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Beam Divergence

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I I Novikov – One of the best experts on this subject based on the ideXlab platform.

  • high power edge emitting laser diode with narrow vertical Beam Divergence
    Electronics Letters, 2011
    Co-Authors: Nikolay N Ledentsov, M V Maximov, Yu M Shernyakov, I I Novikov, Yu N Gordeev, V A Shchuki, A S Pausov, K Posilovic, T Kettle, D Imberg

    Abstract:

    10.5 W pulsed optical power with ultra-narrow vertical Beam Divergence (full width at full maximum ∼1.1°) is achieved at 20 A pulsed current in a 1060 nm laser diode with as-cleaved facets (100 µm-wide and 3500 µm-long cavity). The lasing occurs through the tilted wave mode excited in the GaAs substrate. Temperature-stable operation at low threshold current densities is demonstrated.

  • high power low Beam Divergence edge emitting semiconductor lasers with 1 and 2 d photonic bandgap crystal waveguide
    IEEE Journal of Selected Topics in Quantum Electronics, 2008
    Co-Authors: M V Maximov, A Sharo, Yu M Shernyakov, I I Novikov, Ya L Karachinsky, Yu N Gordeev, V A Shchuki, U Enami, D Ortmanarbiv, Nikolay N Ledentsov

    Abstract:

    We report on edge-emitting lasers based on the 1- and 2-D longitudinal photonic bandgap crystal concept. The longitudinal photonic bandgap crystal (PBC) design allows a robust and controllable extension of the fundamental mode over a thick multilayer waveguide to obtain a very large vertical mode spot size and a narrow vertical Beam Divergence.

  • wavelength stabilized tilted wave lasers with a narrow vertical Beam Divergence
    Semiconductor Science and Technology, 2008
    Co-Authors: I I Novikov, M V Maximov, Yu N Gordeev, V A Shchuki, Yu M Shernyakov, N A Kaluzhniy, S A Mintairov, V M Lantratov, A S Payusov, N N Ledentsov

    Abstract:

    We studied laser diodes grown in the tilted wave geometry with cleaved facets. In this approach a cavity with the gain medium is coupled to the second cavity, while the phase matching of the modes of the two cavities results in the wavelength stabilization. The mode separation can be controlled by the tilt angle of the leaky wave emission and the thickness of the coupled cavity. In one case a ~100 µm thick transparent substrate with a polished and dielectric-coated back surface was used as a coupled waveguide. In the second case, a 10 µm thick GaAs layer followed by an InGaP evanescent reflector was applied. We observed an increase in the lasing mode wavelength spacing and the width of the vertical far-field lobes from ~0.7° to 5° (full width at half maximum, FWHM) with the reduction of the thickness of the coupled cavity, in agreement with expectations. The FWHM numbers correspond to the diffraction limit for 100 and 10 µm thick coupled waveguides, respectively. A high temperature stability of the lasing wavelengths (0.1 nm K−1) was revealed. The results indicate that a new generation of wavelength-stabilized lasers for applications requiring ultrahigh brightness and wavelength stabilization can be developed.

M V Maximov – One of the best experts on this subject based on the ideXlab platform.

  • high power edge emitting laser diode with narrow vertical Beam Divergence
    Electronics Letters, 2011
    Co-Authors: Nikolay N Ledentsov, M V Maximov, Yu M Shernyakov, I I Novikov, Yu N Gordeev, V A Shchuki, A S Pausov, K Posilovic, T Kettle, D Imberg

    Abstract:

    10.5 W pulsed optical power with ultra-narrow vertical Beam Divergence (full width at full maximum ∼1.1°) is achieved at 20 A pulsed current in a 1060 nm laser diode with as-cleaved facets (100 µm-wide and 3500 µm-long cavity). The lasing occurs through the tilted wave mode excited in the GaAs substrate. Temperature-stable operation at low threshold current densities is demonstrated.

  • high power low Beam Divergence edge emitting semiconductor lasers with 1 and 2 d photonic bandgap crystal waveguide
    IEEE Journal of Selected Topics in Quantum Electronics, 2008
    Co-Authors: M V Maximov, A Sharo, Yu M Shernyakov, I I Novikov, Ya L Karachinsky, Yu N Gordeev, V A Shchuki, U Enami, D Ortmanarbiv, Nikolay N Ledentsov

    Abstract:

    We report on edge-emitting lasers based on the 1- and 2-D longitudinal photonic bandgap crystal concept. The longitudinal photonic bandgap crystal (PBC) design allows a robust and controllable extension of the fundamental mode over a thick multilayer waveguide to obtain a very large vertical mode spot size and a narrow vertical Beam Divergence.

