The Experts below are selected from a list of 2856 Experts worldwide ranked by ideXlab platform
Yintang Yang - One of the best experts on this subject based on the ideXlab platform.
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Novel Power MOSFET With Partial SiC/Si Heterojunction to Improve Breakdown Voltage by Breakdown Point Transfer (BPT) Terminal Technology
IEEE Journal of the Electron Devices Society, 2020Co-Authors: Xiameng Wang, Baoxing Duan, Xin Yang, Yintang YangAbstract:In this paper, a new vertical double-diffused metal-oxide semiconductor field effect transistors (VDMOS) is proposed with the partial SiC/Si heterojunction (Partial SiC/Si VDMOS) under the drain electrode in this paper for the first time. The Breakdown Point transfer technique (BPT) is used to transfer the Breakdown Point from the radius of curvature is large to the radius of curvature is small in the interface between Pwell and Ndrift region, which causes the longitudinal peak value of electric field to be raised, and the higher Breakdown voltage (BV) can be obtained. At the same time, the formation of highly doped N-type silicon trench alleviates interface state problems caused by current flowing through SiC/Si heterojunction and further optimized the whole SiC/Si heterojunction (SiC/Si VDMOS). The limit line of the silicon has been broken because the result is improved between the BV and the specific on-resistance (Ron,sp). Compared with the conventional Si VDMOS, the BV is increased from 238V to 342V, and the Ron,sp is reduced from 14.24mΩ·cm2 to 13.92mΩ·cm2.
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Si/SiC heterojunction lateral double-diffused metal oxide semiconductor field effect transistor with Breakdown Point transfer (BPT) terminal technology
Micro & Nano Letters, 2019Co-Authors: Baoxing Duan, Yunjia Huang, Jingyu Xing, Yintang YangAbstract:A novel silicon (Si) on silicon carbide (SiC) lateral double-diffused metal oxide semiconductor field effect transistor with deep drain region is proposed. Its main idea is transferring the Breakdown Point and utilising the high critical electric field of SiC material to suppress the curvature effect of the drain, which eventually alleviates the trade-off relationship between Breakdown voltage (BV) and specific on-resistance (Ron,sp). Through the TCAD simulation, the results show that the BV is significantly improved from 240 V for conventional Si lateral double-diffused metal oxide semiconductor (LDMOS) to 384 V for the proposed structure with the drift region length of 20 μm, increased by 60%. The figure-of-merit of the conventional Si LDMOS and the Si/SiC LDMOS are 2.04 and 4.26 MW/cm2, respectively. It indicates that the proposed structure has better performance than the Si counterpart. The influences of design parameters and interfacial charges on the device performance are also discussed in this work.
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novel sic si heterojunction power mosfet with Breakdown Point transfer terminal technology by tcad simulation study
IEEE Transactions on Electron Devices, 2018Co-Authors: Baoxing Duan, Jianmei Lv, Xin Yang, Yintang YangAbstract:The novel SiC/Si heterojunction power MOSFET has been advanced to improve the tradeoff between the Breakdown voltage (BV) and specific on-resistance ( ${R}_{ \mathrm{ON},\textsf {sp}}$ ). The innovative terminal technology of Breakdown Point transfer has been applied to SiC/Si MOSFET, which transfers the Breakdown Point from the high electric field Points to the low electric field areas and improves the BV compared with the conventional Si power MOSFET. The results have been shown by technology computer aided design simulation that the BV has been improved for SiC/Si U-MOSFET due to PBT technology. The BV of the proposed SiC/Si U-MOSFET is increased to 358 V compared with the Si U-MOSFET of 107 V with the same device parameters. The simulated ${R}_{ \mathrm{ON},\textsf {sp}}$ of the SiC/Si U-MOSFET is $0.51~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 358 V, which is lower than that of $1.12~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 107 V for the conventional Si U-MOSFET. The important law is discovered that the high BV and low ${R}_{ \mathrm{ON},\textsf {sp}}$ can be obtained simultaneously for SiC/Si U-MOSFET when the depth of the trench oxide layer is increased, which cannot be taken into account in the conventional Si U-MOSFET. Therefore, the silicon and superjunction VDMOS (double-diffused MOSFET) limits had been broken for SiC/Si U-MOSFET. The influences of the different interface charge (acceptorlike and donorlike) have been analyzed for SiC/Si VDMOS and SiC/Si U-MOSFET.
