The Experts below are selected from a list of 195 Experts worldwide ranked by ideXlab platform

Yuelin Wang - One of the best experts on this subject based on the ideXlab platform.

  • design and fabrication of a mems capacitive accelerometer with fully symmetrical double sided h shaped beam Structure
    Microelectronic Engineering, 2015
    Co-Authors: Xiaofeng Zhou, Shenglin Liang, Xiaolin Li, Yuelin Wang
    Abstract:

    Display Omitted We design a MEMS capacitive accelerometer with fully symmetrical double-sided H-shaped beam.A simplified analytical model of the H-shaped Beam-Mass Structure and numerical simulations are presented.The fabrication process flow of accelerometer is presented in detail.Primary characterization of the accelerometers is performed. This paper presents a MEMS capacitive accelerometer with fully symmetrical double-sided H-shaped beam Structure. The fully symmetrical Structure is fabricated from a single double-device-layer SOI wafer, which has identical buried oxide layer and device layer on both sides of a thick handle layer. A large proof mass with through wafer thickness (560µm) is fabricated in this process. Two layers of single crystal silicon H-shaped beams with highly controllable dimension suspend the proof mass from both sides. The resonance frequency of the accelerometer is measured in open loop system by a network analyzer. The quality factor and the resonant frequency are 106 and 2.24kHz, respectively. The accelerometer with open loop interface circuit is calibrated on B&K Vibration Transducer Calibration System (Type 3629). The sensitivity of the device is 0.24V/g, and the nonlinearity is 0.29% over the range of 0-1g.

  • Design and fabrication of a micro-electromechanical system sandwich capacitive accelerometer
    The 9th IEEE International Conference on Nano Micro Engineered and Molecular Systems (NEMS), 2014
    Co-Authors: Xiaofeng Zhou, Xiaolin Li, Jian Wu, Yuelin Wang
    Abstract:

    This paper reports a micro-gravity MEMS sandwich capacitive accelerometer with symmetrical double-sided folded Beam-Mass Structure. The Beam-Mass Structure is fabricated from a single double-device-layer SOI wafer (D-SOI). The fabrication process produced proof mass with though wafer thickness (860μm) to enable formation of a larger proof mass. The suspension system of eight folded beams with highly controllable dimension suspends the proof mass from both sides. A sandwich differential capacitive accelerometer based on symmetrical double-sided folded beams-mass Structure is fabricated by three-layer silicon/silicon wafer direct bonding. The resonance frequency of the developed device is measured in an open-loop system by a network analyzer. The quality factor and the resonant frequency are 18 and 830Hz, respectively. The accelerometer has a closed-loop sensitivity of 1.8V/g and a nonlinearity of 0.52% over the range of 1g.

  • a novel sandwich capacitive accelerometer with a double sided 16 beam mass Structure
    Microelectronic Engineering, 2014
    Co-Authors: Wei Li, Zhaohui Song, Xiaolin Li, Yuelin Wang
    Abstract:

    A novel sandwich capacitive accelerometer with a double-sided, 16-Beam-Mass Structure is presented. In this design, the proof mass is supported by 16 tiny beams distributed uniformly on both sides, which aims to dramatically reduce the cross-axis response. Parameters of the Beam-Mass Structure are analyzed and optimized by analytical modeling and the finite element analysis (FEA) method. The micro-accelerometer is fabricated by bulk micromachining technology, and the proof mass and tiny beams are released by KOH anisotropic wet etching from both sides of the silicon wafer, simultaneously. The resonance frequency and the quality factor of the accelerometer are 4.34kHz and 311, respectively, which are measured in an open-loop system. The measurement results show that the accelerometer has a full-scale (FS) range of 30g, a close-loop sensitivity of 80mV/g, and a nonlinearity of 0.27% of FS. The cross-axis sensitivities are 0.353% (x/z axis) and 0.045% (y/z axis), respectively. The bias stability is 0.63mg for an hour. The accelerometer can withstand high shock of over 10,000g.

