The Experts below are selected from a list of 300 Experts worldwide ranked by ideXlab platform

D Ritter - One of the best experts on this subject based on the ideXlab platform.

  • Resistive Switching in $\hbox{HfO}_{2}$ Probed by a Metal–Insulator–Semiconductor Bipolar Transistor
    IEEE Electron Device Letters, 2012
    Co-Authors: E. Yalon, A. Gavrilov, S. Cohen, D. Mistele, B. Meyler, J. Salzman, D Ritter
    Abstract:

    Resistive switching in thin HfO2 films is studied using a metal-insulator-semiconductor Bipolar Transistor structure. Using this structure, electron injection into the semiconductor valence band can be distinguished from injection into the conduction band. In addition, the p-n junction serves as a sensitive detector of damage induced by the switching effect. The implications of the obtained experimental results on the validity of various conduction mechanisms through the insulator are discussed.

  • resistive switching in hbox hfo _ 2 probed by a metal insulator semiconductor Bipolar Transistor
    IEEE Electron Device Letters, 2012
    Co-Authors: E. Yalon, A. Gavrilov, S. Cohen, D. Mistele, B. Meyler, J. Salzman, D Ritter
    Abstract:

    Resistive switching in thin HfO2 films is studied using a metal-insulator-semiconductor Bipolar Transistor structure. Using this structure, electron injection into the semiconductor valence band can be distinguished from injection into the conduction band. In addition, the p-n junction serves as a sensitive detector of damage induced by the switching effect. The implications of the obtained experimental results on the validity of various conduction mechanisms through the insulator are discussed.

  • Metal-insulator-semiconductor Bipolar Transistor as a 4F2 vertical RRAM selection device
    2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings, 2012
    Co-Authors: E. Yalon, D Ritter
    Abstract:

    The metal-insulator-semiconductor Bipolar Transistor detects the injection of minority carriers through a resistive switching element into a semiconductor electrode. We propose that this device may serve as a selection device for Bipolar resistive switching elements in large memory crossbar arrays. The selection is accomplished by inspection of the highly non-linear minority carrier current. The experimental device provides non-linearity of about ~80 mV/decade, but 60 mV/decade is feasible. The device may potentially be confined into the minimal 4F2 footprint. The selection properties of the device are discussed, and compared to those of alternative selection devices suitable for Bipolar switching elements.

  • A Double-Heterojunction Bipolar Transistor Having a Degenerately Doped Emitter and Backward-Diode Base Contact
    IEEE Transactions on Electron Devices, 2011
    Co-Authors: D. Cohen-elias, S. Cohen, A. Gavrilov, S. Kraus, D Ritter
    Abstract:

    A double-heterojunction Bipolar Transistor having a degenerately doped emitter layer is investigated. The base-emitter Esaki diode introduces very low input impedance in the off- state but does not degrade the current gain at high forward bias. The heavily doped emitter layer makes it possible to scale the emitter-layer thickness considerably. The heavily doped emitter layer also allows contacting the base via the base-emitter backward diode. The high-frequency performance of the device is presented.

  • A single-stage three-terminal heterojunction Bipolar Transistor optoelectronic mixer
    Journal of Lightwave Technology, 1998
    Co-Authors: Y. Betser, D Ritter, A.j. Seed, A. Madjar
    Abstract:

    A high-conversion gain three-terminal heterojunction Bipolar Transistor (HBT) optoelectronic mixer has been demonstrated. The maximum obtained intrinsic conversion gain was 10.4 dB. The mixing performance was measured as a function of the dc bias of the device and local oscillator power level. A SPICE-based large signal model was employed to simulate the device. The main nonlinear effects which contributed to the mixing process were the voltage dependence of the dynamic emitter resistance, and the variation of the current gain in the saturation regime.

Tomislav Suligoj - One of the best experts on this subject based on the ideXlab platform.

  • Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration
    IEEE Transactions on Electron Devices, 2012
    Co-Authors: Marko Koricic, Tomislav Suligoj, Hidenori Mochizuki, So-ichi Morita, Katsumi Shinomura, Hisaya Imai
    Abstract:

    Fabrication of a novel high-voltage double-emitter horizontal current Bipolar Transistor (HCBT) structure integrated with the standard 0.18-μm CMOS and high-speed HCBT is presented. The device takes advantage of 3-D collector charge sharing to achieve full depletion of the intrinsic collector region and to limit the electric field at the base-collector junction. Transistors with BVCEO = 12.6 V, fT ·BVCEO = 160 GHz·V , and β·VA = 28 700 V are demonstrated. The device is fabricated in HCBT BiCMOS process flow without the use of additional lithography masks and represents a zero-cost solution for integration of a high-voltage Bipolar device.

