The Experts below are selected from a list of 7221 Experts worldwide ranked by ideXlab platform
Makoto Ishida - One of the best experts on this subject based on the ideXlab platform.
-
IMPROVEMENT OF THERMAL RESPONSE IN TEMPERATURE CONTROLLED OVER A WIDE TEMPERATURE RANGE PRECISE THREE-Axis Accelerometer WITH STABlLIZED CHARACTERISTICS
2005Co-Authors: Hidekuni Takao, Kazuaki Sawada, Hee Don Seo, Makoto IshidaAbstract:In this paper, improvement of thermal response time of a temperature controlled three-Axis Accelerometer for high temperature environments with integrated microheaters and temperature sensors is presented. More detailed analysis of thermal response is carried out, and variation of thermal response with supply power energy is investigatcd using simplified finite element method (FEM) model based on thermal response analysis. Thermal response analysis of the devices is investigated with FEM program, ANSYS and infrared thermal measurement systems. And availability to application fields from a viewpoint about short thermal response time is discussed. In this paper, the time of three-Axis Accelerometer for high temperatures becoming 300°C by integrated micro-heaters and temperature sensors to reduce thermal drift characteristics was analyzed as a thermal response time of this device. The simulated thermal response time (time until SO1 piezoresistors actually becomes 300°C) of three-Axis Accelerometer for high temperatures with ANSYS is about 600ms, and measured result with infrared temperature measurement systems is about 640ms. Experimental results using infrared thermal measurement systems agreed well with these theoretical results. As the results, if the electric 'power of about 260mW is supplied to the integrated micro-heaters being around room temperature, the threeAxis Accelerometer reached at 300°C within 90ms.
-
A three-Axis Accelerometer for high temperatures with low temperature dependence using a constant temperature control of SOI piezoresistors
The Sixteenth Annual International Conference on Micro Electro Mechanical Systems 2003. MEMS-03 Kyoto. IEEE, 2003Co-Authors: Hidekuni Takao, Kazuaki Sawada, Makoto IshidaAbstract:In this paper, a three-Axis Accelerometer for high temperatures using constant temperature control of SOI piezoresistors is proposed for reduction of temperature drift. The Accelerometer has surrounding mass structure, and piezoresistors for four wheatstone bridges to detect three-Axis acceleration. A temperature sensor using the whole resistance of four wheatstone bridges and micro-heaters are integrated on the beam structures. The structure of Accelerometer was optimized with finite element method simulation program, ANSYS. Temperature dependence of the fabricated three-Axis Accelerometer on variation of atmosphere temperature (room temperature to 300/spl deg/C) is much reduced by keeping the temperature of piezoresistors at 300/spl deg/C. Temperature Coefficient of Sensitivity (TCS) is much reduced to 72% of the original TCS.
-
Low temperature dependence three-Axis Accelerometer for high temperature environments with temperature control of SOI piezoresistors
Sensors and Actuators A-physical, 2003Co-Authors: Hidekuni Takao, Kazuaki Sawada, Makoto IshidaAbstract:Abstract In this paper, a three-Axis Accelerometer for high temperatures using constant temperature control of silicon on insulator (SOI) piezoresistors is proposed for reduction of temperature drift. The Accelerometer has surrounding mass structure, and piezoresistors for four wheatstone bridges to detect three-Axis acceleration. A temperature sensor using the whole resistance of four wheatstone bridges and micro-heaters are integrated on the beam structures. The structure of Accelerometer was optimized with finite element method (FEM) simulation program, ANSYS. The Accelerometer was fabricated with SOI wafers by bulk-micromachining. Temperature dependence of the fabricated three-Axis Accelerometer on variation of atmospheric temperature (from room temperature to 300 °C) is much reduced by keeping the temperature of piezoresistors at 300 °C. Temperature coefficient of sensitivity (TCS) is much reduced to 72% of the original TCS.