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Novel SiC/Si Heterojunction Power MOSFET With Breakdown Point Transfer Terminal Technology by TCAD Simulation Study
IEEE Transactions on Electron Devices, 2018Co-Authors: Baoxing Duan, Jianmei Lv, Xin Yang, Yintang YangAbstract:The novel SiC/Si heterojunction power MOSFET has been advanced to improve the tradeoff between the Breakdown voltage (BV) and specific on-resistance ( ${R}_{ \mathrm{ON},\textsf {sp}}$ ). The innovative terminal technology of Breakdown Point transfer has been applied to SiC/Si MOSFET, which transfers the Breakdown Point from the high electric field Points to the low electric field areas and improves the BV compared with the conventional Si power MOSFET. The results have been shown by technology computer aided design simulation that the BV has been improved for SiC/Si U-MOSFET due to PBT technology. The BV of the proposed SiC/Si U-MOSFET is increased to 358 V compared with the Si U-MOSFET of 107 V with the same device parameters. The simulated ${R}_{ \mathrm{ON},\textsf {sp}}$ of the SiC/Si U-MOSFET is $0.51~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 358 V, which is lower than that of $1.12~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 107 V for the conventional Si U-MOSFET. The important law is discovered that the high BV and low ${R}_{ \mathrm{ON},\textsf {sp}}$ can be obtained simultaneously for SiC/Si U-MOSFET when the depth of the trench oxide layer is increased, which cannot be taken into account in the conventional Si U-MOSFET. Therefore, the silicon and superjunction VDMOS (double-diffused MOSFET) limits had been broken for SiC/Si U-MOSFET. The influences of the different interface charge (acceptorlike and donorlike) have been analyzed for SiC/Si VDMOS and SiC/Si U-MOSFET.
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SiC/Si heterojunction VDMOS breaking silicon limit by Breakdown Point transfer technology
Micro & Nano Letters, 2018Co-Authors: Baoxing Duan, Jianmei Lv, Yihan Zhao, Yintang YangAbstract:An innovative semiconductor power vertical double-diffused MOSFET (VDMOS) is proposed for the first time with the SiC/Si heterojunction at the P-base and N-drift region (called for SiC/Si VDMOS), which improves the trade-off between the Breakdown voltage (BV) and specific on-resistance (Ron,sp). The `soft' Si material has been combined with the `hard' SiC material to play their own advantages for SiC/Si VDMOS. The Si has been formed above the 6H-SiC substrate to make up the channel and source electrode, and the 6H-SiC is underneath the P-base to form the SiC/Si heterojunction. The novel terminal technology of Breakdown Point transfer has been advanced for the first time and applied to SiC/Si VDMOS, which transfers the Breakdown Point of SiC/Si VDMOS and improve the BV compared with Si VDMOS. The simulated results have been shown that the optimised BV of proposed SiC/Si VDMOS is increased from 226 to 578 V compared with the conventional Si VDMOS with the same drift region length, which is because the Breakdown Point is transferred from the higher electric field area with the maximum curvature radius to the low electric field area. The simulated Ron,sp of SiC/Si VDMOS is 17.4 mΩ·cm2 with the BV of 578 V, which is lower than that of 41.01 mΩ·cm2 with the BV of 226V in Si VDMOS. The silicon limit relationship has been broken for SiC/Si VDMOS.
Baoxing Duan - One of the best experts on this subject based on the ideXlab platform.
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Novel Power MOSFET With Partial SiC/Si Heterojunction to Improve Breakdown Voltage by Breakdown Point Transfer (BPT) Terminal Technology
IEEE Journal of the Electron Devices Society, 2020Co-Authors: Xiameng Wang, Baoxing Duan, Xin Yang, Yintang YangAbstract:In this paper, a new vertical double-diffused metal-oxide semiconductor field effect transistors (VDMOS) is proposed with the partial SiC/Si heterojunction (Partial SiC/Si VDMOS) under the drain electrode in this paper for the first time. The Breakdown Point transfer technique (BPT) is used to transfer the Breakdown Point from the radius of curvature is large to the radius of curvature is small in the interface between Pwell and Ndrift region, which causes the longitudinal peak value of electric field to be raised, and the higher Breakdown voltage (BV) can be obtained. At the same time, the formation of highly doped N-type silicon trench alleviates interface state problems caused by current flowing through SiC/Si heterojunction and further optimized the whole SiC/Si heterojunction (SiC/Si VDMOS). The limit line of the silicon has been broken because the result is improved between the BV and the specific on-resistance (Ron,sp). Compared with the conventional Si VDMOS, the BV is increased from 238V to 342V, and the Ron,sp is reduced from 14.24mΩ·cm2 to 13.92mΩ·cm2.
