The Experts below are selected from a list of 51144 Experts worldwide ranked by ideXlab platform
I I Novikov - One of the best experts on this subject based on the ideXlab platform.
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high power edge emitting laser diode with narrow vertical Beam Divergence
Electronics Letters, 2011Co-Authors: Nikolay N Ledentsov, M V Maximov, Yu M Shernyakov, I I Novikov, Yu N Gordeev, V A Shchuki, A S Pausov, K Posilovic, T Kettle, D ImbergAbstract:10.5 W pulsed optical power with ultra-narrow vertical Beam Divergence (full width at full maximum ∼1.1°) is achieved at 20 A pulsed current in a 1060 nm laser diode with as-cleaved facets (100 µm-wide and 3500 µm-long cavity). The lasing occurs through the tilted wave mode excited in the GaAs substrate. Temperature-stable operation at low threshold current densities is demonstrated.
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high power low Beam Divergence edge emitting semiconductor lasers with 1 and 2 d photonic bandgap crystal waveguide
IEEE Journal of Selected Topics in Quantum Electronics, 2008Co-Authors: M V Maximov, Yu M Shernyakov, I I Novikov, Ya L Karachinsky, Yu N Gordeev, A Sharo, V A Shchuki, U Enami, D Ortmanarbiv, Nikolay N LedentsovAbstract:We report on edge-emitting lasers based on the 1- and 2-D longitudinal photonic bandgap crystal concept. The longitudinal photonic bandgap crystal (PBC) design allows a robust and controllable extension of the fundamental mode over a thick multilayer waveguide to obtain a very large vertical mode spot size and a narrow vertical Beam Divergence.
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wavelength stabilized tilted wave lasers with a narrow vertical Beam Divergence
Semiconductor Science and Technology, 2008Co-Authors: I I Novikov, M V Maximov, Yu N Gordeev, V A Shchuki, Yu M Shernyakov, N A Kaluzhniy, S A Mintairov, V M Lantratov, A S Payusov, N N LedentsovAbstract:We studied laser diodes grown in the tilted wave geometry with cleaved facets. In this approach a cavity with the gain medium is coupled to the second cavity, while the phase matching of the modes of the two cavities results in the wavelength stabilization. The mode separation can be controlled by the tilt angle of the leaky wave emission and the thickness of the coupled cavity. In one case a ~100 µm thick transparent substrate with a polished and dielectric-coated back surface was used as a coupled waveguide. In the second case, a 10 µm thick GaAs layer followed by an InGaP evanescent reflector was applied. We observed an increase in the lasing mode wavelength spacing and the width of the vertical far-field lobes from ~0.7° to 5° (full width at half maximum, FWHM) with the reduction of the thickness of the coupled cavity, in agreement with expectations. The FWHM numbers correspond to the diffraction limit for 100 and 10 µm thick coupled waveguides, respectively. A high temperature stability of the lasing wavelengths (0.1 nm K−1) was revealed. The results indicate that a new generation of wavelength-stabilized lasers for applications requiring ultrahigh brightness and wavelength stabilization can be developed.
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high power single mode 1w continuous wave operation of longitudinal photonic band crystal lasers with a narrow vertical Beam Divergence
Applied Physics Letters, 2008Co-Authors: I I Novikov, M V Maximov, Yu N Gordeev, Yu M Shernyakov, Yu Yu Kiselev, P S Kopev, A Sharon, R Duboc, D B Arbiv, U BenamiAbstract:We report on 980nm InGaAs∕AlGaAs lasers with a broad waveguide based on a longitudinal photonic band crystal concept. The Beam Divergence measured as full width at half maximum was as narrow as 15W pulsed operation as limited by the current source. Significantly increased modal spot size enabled stable single lateral mode operation in broad ridge 10μm stripes. Maximum continuous wave power in single mode regime of 1.3W for 10μm wide stripe lasers was obtained, being limited by the catastrophic degradation of the unpassivated laser facets.
