The Experts below are selected from a list of 1767 Experts worldwide ranked by ideXlab platform
Kevin T. Kornegay - One of the best experts on this subject based on the ideXlab platform.
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A wide bandwidth sige Broadband Amplifier for 100 Gb/s Ethernet applications
2009 IEEE International Symposium on Circuits and Systems, 2009Co-Authors: Tonmoy S. Mukherjee, Duane C. Howard, John D. Cressler, Kevin T. KornegayAbstract:We present a low-voltage, low-power SiGe Broadband Amplifier with a bandwidth of 62 GHz, which is intended for use in 100 Gb/s Ethernet applications. The Amplifier consumes only 125 mW from a 2.5 V supply. To the authors' knowledge this is the lowest reported power for a non-distributed Amplifier with more than 60 GHz bandwidth in a SiGe process technology.
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ISCAS - A wide bandwidth sige Broadband Amplifier for 100 Gb/s Ethernet applications
2009 IEEE International Symposium on Circuits and Systems, 2009Co-Authors: Tonmoy S. Mukherjee, Duane C. Howard, John D. Cressler, Kevin T. KornegayAbstract:We present a low-voltage, low-power SiGe Broadband Amplifier with a bandwidth of 62 GHz, which is intended for use in 100 Gb/s Ethernet applications. The Amplifier consumes only 125 mW from a 2.5 V supply. To the authors' knowledge this is the lowest reported power for a non-distributed Amplifier with more than 60 GHz bandwidth in a SiGe process technology.
Tonmoy S. Mukherjee - One of the best experts on this subject based on the ideXlab platform.
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A wide bandwidth sige Broadband Amplifier for 100 Gb/s Ethernet applications
2009 IEEE International Symposium on Circuits and Systems, 2009Co-Authors: Tonmoy S. Mukherjee, Duane C. Howard, John D. Cressler, Kevin T. KornegayAbstract:We present a low-voltage, low-power SiGe Broadband Amplifier with a bandwidth of 62 GHz, which is intended for use in 100 Gb/s Ethernet applications. The Amplifier consumes only 125 mW from a 2.5 V supply. To the authors' knowledge this is the lowest reported power for a non-distributed Amplifier with more than 60 GHz bandwidth in a SiGe process technology.
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ISCAS - A wide bandwidth sige Broadband Amplifier for 100 Gb/s Ethernet applications
2009 IEEE International Symposium on Circuits and Systems, 2009Co-Authors: Tonmoy S. Mukherjee, Duane C. Howard, John D. Cressler, Kevin T. KornegayAbstract:We present a low-voltage, low-power SiGe Broadband Amplifier with a bandwidth of 62 GHz, which is intended for use in 100 Gb/s Ethernet applications. The Amplifier consumes only 125 mW from a 2.5 V supply. To the authors' knowledge this is the lowest reported power for a non-distributed Amplifier with more than 60 GHz bandwidth in a SiGe process technology.
James F. Buckwalter - One of the best experts on this subject based on the ideXlab platform.
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Staggered Gain for 100+ GHz Broadband Amplifiers
IEEE Journal of Solid-State Circuits, 2011Co-Authors: James F. BuckwalterAbstract:A Broadband Amplifier is realized with cascaded stagger-tuned stages that are equalized for high bandwidth and low gain ripple. The staggered frequency response is demonstrated to improve the transimpedance limit of active circuits. The staggered response is demonstrated with a Darlington feedback Amplifier and a constructive wave Amplifier, which achieves low group delay. The Broadband Amplifier is implemented in a 0.12-μm SiGe BiCMOS process and achieves a 3-dB bandwidth of 102 GHz. The gain is 10 dB with 1.5-dB gain-ripple and group-delay variation under ±6 ps over the entire 3-dB bandwidth. The chip occupies an area of 0.29 mm2 including the pads and consumes 73 mW from a 2-V supply.