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Si/SiC heterojunction lateral double-diffused metal oxide semiconductor field effect transistor with Breakdown Point transfer (BPT) terminal technology
Micro & Nano Letters, 2019Co-Authors: Baoxing Duan, Yunjia Huang, Jingyu Xing, Yintang YangAbstract:A novel silicon (Si) on silicon carbide (SiC) lateral double-diffused metal oxide semiconductor field effect transistor with deep drain region is proposed. Its main idea is transferring the Breakdown Point and utilising the high critical electric field of SiC material to suppress the curvature effect of the drain, which eventually alleviates the trade-off relationship between Breakdown voltage (BV) and specific on-resistance (Ron,sp). Through the TCAD simulation, the results show that the BV is significantly improved from 240 V for conventional Si lateral double-diffused metal oxide semiconductor (LDMOS) to 384 V for the proposed structure with the drift region length of 20 μm, increased by 60%. The figure-of-merit of the conventional Si LDMOS and the Si/SiC LDMOS are 2.04 and 4.26 MW/cm2, respectively. It indicates that the proposed structure has better performance than the Si counterpart. The influences of design parameters and interfacial charges on the device performance are also discussed in this work.
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novel sic si heterojunction power mosfet with Breakdown Point transfer terminal technology by tcad simulation study
IEEE Transactions on Electron Devices, 2018Co-Authors: Baoxing Duan, Jianmei Lv, Xin Yang, Yintang YangAbstract:The novel SiC/Si heterojunction power MOSFET has been advanced to improve the tradeoff between the Breakdown voltage (BV) and specific on-resistance ( ${R}_{ \mathrm{ON},\textsf {sp}}$ ). The innovative terminal technology of Breakdown Point transfer has been applied to SiC/Si MOSFET, which transfers the Breakdown Point from the high electric field Points to the low electric field areas and improves the BV compared with the conventional Si power MOSFET. The results have been shown by technology computer aided design simulation that the BV has been improved for SiC/Si U-MOSFET due to PBT technology. The BV of the proposed SiC/Si U-MOSFET is increased to 358 V compared with the Si U-MOSFET of 107 V with the same device parameters. The simulated ${R}_{ \mathrm{ON},\textsf {sp}}$ of the SiC/Si U-MOSFET is $0.51~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 358 V, which is lower than that of $1.12~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 107 V for the conventional Si U-MOSFET. The important law is discovered that the high BV and low ${R}_{ \mathrm{ON},\textsf {sp}}$ can be obtained simultaneously for SiC/Si U-MOSFET when the depth of the trench oxide layer is increased, which cannot be taken into account in the conventional Si U-MOSFET. Therefore, the silicon and superjunction VDMOS (double-diffused MOSFET) limits had been broken for SiC/Si U-MOSFET. The influences of the different interface charge (acceptorlike and donorlike) have been analyzed for SiC/Si VDMOS and SiC/Si U-MOSFET.
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Novel SiC/Si Heterojunction Power MOSFET With Breakdown Point Transfer Terminal Technology by TCAD Simulation Study
IEEE Transactions on Electron Devices, 2018Co-Authors: Baoxing Duan, Jianmei Lv, Xin Yang, Yintang YangAbstract:The novel SiC/Si heterojunction power MOSFET has been advanced to improve the tradeoff between the Breakdown voltage (BV) and specific on-resistance ( ${R}_{ \mathrm{ON},\textsf {sp}}$ ). The innovative terminal technology of Breakdown Point transfer has been applied to SiC/Si MOSFET, which transfers the Breakdown Point from the high electric field Points to the low electric field areas and improves the BV compared with the conventional Si power MOSFET. The results have been shown by technology computer aided design simulation that the BV has been improved for SiC/Si U-MOSFET due to PBT technology. The BV of the proposed SiC/Si U-MOSFET is increased to 358 V compared with the Si U-MOSFET of 107 V with the same device parameters. The simulated ${R}_{ \mathrm{ON},\textsf {sp}}$ of the SiC/Si U-MOSFET is $0.51~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 358 V, which is lower than that of $1.12~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 107 V for the conventional Si U-MOSFET. The important law is discovered that the high BV and low ${R}_{ \mathrm{ON},\textsf {sp}}$ can be obtained simultaneously for SiC/Si U-MOSFET when the depth of the trench oxide layer is increased, which cannot be taken into account in the conventional Si U-MOSFET. Therefore, the silicon and superjunction VDMOS (double-diffused MOSFET) limits had been broken for SiC/Si U-MOSFET. The influences of the different interface charge (acceptorlike and donorlike) have been analyzed for SiC/Si VDMOS and SiC/Si U-MOSFET.
