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Junyan Zhang - One of the best experts on this subject based on the ideXlab platform.

  • the effect of applied substrate negative Bias Voltage on the structure and properties of al containing a c h thin films
    Surface & Coatings Technology, 2008
    Co-Authors: Peng Wang, Youming Chen, Guangan Zhang, Pengxun Yan, Junying Zhang, Liping Wang, Junyan Zhang
    Abstract:

    Abstract Al-containing hydrogenated amorphous carbon (Al-C:H) films were prepared using a magnetron sputtering Al target in the CH 4 and Ar mixture atmosphere with various applied substrate pulse negative Bias Voltages. The hydrogen content and internal stress of the film decrease dramatically with the substrate pulse Bias Voltage increase. However, the hardness values of the films keep at high level (∼ 20 GPa) without any obvious changes with the increase of the applied substrate pulse Bias Voltages. The Al-C:H film prepared at applied substrate high Bias Voltage shows a long wear life and low friction coefficient.

  • the effect of applied negative Bias Voltage on the structure of ti doped a c h films deposited by fcva
    Applied Surface Science, 2007
    Co-Authors: Peng Wang, Xia Wang, Youming Chen, Guangan Zhang, Weimin Liu, Junyan Zhang
    Abstract:

    Abstract Ti-doped hydrogenated diamond-like carbon (DLC) films were deposited on Si(1 0 0) substrates by a filtered cathodic vacuum arc (FCVA) method using Ar and CH 4 as the feedstock. The composition and microstructure of the films were investigated by Raman spectroscopy, X-ray photoelectron spectroscopy and IR spectroscopy. The internal stress was determined by the radius of curvature technique. The influence of the Bias Voltage on the microstructure of the as-deposited films was investigated. It was found that the graphite-like bonds was dominated in the Ti-doped DLC film deposited at 0 V Bias Voltage. When Bias Voltage was increased to −150 V, more diamond-like bond were produced and the sp 3 content in film reached the maximum value, after which it decreased and more graphite-like bonds feature produced with further increase of the negative Bias Voltage. The compressive internal in the Ti-doped DLC films also exhibited a maximum value at −150 V Bias Voltage. IR results indicated that C H bonded intensity reduced, and H atoms bonded with C atoms were substituted for the Ti atoms as the negative Bias Voltage increasing. All the composition and microstructure change can be explained by considering the plasma conditions and the effect of negative Bias Voltage applied to the substrate.

Minoru Isshiki - One of the best experts on this subject based on the ideXlab platform.

  • Influence of Substrate Bias Voltage on the Impurity Concentrations in Hf Films Deposited by Ion Beam Deposition Method
    2020
    Co-Authors: Joon Woo Bae, Kouji Mimura, Jae-won Lim, Minoru Isshiki
    Abstract:

    Hf films have been deposited on Si(100) substrate with or without a substrate Bias Voltage using a non-mass separated ion beam deposition (IBD) method. Secondary ion mass spectrometry (SIMS) and glow discharge mass spectrometry (GDMS) have been used to determine impurity concentrations of Hf films and a Hf target. By the SIMS results with Cs þ and O 2 þ ion beams, the Hf film deposited at V s ¼ 0 V contains more impurities than the Hf film deposited at V s ¼ À50 V. In addition, from GDMS results for the Hf target and the Hf films deposited at V s ¼ 0 and À50 V, almost all the impurities have reduced by applying a negative substrate Bias Voltage. It means that applying a negative Bias Voltage to the substrate can decrease the impurity concentrations in Hf films

  • influence of substrate Bias Voltage on properties of pt thin films deposited by non mass separated ion beam deposition method
    Materials Letters, 2009
    Co-Authors: Kouji Mimura, Masahito Uchikoshi, Mitsuhiro Wada, Makoto Ikeda, Minoru Isshiki
    Abstract:

    Abstract Pt thin films were deposited on Si substrates by applying a negative substrate Bias Voltage using a non-mass separated ion beam deposition method. The effect of the substrate Bias Voltage on the properties of the deposited films was investigated. In the case of Pt thin films deposited without the substrate Bias Voltage, a columnar structure and small grains were observed. The electrical resistivity of the deposited Pt films was very high (49.3 ± 0.65 µΩ cm). By increasing the substrate Bias Voltage, no clear columnar structure was observed. At the substrate Bias Voltage of − 75 V, the resistivity of the Pt film showed a minimum value of 16.9 ± 0.2 µΩ cm closed to the value of bulk (10.6 µΩ cm).

