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Breakdown Point

The Experts below are selected from a list of 2856 Experts worldwide ranked by ideXlab platform

Yintang Yang – 1st expert on this subject based on the ideXlab platform

  • Novel Power MOSFET With Partial SiC/Si Heterojunction to Improve Breakdown Voltage by Breakdown Point Transfer (BPT) Terminal Technology
    IEEE Journal of the Electron Devices Society, 2020
    Co-Authors: Xiameng Wang, Baoxing Duan, Xin Yang, Yintang Yang

    Abstract:

    In this paper, a new vertical double-diffused metal-oxide semiconductor field effect transistors (VDMOS) is proposed with the partial SiC/Si heterojunction (Partial SiC/Si VDMOS) under the drain electrode in this paper for the first time. The Breakdown Point transfer technique (BPT) is used to transfer the Breakdown Point from the radius of curvature is large to the radius of curvature is small in the interface between Pwell and Ndrift region, which causes the longitudinal peak value of electric field to be raised, and the higher Breakdown voltage (BV) can be obtained. At the same time, the formation of highly doped N-type silicon trench alleviates interface state problems caused by current flowing through SiC/Si heterojunction and further optimized the whole SiC/Si heterojunction (SiC/Si VDMOS). The limit line of the silicon has been broken because the result is improved between the BV and the specific on-resistance (Ron,sp). Compared with the conventional Si VDMOS, the BV is increased from 238V to 342V, and the Ron,sp is reduced from 14.24mΩ·cm2 to 13.92mΩ·cm2.

  • Si/SiC heterojunction lateral double-diffused metal oxide semiconductor field effect transistor with Breakdown Point transfer (BPT) terminal technology
    Micro & Nano Letters, 2019
    Co-Authors: Baoxing Duan, Yunjia Huang, Jingyu Xing, Yintang Yang

    Abstract:

    A novel silicon (Si) on silicon carbide (SiC) lateral double-diffused metal oxide semiconductor field effect transistor with deep drain region is proposed. Its main idea is transferring the Breakdown Point and utilising the high critical electric field of SiC material to suppress the curvature effect of the drain, which eventually alleviates the trade-off relationship between Breakdown voltage (BV) and specific on-resistance (Ron,sp). Through the TCAD simulation, the results show that the BV is significantly improved from 240 V for conventional Si lateral double-diffused metal oxide semiconductor (LDMOS) to 384 V for the proposed structure with the drift region length of 20 μm, increased by 60%. The figure-of-merit of the conventional Si LDMOS and the Si/SiC LDMOS are 2.04 and 4.26 MW/cm2, respectively. It indicates that the proposed structure has better performance than the Si counterpart. The influences of design parameters and interfacial charges on the device performance are also discussed in this work.

  • novel sic si heterojunction power mosfet with Breakdown Point transfer terminal technology by tcad simulation study
    IEEE Transactions on Electron Devices, 2018
    Co-Authors: Baoxing Duan, Jianmei Lv, Xin Yang, Yintang Yang

    Abstract:

    The novel SiC/Si heterojunction power MOSFET has been advanced to improve the tradeoff between the Breakdown voltage (BV) and specific on-resistance ( ${R}_{ \mathrm{ON},\textsf {sp}}$ ). The innovative terminal technology of Breakdown Point transfer has been applied to SiC/Si MOSFET, which transfers the Breakdown Point from the high electric field Points to the low electric field areas and improves the BV compared with the conventional Si power MOSFET. The results have been shown by technology computer aided design simulation that the BV has been improved for SiC/Si U-MOSFET due to PBT technology. The BV of the proposed SiC/Si U-MOSFET is increased to 358 V compared with the Si U-MOSFET of 107 V with the same device parameters. The simulated ${R}_{ \mathrm{ON},\textsf {sp}}$ of the SiC/Si U-MOSFET is $0.51~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 358 V, which is lower than that of $1.12~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 107 V for the conventional Si U-MOSFET. The important law is discovered that the high BV and low ${R}_{ \mathrm{ON},\textsf {sp}}$ can be obtained simultaneously for SiC/Si U-MOSFET when the depth of the trench oxide layer is increased, which cannot be taken into account in the conventional Si U-MOSFET. Therefore, the silicon and superjunction VDMOS (double-diffused MOSFET) limits had been broken for SiC/Si U-MOSFET. The influences of the different interface charge (acceptorlike and donorlike) have been analyzed for SiC/Si VDMOS and SiC/Si U-MOSFET.

