The Experts below are selected from a list of 2886 Experts worldwide ranked by ideXlab platform

Jianhui Zhang - One of the best experts on this subject based on the ideXlab platform.

  • Implantation-Free 4H-SiC Bipolar Junction Transistors With Double Base Epilayers
    IEEE Electron Device Letters, 2008
    Co-Authors: Jianhui Zhang, Xueqing Li, Petre Alexandrov, Terry Burke, Jian H. Zhao
    Abstract:

    This letter reports the first 4H-SiC power Bipolar Junction Transistor (BJT) with double base epilayers which is completely free of ion implantation and hence of implantation-induced crystal damages and high-temperature activation annealing-induced surface roughness. Based on this novel design and implantation-free process, a 4H-SiC BJT was fabricated to reach an open base collector-to-emitter blocking voltage of over 1300 V, with a common-emitter current gain up to 31. Improvements on reliability have also been observed, including less forward voltage drift (< 2%) and no significant degradation on current gain in the active region.

  • demonstration of first 9 2 kv 4h sic Bipolar Junction Transistor
    Electronics Letters, 2004
    Co-Authors: Jianhui Zhang, J H Zhao, P Alexandrov, T Burke
    Abstract:

    The first demonstration is reported of a high-voltage (9.2 kV) 4H-SiC Bipolar Junction Transistor (BJT) based on a 50 µm, 7×1014 cm−3 doped drift layer, achieving an emitter current density of 150 A/cm2 at VCEO=5 V, suggesting a specific on-resistance (RSP_ON) of 33 mΩ cm2 without considering current spreading or 49 mΩ cm2 if current spreading is considered. The result far exceeds the previous 4H-SiC BJT record of 3.2 kV with RSP_ON=78 mΩ cm2.

  • a high current gain 4h sic npn power Bipolar Junction Transistor
    IEEE Electron Device Letters, 2003
    Co-Authors: Jianhui Zhang, P Alexandrov, L Fursin, J H Zhao
    Abstract:

    This work reports the development of high power 4H-SiC Bipolar Junction Transistors (BJTs) by using reduced implantation dose for p+ base contact region and annealing in nitric oxide of base-to-emitter Junction passivation oxide for 2 hours at 1150/spl deg/C. The Transistor blocks larger than 480 V and conducts 2.1 A (J/sub c/=239 A/cm/sup 2/) at V/sub ce/=3.4 V, corresponding to a specific on-resistance (R/sub sp on/) of 14 m/spl Omega/cm/sup 2/, based on a drift layer design of 12 /spl mu/m doped to 6/spl times/10/sup 15/cm/sup -3/. Current gain /spl beta//spl ges/35 has been achieved for collector current densities ranging from J/sub c/=40 A/cm/sup 2/ to 239 A/cm/sup 2/ (I/sub c/=2.1 A) with a peak current gain of 38 at J/sub c/=114 A/cm/sup 2/.

Jia Wang - One of the best experts on this subject based on the ideXlab platform.

  • high gain gated lateral power Bipolar Junction Transistor
    IEEE Electron Device Letters, 2021
    Co-Authors: Jia Wang, Yahong Xie, Hiroshi Amano
    Abstract:

    We demonstrated a prototype Gated Lateral power Bipolar Junction Transistor (GLP-BJT) on wide bandgap semiconductor. The device combined the intrinsic advantages of high current gain of a Gated Lateral-BJT and good current handling and voltage blocking capabilities of GaN material. As a result, the common-emitter current gain remained over 300 at a high collector current density of 2 kA/cm2 despite a wide ${p}$ -base region of $2~\mu \text{m}$ . The open base breakdown voltage BVCEO was over 300 V corresponding to a high critical field of 2.5 MV/cm. These figures of merit show great promise of GaN-based GLP-BJT in power applications and also shed light on the development of state-of-the-art Bipolar Transistors based on other wide bandgap semiconductors.

  • the 4h sic npn power Bipolar Junction Transistor
    Semiconductor Science and Technology, 1999
    Co-Authors: Jia Wang, B W Williams
    Abstract:

    The static and dynamic performance of the power silicon carbide BJT is investigated and compared with the silicon carbide UMOSFET by employing a numerical semiconductor simulator. The silicon carbide BJT exhibits superior current handling ability to and switching speed comparable with the SiC MOSFET in the voltage range simulated (1 kV-4 kV). The high current gain of the SiC BJT redresses the base drive problem of the silicon power BJT. It is proposed that research be carried out on the power silicon carbide NPN BJT, since it does not have the premature gate oxide breakdown and low inversion layer mobility problems associated with SiC MOSFET technology.

J H Zhao - One of the best experts on this subject based on the ideXlab platform.