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high power gaas algaas lasers λ 850nm with ultranarrow vertical Beam Divergence
Applied Physics Letters, 2006Co-Authors: Ya L Karachinsky, M V Maximov, I I Novikov, S M Kuznetsov, Yu N Gordeev, Yu M Shernyakov, U Enami, P S Kopev, D B Arbiv, A SharoAbstract:The authors study 850nm GaAs∕AlGaAs longitudinal photonic band crystal lasers with a vertical far field Divergence of 9° (full width at half maximum). Differential quantum efficiency of 95% is achieved at a cavity length of 500μm. A total optical output power from broad area multimode devices was up to 6.3W and a maximum continuous wave single mode power from narrow stripe devices was 270mW.
M V Maximov - One of the best experts on this subject based on the ideXlab platform.
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high power edge emitting laser diode with narrow vertical Beam Divergence
Electronics Letters, 2011Co-Authors: Nikolay N Ledentsov, M V Maximov, Yu M Shernyakov, I I Novikov, Yu N Gordeev, V A Shchuki, A S Pausov, K Posilovic, T Kettle, D ImbergAbstract:10.5 W pulsed optical power with ultra-narrow vertical Beam Divergence (full width at full maximum ∼1.1°) is achieved at 20 A pulsed current in a 1060 nm laser diode with as-cleaved facets (100 µm-wide and 3500 µm-long cavity). The lasing occurs through the tilted wave mode excited in the GaAs substrate. Temperature-stable operation at low threshold current densities is demonstrated.
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high power low Beam Divergence edge emitting semiconductor lasers with 1 and 2 d photonic bandgap crystal waveguide
IEEE Journal of Selected Topics in Quantum Electronics, 2008Co-Authors: M V Maximov, Yu M Shernyakov, I I Novikov, Ya L Karachinsky, Yu N Gordeev, A Sharo, V A Shchuki, U Enami, D Ortmanarbiv, Nikolay N LedentsovAbstract:We report on edge-emitting lasers based on the 1- and 2-D longitudinal photonic bandgap crystal concept. The longitudinal photonic bandgap crystal (PBC) design allows a robust and controllable extension of the fundamental mode over a thick multilayer waveguide to obtain a very large vertical mode spot size and a narrow vertical Beam Divergence.
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wavelength stabilized tilted wave lasers with a narrow vertical Beam Divergence
Semiconductor Science and Technology, 2008Co-Authors: I I Novikov, M V Maximov, Yu N Gordeev, V A Shchuki, Yu M Shernyakov, N A Kaluzhniy, S A Mintairov, V M Lantratov, A S Payusov, N N LedentsovAbstract:We studied laser diodes grown in the tilted wave geometry with cleaved facets. In this approach a cavity with the gain medium is coupled to the second cavity, while the phase matching of the modes of the two cavities results in the wavelength stabilization. The mode separation can be controlled by the tilt angle of the leaky wave emission and the thickness of the coupled cavity. In one case a ~100 µm thick transparent substrate with a polished and dielectric-coated back surface was used as a coupled waveguide. In the second case, a 10 µm thick GaAs layer followed by an InGaP evanescent reflector was applied. We observed an increase in the lasing mode wavelength spacing and the width of the vertical far-field lobes from ~0.7° to 5° (full width at half maximum, FWHM) with the reduction of the thickness of the coupled cavity, in agreement with expectations. The FWHM numbers correspond to the diffraction limit for 100 and 10 µm thick coupled waveguides, respectively. A high temperature stability of the lasing wavelengths (0.1 nm K−1) was revealed. The results indicate that a new generation of wavelength-stabilized lasers for applications requiring ultrahigh brightness and wavelength stabilization can be developed.
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high power single mode 1w continuous wave operation of longitudinal photonic band crystal lasers with a narrow vertical Beam Divergence
Applied Physics Letters, 2008Co-Authors: I I Novikov, M V Maximov, Yu N Gordeev, Yu M Shernyakov, Yu Yu Kiselev, P S Kopev, A Sharon, R Duboc, D B Arbiv, U BenamiAbstract:We report on 980nm InGaAs∕AlGaAs lasers with a broad waveguide based on a longitudinal photonic band crystal concept. The Beam Divergence measured as full width at half maximum was as narrow as 15W pulsed operation as limited by the current source. Significantly increased modal spot size enabled stable single lateral mode operation in broad ridge 10μm stripes. Maximum continuous wave power in single mode regime of 1.3W for 10μm wide stripe lasers was obtained, being limited by the catastrophic degradation of the unpassivated laser facets.
