The Experts below are selected from a list of 1380 Experts worldwide ranked by ideXlab platform
Jung-hee Lee - One of the best experts on this subject based on the ideXlab platform.
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algan gan based lateral type schottky barrier diode with very low reverse recovery charge at high temperature
IEEE Transactions on Electron Devices, 2013Co-Authors: Jae-hoon Lee, Chanho Park, Jung-hee LeeAbstract:We have demonstrated the lateral multifinger-type Schottky barrier diode (SBD) with Bonding Pad over active structure fabricated on the AlGaN/GaN heterostructure prepared on sapphire substrate. The fabricated GaN-SBD with size of 9 mm2 exhibited excellent device characteristics such as forward current of 4.5 A at 1.5 V, leakage current of 6 μA at 600 V, and high breakdown voltage of 747 V. The temperature variations of GaN-SBD for the reverse recovery characteristics are negligible and the value of reverse-recovery charge (Q)rr of GaN-SBD is one twentieth of Si-diode at 175°C.
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840 v 6 a algan gan schottky barrier diode with Bonding Pad over active structure prepared on sapphire substrate
IEEE Electron Device Letters, 2012Co-Authors: Jae-hoon Lee, Jongkyu Yoo, Heesung Kang, Jung-hee LeeAbstract:Multifinger lateral-type AlGaN/GaN Schottky barrier diode (SBD) with Bonding Pad over active (BPOA) structure was fabricated and exhibited excellent device performances, such as forward current of 6 A at 1.5 V, leakage current of 16 A at -600 V, reverse-recovery time (Trr) of 18 ns, breakdown voltage of 840 V, and low specific on-resistance (Ron) of 9 m cm2, resulting in the figure-of-merit (VBR2/Ron) as high as 78 MW/cm2, which demonstrates that the AlGaN/GaN SBD with BPOA structure has a great potential application to the high-power electronics.
Jae-hoon Lee - One of the best experts on this subject based on the ideXlab platform.
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algan gan based lateral type schottky barrier diode with very low reverse recovery charge at high temperature
IEEE Transactions on Electron Devices, 2013Co-Authors: Jae-hoon Lee, Chanho Park, Jung-hee LeeAbstract:We have demonstrated the lateral multifinger-type Schottky barrier diode (SBD) with Bonding Pad over active structure fabricated on the AlGaN/GaN heterostructure prepared on sapphire substrate. The fabricated GaN-SBD with size of 9 mm2 exhibited excellent device characteristics such as forward current of 4.5 A at 1.5 V, leakage current of 6 μA at 600 V, and high breakdown voltage of 747 V. The temperature variations of GaN-SBD for the reverse recovery characteristics are negligible and the value of reverse-recovery charge (Q)rr of GaN-SBD is one twentieth of Si-diode at 175°C.
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840 v 6 a algan gan schottky barrier diode with Bonding Pad over active structure prepared on sapphire substrate
IEEE Electron Device Letters, 2012Co-Authors: Jae-hoon Lee, Jongkyu Yoo, Heesung Kang, Jung-hee LeeAbstract:Multifinger lateral-type AlGaN/GaN Schottky barrier diode (SBD) with Bonding Pad over active (BPOA) structure was fabricated and exhibited excellent device performances, such as forward current of 6 A at 1.5 V, leakage current of 16 A at -600 V, reverse-recovery time (Trr) of 18 ns, breakdown voltage of 840 V, and low specific on-resistance (Ron) of 9 m cm2, resulting in the figure-of-merit (VBR2/Ron) as high as 78 MW/cm2, which demonstrates that the AlGaN/GaN SBD with BPOA structure has a great potential application to the high-power electronics.
F Udrea - One of the best experts on this subject based on the ideXlab platform.
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Bonding Pad over active area layout for lateral algan gan power hemts a critical view
IEEE Transactions on Electron Devices, 2019Co-Authors: Loizos Efthymiou, Giorgia Longobardi, Gianluca Camuso, F UdreaAbstract:This paper investigates the advantages and disadvantages of Bonding Pad over active area (BPOA) layout over a conventional layout for lateral AlGaN/GaN HEMTs designed for use in power applications. Extensive analysis of the performance of a BPOA device, both experimentally and supported by 3-D TCAD model simulations, reveals that while it can offer a higher current capability per unit area, it can lead to other disadvantages compared to a conventional design when considering reliability aspects.
Loizos Efthymiou - One of the best experts on this subject based on the ideXlab platform.
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Bonding Pad over active area layout for lateral algan gan power hemts a critical view
IEEE Transactions on Electron Devices, 2019Co-Authors: Loizos Efthymiou, Giorgia Longobardi, Gianluca Camuso, F UdreaAbstract:This paper investigates the advantages and disadvantages of Bonding Pad over active area (BPOA) layout over a conventional layout for lateral AlGaN/GaN HEMTs designed for use in power applications. Extensive analysis of the performance of a BPOA device, both experimentally and supported by 3-D TCAD model simulations, reveals that while it can offer a higher current capability per unit area, it can lead to other disadvantages compared to a conventional design when considering reliability aspects.
Joon Seop Kwak - One of the best experts on this subject based on the ideXlab platform.
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Bonding Pad over active structure for chip shrinkage of high power algan gan hfets
IEEE Transactions on Electron Devices, 2016Co-Authors: Taehoon Jang, Joon Seop KwakAbstract:This paper reports a Bonding Pad over active (BPOA) structure with photosensitive polyimide (PSPI) as the intermetal dielectric layer to reduce the chip size of high-power enhancement-mode AlGaN/GaN heterojunction FETs (HEFTs) on a 150-mm (6-in) Si substrate. The fabricated AlGaN/GaN HFETs with a BPOA structure exhibited a threshold voltage and a maximum current of 0.6 V and 38.6 A, respectively, at $V_{\textrm {GS}}$ of 6 V. The leakage current was $4.3 \times 10^{-5}$ A at 700 V, which was the same value as that of the AlGaN/GaN HFETs without a BPOA structure. The reliability of the AlGaN/GaN HFETs with the BPOA structure during the packaging process was improved by the PSPI layer and a modified Bonding Pad structure, which endured the stress during the wedge wire Bonding and epoxy molding processes.