The Experts below are selected from a list of 30759 Experts worldwide ranked by ideXlab platform
Hong Li - One of the best experts on this subject based on the ideXlab platform.
-
a junction temperature based pspice short circuit model of sic mosfet considering leakage current
Conference of the Industrial Electronics Society, 2019Co-Authors: Hong Li, Xingran Zhao, Yuting Wang, Zhe Zhou, Yunfei XuAbstract:In order to estimate the short-circuit capability of SiC MOSFET-based power converter, this paper proposes a behavioral model of SiC MOSFET that can be used for short-circuit simulation in PSpice, and the leakage current generated during short circuit is considered, which is an early warning of device failure. The short-circuit Characteristic of SiC MOSFET is discussed and analyzed, and a thermal model of case-to-junction is built to describe the junction temperature of SiC MOSFET during short-circuit condition. Based on the junction temperature information, the channel current model and leakage current model are established respectively. The simulation results show that the short-circuit model can correctly reflect the Static Characteristic and short-circuit Characteristic of SiC MOSFET. This circuit model can provide guidance for the design of short circuit protection circuit.
-
a non segmented pspice model of sic mosfet with temperature dependent parameters
IEEE Transactions on Power Electronics, 2019Co-Authors: Hong Li, Xingran Zhao, Zhengming Zhao, Trillion Q ZhengAbstract:A non-segmented PSpice model of silicon carbide metal-oxide semiconductor field effect transistor (SiC mosfet ) with temperature-dependent parameters is proposed in this paper, which can improve the model's convergence and temperature Characteristics. The non-segmented equations and the parameter-extraction method for the proposed SiC mosfet PSpice model are introduced first. Simulation and experiment results are given to verify the correctness of the model while considering the temperature-dependent parameters. The Static Characteristics of the model are verified by comparing the simulation curves with the Static Characteristic curves in the SiC mosfet 's datasheet, and its dynamic Characteristics are verified by comparing the simulation results with experimental results under different ambient temperatures (25, 75, and 125 °C) based on a double-pulse test platform. Moreover, the proposed non-segmented model, the conventional segmented model, and the model from the manufacturer are adopted and simulated in a full-bridge inverter. The simulation results show better convergence of the proposed non-segmented model. Therefore, an accurate and practical simulation model of SiC mosfet is provided for circuit design in this paper.
-
a non segmented pspice model of sic mosfets
Conference of the Industrial Electronics Society, 2017Co-Authors: Hong Li, Xingran ZhaoAbstract:To solve the simulation convergence problem of Silicon Carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) models, this paper proposes a non-segmented model for SiC MOSFETs, which uses non-segmented, smooth continuous equations to describe the Static and dynamic Characteristics of SiC MOSFET. Further, the Static Characteristic of SiC MOSFET obtained by the non-segmented model is verified by comparing the simulation curves with the Static curves provided in datasheet, and the dynamic Characteristic is verified by comparing the simulation rise time and fall time of voltage with the datasheet based on the double pulse simulation circuit. The accuracy and good convergence of non-segmented model provide a good way to research the power converters with SiC MOSFETs by simulation way.
-
nonsegmented pspice circuit model of gan hemt with simulation convergence consideration
IEEE Transactions on Industrial Electronics, 2017Co-Authors: Hong Li, Xingran Zhao, Wenzhe Su, Trillion Q ZhengAbstract:To solve the simulation convergence problem of enhancement mode gallium nitride high-electron mobility transistor (GaN HEMT) models, this paper proposes a nonsegmented model for GaN HEMT, which uses nonsegmented, smooth continuous equations to describe the Static and dynamic Characteristics of GaN HEMT. Furthermore, the Static Characteristic of GaN HEMT obtained by the nonsegmented model is verified by comparing the simulation curves with the Static curves provided in datasheet; and the dynamic Characteristic obtained by the nonsegmented model is verified by comparing the simulation result with the experimental result based on double pulse test platform. Moreover, to prove the good performance on simulation convergence of the proposed nonsegmented GaN HEMT model, the full-bridge dc–ac inverter with four GaN HEMTs has been employed as an example; the simulation result shows the good convergence of the inverter compared to the conventional segmented GaN HEMT model, which make it possible and flexible to research the power converters with GaN HEMTs by simulation way.
Trillion Q Zheng - One of the best experts on this subject based on the ideXlab platform.