-
Analysis of Thermal Drift of A Constant Temperature Control Type Three-Axis Accelerometer for High Temperatures
IEEJ Transactions on Sensors and Micromachines, 2003Co-Authors: Hidekuni Takao, Kazuaki Sawada, Makoto IshidaAbstract:In this paper, a suppression method of generated distortion on the beam structures due to thermal stress is investigated for reduction of remainder thermal drift in three-Axis Accelerometer for high temperatures. An arrangement of piezoresistors for acceleration detection is presented to further reduction of thermal drift. Thermal drift analysis and design of advanced three-Axis Accelerometer for high temperatures without temperature dependence has been carried out with the finite element method (FEM) program, ANSYS. Experimental results agreed well with these theoretical results. Design considerations that enable the three-Axis Accelerometer to have stable sensitivity and offset are described with the simulated results.
-
A CMOS integrated three-Axis Accelerometer fabricated with commercial submicrometer CMOS technology and bulk-micromachining
IEEE Transactions on Electron Devices, 2001Co-Authors: Hidekuni Takao, H. Fukumoto, Makoto IshidaAbstract:In this paper, a bulk-micromachined three-Axis Accelerometer fabricated with commercial submicrometer CMOS wafers has been developed for low-cost realization of smart Accelerometers and improvement of device performance. The signal processing circuits for three-Axis detection were formed using a commercial 0.8-/spl mu/m CMOS technology. After that, micromachining processes were performed to the complete CMOS wafers to form Accelerometer structures. The important technologies to separate micromachining processes from the CMOS process are wafer thickness control after CMOS fabrication and backside polishing with chemical spin etching. Accelerometers with 3/spl times/3 mm/sup 2/ and 6/spl times/6 mm/sup 2/ die size were fabricated with the developed fabrication technology. As a result of device evaluation, 2.0 mg/sub rms/ resolution of Z-Axis acceleration, and 10.8 mg/sub rms/ resolution of X and Y-Axis acceleration were obtained by the Accelerometers with 6/spl times/6 mm/sup 2/ die size. Comparing for the same die area, the 6/spl times/6 mm/sup 2/ size Accelerometer showed about 21.3 times higher resolution of Z-Axis acceleration and 37.8 times higher resolution of X, Y-Axis acceleration as compared to our previous three-Axis Accelerometer fabricated with 5.0-/spl mu/m CMOS technology. Temperature dependence and reliability for repetitive vibration loads were also evaluated. Through these evaluations, basic performance of the CMOS integrated three-Axis Accelerometer has been confirmed.
Weileun Fang - One of the best experts on this subject based on the ideXlab platform.
-
Implementation of a monolithic single proof-mass tri-Axis Accelerometer using CMOS-MEMS technique
IEEE Transactions on Electron Devices, 2010Co-Authors: Chih-ming Sun, Yu Chia Liu, Ming-han Tsai, Weileun FangAbstract:This paper presents a novel single proof-mass tri-Axis capacitive type complementary metal oxide semiconductor- microelectromechanical system Accelerometer to reduce the foot- print of the chip. A serpentine out-of-plane (Z-Axis) spring is designed to reduce cross-Axis sensitivity. The tri-Axis accelerom- eter has been successfully implemented using the TSMC 2P4M process and in-house postprocessing. The die size of this ac- celerometer chip containing the MEMS structure and sensing circuits is 1.78 × 1.38 mm, a reduction of nearly 50% in chip size. Within the measurement range of 0.8 ∼ 6G, the tri-Axis Accelerometer sensitivities (nonlinearity) of each direction are 0.53 mV/G (2.64%) for the X-Axis, 0.28 mV/G (3.15%) for the Y-Axis, and 0.2 mV/G (3.36%) for the Z-Axis, respectively. In addition, the cross-Axis sensitivities of these three axes range from 1% to 8.3% for the same measurement range. The noise floors in each direction are 120 mG/rtHz for the X-Axis, 271 mG/rtHz for the Y-Axis, and 357 mG/rtHz for the Z-Axis.