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SiC/Si heterojunction VDMOS breaking silicon limit by Breakdown Point transfer technology
Micro & Nano Letters, 2018Co-Authors: Baoxing Duan, Jianmei Lv, Yihan Zhao, Yintang YangAbstract:An innovative semiconductor power vertical double-diffused MOSFET (VDMOS) is proposed for the first time with the SiC/Si heterojunction at the P-base and N-drift region (called for SiC/Si VDMOS), which improves the trade-off between the Breakdown voltage (BV) and specific on-resistance (Ron,sp). The `soft' Si material has been combined with the `hard' SiC material to play their own advantages for SiC/Si VDMOS. The Si has been formed above the 6H-SiC substrate to make up the channel and source electrode, and the 6H-SiC is underneath the P-base to form the SiC/Si heterojunction. The novel terminal technology of Breakdown Point transfer has been advanced for the first time and applied to SiC/Si VDMOS, which transfers the Breakdown Point of SiC/Si VDMOS and improve the BV compared with Si VDMOS. The simulated results have been shown that the optimised BV of proposed SiC/Si VDMOS is increased from 226 to 578 V compared with the conventional Si VDMOS with the same drift region length, which is because the Breakdown Point is transferred from the higher electric field area with the maximum curvature radius to the low electric field area. The simulated Ron,sp of SiC/Si VDMOS is 17.4 mΩ·cm2 with the BV of 578 V, which is lower than that of 41.01 mΩ·cm2 with the BV of 226V in Si VDMOS. The silicon limit relationship has been broken for SiC/Si VDMOS.
Xin Yang - One of the best experts on this subject based on the ideXlab platform.
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Novel Power MOSFET With Partial SiC/Si Heterojunction to Improve Breakdown Voltage by Breakdown Point Transfer (BPT) Terminal Technology
IEEE Journal of the Electron Devices Society, 2020Co-Authors: Xiameng Wang, Baoxing Duan, Xin Yang, Yintang YangAbstract:In this paper, a new vertical double-diffused metal-oxide semiconductor field effect transistors (VDMOS) is proposed with the partial SiC/Si heterojunction (Partial SiC/Si VDMOS) under the drain electrode in this paper for the first time. The Breakdown Point transfer technique (BPT) is used to transfer the Breakdown Point from the radius of curvature is large to the radius of curvature is small in the interface between Pwell and Ndrift region, which causes the longitudinal peak value of electric field to be raised, and the higher Breakdown voltage (BV) can be obtained. At the same time, the formation of highly doped N-type silicon trench alleviates interface state problems caused by current flowing through SiC/Si heterojunction and further optimized the whole SiC/Si heterojunction (SiC/Si VDMOS). The limit line of the silicon has been broken because the result is improved between the BV and the specific on-resistance (Ron,sp). Compared with the conventional Si VDMOS, the BV is increased from 238V to 342V, and the Ron,sp is reduced from 14.24mΩ·cm2 to 13.92mΩ·cm2.