  • Fabrication of a MEMS capacitive accelerometer with symmetrical double-sided serpentine Beam-Mass Structure
    Microsystem Technologies-micro-and Nanosystems-information Storage and Processing Systems, 2013
    Co-Authors: Xiaofeng Zhou, Xiaolin Li, Jian Wu, Yuelin Wang
    Abstract:

    This paper presents a symmetrical double-sided serpentine Beam-Mass Structure design with a convenient and precise process of manufacturing MEMS accelerometers. The symmetrical double-sided serpentine Beam-Mass Structure is fabricated from a single double-device-layer SOI wafer, which has identical buried oxides and device layers on both sides of a thick handle layer. The fabrication process produced proof mass with though wafer thickness (860 μm) to enable formation of a larger proof mass. Two layers of single crystal silicon serpentine beams with highly controllable dimension suspend the proof mass from both sides. A sandwich differential capacitive accelerometer based on symmetrical double-sided serpentine beams-mass Structure is fabricated by three layer silicon/silicon wafer direct bonding. The resonance frequency of the accelerometer is measured in open loop system by a network analyzer. The quality factor and the resonant frequency are 14 and 724 Hz, respectively. The differential capacitance sensitivity of the fabricated accelerometer is 15 pF/g. The sensitivity of the device with close loop interface circuit is 2 V/g, and the nonlinearity is 0.6 % over the range of 0–1 g. The measured input referred noise floor of accelerometer with interface circuit is 2 μg/√Hz (0–250 Hz).

  • Fabrication of a MEMS capacitive accelerometer with symmetrical double-sided serpentine Beam-Mass Structure
    Microsystem Technologies-micro-and Nanosystems-information Storage and Processing Systems, 2013
    Co-Authors: Xiaofeng Zhou, Xiaolin Li, Jian Wu, Yuelin Wang
    Abstract:

    This paper presents a symmetrical double-sided serpentine Beam-Mass Structure design with a convenient and precise process of manufacturing MEMS accelerometers. The symmetrical double-sided serpentine Beam-Mass Structure is fabricated from a single double-device-layer SOI wafer, which has identical buried oxides and device layers on both sides of a thick handle layer. The fabrication process produced proof mass with though wafer thickness (860 μm) to enable formation of a larger proof mass. Two layers of single crystal silicon serpentine beams with highly controllable dimension suspend the proof mass from both sides. A sandwich differential capacitive accelerometer based on symmetrical double-sided serpentine beams-mass Structure is fabricated by three layer silicon/silicon wafer direct bonding. The resonance frequency of the accelerometer is measured in open loop system by a network analyzer. The quality factor and the resonant frequency are 14 and 724 Hz, respectively. The differential capacitance sensitivity of the fabricated accelerometer is 15 pF/g. The sensitivity of the device with close loop interface circuit is 2 V/g, and the nonlinearity is 0.6 % over the range of 0–1 g. The measured input referred noise floor of accelerometer with interface circuit is 2 μg/√Hz (0–250 Hz).

Xiaofeng Zhou - One of the best experts on this subject based on the ideXlab platform.

  • design and fabrication of a mems capacitive accelerometer with fully symmetrical double sided h shaped beam Structure
    Microelectronic Engineering, 2015
    Co-Authors: Xiaofeng Zhou, Shenglin Liang, Xiaolin Li, Yuelin Wang
    Abstract:

    Display Omitted We design a MEMS capacitive accelerometer with fully symmetrical double-sided H-shaped beam.A simplified analytical model of the H-shaped Beam-Mass Structure and numerical simulations are presented.The fabrication process flow of accelerometer is presented in detail.Primary characterization of the accelerometers is performed. This paper presents a MEMS capacitive accelerometer with fully symmetrical double-sided H-shaped beam Structure. The fully symmetrical Structure is fabricated from a single double-device-layer SOI wafer, which has identical buried oxide layer and device layer on both sides of a thick handle layer. A large proof mass with through wafer thickness (560µm) is fabricated in this process. Two layers of single crystal silicon H-shaped beams with highly controllable dimension suspend the proof mass from both sides. The resonance frequency of the accelerometer is measured in open loop system by a network analyzer. The quality factor and the resonant frequency are 106 and 2.24kHz, respectively. The accelerometer with open loop interface circuit is calibrated on B&K Vibration Transducer Calibration System (Type 3629). The sensitivity of the device is 0.24V/g, and the nonlinearity is 0.29% over the range of 0-1g.