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high power gaas algaas lasers λ 850nm with ultranarrow vertical Beam Divergence
Applied Physics Letters, 2006Co-Authors: Ya L Karachinsky, M V Maximov, I I Novikov, S M Kuznetsov, Yu N Gordeev, Yu M Shernyakov, U Enami, P S Kopev, D B Arbiv, A SharoAbstract:The authors study 850nm GaAs∕AlGaAs longitudinal photonic band crystal lasers with a vertical far field Divergence of 9° (full width at half maximum). Differential quantum efficiency of 95% is achieved at a cavity length of 500μm. A total optical output power from broad area multimode devices was up to 6.3W and a maximum continuous wave single mode power from narrow stripe devices was 270mW.
Yu N Gordeev - One of the best experts on this subject based on the ideXlab platform.
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high power edge emitting laser diode with narrow vertical Beam Divergence
Electronics Letters, 2011Co-Authors: Nikolay N Ledentsov, M V Maximov, Yu M Shernyakov, I I Novikov, Yu N Gordeev, V A Shchuki, A S Pausov, K Posilovic, T Kettle, D ImbergAbstract:10.5 W pulsed optical power with ultra-narrow vertical Beam Divergence (full width at full maximum ∼1.1°) is achieved at 20 A pulsed current in a 1060 nm laser diode with as-cleaved facets (100 µm-wide and 3500 µm-long cavity). The lasing occurs through the tilted wave mode excited in the GaAs substrate. Temperature-stable operation at low threshold current densities is demonstrated.
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high power low Beam Divergence edge emitting semiconductor lasers with 1 and 2 d photonic bandgap crystal waveguide
IEEE Journal of Selected Topics in Quantum Electronics, 2008Co-Authors: M V Maximov, Yu M Shernyakov, I I Novikov, Ya L Karachinsky, Yu N Gordeev, A Sharo, V A Shchuki, U Enami, D Ortmanarbiv, Nikolay N LedentsovAbstract:We report on edge-emitting lasers based on the 1- and 2-D longitudinal photonic bandgap crystal concept. The longitudinal photonic bandgap crystal (PBC) design allows a robust and controllable extension of the fundamental mode over a thick multilayer waveguide to obtain a very large vertical mode spot size and a narrow vertical Beam Divergence.
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wavelength stabilized tilted wave lasers with a narrow vertical Beam Divergence
Semiconductor Science and Technology, 2008Co-Authors: I I Novikov, M V Maximov, Yu N Gordeev, V A Shchuki, Yu M Shernyakov, N A Kaluzhniy, S A Mintairov, V M Lantratov, A S Payusov, N N LedentsovAbstract:We studied laser diodes grown in the tilted wave geometry with cleaved facets. In this approach a cavity with the gain medium is coupled to the second cavity, while the phase matching of the modes of the two cavities results in the wavelength stabilization. The mode separation can be controlled by the tilt angle of the leaky wave emission and the thickness of the coupled cavity. In one case a ~100 µm thick transparent substrate with a polished and dielectric-coated back surface was used as a coupled waveguide. In the second case, a 10 µm thick GaAs layer followed by an InGaP evanescent reflector was applied. We observed an increase in the lasing mode wavelength spacing and the width of the vertical far-field lobes from ~0.7° to 5° (full width at half maximum, FWHM) with the reduction of the thickness of the coupled cavity, in agreement with expectations. The FWHM numbers correspond to the diffraction limit for 100 and 10 µm thick coupled waveguides, respectively. A high temperature stability of the lasing wavelengths (0.1 nm K−1) was revealed. The results indicate that a new generation of wavelength-stabilized lasers for applications requiring ultrahigh brightness and wavelength stabilization can be developed.
