The Experts below are selected from a list of 132 Experts worldwide ranked by ideXlab platform

Masaaki Yokoyama - One of the best experts on this subject based on the ideXlab platform.

  • LiF/Al Base Electrodes in Vertical Metal-Base Organic Transistors for Heat-Treatment-Free Process
    Japanese Journal of Applied Physics, 2010
    Co-Authors: Fumito Suzuki, Nakayama Kenichi, Masaaki Yokoyama, Junji Kido
    Abstract:

    Clear current modulation and current amplification were observed in vertical metal-Base organic transistors (MBOTs) without heat treatment in air that was previously essential. The devices, which use a LiF/Al Base electrode and a C60 layer under it, were prepared without heat treatment and showed a large current modulation exceeding 114.5 mA cm-2 and a current amplification factor of 51.7 at a collector Voltage of 5 V and a Base Voltage of 3 V. The LiF/Al Base electrode and the C60 layer under it were found to contribute to the increase in on current and to the decrease in off current, respectively.

  • high current and low Voltage operation of metal Base organic transistors with lif al emitter
    Applied Physics Letters, 2006
    Co-Authors: Kenichi Nakayama, Shinya Fujimoto, Masaaki Yokoyama
    Abstract:

    In order to improve the performance and clarify the operation mechanism of the vertical-type metal-Base organic transistor with a simple organic/metal/organic layered structure, the influence of the electron injection at the emitter electrode interface on modulation current has been investigated using the several emitter metal electrodes. The low injection barrier resulted in large modulation current. When a LiF∕Al emitter electrode was used for C60 organic semiconductor, this device achieved a high current modulation—exceeding 250mA∕cm2 for a low collector Voltage of 3.0V and a Base Voltage of 1.25V.

Nick Holonyak - One of the best experts on this subject based on the ideXlab platform.

  • intra cavity photon assisted tunneling collector Base Voltage mediated electron hole spontaneous stimulated recombination transistor laser
    Journal of Applied Physics, 2016
    Co-Authors: Milton Feng, Curtis Wang, Nick Holonyak
    Abstract:

    Optical absorption in a p-n junction diode for a direct-gap semiconductor can be enhanced by photon-assisted tunneling in the presence of a static or dynamic electrical field. In the transistor laser, the coherent photons generated at the Base quantum-well interact with the collector field and “assist” optical cavity electron tunneling from the valence band of the Base to the conduction band states of the collector. In the present work, we study the cavity coherent photon intensity effect on intra-cavity photon-assisted tunneling (ICPAT) in the transistor laser and realize photon-field enhanced optical absorption. This ICPAT in a transistor laser is the unique property of Voltage (field) modulation and the basis for ultrahigh speed direct laser modulation and switching.

R J Blaikie - One of the best experts on this subject based on the ideXlab platform.

  • experimental method to extract ac collector Base resistance from sige hbt s
    IEEE Transactions on Electron Devices, 1997
    Co-Authors: J S Hamel, R J Alison, R J Blaikie
    Abstract:

    A simple experimental technique is presented that enables the accurate extraction of the collector-Base resistance r/sub /spl mu// that models the impact of neutral Base recombination on the ac output resistance of bipolar transistors. Measurements of ratios of r/sub /spl mu// to the output resistance r/sub o/ arising from the Early effect for SiGe HBTs allows for the quantitative determination of the impact of neutral Base recombination on analog circuits that are designed to have a high output resistance. It is found that SiGe HBT structures indicative of those currently being used commercially in advanced analog processes exhibit neutral Base recombination that is significant enough to severely degrade the output resistance of analog circuits, even when the output transistors experience ac Base Voltage drive conditions. Finally, it is shown how extraction of the ratio of r/sub /spl mu// to r/sub o/ can be a useful tool to determine the impact of parasitic potential barriers formed by boron out-diffusion at the collector-Base junction on device and analog circuit performance.

Milton Feng - One of the best experts on this subject based on the ideXlab platform.

  • intra cavity photon assisted tunneling collector Base Voltage mediated electron hole spontaneous stimulated recombination transistor laser
    Journal of Applied Physics, 2016
    Co-Authors: Milton Feng, Curtis Wang, Nick Holonyak
    Abstract:

    Optical absorption in a p-n junction diode for a direct-gap semiconductor can be enhanced by photon-assisted tunneling in the presence of a static or dynamic electrical field. In the transistor laser, the coherent photons generated at the Base quantum-well interact with the collector field and “assist” optical cavity electron tunneling from the valence band of the Base to the conduction band states of the collector. In the present work, we study the cavity coherent photon intensity effect on intra-cavity photon-assisted tunneling (ICPAT) in the transistor laser and realize photon-field enhanced optical absorption. This ICPAT in a transistor laser is the unique property of Voltage (field) modulation and the basis for ultrahigh speed direct laser modulation and switching.

Chih-tang Sah - One of the best experts on this subject based on the ideXlab platform.

  • Lateral profiling of impurity surface concentration in submicron metal–oxide–silicon transistors
    Journal of Applied Physics, 2001
    Co-Authors: Yih Wang, Chih-tang Sah
    Abstract:

    Theory and line-shape analysis of carrier recombination current at interfacial electronic traps under a surface controlling gate in metal–oxide–silicon (MOS) structures is investigated using the Shockley–Read–Hall recombination statistics. The theoretical analysis demonstrates the sensitive dependence of the line shape of the peaked Basewell-terminal recombination current versus gate/Base Voltage (IB–VGB) characteristics on the lateral variation of the impurity concentration along the surface channel. An electrical measurement method is presented Based on this discovery for extracting the impurity surface concentration profile NIM(x=0, y, z) in the five regions (Basewell, drain and source junction and extension) covered by the gate conductor in submicron MOS transistors. Impurity surface concentration profiles in the Basewell channel region are then extracted by the analytical theory for MOS transistors fabricated by an advanced 0.13 μm complementary MOS technology. Effects of nitrogen in the gate oxide a...