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novel sic si heterojunction power mosfet with Breakdown Point transfer terminal technology by tcad simulation study
IEEE Transactions on Electron Devices, 2018Co-Authors: Baoxing Duan, Jianmei Lv, Xin Yang, Yintang YangAbstract:The novel SiC/Si heterojunction power MOSFET has been advanced to improve the tradeoff between the Breakdown voltage (BV) and specific on-resistance ( ${R}_{ \mathrm{ON},\textsf {sp}}$ ). The innovative terminal technology of Breakdown Point transfer has been applied to SiC/Si MOSFET, which transfers the Breakdown Point from the high electric field Points to the low electric field areas and improves the BV compared with the conventional Si power MOSFET. The results have been shown by technology computer aided design simulation that the BV has been improved for SiC/Si U-MOSFET due to PBT technology. The BV of the proposed SiC/Si U-MOSFET is increased to 358 V compared with the Si U-MOSFET of 107 V with the same device parameters. The simulated ${R}_{ \mathrm{ON},\textsf {sp}}$ of the SiC/Si U-MOSFET is $0.51~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 358 V, which is lower than that of $1.12~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 107 V for the conventional Si U-MOSFET. The important law is discovered that the high BV and low ${R}_{ \mathrm{ON},\textsf {sp}}$ can be obtained simultaneously for SiC/Si U-MOSFET when the depth of the trench oxide layer is increased, which cannot be taken into account in the conventional Si U-MOSFET. Therefore, the silicon and superjunction VDMOS (double-diffused MOSFET) limits had been broken for SiC/Si U-MOSFET. The influences of the different interface charge (acceptorlike and donorlike) have been analyzed for SiC/Si VDMOS and SiC/Si U-MOSFET.
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Novel SiC/Si Heterojunction Power MOSFET With Breakdown Point Transfer Terminal Technology by TCAD Simulation Study
IEEE Transactions on Electron Devices, 2018Co-Authors: Baoxing Duan, Jianmei Lv, Xin Yang, Yintang YangAbstract:The novel SiC/Si heterojunction power MOSFET has been advanced to improve the tradeoff between the Breakdown voltage (BV) and specific on-resistance ( ${R}_{ \mathrm{ON},\textsf {sp}}$ ). The innovative terminal technology of Breakdown Point transfer has been applied to SiC/Si MOSFET, which transfers the Breakdown Point from the high electric field Points to the low electric field areas and improves the BV compared with the conventional Si power MOSFET. The results have been shown by technology computer aided design simulation that the BV has been improved for SiC/Si U-MOSFET due to PBT technology. The BV of the proposed SiC/Si U-MOSFET is increased to 358 V compared with the Si U-MOSFET of 107 V with the same device parameters. The simulated ${R}_{ \mathrm{ON},\textsf {sp}}$ of the SiC/Si U-MOSFET is $0.51~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 358 V, which is lower than that of $1.12~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 107 V for the conventional Si U-MOSFET. The important law is discovered that the high BV and low ${R}_{ \mathrm{ON},\textsf {sp}}$ can be obtained simultaneously for SiC/Si U-MOSFET when the depth of the trench oxide layer is increased, which cannot be taken into account in the conventional Si U-MOSFET. Therefore, the silicon and superjunction VDMOS (double-diffused MOSFET) limits had been broken for SiC/Si U-MOSFET. The influences of the different interface charge (acceptorlike and donorlike) have been analyzed for SiC/Si VDMOS and SiC/Si U-MOSFET.
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Novel SiC/Si Heterojunction Power MOSFET With Breakdown Point Transfer Terminal Technology by TCAD Simulation Study
IEEE Transactions on Electron Devices, 2018Co-Authors: Baoxing Duan, Jianmei Lv, Xin Yang, Yintang YangAbstract:The novel SiC/Si heterojunction power MOSFET has been advanced to improve the tradeoff between the Breakdown voltage (BV) and specific on-resistance (RON,sp). The innovative terminal technology of Breakdown Point transfer has been applied to SiC/Si MOSFET, which transfers the Breakdown Point from the high electric field Points to the low electric field areas and improves the BV compared with the conventional Si power MOSFET. The results have been shown by technology computer aided design simulation that the BV has been improved for SiC/Si U-MOSFET due to PBT technology. The BV of the proposed SiC/Si U-MOSFET is increased to 358 V compared with the Si U-MOSFET of 107 V with the same device parameters. The simulated RON,sp of the SiC/Si U-MOSFET is 0.51 mQ · cm2 with the BV of 358 V, which is lower than that of 1.12 mQ · cm2 with the BV of 107 V for the conventional Si U-MOSFET. The important law is discovered that the high BV and low RON,sp can be obtained simultaneously for SiC/Si U-MOSFET when the depth of the trench oxide layer is increased, which cannot be taken into account in the conventional Si U-MOSFET. Therefore, the silicon and superjunction VDMOS (double-diffused MOSFET) limits had been broken for SiC/Si U-MOSFET. The influences of the different interface charge (acceptorlike and donorlike) have been analyzed for SiC/Si VDMOS and SiC/Si U-MOSFET.