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high power single mode 1w continuous wave operation of longitudinal photonic band crystal lasers with a narrow vertical Beam Divergence
Applied Physics Letters, 2008Co-Authors: I I Novikov, M V Maximov, Yu N Gordeev, Yu M Shernyakov, Yu Yu Kiselev, P S Kopev, A Sharon, R Duboc, D B Arbiv, U BenamiAbstract:We report on 980nm InGaAs∕AlGaAs lasers with a broad waveguide based on a longitudinal photonic band crystal concept. The Beam Divergence measured as full width at half maximum was as narrow as 15W pulsed operation as limited by the current source. Significantly increased modal spot size enabled stable single lateral mode operation in broad ridge 10μm stripes. Maximum continuous wave power in single mode regime of 1.3W for 10μm wide stripe lasers was obtained, being limited by the catastrophic degradation of the unpassivated laser facets.
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high power gaas algaas lasers λ 850nm with ultranarrow vertical Beam Divergence
Applied Physics Letters, 2006Co-Authors: Ya L Karachinsky, M V Maximov, I I Novikov, S M Kuznetsov, Yu N Gordeev, Yu M Shernyakov, U Enami, P S Kopev, D B Arbiv, A SharoAbstract:The authors study 850nm GaAs∕AlGaAs longitudinal photonic band crystal lasers with a vertical far field Divergence of 9° (full width at half maximum). Differential quantum efficiency of 95% is achieved at a cavity length of 500μm. A total optical output power from broad area multimode devices was up to 6.3W and a maximum continuous wave single mode power from narrow stripe devices was 270mW.
Wanhua Zheng - One of the best experts on this subject based on the ideXlab platform.
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photonic crystal diode laser array integrated with a phase shifter for narrow Beam Divergence
IEEE Photonics Technology Letters, 2018Co-Authors: Xuya Zhou, Shaoyu Zhao, Yufei Wang, Wanhua ZhengAbstract:A narrow far-field edge-emitting photonic crystal diode laser array integrated with a phase shifter emitting in the 980-nm range has been designed and fabricated. A phase shifter structure is integrated on the chip to convert the out-of-phase mode to the in-phase mode. The real effective-refractive-index difference produced by the phase shifter is measured according to the comparison of the experiment and the simulation results. The effects of phase shifters with different lengths on the near and far fields are investigated. With the phase and the amplitude modulation of the phase shifter, the out-of-phase mode is successfully converted to the in-phase mode. Thus, a single-lobe far-field pattern is achieved in the lateral direction. The far-field Divergence angles of the lateral and vertical directions are 1.5° and 12°, respectively. Such a device is promising for narrow far-field emission with a high output power.
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single mode holey vertical cavity surface emitting laser with ultra narrow Beam Divergence
Laser Physics Letters, 2010Co-Authors: Anji Liu, W Che, W J Zhou, M X Xing, Wanhua ZhengAbstract:We demonstrated oxide-confined 850-nm vertical-cavity surface-emitting lasers (VCSELs) with a two-dimensional petal-shaped holey structure composed of several annular-sector-shaped holes. Four types of devices with different hole numbers were designed and fabricated. The measured results showed that the larger hole number was beneficial to purifying the lasing mode, and realizing the single-mode operation. The side mode suppression ratio (SMSR) exceeded 30 dB throughout the entire drive current. Mode selective loss mechanism was used to explain the single-mode characteristic. The single-mode devices possessed good Beam profiles, and the lowest Divergence angle was as narrow as 3.2 degrees (full width at half maximum), attributed to the graded index profile and the shallow etching in the top distributed Bragg reflector (DBR).
Yu M Shernyakov - One of the best experts on this subject based on the ideXlab platform.