Baoxing Duan – 2nd expert on this subject based on the ideXlab platform

  • Novel Power MOSFET With Partial SiC/Si Heterojunction to Improve Breakdown Voltage by Breakdown Point Transfer (BPT) Terminal Technology
    IEEE Journal of the Electron Devices Society, 2020
    Co-Authors: Xiameng Wang, Baoxing Duan, Xin Yang, Yintang Yang

    Abstract:

    In this paper, a new vertical double-diffused metal-oxide semiconductor field effect transistors (VDMOS) is proposed with the partial SiC/Si heterojunction (Partial SiC/Si VDMOS) under the drain electrode in this paper for the first time. The Breakdown Point transfer technique (BPT) is used to transfer the Breakdown Point from the radius of curvature is large to the radius of curvature is small in the interface between Pwell and Ndrift region, which causes the longitudinal peak value of electric field to be raised, and the higher Breakdown voltage (BV) can be obtained. At the same time, the formation of highly doped N-type silicon trench alleviates interface state problems caused by current flowing through SiC/Si heterojunction and further optimized the whole SiC/Si heterojunction (SiC/Si VDMOS). The limit line of the silicon has been broken because the result is improved between the BV and the specific on-resistance (Ron,sp). Compared with the conventional Si VDMOS, the BV is increased from 238V to 342V, and the Ron,sp is reduced from 14.24mΩ·cm2 to 13.92mΩ·cm2.

  • Si/SiC heterojunction lateral double-diffused metal oxide semiconductor field effect transistor with Breakdown Point transfer (BPT) terminal technology
    Micro & Nano Letters, 2019
    Co-Authors: Baoxing Duan, Yunjia Huang, Jingyu Xing, Yintang Yang

    Abstract:

    A novel silicon (Si) on silicon carbide (SiC) lateral double-diffused metal oxide semiconductor field effect transistor with deep drain region is proposed. Its main idea is transferring the Breakdown Point and utilising the high critical electric field of SiC material to suppress the curvature effect of the drain, which eventually alleviates the trade-off relationship between Breakdown voltage (BV) and specific on-resistance (Ron,sp). Through the TCAD simulation, the results show that the BV is significantly improved from 240 V for conventional Si lateral double-diffused metal oxide semiconductor (LDMOS) to 384 V for the proposed structure with the drift region length of 20 μm, increased by 60%. The figure-of-merit of the conventional Si LDMOS and the Si/SiC LDMOS are 2.04 and 4.26 MW/cm2, respectively. It indicates that the proposed structure has better performance than the Si counterpart. The influences of design parameters and interfacial charges on the device performance are also discussed in this work.

  • novel sic si heterojunction power mosfet with Breakdown Point transfer terminal technology by tcad simulation study
    IEEE Transactions on Electron Devices, 2018
    Co-Authors: Baoxing Duan, Jianmei Lv, Xin Yang, Yintang Yang

    Abstract:

    The novel SiC/Si heterojunction power MOSFET has been advanced to improve the tradeoff between the Breakdown voltage (BV) and specific on-resistance ( ${R}_{ \mathrm{ON},\textsf {sp}}$ ). The innovative terminal technology of Breakdown Point transfer has been applied to SiC/Si MOSFET, which transfers the Breakdown Point from the high electric field Points to the low electric field areas and improves the BV compared with the conventional Si power MOSFET. The results have been shown by technology computer aided design simulation that the BV has been improved for SiC/Si U-MOSFET due to PBT technology. The BV of the proposed SiC/Si U-MOSFET is increased to 358 V compared with the Si U-MOSFET of 107 V with the same device parameters. The simulated ${R}_{ \mathrm{ON},\textsf {sp}}$ of the SiC/Si U-MOSFET is $0.51~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 358 V, which is lower than that of $1.12~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 107 V for the conventional Si U-MOSFET. The important law is discovered that the high BV and low ${R}_{ \mathrm{ON},\textsf {sp}}$ can be obtained simultaneously for SiC/Si U-MOSFET when the depth of the trench oxide layer is increased, which cannot be taken into account in the conventional Si U-MOSFET. Therefore, the silicon and superjunction VDMOS (double-diffused MOSFET) limits had been broken for SiC/Si U-MOSFET. The influences of the different interface charge (acceptorlike and donorlike) have been analyzed for SiC/Si VDMOS and SiC/Si U-MOSFET.