  • Examination of Horizontal Current Bipolar Transistor (HCBT) with double and single polysilicon region
    2012 IEEE Bipolar BiCMOS Circuits and Technology Meeting (BCTM), 2012
    Co-Authors: Tomislav Suligoj, M. Koričić, H. Mochizuki, S. Morita, K. Shinomura, H. Imai
    Abstract:

    Horizontal Current Bipolar Transistor (HCBT) with implanted n+ collector (single-poly HCBT) has a higher fT and fmax by 50 % and 36%, respectively, comparing to HCBT with polysilicon n+ collector (double-poly HCBT). The physical mechanisms responsible for the improvement of fT and fmax of single-poly HCBT are examined by the measurements of Transistors, test structures and by simulations. Besides the current crowding effect, it is shown that RC dominantly limits fT in double-poly HCBT. The dominant component of RC is identified to be the resistance of the interface oxide between the n+ polysilicon and the n-hill collector regions.

  • Collector region design and optimization in Horizontal Current Bipolar Transistor (HCBT)
    2010 IEEE Bipolar BiCMOS Circuits and Technology Meeting (BCTM), 2010
    Co-Authors: Tomislav Suligoj, M. Koričić, H. Mochizuki, S. Morita, K. Shinomura, H. Imai
    Abstract:

    Three different types of the n-collector region of Horizontal Current Bipolar Transistor (HCBT) are analyzed and compared. The optimum n-collector profile suppresses the charge sharing effect between the intrinsic and extrinsic base regions, resulting in the uniform base width and electric field in the intrinsic Transistor. This implies a maximum BVCEO and an optimum fTBVCEO product among compared structures. The HCBT with a selectively implanted collector (SIC) is introduced and examined. It reduces RC and increases fT comparing to the other n-collector designs. The analyses give the guidelines for the optimum HCBT design for targeted applications.

  • Optimization of horizontal current Bipolar Transistor structure
    2001
    Co-Authors: Tomislav Suligoj
    Abstract:

    A novel silicon Bipolar Transistor called Horizontal Current Bipolar Transistor (HCBT) is successfully developed and fabricated, as the first Bipolar

  • Horizontal current Bipolar Transistor (HCBT): a new concept of silicon Bipolar Transistor technology
    IEEE Transactions on Electron Devices, 2001
    Co-Authors: P. Biljanovic, Tomislav Suligoj
    Abstract:

    A new concept of silicon Bipolar Transistor technology is proposed. The resulting horizontal current Bipolar Transistor (HCBT) is simulated assuming the 0.25 /spl mu/m technology. The surface of the device is smaller than conventional super-self aligned Bipolar Transistors. The same doping profile as in known vertical current devices is achieved by simpler technology using single polysilicon layer, without conventional epitaxial and n/sup +/ buried layers and with reduced number of lithography masks and technological steps. The simulated dc and ac characteristics of HCBT are similar to the characteristics of standard SST devices.

S. Cohen - One of the best experts on this subject based on the ideXlab platform.

  • Resistive Switching in $\hbox{HfO}_{2}$ Probed by a Metal–Insulator–Semiconductor Bipolar Transistor
    IEEE Electron Device Letters, 2012
    Co-Authors: E. Yalon, A. Gavrilov, S. Cohen, D. Mistele, B. Meyler, J. Salzman, D Ritter
    Abstract:

    Resistive switching in thin HfO2 films is studied using a metal-insulator-semiconductor Bipolar Transistor structure. Using this structure, electron injection into the semiconductor valence band can be distinguished from injection into the conduction band. In addition, the p-n junction serves as a sensitive detector of damage induced by the switching effect. The implications of the obtained experimental results on the validity of various conduction mechanisms through the insulator are discussed.

  • resistive switching in hbox hfo _ 2 probed by a metal insulator semiconductor Bipolar Transistor
    IEEE Electron Device Letters, 2012
    Co-Authors: E. Yalon, A. Gavrilov, S. Cohen, D. Mistele, B. Meyler, J. Salzman, D Ritter
    Abstract:

    Resistive switching in thin HfO2 films is studied using a metal-insulator-semiconductor Bipolar Transistor structure. Using this structure, electron injection into the semiconductor valence band can be distinguished from injection into the conduction band. In addition, the p-n junction serves as a sensitive detector of damage induced by the switching effect. The implications of the obtained experimental results on the validity of various conduction mechanisms through the insulator are discussed.

