for Atomic Layer Epitaxy of Si using cyclic exposures of SiH 2 Cl 2 and Atomic hydrogen. This model is based on the surface reaction of adsorbates formed by gas-phase reaction of SiH 2 Cl 2 . The ideal growth rate of one monoLayer per cycle is achieved only when the dominant precursor is SiHCl. Limiting factors of the ALE window are also discussed.