-
A novel SOI-based single proof-mass 3-Axis Accelerometer with gap-closing differential capacitive electrodes in all sensing directions
SENSORS 2010 IEEE, 2010Co-Authors: Weileun FangAbstract:This study presents a novel capacitive-type single proof-mass 3-Axis Accelerometer implemented on SOI wafer. This Accelerometer contains special designed gap-closing differential sensing electrodes in all sensing directions. The present SOI-based 3-Axis Accelerometer has four merits, (1) the proof-mass is composed of device and handle layers of SOI wafer, (2) the sensitivity is improved by the gap-closing differential electrodes design in all sensing directions, (3) the sensing gap thickness is precisely defined by the box-oxide layer of SOI wafer, and (4) the poly-refilled via is used to implement the vertical interconnection between device layer and handle layer. In application, the single proof-mass 3-Axis Accelerometer is fabricated and characterized. The preliminary measurement results demonstrate the sensitivities of Accelerometer are 9.56mV/G (X-Axis), 6.9mV/G (Y-Axis) and 14.51mV/G (Z-Axis).
-
implementation of a gap closing differential capacitive sensing z Axis Accelerometer on an soi wafer
Journal of Micromechanics and Microengineering, 2009Co-Authors: Weileun FangAbstract:This study presents a novel capacitive-type Z-Axis (out-of-plane) Accelerometer implemented on an SOI wafer. This Accelerometer contains special designed gap-closing differential sensing electrodes. The present Z-Axis Accelerometer has four merits: (1) mass of the proof mass is increased by combining both device and handle silicon layers of the SOI wafer, (2) the sensitivity is improved by the gap-closing differential electrodes design, (3) the electrical interconnection between the device and handle silicon layers of the SOI wafer is available by means of the metal-vias, and (4) the sensing gap thickness is precisely defined by the buried-oxide layer of the SOI wafer. In application, the Z-Axis Accelerometer is fabricated and characterized. Typical measurement results demonstrate that the presented Z-Axis Accelerometer has a sensitivity of 196.3 mV G−1 (42.5 fF G−1) and a maximum nonlinearity of 2% over the range of 0.1–1 G.
-
A novel soi Z-Axis Accelerometer with gap closing differential sensing electrodes
TRANSDUCERS 2009 - 2009 International Solid-State Sensors Actuators and Microsystems Conference, 2009Co-Authors: Chia-pao Hsu, Ming-chuen Yip, Weileun FangAbstract:This study presents a novel capacitive-type Z-Axis (out-of-plane) Accelerometer implemented on SOI wafer. This Accelerometer contains special designed gap-closing differential sensing electrodes. The present Z-Axis Accelerometer has four merits, (1) mass of the proof mass is increased by combining both device and handle silicon layers of SOI wafer, (2) the sensitivity is improved by the gap-closing differential electrodes design, (3) the electrical interconnection between the device and handle silicon layers of SOI wafer is available by means of the metal-vias, (4) the sensing gap thickness is precisely defined by the buried-oxide layer of SOI wafer, and In application, the Z-Axis Accelerometer is fabricated and characterized. Typical measurement results demonstrate that the present Z-Axis Accelerometer has a sensitivity of 196.3mV/G, a non-linearity of 2% over the range of 1G acceleration, and a resolution of 0.01G.
Hidekuni Takao - One of the best experts on this subject based on the ideXlab platform.
-
IMPROVEMENT OF THERMAL RESPONSE IN TEMPERATURE CONTROLLED OVER A WIDE TEMPERATURE RANGE PRECISE THREE-Axis Accelerometer WITH STABlLIZED CHARACTERISTICS
2005Co-Authors: Hidekuni Takao, Kazuaki Sawada, Hee Don Seo, Makoto IshidaAbstract:In this paper, improvement of thermal response time of a temperature controlled three-Axis Accelerometer for high temperature environments with integrated microheaters and temperature sensors is presented. More detailed analysis of thermal response is carried out, and variation of thermal response with supply power energy is investigatcd using simplified finite element method (FEM) model based on thermal response analysis. Thermal response analysis of the devices is investigated with FEM program, ANSYS and infrared thermal measurement systems. And availability to application fields from a viewpoint about short thermal response time is discussed. In this paper, the time of three-Axis Accelerometer for high temperatures becoming 300°C by integrated micro-heaters and temperature sensors to reduce thermal drift characteristics was analyzed as a thermal response time of this device. The simulated thermal response time (time until SO1 piezoresistors actually becomes 300°C) of three-Axis Accelerometer for high temperatures with ANSYS is about 600ms, and measured result with infrared temperature measurement systems is about 640ms. Experimental results using infrared thermal measurement systems agreed well with these theoretical results. As the results, if the electric 'power of about 260mW is supplied to the integrated micro-heaters being around room temperature, the threeAxis Accelerometer reached at 300°C within 90ms.