  • A Double-Heterojunction Bipolar Transistor Having a Degenerately Doped Emitter and Backward-Diode Base Contact
    IEEE Transactions on Electron Devices, 2011
    Co-Authors: D. Cohen-elias, S. Cohen, A. Gavrilov, S. Kraus, D Ritter
    Abstract:

    A double-heterojunction Bipolar Transistor having a degenerately doped emitter layer is investigated. The base-emitter Esaki diode introduces very low input impedance in the off- state but does not degrade the current gain at high forward bias. The heavily doped emitter layer makes it possible to scale the emitter-layer thickness considerably. The heavily doped emitter layer also allows contacting the base via the base-emitter backward diode. The high-frequency performance of the device is presented.

A. Gavrilov - One of the best experts on this subject based on the ideXlab platform.

  • Resistive Switching in $\hbox{HfO}_{2}$ Probed by a Metal–Insulator–Semiconductor Bipolar Transistor
    IEEE Electron Device Letters, 2012
    Co-Authors: E. Yalon, A. Gavrilov, S. Cohen, D. Mistele, B. Meyler, J. Salzman, D Ritter
    Abstract:

    Resistive switching in thin HfO2 films is studied using a metal-insulator-semiconductor Bipolar Transistor structure. Using this structure, electron injection into the semiconductor valence band can be distinguished from injection into the conduction band. In addition, the p-n junction serves as a sensitive detector of damage induced by the switching effect. The implications of the obtained experimental results on the validity of various conduction mechanisms through the insulator are discussed.

  • resistive switching in hbox hfo _ 2 probed by a metal insulator semiconductor Bipolar Transistor
    IEEE Electron Device Letters, 2012
    Co-Authors: E. Yalon, A. Gavrilov, S. Cohen, D. Mistele, B. Meyler, J. Salzman, D Ritter
    Abstract:

    Resistive switching in thin HfO2 films is studied using a metal-insulator-semiconductor Bipolar Transistor structure. Using this structure, electron injection into the semiconductor valence band can be distinguished from injection into the conduction band. In addition, the p-n junction serves as a sensitive detector of damage induced by the switching effect. The implications of the obtained experimental results on the validity of various conduction mechanisms through the insulator are discussed.

  • A Double-Heterojunction Bipolar Transistor Having a Degenerately Doped Emitter and Backward-Diode Base Contact
    IEEE Transactions on Electron Devices, 2011
    Co-Authors: D. Cohen-elias, S. Cohen, A. Gavrilov, S. Kraus, D Ritter
    Abstract:

    A double-heterojunction Bipolar Transistor having a degenerately doped emitter layer is investigated. The base-emitter Esaki diode introduces very low input impedance in the off- state but does not degrade the current gain at high forward bias. The heavily doped emitter layer makes it possible to scale the emitter-layer thickness considerably. The heavily doped emitter layer also allows contacting the base via the base-emitter backward diode. The high-frequency performance of the device is presented.

E. Yalon - One of the best experts on this subject based on the ideXlab platform.

  • Resistive Switching in $\hbox{HfO}_{2}$ Probed by a Metal–Insulator–Semiconductor Bipolar Transistor
    IEEE Electron Device Letters, 2012
    Co-Authors: E. Yalon, A. Gavrilov, S. Cohen, D. Mistele, B. Meyler, J. Salzman, D Ritter
    Abstract:

    Resistive switching in thin HfO2 films is studied using a metal-insulator-semiconductor Bipolar Transistor structure. Using this structure, electron injection into the semiconductor valence band can be distinguished from injection into the conduction band. In addition, the p-n junction serves as a sensitive detector of damage induced by the switching effect. The implications of the obtained experimental results on the validity of various conduction mechanisms through the insulator are discussed.

  • resistive switching in hbox hfo _ 2 probed by a metal insulator semiconductor Bipolar Transistor
    IEEE Electron Device Letters, 2012
    Co-Authors: E. Yalon, A. Gavrilov, S. Cohen, D. Mistele, B. Meyler, J. Salzman, D Ritter
    Abstract:

    Resistive switching in thin HfO2 films is studied using a metal-insulator-semiconductor Bipolar Transistor structure. Using this structure, electron injection into the semiconductor valence band can be distinguished from injection into the conduction band. In addition, the p-n junction serves as a sensitive detector of damage induced by the switching effect. The implications of the obtained experimental results on the validity of various conduction mechanisms through the insulator are discussed.