Jianmei Lv - One of the best experts on this subject based on the ideXlab platform.
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novel sic si heterojunction power mosfet with Breakdown Point transfer terminal technology by tcad simulation study
IEEE Transactions on Electron Devices, 2018Co-Authors: Baoxing Duan, Jianmei Lv, Xin Yang, Yintang YangAbstract:The novel SiC/Si heterojunction power MOSFET has been advanced to improve the tradeoff between the Breakdown voltage (BV) and specific on-resistance ( ${R}_{ \mathrm{ON},\textsf {sp}}$ ). The innovative terminal technology of Breakdown Point transfer has been applied to SiC/Si MOSFET, which transfers the Breakdown Point from the high electric field Points to the low electric field areas and improves the BV compared with the conventional Si power MOSFET. The results have been shown by technology computer aided design simulation that the BV has been improved for SiC/Si U-MOSFET due to PBT technology. The BV of the proposed SiC/Si U-MOSFET is increased to 358 V compared with the Si U-MOSFET of 107 V with the same device parameters. The simulated ${R}_{ \mathrm{ON},\textsf {sp}}$ of the SiC/Si U-MOSFET is $0.51~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 358 V, which is lower than that of $1.12~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 107 V for the conventional Si U-MOSFET. The important law is discovered that the high BV and low ${R}_{ \mathrm{ON},\textsf {sp}}$ can be obtained simultaneously for SiC/Si U-MOSFET when the depth of the trench oxide layer is increased, which cannot be taken into account in the conventional Si U-MOSFET. Therefore, the silicon and superjunction VDMOS (double-diffused MOSFET) limits had been broken for SiC/Si U-MOSFET. The influences of the different interface charge (acceptorlike and donorlike) have been analyzed for SiC/Si VDMOS and SiC/Si U-MOSFET.
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Novel SiC/Si Heterojunction Power MOSFET With Breakdown Point Transfer Terminal Technology by TCAD Simulation Study
IEEE Transactions on Electron Devices, 2018Co-Authors: Baoxing Duan, Jianmei Lv, Xin Yang, Yintang YangAbstract:The novel SiC/Si heterojunction power MOSFET has been advanced to improve the tradeoff between the Breakdown voltage (BV) and specific on-resistance ( ${R}_{ \mathrm{ON},\textsf {sp}}$ ). The innovative terminal technology of Breakdown Point transfer has been applied to SiC/Si MOSFET, which transfers the Breakdown Point from the high electric field Points to the low electric field areas and improves the BV compared with the conventional Si power MOSFET. The results have been shown by technology computer aided design simulation that the BV has been improved for SiC/Si U-MOSFET due to PBT technology. The BV of the proposed SiC/Si U-MOSFET is increased to 358 V compared with the Si U-MOSFET of 107 V with the same device parameters. The simulated ${R}_{ \mathrm{ON},\textsf {sp}}$ of the SiC/Si U-MOSFET is $0.51~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 358 V, which is lower than that of $1.12~\textsf {m}\Omega \cdot \textsf {cm}^{2}$ with the BV of 107 V for the conventional Si U-MOSFET. The important law is discovered that the high BV and low ${R}_{ \mathrm{ON},\textsf {sp}}$ can be obtained simultaneously for SiC/Si U-MOSFET when the depth of the trench oxide layer is increased, which cannot be taken into account in the conventional Si U-MOSFET. Therefore, the silicon and superjunction VDMOS (double-diffused MOSFET) limits had been broken for SiC/Si U-MOSFET. The influences of the different interface charge (acceptorlike and donorlike) have been analyzed for SiC/Si VDMOS and SiC/Si U-MOSFET.