-
A three-Axis Accelerometer for high temperatures with low temperature dependence using a constant temperature control of SOI piezoresistors
The Sixteenth Annual International Conference on Micro Electro Mechanical Systems 2003. MEMS-03 Kyoto. IEEE, 2003Co-Authors: Hidekuni Takao, Kazuaki Sawada, Makoto IshidaAbstract:In this paper, a three-Axis Accelerometer for high temperatures using constant temperature control of SOI piezoresistors is proposed for reduction of temperature drift. The Accelerometer has surrounding mass structure, and piezoresistors for four wheatstone bridges to detect three-Axis acceleration. A temperature sensor using the whole resistance of four wheatstone bridges and micro-heaters are integrated on the beam structures. The structure of Accelerometer was optimized with finite element method simulation program, ANSYS. Temperature dependence of the fabricated three-Axis Accelerometer on variation of atmosphere temperature (room temperature to 300/spl deg/C) is much reduced by keeping the temperature of piezoresistors at 300/spl deg/C. Temperature Coefficient of Sensitivity (TCS) is much reduced to 72% of the original TCS.
-
Low temperature dependence three-Axis Accelerometer for high temperature environments with temperature control of SOI piezoresistors
Sensors and Actuators A-physical, 2003Co-Authors: Hidekuni Takao, Kazuaki Sawada, Makoto IshidaAbstract:Abstract In this paper, a three-Axis Accelerometer for high temperatures using constant temperature control of silicon on insulator (SOI) piezoresistors is proposed for reduction of temperature drift. The Accelerometer has surrounding mass structure, and piezoresistors for four wheatstone bridges to detect three-Axis acceleration. A temperature sensor using the whole resistance of four wheatstone bridges and micro-heaters are integrated on the beam structures. The structure of Accelerometer was optimized with finite element method (FEM) simulation program, ANSYS. The Accelerometer was fabricated with SOI wafers by bulk-micromachining. Temperature dependence of the fabricated three-Axis Accelerometer on variation of atmospheric temperature (from room temperature to 300 °C) is much reduced by keeping the temperature of piezoresistors at 300 °C. Temperature coefficient of sensitivity (TCS) is much reduced to 72% of the original TCS.
-
Analysis of Thermal Drift of A Constant Temperature Control Type Three-Axis Accelerometer for High Temperatures
IEEJ Transactions on Sensors and Micromachines, 2003Co-Authors: Hidekuni Takao, Kazuaki Sawada, Makoto IshidaAbstract:In this paper, a suppression method of generated distortion on the beam structures due to thermal stress is investigated for reduction of remainder thermal drift in three-Axis Accelerometer for high temperatures. An arrangement of piezoresistors for acceleration detection is presented to further reduction of thermal drift. Thermal drift analysis and design of advanced three-Axis Accelerometer for high temperatures without temperature dependence has been carried out with the finite element method (FEM) program, ANSYS. Experimental results agreed well with these theoretical results. Design considerations that enable the three-Axis Accelerometer to have stable sensitivity and offset are described with the simulated results.
