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Atomic Layer Epitaxy

The Experts below are selected from a list of 297 Experts worldwide ranked by ideXlab platform

S. M. Bedair – 1st expert on this subject based on the ideXlab platform

  • Recent Progress in Atomic Layer Epitaxy of III–V Compounds
    MRS Proceedings, 2011
    Co-Authors: S. M. Bedair

    Abstract:

    ABSTRACTThe potential applications of Atomic Layer Epitaxy of III–V compounds will be outlined. These include the growth of special structures and devices such as ordered alloys, ultra-thin quantum wells, non-alloyed contacts, planar doped FET’s and HBT’s. Also, the main challenges facing ALE will be outlined along with possible solutions. These include reactor design, control of carbon doping and the growth of ternary alloys. A general assessment of the ALE technology will be provided.

  • high quality ingan films by Atomic Layer Epitaxy
    Applied Physics Letters, 1995
    Co-Authors: Karim S Boutros, S. M. Bedair, F G Mcintosh, J C Roberts, E L Piner, N A Elmasry

    Abstract:

    InxGa1−xN single‐crystal films were grown at 600–700 °C by Atomic Layer Epitaxy (ALE). InGaN films with compositions of up to 27% indium were achieved. The full width at half‐maximum (FWHM) of the (0002) InxGa1−xN peak by double crystal x‐ray diffraction (DCXRD) was as small as 6 min, the lowest value reported for this ternary alloy. Strong photoluminescence band edge emission between 360 and 446 nm was observed at room temperature. These low temperature ALE grown films were achieved without the need to use excessive flows of the In organometallic source and thus demonstrate the potential for growth of this ternary alloy over the entire composition range.

  • growth of device quality gan at 550 c by Atomic Layer Epitaxy
    Applied Physics Letters, 1995
    Co-Authors: N H Karam, T Parodos, Peter C Colter, D Mcnulty, W Rowland, J F Schetzina, N A Elmasry, S. M. Bedair

    Abstract:

    GaN single crystal films were grown by Atomic Layer Epitaxy at 550 °C. The room temperature photoluminescence properties of these low‐temperature‐grown films are dominated by band edge emission with intensity comparable to those grown by metalorganic chemical vapor deposition at 1000 °C. The as‐grown films have background‐carrier concentrations that can be controlled to levels in the 1016/cm−3 range. Atomic Layer Epitaxy is therefore a good approach to the low temperature growth of nitride compounds.

M. Leskelä – 2nd expert on this subject based on the ideXlab platform

  • use of Atomic Layer Epitaxy for fabrication of si tin cu structures
    Journal of Vacuum Science & Technology B, 1999
    Co-Authors: Per Martensson, M. Leskelä, Marika Juppo, Mikko Ritala, Janotto Carlsson

    Abstract:

    The properties of titanium nitride deposited by Atomic Layer Epitaxy (ALE) using three different deposition processes, i.e., TiI4+NH3, TiCl4+NH3 and TiCl4+Zn+NH3, as a diffusion barrier between cop …

  • Use of Atomic Layer Epitaxy for fabrication of Si/TiN/Cu structures
    Journal of Vacuum Science & Technology B, 1999
    Co-Authors: Per Martensson, M. Leskelä, Marika Juppo, Mikko Ritala, Janotto Carlsson

    Abstract:

    The properties of titanium nitride deposited by Atomic Layer Epitaxy (ALE) using three different deposition processes, i.e., TiI4+NH3, TiCl4+NH3 and TiCl4+Zn+NH3, as a diffusion barrier between cop …

  • Atomic Layer Epitaxy a valuable tool for nanotechnology
    Nanotechnology, 1999
    Co-Authors: Mikko Ritala, M. Leskelä

    Abstract:

    Atomic Layer Epitaxy (ALE) is a surface controlled, self-limiting method for depositing thin films from gaseous precursors. In this paper the basic principle of ALE and its potentials for nanotechnology are introduced. From the point of view of nanotechnology the most important benefits of ALE are excellent conformality and easily realized subnanometre level accuracy in controlling film thicknesses, which are discussed in more detail with selected examples from thin-film technology. Studies on ALE preparation of laterally confined structures are also reviewed. The paper concludes with an outlook discussing the capabilities and challenges of using ALE in nanotechnology in depositing materials with one or several dimensions confined to the nanometre level.

Mikko Ritala – 3rd expert on this subject based on the ideXlab platform

  • use of Atomic Layer Epitaxy for fabrication of si tin cu structures
    Journal of Vacuum Science & Technology B, 1999
    Co-Authors: Per Martensson, M. Leskelä, Marika Juppo, Mikko Ritala, Janotto Carlsson

    Abstract:

    The properties of titanium nitride deposited by Atomic Layer Epitaxy (ALE) using three different deposition processes, i.e., TiI4+NH3, TiCl4+NH3 and TiCl4+Zn+NH3, as a diffusion barrier between cop …

  • Use of Atomic Layer Epitaxy for fabrication of Si/TiN/Cu structures
    Journal of Vacuum Science & Technology B, 1999
    Co-Authors: Per Martensson, M. Leskelä, Marika Juppo, Mikko Ritala, Janotto Carlsson

    Abstract:

    The properties of titanium nitride deposited by Atomic Layer Epitaxy (ALE) using three different deposition processes, i.e., TiI4+NH3, TiCl4+NH3 and TiCl4+Zn+NH3, as a diffusion barrier between cop …

  • Atomic Layer Epitaxy a valuable tool for nanotechnology
    Nanotechnology, 1999
    Co-Authors: Mikko Ritala, M. Leskelä

    Abstract:

    Atomic Layer Epitaxy (ALE) is a surface controlled, self-limiting method for depositing thin films from gaseous precursors. In this paper the basic principle of ALE and its potentials for nanotechnology are introduced. From the point of view of nanotechnology the most important benefits of ALE are excellent conformality and easily realized subnanometre level accuracy in controlling film thicknesses, which are discussed in more detail with selected examples from thin-film technology. Studies on ALE preparation of laterally confined structures are also reviewed. The paper concludes with an outlook discussing the capabilities and challenges of using ALE in nanotechnology in depositing materials with one or several dimensions confined to the nanometre level.