  • Design and fabrication of a micro-electromechanical system sandwich capacitive accelerometer
    The 9th IEEE International Conference on Nano Micro Engineered and Molecular Systems (NEMS), 2014
    Co-Authors: Xiaofeng Zhou, Xiaolin Li, Jian Wu, Yuelin Wang
    Abstract:

    This paper reports a micro-gravity MEMS sandwich capacitive accelerometer with symmetrical double-sided folded Beam-Mass Structure. The Beam-Mass Structure is fabricated from a single double-device-layer SOI wafer (D-SOI). The fabrication process produced proof mass with though wafer thickness (860μm) to enable formation of a larger proof mass. The suspension system of eight folded beams with highly controllable dimension suspends the proof mass from both sides. A sandwich differential capacitive accelerometer based on symmetrical double-sided folded beams-mass Structure is fabricated by three-layer silicon/silicon wafer direct bonding. The resonance frequency of the developed device is measured in an open-loop system by a network analyzer. The quality factor and the resonant frequency are 18 and 830Hz, respectively. The accelerometer has a closed-loop sensitivity of 1.8V/g and a nonlinearity of 0.52% over the range of 1g.

  • Fabrication of a MEMS capacitive accelerometer with symmetrical double-sided serpentine Beam-Mass Structure
    Microsystem Technologies-micro-and Nanosystems-information Storage and Processing Systems, 2013
    Co-Authors: Xiaofeng Zhou, Xiaolin Li, Jian Wu, Yuelin Wang
    Abstract:

    This paper presents a symmetrical double-sided serpentine Beam-Mass Structure design with a convenient and precise process of manufacturing MEMS accelerometers. The symmetrical double-sided serpentine Beam-Mass Structure is fabricated from a single double-device-layer SOI wafer, which has identical buried oxides and device layers on both sides of a thick handle layer. The fabrication process produced proof mass with though wafer thickness (860 μm) to enable formation of a larger proof mass. Two layers of single crystal silicon serpentine beams with highly controllable dimension suspend the proof mass from both sides. A sandwich differential capacitive accelerometer based on symmetrical double-sided serpentine beams-mass Structure is fabricated by three layer silicon/silicon wafer direct bonding. The resonance frequency of the accelerometer is measured in open loop system by a network analyzer. The quality factor and the resonant frequency are 14 and 724 Hz, respectively. The differential capacitance sensitivity of the fabricated accelerometer is 15 pF/g. The sensitivity of the device with close loop interface circuit is 2 V/g, and the nonlinearity is 0.6 % over the range of 0–1 g. The measured input referred noise floor of accelerometer with interface circuit is 2 μg/√Hz (0–250 Hz).

  • Fabrication of a MEMS capacitive accelerometer with symmetrical double-sided serpentine Beam-Mass Structure
    Microsystem Technologies-micro-and Nanosystems-information Storage and Processing Systems, 2013
    Co-Authors: Xiaofeng Zhou, Xiaolin Li, Jian Wu, Yuelin Wang
    Abstract:

    This paper presents a symmetrical double-sided serpentine Beam-Mass Structure design with a convenient and precise process of manufacturing MEMS accelerometers. The symmetrical double-sided serpentine Beam-Mass Structure is fabricated from a single double-device-layer SOI wafer, which has identical buried oxides and device layers on both sides of a thick handle layer. The fabrication process produced proof mass with though wafer thickness (860 μm) to enable formation of a larger proof mass. Two layers of single crystal silicon serpentine beams with highly controllable dimension suspend the proof mass from both sides. A sandwich differential capacitive accelerometer based on symmetrical double-sided serpentine beams-mass Structure is fabricated by three layer silicon/silicon wafer direct bonding. The resonance frequency of the accelerometer is measured in open loop system by a network analyzer. The quality factor and the resonant frequency are 14 and 724 Hz, respectively. The differential capacitance sensitivity of the fabricated accelerometer is 15 pF/g. The sensitivity of the device with close loop interface circuit is 2 V/g, and the nonlinearity is 0.6 % over the range of 0–1 g. The measured input referred noise floor of accelerometer with interface circuit is 2 μg/√Hz (0–250 Hz).