-
A CMOS integrated three-Axis Accelerometer fabricated with commercial submicrometer CMOS technology and bulk-micromachining
IEEE Transactions on Electron Devices, 2001Co-Authors: Hidekuni Takao, H. Fukumoto, Makoto IshidaAbstract:In this paper, a bulk-micromachined three-Axis Accelerometer fabricated with commercial submicrometer CMOS wafers has been developed for low-cost realization of smart Accelerometers and improvement of device performance. The signal processing circuits for three-Axis detection were formed using a commercial 0.8-/spl mu/m CMOS technology. After that, micromachining processes were performed to the complete CMOS wafers to form Accelerometer structures. The important technologies to separate micromachining processes from the CMOS process are wafer thickness control after CMOS fabrication and backside polishing with chemical spin etching. Accelerometers with 3/spl times/3 mm/sup 2/ and 6/spl times/6 mm/sup 2/ die size were fabricated with the developed fabrication technology. As a result of device evaluation, 2.0 mg/sub rms/ resolution of Z-Axis acceleration, and 10.8 mg/sub rms/ resolution of X and Y-Axis acceleration were obtained by the Accelerometers with 6/spl times/6 mm/sup 2/ die size. Comparing for the same die area, the 6/spl times/6 mm/sup 2/ size Accelerometer showed about 21.3 times higher resolution of Z-Axis acceleration and 37.8 times higher resolution of X, Y-Axis acceleration as compared to our previous three-Axis Accelerometer fabricated with 5.0-/spl mu/m CMOS technology. Temperature dependence and reliability for repetitive vibration loads were also evaluated. Through these evaluations, basic performance of the CMOS integrated three-Axis Accelerometer has been confirmed.
Jinliang Li - One of the best experts on this subject based on the ideXlab platform.
-
Theoretical research on a six-Axis Accelerometer for humanoid robot wrist
2009 International Conference on Mechatronics and Automation, 2009Co-Authors: Chunzhan Yu, Xinyi Zhang, Jinliang LiAbstract:The acceleration of humanoid robot wrist disturbed the grasp robustness of the multi-fingered robot hand. In order to acquire the acceleration, effectively counteract disturbance caused by the acceleration, and ensure robot hand grasping stably and accurately, the paper presented a novel sixAxis Accelerometer used parallel mechanism as the sensing element for humanoid robot wrist, established mathematics model, defined several important static characteristic indices-sensor isotropy and sensitivity indices, and analyzed the relationship between characteristic indices and the structural parameters of sensing element. According to the definition of the indices, the structural parameters were optimized by the performance atlases. In addition, taken into account other factors, the values of structural parameters were given for a six-Axis Accelerometer with optimum performance and more practical utilization. Finally, FEM simulation experimental results show that the novel six-Axis Accelerometer has the good dynamic characteristic for humanoid robot wrist.
Chih-ming Sun - One of the best experts on this subject based on the ideXlab platform.
-
Implementation of a monolithic single proof-mass tri-Axis Accelerometer using CMOS-MEMS technique
IEEE Transactions on Electron Devices, 2010Co-Authors: Chih-ming Sun, Yu Chia Liu, Ming-han Tsai, Weileun FangAbstract:This paper presents a novel single proof-mass tri-Axis capacitive type complementary metal oxide semiconductor- microelectromechanical system Accelerometer to reduce the foot- print of the chip. A serpentine out-of-plane (Z-Axis) spring is designed to reduce cross-Axis sensitivity. The tri-Axis accelerom- eter has been successfully implemented using the TSMC 2P4M process and in-house postprocessing. The die size of this ac- celerometer chip containing the MEMS structure and sensing circuits is 1.78 × 1.38 mm, a reduction of nearly 50% in chip size. Within the measurement range of 0.8 ∼ 6G, the tri-Axis Accelerometer sensitivities (nonlinearity) of each direction are 0.53 mV/G (2.64%) for the X-Axis, 0.28 mV/G (3.15%) for the Y-Axis, and 0.2 mV/G (3.36%) for the Z-Axis, respectively. In addition, the cross-Axis sensitivities of these three axes range from 1% to 8.3% for the same measurement range. The noise floors in each direction are 120 mG/rtHz for the X-Axis, 271 mG/rtHz for the Y-Axis, and 357 mG/rtHz for the Z-Axis.