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A DC-102GHz Broadband Amplifier in 0.12µm SiGe BiCMOS
2009 IEEE Radio Frequency Integrated Circuits Symposium, 2009Co-Authors: James F. BuckwalterAbstract:An ultra-wideband Amplifier scheme is realized with two cascaded stages that are equalized for high-bandwidth and low gain ripple. The Amplifier is implemented in a 0.12 mum SiGe BiCMOS process and achieves a 3 dB bandwidth of 102 GHz. The gain is 10 dB with less than 1.5 dB gain-ripple and group-delay variation under +/- 6 ps over the entire 3 dB bandwidth. The chip occupies an area of 0.29 mm2 including the pads and consumes 73 mW from a 2 V supply.
B.s. Virdee - One of the best experts on this subject based on the ideXlab platform.
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Cascaded single-stage distributed Amplifier using DPHEMT devices for multioctave performance
Analog Integrated Circuits and Signal Processing, 2010Co-Authors: B.s. VirdeeAbstract:This paper describes a multioctave (2–18 GHz) distributed Amplifier design using the concept of cascaded reactively terminated single-stage distributed Amplifier (CRTSSDA) configuration for EW applications. The concept of CRTSSDA is demonstrated to provide Broadband performance with high gain, reduced power consumption, circuit stability and superior power-added efficiency compared to conventional distributed Amplifiers using the same number of active devices. The Broadband Amplifier employing three-CRTSSDA is designed and fabricated using three different DPHEMT devices in the three respective stages of the design to further enhance the Amplifier’s efficiency performance. The Amplifier achieved an associated gain level above 26 dB with flatness of
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Data Modulator Driver Broadband Amplifier
2007 Asia-Pacific Microwave Conference, 2007Co-Authors: A.s. Virdee, B.s. VirdeeAbstract:Ultra-wideband Amplifiers covering kHz to GHz are critical components as data modulator drivers in fiber-optic transmission systems. This paper presents the design and development of a 30 kHz to 20 GHz data modulator driver Amplifier that supports transmission of data rates from 2.5 Gb/s to 20 Gb/s, and highlights the manufacturing implementation of the Amplifier.
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2-18 GHz ultra-Broadband Amplifier design using a cascaded reactively terminated single stage distributed concept
Electronics Letters, 1999Co-Authors: A.s. Virdee, B.s. VirdeeAbstract:A new ultra-Broadband Amplifier configuration which operates over the frequency range 2-18 GHz is presented. The concept of a cascaded reactively terminated single stage distributed Amplifier is shown to exhibit higher gain and superior efficiency performance compared with the conventional travelling Amplifier design approach.
B. S. Yarman - One of the best experts on this subject based on the ideXlab platform.
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A tunable inductance topology to realize frequency tunable matching networks and Amplifiers
2013 IEEE International Symposium on Circuits and Systems (ISCAS), 2013Co-Authors: Doğu Çağdaş Atilla, Tayfun Nesimoglu, Çağatay Aydın, Ramazan Köprü, B. S. YarmanAbstract:Coverage of commercial communication standards such as GSM, UMTS, Wi-Fi and Wi-Max within a single transceiver chip is one of the most desired properties by wireless communication manufacturers. In this regard, communication companies are keenly interested in the design of high power Amplifiers for Broadband cellular communications to achieve this coverage. In this work, design of Broadband tunable matching networks is investigated using Real Frequency Techniques. In practical applications, tunability is needed to compensate for the load impedance variations with environmental effects. In order to be able to work on sample structures, impedance transforming filters with proper topology are chosen and a Broadband tunable matching network with a tunability strategy is developed. Eventually a Broadband Amplifier has been designed using the tunable inductor concept.
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A frequency tunable Broadband Amplifier utilizing tunable capacitors and inductors
2013 Conference on Microwave Techniques (COMITE), 2013Co-Authors: Tayfun Nesimoglu, Çağatay Aydın, Doğu Çağdaş Atilla, B. S. YarmanAbstract:Software Defined Radio (SDR) technology aims employing commercial communication standards within a single transceiver unit. Therefore, the design of Broadband frequency tunable microwave components; particularly tunable Amplifiers have gained considerable importance in recent years. In this work, a tunable inductor topology is proposed, theoretically analyzed and simulated. By using tunable capacitors, tunable inductors were obtained and Broadband tunable matching networks are designed. Eventually a frequency tunable Broadband Amplifier covering 800-7500 MHz band has been realized.