  • a novel sandwich capacitive accelerometer with a symmetrical Structure fabricated from a d soi wafer
    Journal of Micromechanics and Microengineering, 2012
    Co-Authors: Xiaofeng Zhou, Xiaolin Li, Jian Wu, Yuelin Wang
    Abstract:

    This paper presents a novel sandwich capacitance accelerometer with a symmetrical double-sided Beam-Mass Structure. The symmetrical Beam-Mass Structure is fabricated from a double-device-layer silicon-on-insulate (D-SOI) wafer. The proof mass is suspended by eight beams at the corners on both sides. The beams are fabricated at the device layers of the SOI wafer; the cross-section of the beams is a standard trapezoid. The thickness of the beams can be well controlled because it is determined by the thickness of the device layer in the SOI wafer, and there is no dry etching process in the accelerometer fabrication. The resonance frequency of the developed accelerometer is measured in an open-loop system by a network analyzer. The quality factor and the resonant frequency are 18 and 812?Hz, respectively. The accelerometer has an opened-loop capacitance sensitivity of 8.7?pF g?1, a closed-loop sensitivity of 1.39?V?g?1 and a nonlinearity of 0.49% over the range of 1 g. The measured input, referred to as the noise floor of the accelerometers, with an interface circuit is 2.4??g (?Hz)?1?(0?100?Hz).

Shaoqun Shen - One of the best experts on this subject based on the ideXlab platform.

  • A novel bulk micromachined gyroscope based on a rectangular Beam-Mass Structure
    Sensors and Actuators A-physical, 2002
    Co-Authors: Heng Yang, Shaoqun Shen
    Abstract:

    Abstract Described in this paper is a micromachined vibratory gyroscope fabricated by combining anisotropic etching and deep reactive ion etching (DRIE) process. The basic Structure of the device is a cantilever Beam-Mass Structure. The cross section of the beam is rectangular. The gyroscope employs electrostatic driving and piezoresistive sensing. The gyroscope can operate in an atmospheric pressure environment due to the high quality factor in the sensing direction. Piezoresistive sensing avoids the difficulties caused by small capacitance detection. The packaging and testing costs can be reduced significantly. A novel operation mode of two-dimensional excitation and phase detection for vibratory gyroscopes is also proposed. The gyroscope is measured by both of the amplitude detection and phase detection. Experiment results show that the sensitivity for angular rate signal is about 11.45 μV/°/s/5 V in the range of −120–120°/s in an atmospheric pressure environment when the amplitude detection is used. The phase change is about 0.152°/°/s in the range of −120–120°/s when the phase detection is used.

  • Dual Beam-Mass Structure gyroscope micromachined by deep RIE process
    Proceedings of SPIE, 2000
    Co-Authors: Heng Yang, Shaoqun Shen
    Abstract:

    Described in this paper is a micromachined vibratory gyroscope fabricated by combining anisotropic etching and DRIE process. The gyro consists of two chips, the sensor chip and the bottom chip. Two identical cantilever Beam-Mass Structures are fabricated in the sensor chip and driving electrodes are made on the bottom chip. The Beam-Mass Structure has two vibration modes: the vertical vibration mode for driving and the lateral vibration mode for sensing. Piezoresistive sensing elements are made on the surface of the beams to monitor the vertical and the lateral vibration. Gyroscopes can be formed using a single Beam-Mass Structure or using two Beam-Mass Structures (the dual Beam-Mass gyroscope). The effect of acceleration can be rejected if a differential operation mode is used for a dual Beam-Mass gyroscope. The gyroscope can operate in an atmospheric pressure due to the high Q value in lateral vibration mode dominated by slide-film air damping. Piezoresistive sensing avoids the difficulties caused by small capacitance detection. The packaging and testing costs can be reduced significantly. Preliminary results for a working device with a single Beam-Mass Structure show that the sensitivity for angular rate signal is found to be about 15.6(mu) V/$DEG/sec/5V in an atmospheric pressure environment.© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