Xin Yang – 3rd expert on this subject based on the ideXlab platform

  • Novel Power MOSFET With Partial SiC/Si Heterojunction to Improve Breakdown Voltage by Breakdown Point Transfer (BPT) Terminal Technology
    IEEE Journal of the Electron Devices Society, 2020
    Co-Authors: Xiameng Wang, Baoxing Duan, Xin Yang, Yintang Yang

    Abstract:

    In this paper, a new vertical double-diffused metal-oxide semiconductor field effect transistors (VDMOS) is proposed with the partial SiC/Si heterojunction (Partial SiC/Si VDMOS) under the drain electrode in this paper for the first time. The Breakdown Point transfer technique (BPT) is used to transfer the Breakdown Point from the radius of curvature is large to the radius of curvature is small in the interface between Pwell and Ndrift region, which causes the longitudinal peak value of electric field to be raised, and the higher Breakdown voltage (BV) can be obtained. At the same time, the formation of highly doped N-type silicon trench alleviates interface state problems caused by current flowing through SiC/Si heterojunction and further optimized the whole SiC/Si heterojunction (SiC/Si VDMOS). The limit line of the silicon has been broken because the result is improved between the BV and the specific on-resistance (Ron,sp). Compared with the conventional Si VDMOS, the BV is increased from 238V to 342V, and the Ron,sp is reduced from 14.24mΩ·cm2 to 13.92mΩ·cm2.

  • novel sic si heterojunction power mosfet with Breakdown Point transfer terminal technology by tcad simulation study
    IEEE Transactions on Electron Devices, 2018
    Co-Authors: Baoxing Duan, Jianmei Lv, Xin Yang, Yintang Yang

    Abstract:

    The novel SiC/Si heterojunction power MOSFET has been advanced to improve the tradeoff between the Breakdown voltage (BV) and specific on-resistance ( ${R}_{ \mathrm{ON},\textsf {sp}}$ ). The innovative terminal technology of Breakdown Point transfer has been applied to SiC/Si MOSFET, which transfers the Breakdown Point from the high electric field Points to the low electric field areas and improves the BV compared with the conventional Si power MOSFET. The results have been shown by technology computer aided design simulation that the BV has been improved for SiC/Si U-MOSFET due to PBT technology. The BV of the proposed SiC/Si U-MOSFET is increased to 358 V compared with the Si U-MOSFET of 107 V with the same device parameters. The simulated ${R}_{ \mathrm{ON},\textsf {sp}}$ of the SiC/Si U-MOSFET is $0.51~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 358 V, which is lower than that of $1.12~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 107 V for the conventional Si U-MOSFET. The important law is discovered that the high BV and low ${R}_{ \mathrm{ON},\textsf {sp}}$ can be obtained simultaneously for SiC/Si U-MOSFET when the depth of the trench oxide layer is increased, which cannot be taken into account in the conventional Si U-MOSFET. Therefore, the silicon and superjunction VDMOS (double-diffused MOSFET) limits had been broken for SiC/Si U-MOSFET. The influences of the different interface charge (acceptorlike and donorlike) have been analyzed for SiC/Si VDMOS and SiC/Si U-MOSFET.

  • Novel SiC/Si Heterojunction Power MOSFET With Breakdown Point Transfer Terminal Technology by TCAD Simulation Study
    IEEE Transactions on Electron Devices, 2018
    Co-Authors: Baoxing Duan, Jianmei Lv, Xin Yang, Yintang Yang

    Abstract:

    The novel SiC/Si heterojunction power MOSFET has been advanced to improve the tradeoff between the Breakdown voltage (BV) and specific on-resistance ( ${R}_{ \mathrm{ON},\textsf {sp}}$ ). The innovative terminal technology of Breakdown Point transfer has been applied to SiC/Si MOSFET, which transfers the Breakdown Point from the high electric field Points to the low electric field areas and improves the BV compared with the conventional Si power MOSFET. The results have been shown by technology computer aided design simulation that the BV has been improved for SiC/Si U-MOSFET due to PBT technology. The BV of the proposed SiC/Si U-MOSFET is increased to 358 V compared with the Si U-MOSFET of 107 V with the same device parameters. The simulated ${R}_{ \mathrm{ON},\textsf {sp}}$ of the SiC/Si U-MOSFET is $0.51~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 358 V, which is lower than that of $1.12~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 107 V for the conventional Si U-MOSFET. The important law is discovered that the high BV and low ${R}_{ \mathrm{ON},\textsf {sp}}$ can be obtained simultaneously for SiC/Si U-MOSFET when the depth of the trench oxide layer is increased, which cannot be taken into account in the conventional Si U-MOSFET. Therefore, the silicon and superjunction VDMOS (double-diffused MOSFET) limits had been broken for SiC/Si U-MOSFET. The influences of the different interface charge (acceptorlike and donorlike) have been analyzed for SiC/Si VDMOS and SiC/Si U-MOSFET.