  • demonstration of first 9 2 kv 4h sic Bipolar Junction Transistor
    Electronics Letters, 2004
    Co-Authors: Jianhui Zhang, J H Zhao, P Alexandrov, T Burke
    Abstract:

    The first demonstration is reported of a high-voltage (9.2 kV) 4H-SiC Bipolar Junction Transistor (BJT) based on a 50 µm, 7×1014 cm−3 doped drift layer, achieving an emitter current density of 150 A/cm2 at VCEO=5 V, suggesting a specific on-resistance (RSP_ON) of 33 mΩ cm2 without considering current spreading or 49 mΩ cm2 if current spreading is considered. The result far exceeds the previous 4H-SiC BJT record of 3.2 kV with RSP_ON=78 mΩ cm2.

  • a high current gain 4h sic npn power Bipolar Junction Transistor
    IEEE Electron Device Letters, 2003
    Co-Authors: Jianhui Zhang, P Alexandrov, L Fursin, J H Zhao
    Abstract:

    This work reports the development of high power 4H-SiC Bipolar Junction Transistors (BJTs) by using reduced implantation dose for p+ base contact region and annealing in nitric oxide of base-to-emitter Junction passivation oxide for 2 hours at 1150/spl deg/C. The Transistor blocks larger than 480 V and conducts 2.1 A (J/sub c/=239 A/cm/sup 2/) at V/sub ce/=3.4 V, corresponding to a specific on-resistance (R/sub sp on/) of 14 m/spl Omega/cm/sup 2/, based on a drift layer design of 12 /spl mu/m doped to 6/spl times/10/sup 15/cm/sup -3/. Current gain /spl beta//spl ges/35 has been achieved for collector current densities ranging from J/sub c/=40 A/cm/sup 2/ to 239 A/cm/sup 2/ (I/sub c/=2.1 A) with a peak current gain of 38 at J/sub c/=114 A/cm/sup 2/.

Anant K Agarwal - One of the best experts on this subject based on the ideXlab platform.

  • comparison of static and switching characteristics of 1200 v 4h sic bjt and 1200 v si igbt
    IEEE Industry Applications Society Annual Meeting, 2006
    Co-Authors: Yan Gao, Alex Q. Huang, Sumi Krishnaswami, Jim Richmond, Anant K Agarwal
    Abstract:

    In this paper, static and switching characteristics of a 1200 V 4H-silicon carbide (SiC) Bipolar Junction Transistor (BJT) at a bus voltage of 600 V are reported for the first time. Comparison was made between the SiC BJT and a 1200 V Si insulated gate Bipolar Transistor (IGBT). The experimental data show that the SiC BJT has much smaller conduction and switching losses than the Si IGBT. The SiC BJT also shows an extremely large reverse bias safe operation area, and no second breakdown was observed. This removes one of the most unattractive aspects of the BJT. The results prove that, unlike Si BJTs, BJTs in 4H-SiC are good competitors for Si IGBTs.

  • fast switch off of high voltage 4h sic npn Bipolar Junction Transistor from deep saturation regime
    Solid-state Electronics, 2004
    Co-Authors: Michael E Levinshtein, Anant K Agarwal, Pavel Ivanov, John W Palmour
    Abstract:

    Abstract It has been demonstrated experimentally that the switch-off time of a high-voltage power (1.8 kV, 3.8 A) 4H–SiC Bipolar Junction Transistor in the deep-saturation mode can be decreased from 200 to 25 ns by using an appropriate switch-off base signal. In such conditions, the switch-off time in the common-emitter configuration can be shorter than the switch-on time.

  • sic power switching devices the second electronics revolution
    Proceedings of the IEEE, 2002
    Co-Authors: J A Cooper, Anant K Agarwal
    Abstract:

    Silicon carbide (SiC) offers significant advantages for power-switching devices because the critical field for avalanche breakdown is about ten times higher than in silicon. SiC power devices have made remarkable progress in the past five years, demonstrating currents in excess of 100 A and blocking voltages in excess of 19000 V. In this paper we describe the latest progress in three classes of SiC devices: diodes (p-i-n and Schottky), Transistors (Junction field-effect Transistor, metal-oxide-semiconductor field-effect Transistor, and Bipolar Junction Transistor), and thyristors (gate turn-off).

B W Williams - One of the best experts on this subject based on the ideXlab platform.

  • the 4h sic npn power Bipolar Junction Transistor
    Semiconductor Science and Technology, 1999
    Co-Authors: Jia Wang, B W Williams
    Abstract:

    The static and dynamic performance of the power silicon carbide BJT is investigated and compared with the silicon carbide UMOSFET by employing a numerical semiconductor simulator. The silicon carbide BJT exhibits superior current handling ability to and switching speed comparable with the SiC MOSFET in the voltage range simulated (1 kV-4 kV). The high current gain of the SiC BJT redresses the base drive problem of the silicon power BJT. It is proposed that research be carried out on the power silicon carbide NPN BJT, since it does not have the premature gate oxide breakdown and low inversion layer mobility problems associated with SiC MOSFET technology.