  • 100 composite beam Structure formed by masked-maskless etch of silicon
    Journal of Micromechanics and Microengineering, 1999
    Co-Authors: Heng Yang, Shaoqun Shen, Minhang Bao, Weiyuan Wang
    Abstract:

    A novel micromachined composite beam Structure has been designed and fabricated using the maskless anisotropic etching technology for 100 steps. The composite beam consists of two beam sections, a horizontal beam and a vertical beam, linked in series along the 100 direction. The composite beam is compliant in two orthogonal directions: the direction normal to the wafer due to the horizontal beam and the direction parallel with the wafer surface and perpendicular to the beam direction due to the vertical beam. The geometries of the two beam sections can be independently optimized through the process control. By attaching a mass to the end of the beam and integrating piezoresistive bridges on both beam sections, a composite Beam-Mass Structure sensitive to two acceleration components can be formed. This Structure can work as a rate gyroscope if the mass is electrostatically driven into vibration in the vertical direction and the Coliois force in the lateral direction is detected by a piezoresistive bridge. The principle, mask design and the process of the 100 masked-maskless etching for the composite beam Structure are described and the experimental results on acceleration sensitivities and angular rate are presented.

  • A micromachined piezoresistive angular rate sensor with a composite beam Structure
    Sensors and Actuators A: Physical, 1999
    Co-Authors: Minhang Bao, Heng Yang, Shaoqun Shen
    Abstract:

    Abstract Described in this paper is a bulk micromachined silicon angular rate sensor (gyroscope) with a novel composite cantilever Beam-Mass Structure. The novel composite cantilever Beam-Mass Structure consists of a section of horizontal beam and a section of vertical beam. Two sections are joined in series to form a composite beam with the end of the horizontal beam clamped to a frame and a mass attached to the free end of the vertical beam. As the Structure has two orthogonal vibration directions, a gyroscope can be constructed if the Beam-Mass Structure is driven to a vertical vibration by an electrostatic force by an electrode underneath the mass. Piezoresistive sensing elements are made on the beams' surface to monitor the driving vibration and to sense the vibration caused by Coriolis force induced by angular rate. The horizontal beam is fabricated by using a novel masked–maskless etching technology developed by the authors. The theoretical analyses, the design and the process for the rate sensor are described. The output signal of the piezoresistive bridge is around 0.22 μV/(°/s) under a driving of 6 V AC with a DC bias of 15 V. The gyroscope has the advantages of operating in an atmospheric pressure environment and the ability of self-compensation for the temperature coefficient of piezoresistance.

  • Composite cantilever Beam-Mass Structure gyroscope by a novel etching technology
    Proceedings of SPIE, 1998
    Co-Authors: Xinxin Li, Shaoqun Shen, Heng Yang, Weiyuan Wang
    Abstract:

    Described in this paper are a novel composite Beam-Mass Structure and a micro gyroscope based on the Structure. The composite beam consists of two sections: a section of vertical beam with a cross-section vertical to the wafer surface and a section of horizontal beam near the wafer surface. As the two sections have two orthogonal compliant directions, the Structure has two orthogonal vibration modes: a vertical vibration mode decided by the horizontal beam and a lateral vibration mode decided by the vertical beam. Therefore, a vibratory gyroscope can be developed by this composite beam Structure with a mass attached. As the composite beam is a multilevel Structure that can hardly be fabricated by a conventional anisotropic etching technology, a novel 'maskless etching' technology for vertical steps has been developed for the Structure. Piezoresistive bridges on the surfaces of the horizontal and the vertical beams are used to monitor the driving vibration and to sense the output signal. Testing shows that the sensitivity from the piezoresistive bridge is 0.22 (mu) V/(degrees/sec) under a 6V AC driving with a DC bias. The special advantage of the sensor is the ability of working in an atmospheric environment.