-
a non segmented pspice model of sic mosfet with temperature dependent parameters
IEEE Transactions on Power Electronics, 2019Co-Authors: Hong Li, Xingran Zhao, Zhengming Zhao, Trillion Q ZhengAbstract:A non-segmented PSpice model of silicon carbide metal-oxide semiconductor field effect transistor (SiC mosfet ) with temperature-dependent parameters is proposed in this paper, which can improve the model's convergence and temperature Characteristics. The non-segmented equations and the parameter-extraction method for the proposed SiC mosfet PSpice model are introduced first. Simulation and experiment results are given to verify the correctness of the model while considering the temperature-dependent parameters. The Static Characteristics of the model are verified by comparing the simulation curves with the Static Characteristic curves in the SiC mosfet 's datasheet, and its dynamic Characteristics are verified by comparing the simulation results with experimental results under different ambient temperatures (25, 75, and 125 °C) based on a double-pulse test platform. Moreover, the proposed non-segmented model, the conventional segmented model, and the model from the manufacturer are adopted and simulated in a full-bridge inverter. The simulation results show better convergence of the proposed non-segmented model. Therefore, an accurate and practical simulation model of SiC mosfet is provided for circuit design in this paper.
-
nonsegmented pspice circuit model of gan hemt with simulation convergence consideration
IEEE Transactions on Industrial Electronics, 2017Co-Authors: Hong Li, Xingran Zhao, Wenzhe Su, Trillion Q ZhengAbstract:To solve the simulation convergence problem of enhancement mode gallium nitride high-electron mobility transistor (GaN HEMT) models, this paper proposes a nonsegmented model for GaN HEMT, which uses nonsegmented, smooth continuous equations to describe the Static and dynamic Characteristics of GaN HEMT. Furthermore, the Static Characteristic of GaN HEMT obtained by the nonsegmented model is verified by comparing the simulation curves with the Static curves provided in datasheet; and the dynamic Characteristic obtained by the nonsegmented model is verified by comparing the simulation result with the experimental result based on double pulse test platform. Moreover, to prove the good performance on simulation convergence of the proposed nonsegmented GaN HEMT model, the full-bridge dc–ac inverter with four GaN HEMTs has been employed as an example; the simulation result shows the good convergence of the inverter compared to the conventional segmented GaN HEMT model, which make it possible and flexible to research the power converters with GaN HEMTs by simulation way.
Xingran Zhao - One of the best experts on this subject based on the ideXlab platform.
-
a junction temperature based pspice short circuit model of sic mosfet considering leakage current
Conference of the Industrial Electronics Society, 2019Co-Authors: Hong Li, Xingran Zhao, Yuting Wang, Zhe Zhou, Yunfei XuAbstract:In order to estimate the short-circuit capability of SiC MOSFET-based power converter, this paper proposes a behavioral model of SiC MOSFET that can be used for short-circuit simulation in PSpice, and the leakage current generated during short circuit is considered, which is an early warning of device failure. The short-circuit Characteristic of SiC MOSFET is discussed and analyzed, and a thermal model of case-to-junction is built to describe the junction temperature of SiC MOSFET during short-circuit condition. Based on the junction temperature information, the channel current model and leakage current model are established respectively. The simulation results show that the short-circuit model can correctly reflect the Static Characteristic and short-circuit Characteristic of SiC MOSFET. This circuit model can provide guidance for the design of short circuit protection circuit.
-
a non segmented pspice model of sic mosfet with temperature dependent parameters
IEEE Transactions on Power Electronics, 2019Co-Authors: Hong Li, Xingran Zhao, Zhengming Zhao, Trillion Q ZhengAbstract:A non-segmented PSpice model of silicon carbide metal-oxide semiconductor field effect transistor (SiC mosfet ) with temperature-dependent parameters is proposed in this paper, which can improve the model's convergence and temperature Characteristics. The non-segmented equations and the parameter-extraction method for the proposed SiC mosfet PSpice model are introduced first. Simulation and experiment results are given to verify the correctness of the model while considering the temperature-dependent parameters. The Static Characteristics of the model are verified by comparing the simulation curves with the Static Characteristic curves in the SiC mosfet 's datasheet, and its dynamic Characteristics are verified by comparing the simulation results with experimental results under different ambient temperatures (25, 75, and 125 °C) based on a double-pulse test platform. Moreover, the proposed non-segmented model, the conventional segmented model, and the model from the manufacturer are adopted and simulated in a full-bridge inverter. The simulation results show better convergence of the proposed non-segmented model. Therefore, an accurate and practical simulation model of SiC mosfet is provided for circuit design in this paper.