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SiC/Si heterojunction VDMOS breaking silicon limit by Breakdown Point transfer technology
Micro & Nano Letters, 2018Co-Authors: Baoxing Duan, Jianmei Lv, Yihan Zhao, Yintang YangAbstract:An innovative semiconductor power vertical double-diffused MOSFET (VDMOS) is proposed for the first time with the SiC/Si heterojunction at the P-base and N-drift region (called for SiC/Si VDMOS), which improves the trade-off between the Breakdown voltage (BV) and specific on-resistance (Ron,sp). The `soft' Si material has been combined with the `hard' SiC material to play their own advantages for SiC/Si VDMOS. The Si has been formed above the 6H-SiC substrate to make up the channel and source electrode, and the 6H-SiC is underneath the P-base to form the SiC/Si heterojunction. The novel terminal technology of Breakdown Point transfer has been advanced for the first time and applied to SiC/Si VDMOS, which transfers the Breakdown Point of SiC/Si VDMOS and improve the BV compared with Si VDMOS. The simulated results have been shown that the optimised BV of proposed SiC/Si VDMOS is increased from 226 to 578 V compared with the conventional Si VDMOS with the same drift region length, which is because the Breakdown Point is transferred from the higher electric field area with the maximum curvature radius to the low electric field area. The simulated Ron,sp of SiC/Si VDMOS is 17.4 mΩ·cm2 with the BV of 578 V, which is lower than that of 41.01 mΩ·cm2 with the BV of 226V in Si VDMOS. The silicon limit relationship has been broken for SiC/Si VDMOS.
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sic si heterojunction vdmos breaking silicon limit by Breakdown Point transfer technology
Micro & Nano Letters, 2018Co-Authors: Baoxing Duan, Jianmei Lv, Yihan Zhao, Yintang YangAbstract:An innovative semiconductor power vertical double-diffused MOSFET (VDMOS) is proposed for the first time with the SiC/Si heterojunction at the P-base and N-drift region (called for SiC/Si VDMOS), which improves the trade-off between the Breakdown voltage ( BV ) and specific on-resistance ( R on,sp ). The `soft' Si material has been combined with the `hard' SiC material to play their own advantages for SiC/Si VDMOS. The Si has been formed above the 6H-SiC substrate to make up the channel and source electrode, and the 6H-SiC is underneath the P-base to form the SiC/Si heterojunction. The novel terminal technology of Breakdown Point transfer has been advanced for the first time and applied to SiC/Si VDMOS, which transfers the Breakdown Point of SiC/Si VDMOS and improve the BV compared with Si VDMOS. The simulated results have been shown that the optimised BV of proposed SiC/Si VDMOS is increased from 226 to 578 V compared with the conventional Si VDMOS with the same drift region length, which is because the Breakdown Point is transferred from the higher electric field area with the maximum curvature radius to the low electric field area. The simulated R on,sp of SiC/Si VDMOS is 17.4 mΩ·cm 2 with the BV of 578 V, which is lower than that of 41.01 mΩ·cm 2 with the BV of 226V in Si VDMOS. The silicon limit relationship has been broken for SiC/Si VDMOS.
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Novel SiC/Si Heterojunction Power MOSFET With Breakdown Point Transfer Terminal Technology by TCAD Simulation Study
IEEE Transactions on Electron Devices, 2018Co-Authors: Baoxing Duan, Jianmei Lv, Xin Yang, Yintang YangAbstract:The novel SiC/Si heterojunction power MOSFET has been advanced to improve the tradeoff between the Breakdown voltage (BV) and specific on-resistance (RON,sp). The innovative terminal technology of Breakdown Point transfer has been applied to SiC/Si MOSFET, which transfers the Breakdown Point from the high electric field Points to the low electric field areas and improves the BV compared with the conventional Si power MOSFET. The results have been shown by technology computer aided design simulation that the BV has been improved for SiC/Si U-MOSFET due to PBT technology. The BV of the proposed SiC/Si U-MOSFET is increased to 358 V compared with the Si U-MOSFET of 107 V with the same device parameters. The simulated RON,sp of the SiC/Si U-MOSFET is 0.51 mQ · cm2 with the BV of 358 V, which is lower than that of 1.12 mQ · cm2 with the BV of 107 V for the conventional Si U-MOSFET. The important law is discovered that the high BV and low RON,sp can be obtained simultaneously for SiC/Si U-MOSFET when the depth of the trench oxide layer is increased, which cannot be taken into account in the conventional Si U-MOSFET. Therefore, the silicon and superjunction VDMOS (double-diffused MOSFET) limits had been broken for SiC/Si U-MOSFET. The influences of the different interface charge (acceptorlike and donorlike) have been analyzed for SiC/Si VDMOS and SiC/Si U-MOSFET.