Xiaolin Li - One of the best experts on this subject based on the ideXlab platform.

  • design and fabrication of a mems capacitive accelerometer with fully symmetrical double sided h shaped beam Structure
    Microelectronic Engineering, 2015
    Co-Authors: Xiaofeng Zhou, Shenglin Liang, Xiaolin Li, Yuelin Wang
    Abstract:

    Display Omitted We design a MEMS capacitive accelerometer with fully symmetrical double-sided H-shaped beam.A simplified analytical model of the H-shaped Beam-Mass Structure and numerical simulations are presented.The fabrication process flow of accelerometer is presented in detail.Primary characterization of the accelerometers is performed. This paper presents a MEMS capacitive accelerometer with fully symmetrical double-sided H-shaped beam Structure. The fully symmetrical Structure is fabricated from a single double-device-layer SOI wafer, which has identical buried oxide layer and device layer on both sides of a thick handle layer. A large proof mass with through wafer thickness (560µm) is fabricated in this process. Two layers of single crystal silicon H-shaped beams with highly controllable dimension suspend the proof mass from both sides. The resonance frequency of the accelerometer is measured in open loop system by a network analyzer. The quality factor and the resonant frequency are 106 and 2.24kHz, respectively. The accelerometer with open loop interface circuit is calibrated on B&K Vibration Transducer Calibration System (Type 3629). The sensitivity of the device is 0.24V/g, and the nonlinearity is 0.29% over the range of 0-1g.

  • Design and fabrication of a micro-electromechanical system sandwich capacitive accelerometer
    The 9th IEEE International Conference on Nano Micro Engineered and Molecular Systems (NEMS), 2014
    Co-Authors: Xiaofeng Zhou, Xiaolin Li, Jian Wu, Yuelin Wang
    Abstract:

    This paper reports a micro-gravity MEMS sandwich capacitive accelerometer with symmetrical double-sided folded Beam-Mass Structure. The Beam-Mass Structure is fabricated from a single double-device-layer SOI wafer (D-SOI). The fabrication process produced proof mass with though wafer thickness (860μm) to enable formation of a larger proof mass. The suspension system of eight folded beams with highly controllable dimension suspends the proof mass from both sides. A sandwich differential capacitive accelerometer based on symmetrical double-sided folded beams-mass Structure is fabricated by three-layer silicon/silicon wafer direct bonding. The resonance frequency of the developed device is measured in an open-loop system by a network analyzer. The quality factor and the resonant frequency are 18 and 830Hz, respectively. The accelerometer has a closed-loop sensitivity of 1.8V/g and a nonlinearity of 0.52% over the range of 1g.

  • a novel sandwich capacitive accelerometer with a double sided 16 beam mass Structure
    Microelectronic Engineering, 2014
    Co-Authors: Wei Li, Zhaohui Song, Xiaolin Li, Yuelin Wang
    Abstract:

    A novel sandwich capacitive accelerometer with a double-sided, 16-Beam-Mass Structure is presented. In this design, the proof mass is supported by 16 tiny beams distributed uniformly on both sides, which aims to dramatically reduce the cross-axis response. Parameters of the Beam-Mass Structure are analyzed and optimized by analytical modeling and the finite element analysis (FEA) method. The micro-accelerometer is fabricated by bulk micromachining technology, and the proof mass and tiny beams are released by KOH anisotropic wet etching from both sides of the silicon wafer, simultaneously. The resonance frequency and the quality factor of the accelerometer are 4.34kHz and 311, respectively, which are measured in an open-loop system. The measurement results show that the accelerometer has a full-scale (FS) range of 30g, a close-loop sensitivity of 80mV/g, and a nonlinearity of 0.27% of FS. The cross-axis sensitivities are 0.353% (x/z axis) and 0.045% (y/z axis), respectively. The bias stability is 0.63mg for an hour. The accelerometer can withstand high shock of over 10,000g.