-
a non segmented pspice model of sic mosfets
Conference of the Industrial Electronics Society, 2017Co-Authors: Hong Li, Xingran ZhaoAbstract:To solve the simulation convergence problem of Silicon Carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) models, this paper proposes a non-segmented model for SiC MOSFETs, which uses non-segmented, smooth continuous equations to describe the Static and dynamic Characteristics of SiC MOSFET. Further, the Static Characteristic of SiC MOSFET obtained by the non-segmented model is verified by comparing the simulation curves with the Static curves provided in datasheet, and the dynamic Characteristic is verified by comparing the simulation rise time and fall time of voltage with the datasheet based on the double pulse simulation circuit. The accuracy and good convergence of non-segmented model provide a good way to research the power converters with SiC MOSFETs by simulation way.
-
nonsegmented pspice circuit model of gan hemt with simulation convergence consideration
IEEE Transactions on Industrial Electronics, 2017Co-Authors: Hong Li, Xingran Zhao, Wenzhe Su, Trillion Q ZhengAbstract:To solve the simulation convergence problem of enhancement mode gallium nitride high-electron mobility transistor (GaN HEMT) models, this paper proposes a nonsegmented model for GaN HEMT, which uses nonsegmented, smooth continuous equations to describe the Static and dynamic Characteristics of GaN HEMT. Furthermore, the Static Characteristic of GaN HEMT obtained by the nonsegmented model is verified by comparing the simulation curves with the Static curves provided in datasheet; and the dynamic Characteristic obtained by the nonsegmented model is verified by comparing the simulation result with the experimental result based on double pulse test platform. Moreover, to prove the good performance on simulation convergence of the proposed nonsegmented GaN HEMT model, the full-bridge dc–ac inverter with four GaN HEMTs has been employed as an example; the simulation result shows the good convergence of the inverter compared to the conventional segmented GaN HEMT model, which make it possible and flexible to research the power converters with GaN HEMTs by simulation way.
Huoming Zhang - One of the best experts on this subject based on the ideXlab platform.
-
investigation on optimization design of an equivalent water depth truncated mooring system based on insga ii
Journal of Marine Science and Application, 2012Co-Authors: Huoming Zhang, Wenjun Gao, Qiang Wang, Juan Jiang, Zhou ZhaoAbstract:At present, equivalent water depth truncated mooring system optimization design is regarded as the priority of hybrid model testing for deep sea platforms, and will replace the full depth system test in the future. Compared with the full depth system, the working depth and span are smaller in the truncated one, and the other Characteristics maintain more consistency as well. In this paper, an inner turret moored floating production storage & offloading system (FPSO) which works at a water depth of 320m, was selected to be a research example while the truncated water depth was 80m. Furthermore, an improved non-dominated sorting genetic algorithm (INSGA-II) was selected to optimally calculate the equivalent water depth truncated system, considering the stress condition of the total mooring system in both the horizontal and vertical directions, as well as the Static Characteristic similarity of the representative single mooring line. The results of numerical calculations indicate that the mathematical model is feasible, and the optimization method is fast and effective.
-
investigation on optimization design of equivalent water depth truncated mooring system
Science China-physics Mechanics & Astronomy, 2009Co-Authors: Huoming Zhang, Jianmin YangAbstract:The oil industry is now increasingly concentrating their efforts and activities in connection with developing fields in deeper waters, ranging typically from 500 m to 3000 m worldwide. However, the modeling of a full-depth system has become difficult presently; no tank facility is sufficiently large to perform the testing of a complete FPS with compliant mooring in 1000 m to 3000 m depth, within reasonable limits of model scale. Until recently, the most feasible procedure to meet this challenge seems to be the so-called “hybrid model testing technique”. To implement this technique, the first and important step is to design the equivalent water depth truncated mooring system. In this work, the optimization design of the equivalent water depth truncated mooring system in hybrid model testing for deep sea platforms is investigated. During the research, the similarity of Static Characteristics between the truncated and full depth system is mainly considered. The optimization mathematical model for the equivalent water depth truncated system design is set up by using the similarity in numerical value of the Static Characteristics between the truncated system and the full depth one as the objective function. The dynamic Characteristic difference between the truncated and full depth mooring system can be minished by selecting proper design rule. To calculate the Static Characteristics of the mooring system, the fourth order Runge-Kutta method is used to solve the Static equilibrium equation of the single mooring line. After the Static Characteristic of the single mooring line is calculated, the Static Characteristic of the whole mooring system is calculated with Lagrange numerical interpolation method. The mooring line material database is established and the standard material name and the diameter of the mooring line are selected as the primary key. The improved simulated annealing algorithm for continual & discrete variables and the improved complex algorithm for discrete variables are employed to perform the optimization calculation. The C++ programming language is used to develop the computer program according to the object-oriented programming idea. To perform the optimization calculation with the two algorithms mentioned above respectively and the better result is selected as the final one. To examine the developed program, an example of equivalent water depth truncated mooring system optimum design calculation on a 100,000-t, turret mooring FPSO in water depth of 320 m are performed to obtain the conformation parameters of the truncated mooring system, in which the truncated water depth is 160 m. The model test under some typical environment conditions are performed for both the truncated and the full depth system with model scale factor λ=80. After comparing the corresponding results from the test of the truncated system with those from the full depth system test, it’s found that the truncated mooring system design in this work is successful.