Claudia Becker - One of the best experts on this subject based on the ideXlab platform.
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RDELA—a Delaunay-triangulation-based, location and covariance estimator with high Breakdown Point
Statistics and Computing, 2013Co-Authors: Steffen Liebscher, Thomas Kirschstein, Claudia BeckerAbstract:We propose an approach that utilizes the Delaunay triangulation to identify a robust/outlier-free subsample. Given that the data structure of the non-outlying Points is convex (e.g. of elliptical shape), this subsample can then be used to give a robust estimation of location and scatter (by applying the classical mean and covariance). The estimators derived from our approach are shown to have a high Breakdown Point. In addition, we provide a diagnostic plot to expand the initial subset in a data-driven way, further increasing the estimators’ efficiency.
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rdela a delaunay triangulation based location and covariance estimator with high Breakdown Point
Statistics and Computing, 2013Co-Authors: Steffen Liebscher, Thomas Kirschstein, Claudia BeckerAbstract:We propose an approach that utilizes the Delaunay triangulation to identify a robust/outlier-free subsample. Given that the data structure of the non-outlying Points is convex (e.g. of elliptical shape), this subsample can then be used to give a robust estimation of location and scatter (by applying the classical mean and covariance). The estimators derived from our approach are shown to have a high Breakdown Point. In addition, we provide a diagnostic plot to expand the initial subset in a data-driven way, further increasing the estimators' efficiency.
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RDELA-a Delaunay-triangulation-based, location and covariance estimator with high Breakdown Point
Statistics and Computing, 2013Co-Authors: Steffen Liebscher, Thomas Kirschstein, Claudia BeckerAbstract:We propose an approach that utilizes the Delaunay triangulation to identify a robust/outlier-free subsample. Given that the data structure of the non-outlying Points is convex (e.g. of elliptical shape), this subsample can then be used to give a robust estimation of location and scatter (by applying the classical mean and covariance). The estimators derived from our approach are shown to have a high Breakdown Point. In addition, we provide a diagnostic plot to expand the initial subset in a data-driven way, further increasing the estimators' efficiency. © 2012 Springer Science+Business Media, LLC.
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the masking Breakdown Point of multivariate outlier identification rules
Journal of the American Statistical Association, 1999Co-Authors: Claudia Becker, Ursula GatherAbstract:Abstract In this article, we consider simultaneous outlier identification rules for multivariate data, generalizing the concept of so-called α outlier identifiers, as presented by Davies and Gather for the case of univariate samples. Such multivariate outlier identifiers are based on estimators of location and covariance. Therefore, it seems reasonable that characteristics of the estimators influence the behavior of outlier identifiers. Several authors mentioned that using estimators with low finite-sample Breakdown Point is not recommended for identifying outliers. To give a formal explanation, we investigate how the finite-sample Breakdown Points of estimators used in these identification rules influence the masking behavior of the rules.
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The Masking Breakdown Point of Multivariate Outlier Identification Rules
Journal of the American Statistical Association, 1999Co-Authors: Claudia Becker, Ursula GatherAbstract:Abstract In this article, we consider simultaneous outlier identification rules for multivariate data, generalizing the concept of so-called α outlier identifiers, as presented by Davies and Gather for the case of univariate samples. Such multivariate outlier identifiers are based on estimators of location and covariance. Therefore, it seems reasonable that characteristics of the estimators influence the behavior of outlier identifiers. Several authors mentioned that using estimators with low finite-sample Breakdown Point is not recommended for identifying outliers. To give a formal explanation, we investigate how the finite-sample Breakdown Points of estimators used in these identification rules influence the masking behavior of the rules. Abstract In this article, we consider simultaneous outlier identification rules for multivariate data, generalizing the concept of so-called α outlier identifiers, as presented by Davies and Gather for the case of univariate samples. Such multivariate outlier identifiers are based on estimators of location and covariance. Therefore, it seems reasonable that characteristics of the estimators influence the behavior of outlier identifiers. Several authors mentioned that using estimators with low finite-sample Breakdown Point is not recommended for identifying outliers. To give a formal explanation, we investigate how the finite-sample Breakdown Points of estimators used in these identification rules influence the masking behavior of the rules.