  • Fabrication of a MEMS capacitive accelerometer with symmetrical double-sided serpentine Beam-Mass Structure
    Microsystem Technologies-micro-and Nanosystems-information Storage and Processing Systems, 2013
    Co-Authors: Xiaofeng Zhou, Xiaolin Li, Jian Wu, Yuelin Wang
    Abstract:

    This paper presents a symmetrical double-sided serpentine Beam-Mass Structure design with a convenient and precise process of manufacturing MEMS accelerometers. The symmetrical double-sided serpentine Beam-Mass Structure is fabricated from a single double-device-layer SOI wafer, which has identical buried oxides and device layers on both sides of a thick handle layer. The fabrication process produced proof mass with though wafer thickness (860 μm) to enable formation of a larger proof mass. Two layers of single crystal silicon serpentine beams with highly controllable dimension suspend the proof mass from both sides. A sandwich differential capacitive accelerometer based on symmetrical double-sided serpentine beams-mass Structure is fabricated by three layer silicon/silicon wafer direct bonding. The resonance frequency of the accelerometer is measured in open loop system by a network analyzer. The quality factor and the resonant frequency are 14 and 724 Hz, respectively. The differential capacitance sensitivity of the fabricated accelerometer is 15 pF/g. The sensitivity of the device with close loop interface circuit is 2 V/g, and the nonlinearity is 0.6 % over the range of 0–1 g. The measured input referred noise floor of accelerometer with interface circuit is 2 μg/√Hz (0–250 Hz).

  • Fabrication of a MEMS capacitive accelerometer with symmetrical double-sided serpentine Beam-Mass Structure
    Microsystem Technologies-micro-and Nanosystems-information Storage and Processing Systems, 2013
    Co-Authors: Xiaofeng Zhou, Xiaolin Li, Jian Wu, Yuelin Wang
    Abstract:

    This paper presents a symmetrical double-sided serpentine Beam-Mass Structure design with a convenient and precise process of manufacturing MEMS accelerometers. The symmetrical double-sided serpentine Beam-Mass Structure is fabricated from a single double-device-layer SOI wafer, which has identical buried oxides and device layers on both sides of a thick handle layer. The fabrication process produced proof mass with though wafer thickness (860 μm) to enable formation of a larger proof mass. Two layers of single crystal silicon serpentine beams with highly controllable dimension suspend the proof mass from both sides. A sandwich differential capacitive accelerometer based on symmetrical double-sided serpentine beams-mass Structure is fabricated by three layer silicon/silicon wafer direct bonding. The resonance frequency of the accelerometer is measured in open loop system by a network analyzer. The quality factor and the resonant frequency are 14 and 724 Hz, respectively. The differential capacitance sensitivity of the fabricated accelerometer is 15 pF/g. The sensitivity of the device with close loop interface circuit is 2 V/g, and the nonlinearity is 0.6 % over the range of 0–1 g. The measured input referred noise floor of accelerometer with interface circuit is 2 μg/√Hz (0–250 Hz).

Bin Xiong - One of the best experts on this subject based on the ideXlab platform.

  • a novel capacitive accelerometer with a highly symmetrical double sided beam mass Structure
    Sensors and Actuators A-physical, 2012
    Co-Authors: Xiaofeng Zhou, Xiaolin Li, Jian Wu, Bin Xiong, Yuelin Wang
    Abstract:

    This paper reports a novel capacitive accelerometer with highly symmetrical double-sided Beam-Mass Structure. The highly symmetrical Structure is fabricated from single wafer by a novel vertical sidewall protection technique. The good device performance i

  • single wafer fabrication of a symmetric double sided beam mass Structure using drie and wet etching by a novel vertical sidewall protection technique
    Journal of Micromechanics and Microengineering, 2010
    Co-Authors: Xiaofeng Zhou, Bin Xiong, Yuelin Wang, Zuankai Wang
    Abstract:

    A symmetric double-sided beam–mass Structure is of interest for the design of novel MEMS sensors and actuators. Conventional methods to achieve symmetric beam–mass Structures have been heavily dependent on bonding or heavy boron doping, which is costly or can notoriously lead to undesirable residual stress as well. In this paper, we report on a novel vertical sidewall protection technique to fabricate symmetric double-sided beam–mass Structures (also beams) at a single-wafer level without the need for bonding or doping-based etching, by cleverly taking advantage of the fact that self-stop etching will occur at {1 1 1} planes. Moreover, the thickness of the beams is only determined by the depth of dry etching (deep reactive ion etching, DRIE), which excludes the strict dependence on wafer thickness and precise etching time control. We believe that this simple yet powerful technique would open an avenue to fabricate symmetric double-sided Structures for various applications.

  • Single wafer fabrication of a symmetric double-sided beam–mass Structure using DRIE and wet etching by a novel vertical sidewall protection technique
    Journal of Micromechanics and Microengineering, 2010
    Co-Authors: Xiaofeng Zhou, Bin Xiong, Yuelin Wang, Lufeng Che, Kebin Fan, Zuankai Wang
    Abstract:

    A symmetric double-sided beam–mass Structure is of interest for the design of novel MEMS sensors and actuators. Conventional methods to achieve symmetric beam–mass Structures have been heavily dependent on bonding or heavy boron doping, which is costly or can notoriously lead to undesirable residual stress as well. In this paper, we report on a novel vertical sidewall protection technique to fabricate symmetric double-sided beam–mass Structures (also beams) at a single-wafer level without the need for bonding or doping-based etching, by cleverly taking advantage of the fact that self-stop etching will occur at {1 1 1} planes. Moreover, the thickness of the beams is only determined by the depth of dry etching (deep reactive ion etching, DRIE), which excludes the strict dependence on wafer thickness and precise etching time control. We believe that this simple yet powerful technique would open an avenue to fabricate symmetric double-sided Structures for various applications.

  • a novel capacitive accelerometer with an eight beam mass Structure by self stop anisotropic etching of 1 0 0 silicon
    Journal of Micromechanics and Microengineering, 2008
    Co-Authors: Fei Xiao, Xiaofeng Zhou, Bin Xiong, Yuelin Wang, Yufang Li
    Abstract:

    This paper reports a novel capacitive sandwich accelerometer with an eight-Beam-Mass Structure fabricated by self-stop anisotropic wet etching of (1 0 0) silicon and wafer-level Si–Si bonding. In this Structure, eight straight beams symmetrically connect to the corners of the proof mass on both sides. These suspension beams are formed by self-stop anisotropic wet etching of (1 0 0) silicon, without heavy boron doping or Si–Si bonding. Through this beam-fabrication approach, the beam thickness can be well controlled and intrinsic stress in the beams is minimized. Accelerometers with different sensitivities can be easily fabricated by varying the thickness of the beams without making any change to the masks. For a device with 17 µm thick beams, the resonance frequency and the quality factor are 696 Hz and 47, respectively. The accelerometer has a sensitivity of 0.35 V g−1.

  • A new symmetrical Beam-Mass Structure for accelerometers by anisotropic etching without convex corner compensation
    2008 3rd IEEE International Conference on Nano Micro Engineered and Molecular Systems, 2008
    Co-Authors: Fei Xiao, Bin Xiong, Yuelin Wang
    Abstract:

    This paper reports a new symmetrical Beam-Mass Structure for sandwich capacitive accelerometers. The single-wafer fabrication of the symmetrical double-sided Beam-Mass Structure in which eight straight beams are connected to the corners of the proof mass is accomplished only by anisotropic wet etching of a (100) wafer without convex corner compensation. Different measuring-range accelerometers can be got by controlling the thickness of the spring beam. A packaged sensor with 140 mum beam thickness is measured by a dropping hammer system. The sensitivity is 58 muV/g for a 5000 g shock acceleration under 5 V power supply.