Pablo Jenner Paredez Angeles - One of the best experts on this subject based on the ideXlab platform.
-
Estudo de tochas de plasma atraves da teoria da similaridade
2017Co-Authors: Pablo Jenner Paredez AngelesAbstract:Resumo: Nesta tese foram obtidas equações generalizadas para a característica tensão-corrente de umatocha de plasma de arco não transferido e de uma tocha de plasma de arco transferido, utilizando o método da Teoria da Similaridade. Para a tocha de arco não transferido, os dados experimentais foram obtidos para ar como gás plasmagênico e na faixa de correntes de 10 a 295 A. Para a tocha de arco transferido, os dados foram obtidos para argônio e faixa de correntes de 300 a 1500 A. A tocha de arco não transferido apresentou característica estática tensão-corrente descendente, enquanto a de arco transferido, a característica obtida foi dinâmica, com comportamento fortemente anômalo, com a presença de histerese, além de possuir ambos os ramos, o descendente e o ascendente. Os testes da tocha de arco transferido foram feitos num forno com paredes refratárias em atmosfera de argônio. Foram obtidas equações generalizadas tendo um, dois e três parâmetros adimensionais independentes, sendo a escolha da melhor equação generalizada baseada no coeficiente de correlação da regressão multilinear. O parâmetro adimensional da voltagem foi considerado como o parâmetro dependente. Em geral, para os parâmetros adimensionais independentes foram utilizados aqueles relacionados com as diversas modalidades de transferência da energia Joule do arco para outras modalidades de energia. Estas foram a convectiva, a radiativa, a turbulenta e a condutiva. As equações generalizadas obtidas para a tocha de arco não transferido apresentaram boa concordância para toda a faixa de dados experimentais. Já as equações para a tocha de arco transferido, devido à grande anomalia observada, foram limitadas à apenas a parte ascendente dos dados experimentais. O estudo experimental, realizado nesta tese pode contribuir para uma melhor compreensão dos fenômenos que ocorrem em tochas de plasma, como também, fornecer uma guia para a engenharia de projeto das tochasAbstract: In this thesis, generalized equations for the voltage-current Characteristics have been obtained for a non transferred arc plasma torch and for a transferred arc plasma torch, using the method of the Theory of the Similarity. For the non transferred arc plasma torch, the experimental data was obtained for air as the plasmagenic gas and for currents of 10 to 295 A. For the transferred arc torch, the experiments were carried out for argon and currents of 300 to 1500 A. The non transferred plasma torch showed a descending voltage-current Static Characteristic, while the transferred plasma torch, the Characteristic was dynamic, with strong anomalous behavior, consisting of the presence of hysteresis, besides possessing both the branches, the descendant and the ascendant. The tests of the transferred torch were carried out in an oven with refractory walls in argon atmosphere. Generalized equations had been obtained having one, two and three independent nondimensional parameters, being the choice of the best generalized equation based in the coefficient of correlation of the multilinear regression. The dimensionless parameter of the voltage was considered as the dependent parameter. In general, for the independent nondimensional parameters have been used those related with the diverse modalities of transference of the Joule energy of the arc to other modalities of energy. These had been the convective one, the radiative, the turbulent and the conductive one. The generalized equations obtained for the non transferred torch showed good agreement for all the range of experimental data. However, the equations for the transferred arc torch, due to their great observed anomaly, had been limited only to the ascending part of the experimental data. The experimental study, carried out in this thesis, might contribute to a better understanding of the phenomena taking place in plasma torches, as well, to provide a guide for their engineerin