  • effect of substrate Bias Voltage on the purity of cu films deposited by non mass separated ion beam deposition
    Thin Solid Films, 2003
    Co-Authors: Kouji Mimura, Kiyoshi Miyake, M. Yamashita, Minoru Isshiki
    Abstract:

    Abstract Cu films were deposited on Si (1 0 0) substrates at room temperature by a non-mass separated ion beam deposition method. The effect of the negative substrate Bias Voltage on the property of the Cu films was investigated by using field emission scanning electron microscopy and secondary ion mass spectroscopy. The Cu film deposited at the negative Bias Voltage of −50 V showed an extremely fine and homogeneous morphology without a columnar structure. The purity of the Cu film deposited at the Bias Voltage of −50 V was much improved in comparison with the 6N Cu target, while the Cu film deposited without applying substrate Bias Voltage contained more impurities than the 6N Cu target.

  • effect of substrate Bias Voltage on the thermal stability of cu ta si structures deposited by ion beam deposition
    Japanese Journal of Applied Physics, 2003
    Co-Authors: Jae-won Lim, Kouji Mimura, Kiyoshi Miyake, M. Yamashita, Minoru Isshiki
    Abstract:

    The interfacial reactions of the Cu (100 nm)/Ta (50 nm)/Si structures and their relationship with the microstructure of Ta diffusion barrier are investigated. Ta films were deposited on Si (100) substrates using a non-mass separated ion beam deposition system at various Bias Voltages ranging from 0 to -200 V. An optimum applied substrate Bias Voltage of -125 V was found to yield a dominant α-Ta film with a noncolumnar structure, low electrical resistivity (about 40 µΩcm) and smooth surface. A Ta diffusion barrier which was deposited at the optimum Bias Voltage prevented Cu–Si interaction up to 600°C for 60 min in flowing purified H2, whereas a Ta layer with a columnar structure, deposited at zero Bias Voltage, degraded at 300°C. Two different reactions of the Cu/Ta (0 V)/Si and the Cu/Ta (-125 V)/Si structures concerning the thermal stability were investigated and discussed on the basis of the experimental results.

Guangan Zhang - One of the best experts on this subject based on the ideXlab platform.

  • the effect of applied substrate negative Bias Voltage on the structure and properties of al containing a c h thin films
    Surface & Coatings Technology, 2008
    Co-Authors: Peng Wang, Youming Chen, Guangan Zhang, Pengxun Yan, Junying Zhang, Liping Wang, Junyan Zhang
    Abstract:

    Abstract Al-containing hydrogenated amorphous carbon (Al-C:H) films were prepared using a magnetron sputtering Al target in the CH 4 and Ar mixture atmosphere with various applied substrate pulse negative Bias Voltages. The hydrogen content and internal stress of the film decrease dramatically with the substrate pulse Bias Voltage increase. However, the hardness values of the films keep at high level (∼ 20 GPa) without any obvious changes with the increase of the applied substrate pulse Bias Voltages. The Al-C:H film prepared at applied substrate high Bias Voltage shows a long wear life and low friction coefficient.

  • the effect of applied negative Bias Voltage on the structure of ti doped a c h films deposited by fcva
    Applied Surface Science, 2007
    Co-Authors: Peng Wang, Xia Wang, Youming Chen, Guangan Zhang, Weimin Liu, Junyan Zhang
    Abstract:

    Abstract Ti-doped hydrogenated diamond-like carbon (DLC) films were deposited on Si(1 0 0) substrates by a filtered cathodic vacuum arc (FCVA) method using Ar and CH 4 as the feedstock. The composition and microstructure of the films were investigated by Raman spectroscopy, X-ray photoelectron spectroscopy and IR spectroscopy. The internal stress was determined by the radius of curvature technique. The influence of the Bias Voltage on the microstructure of the as-deposited films was investigated. It was found that the graphite-like bonds was dominated in the Ti-doped DLC film deposited at 0 V Bias Voltage. When Bias Voltage was increased to −150 V, more diamond-like bond were produced and the sp 3 content in film reached the maximum value, after which it decreased and more graphite-like bonds feature produced with further increase of the negative Bias Voltage. The compressive internal in the Ti-doped DLC films also exhibited a maximum value at −150 V Bias Voltage. IR results indicated that C H bonded intensity reduced, and H atoms bonded with C atoms were substituted for the Ti atoms as the negative Bias Voltage increasing. All the composition and microstructure change can be explained by considering the plasma conditions and the effect of negative Bias Voltage applied to the substrate.

Pham Van Vinh - One of the best experts on this subject based on the ideXlab platform.

  • effect of cathode arc current and Bias Voltage on the mechanical properties of cralsin thin films
    Surface & Coatings Technology, 2008
    Co-Authors: Pham Van Vinh
    Abstract:

    Abstract Thin films of CrAlSiN were deposited on SKD 11 tool steel substrate using Cr and AlSi cathodes by a cathodic arc plasma deposition system. The influence of AlSi cathode arc current and Bias Voltage on the mechanical and the structural properties of the films were investigated. The CrAlSiN films have a multilayered structure in which the nano-crystalline CrN layers alternate with nano-amorphous AlSiN layers. The hardness of the film increased with the increase of aluminum-silicon cathode arc current from 35 A to 50 A. Further increases in the current decreased the hardness. The maximum hardness of 42 GPa was obtained at the current of 50 A. The hardness of the film increased with the increase of the Bias Voltage up to − 100 V. Further increases in the Bias Voltage decreased the hardness of the films. The period of the film decreased with the increase of the Bias Voltage. The maximum hardness was observed with the films deposited at the Bias Voltage of − 100 V.

Ghaffarian Mehdi - One of the best experts on this subject based on the ideXlab platform.

  • Bias-Voltage-Induced Topological Phase Transition in Finite Size Quantum Spin Hall Systems in the Presence of a Transverse Electric Field
    'Elsevier BV', 2021
    Co-Authors: Baradaran Alireza, Ghaffarian Mehdi
    Abstract:

    Using the tight-binding BHZ model and Landauer-B\"uttiker formalism, the topological invariant of the finite width of ribbons of HgTe/CdTe quantum well is studied in the absence and presence of an external transverse electric field. It will be recognized that a critical current changes topological invariant of ribbons of quantum well. This topological phase transition, which occurred by adjustment of the Bias Voltage, depends on the width of the sample and the gate Voltage. The profound effects of an external transverse electric field are considered to the separation of spin-up and spin-down band structures, decreasing band gap and tuning the topological phase transition between ordinary and quantum spin Hall regime. These declares the transverse electric field amplifies the quantum spin Hall regime and causes inducing the topological phase transition in ribbons of quantum well. Our finding may instantly clear some practical aspects of the study in the field of spintronic for employment in spin-based devices.Comment: 21 pages, 8 figure

  • Bias-Voltage-induced Topological Phase Transition in Finite Size Quantum Spin Hall Systems in the Presence of a Transverse Electric Field
    'Elsevier BV', 2020
    Co-Authors: Baradaran Alireza, Ghaffarian Mehdi
    Abstract:

    Using the tight-binding BHZ model and Landauer-B\"uttiker formalism, the topological invariant of the finite width of HgTe/CdTe quantum well ribbons is considered in the absence and presence of an external transverse electric field. It will be recognized that a critical current changes topological invariant of quantum well ribbons. This topological phase transition, which occurred by adjustment of the Bias Voltage, depends on the width of the sample and the gate Voltage. The profound effect of an external transverse electric field is considered to the separation of spin-up and spin-down band structures, decreasing band gap and tuning the topological phase transition between ordinary and quantum spin Hall regime. This declares the transverse electric field amplifies the quantum spin Hall regime and causes inducing the topological phase transition in quantum well ribbons. Our finding may clear instantly some practical aspects of the study in the field of spintronic for employment in spin-based devices.Comment: 21 pages, 8 figure