  • wavelength stabilized tilted wave lasers with a narrow vertical Beam Divergence
    Semiconductor Science and Technology, 2008
    Co-Authors: I I Novikov, M V Maximov, Yu N Gordeev, V A Shchuki, Yu M Shernyakov, N A Kaluzhniy, S A Mintairov, V M Lantratov, A S Payusov, N N Ledentsov

    Abstract:

    We studied laser diodes grown in the tilted wave geometry with cleaved facets. In this approach a cavity with the gain medium is coupled to the second cavity, while the phase matching of the modes of the two cavities results in the wavelength stabilization. The mode separation can be controlled by the tilt angle of the leaky wave emission and the thickness of the coupled cavity. In one case a ~100 µm thick transparent substrate with a polished and dielectric-coated back surface was used as a coupled waveguide. In the second case, a 10 µm thick GaAs layer followed by an InGaP evanescent reflector was applied. We observed an increase in the lasing mode wavelength spacing and the width of the vertical far-field lobes from ~0.7° to 5° (full width at half maximum, FWHM) with the reduction of the thickness of the coupled cavity, in agreement with expectations. The FWHM numbers correspond to the diffraction limit for 100 and 10 µm thick coupled waveguides, respectively. A high temperature stability of the lasing wavelengths (0.1 nm K−1) was revealed. The results indicate that a new generation of wavelength-stabilized lasers for applications requiring ultrahigh brightness and wavelength stabilization can be developed.

Yu N Gordeev – One of the best experts on this subject based on the ideXlab platform.

  • high power edge emitting laser diode with narrow vertical Beam Divergence
    Electronics Letters, 2011
    Co-Authors: Nikolay N Ledentsov, M V Maximov, Yu M Shernyakov, I I Novikov, Yu N Gordeev, V A Shchuki, A S Pausov, K Posilovic, T Kettle, D Imberg

    Abstract:

    10.5 W pulsed optical power with ultra-narrow vertical Beam Divergence (full width at full maximum ∼1.1°) is achieved at 20 A pulsed current in a 1060 nm laser diode with as-cleaved facets (100 µm-wide and 3500 µm-long cavity). The lasing occurs through the tilted wave mode excited in the GaAs substrate. Temperature-stable operation at low threshold current densities is demonstrated.

  • high power low Beam Divergence edge emitting semiconductor lasers with 1 and 2 d photonic bandgap crystal waveguide
    IEEE Journal of Selected Topics in Quantum Electronics, 2008
    Co-Authors: M V Maximov, A Sharo, Yu M Shernyakov, I I Novikov, Ya L Karachinsky, Yu N Gordeev, V A Shchuki, U Enami, D Ortmanarbiv, Nikolay N Ledentsov

    Abstract:

    We report on edge-emitting lasers based on the 1- and 2-D longitudinal photonic bandgap crystal concept. The longitudinal photonic bandgap crystal (PBC) design allows a robust and controllable extension of the fundamental mode over a thick multilayer waveguide to obtain a very large vertical mode spot size and a narrow vertical Beam Divergence.

  • wavelength stabilized tilted wave lasers with a narrow vertical Beam Divergence
    Semiconductor Science and Technology, 2008
    Co-Authors: I I Novikov, M V Maximov, Yu N Gordeev, V A Shchuki, Yu M Shernyakov, N A Kaluzhniy, S A Mintairov, V M Lantratov, A S Payusov, N N Ledentsov

    Abstract:

    We studied laser diodes grown in the tilted wave geometry with cleaved facets. In this approach a cavity with the gain medium is coupled to the second cavity, while the phase matching of the modes of the two cavities results in the wavelength stabilization. The mode separation can be controlled by the tilt angle of the leaky wave emission and the thickness of the coupled cavity. In one case a ~100 µm thick transparent substrate with a polished and dielectric-coated back surface was used as a coupled waveguide. In the second case, a 10 µm thick GaAs layer followed by an InGaP evanescent reflector was applied. We observed an increase in the lasing mode wavelength spacing and the width of the vertical far-field lobes from ~0.7° to 5° (full width at half maximum, FWHM) with the reduction of the thickness of the coupled cavity, in agreement with expectations. The FWHM numbers correspond to the diffraction limit for 100 and 10 µm thick coupled waveguides, respectively. A high temperature stability of the lasing wavelengths (0.1 nm K−1) was revealed. The results indicate that a new generation of wavelength-stabilized lasers for applications requiring ultrahigh brightness and wavelength stabilization can be developed.