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wavelength stabilized tilted wave lasers with a narrow vertical Beam Divergence
Semiconductor Science and Technology, 2008Co-Authors: I I Novikov, M V Maximov, Yu N Gordeev, V A Shchuki, Yu M Shernyakov, N A Kaluzhniy, S A Mintairov, V M Lantratov, A S Payusov, N N LedentsovAbstract:We studied laser diodes grown in the tilted wave geometry with cleaved facets. In this approach a cavity with the gain medium is coupled to the second cavity, while the phase matching of the modes of the two cavities results in the wavelength stabilization. The mode separation can be controlled by the tilt angle of the leaky wave emission and the thickness of the coupled cavity. In one case a ~100 µm thick transparent substrate with a polished and dielectric-coated back surface was used as a coupled waveguide. In the second case, a 10 µm thick GaAs layer followed by an InGaP evanescent reflector was applied. We observed an increase in the lasing mode wavelength spacing and the width of the vertical far-field lobes from ~0.7° to 5° (full width at half maximum, FWHM) with the reduction of the thickness of the coupled cavity, in agreement with expectations. The FWHM numbers correspond to the diffraction limit for 100 and 10 µm thick coupled waveguides, respectively. A high temperature stability of the lasing wavelengths (0.1 nm K−1) was revealed. The results indicate that a new generation of wavelength-stabilized lasers for applications requiring ultrahigh brightness and wavelength stabilization can be developed.
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high power single mode 1w continuous wave operation of longitudinal photonic band crystal lasers with a narrow vertical Beam Divergence
Applied Physics Letters, 2008Co-Authors: I I Novikov, M V Maximov, Yu N Gordeev, Yu M Shernyakov, Yu Yu Kiselev, P S Kopev, A Sharon, R Duboc, D B Arbiv, U BenamiAbstract:We report on 980nm InGaAs∕AlGaAs lasers with a broad waveguide based on a longitudinal photonic band crystal concept. The Beam Divergence measured as full width at half maximum was as narrow as 15W pulsed operation as limited by the current source. Significantly increased modal spot size enabled stable single lateral mode operation in broad ridge 10μm stripes. Maximum continuous wave power in single mode regime of 1.3W for 10μm wide stripe lasers was obtained, being limited by the catastrophic degradation of the unpassivated laser facets.
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high power gaas algaas lasers λ 850nm with ultranarrow vertical Beam Divergence
Applied Physics Letters, 2006Co-Authors: Ya L Karachinsky, M V Maximov, I I Novikov, S M Kuznetsov, Yu N Gordeev, Yu M Shernyakov, U Enami, P S Kopev, D B Arbiv, A SharoAbstract:The authors study 850nm GaAs∕AlGaAs longitudinal photonic band crystal lasers with a vertical far field Divergence of 9° (full width at half maximum). Differential quantum efficiency of 95% is achieved at a cavity length of 500μm. A total optical output power from broad area multimode devices was up to 6.3W and a maximum continuous wave single mode power from narrow stripe devices was 270mW.
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single transverse mode 850 nm gaas algaas lasers with narrow Beam Divergence
Electronics Letters, 2006Co-Authors: T Kettle, M V Maximov, I I Novikov, S M Kuznetsov, Ya L Karachinsky, Yu N Gordeev, K Posilovic, O Schulz, Yu M Shernyakov, U EnamiAbstract:GaAs/AlGaAs 850 nm range lasers based on a longitudinal photonic bandgap crystal waveguide show narrow vertical far-field pattern. Vertical and lateral Beam Divergence with FWHM below 10deg and 5deg, respectively, is demonstrated for 4 mum stripe width, being independent on injection current. Excellent Beam quality with M 2 =1.4, low internal losses of 1.4 cm -1 and high differential quantum efficiency of 83% are observed
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narrow vertical Beam Divergence laser diode based on longitudinal photonic band crystal waveguide
Electronics Letters, 2003Co-Authors: M V Maximov, I I Novikov, V A Shchuki, Yu M Shernyakov, I Shamid, Nikolay N LedentsovAbstract:Narrow (<5°) vertical Beam Divergence is realised in an InGaAs–AlGaAs double-quantum well edge-emitting laser diode. A multilayer GaAs–AlGaAs structure was used as a waveguide, acting as a longitudinal photonic band crystal and enabling stable fundamental mode operation. Longitudinal mode grouping effect is observed in the lasing spectrum and attributed to the transverse cavity-induced hole-burning effect.
