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Broadband Amplifier

The Experts below are selected from a list of 1767 Experts worldwide ranked by ideXlab platform

Kevin T. Kornegay – 1st expert on this subject based on the ideXlab platform

  • A wide bandwidth sige Broadband Amplifier for 100 Gb/s Ethernet applications
    2009 IEEE International Symposium on Circuits and Systems, 2009
    Co-Authors: Tonmoy S. Mukherjee, Duane C. Howard, John D. Cressler, Kevin T. Kornegay

    Abstract:

    We present a low-voltage, low-power SiGe Broadband Amplifier with a bandwidth of 62 GHz, which is intended for use in 100 Gb/s Ethernet applications. The Amplifier consumes only 125 mW from a 2.5 V supply. To the authors’ knowledge this is the lowest reported power for a non-distributed Amplifier with more than 60 GHz bandwidth in a SiGe process technology.

  • ISCAS – A wide bandwidth sige Broadband Amplifier for 100 Gb/s Ethernet applications
    2009 IEEE International Symposium on Circuits and Systems, 2009
    Co-Authors: Tonmoy S. Mukherjee, Duane C. Howard, John D. Cressler, Kevin T. Kornegay

    Abstract:

    We present a low-voltage, low-power SiGe Broadband Amplifier with a bandwidth of 62 GHz, which is intended for use in 100 Gb/s Ethernet applications. The Amplifier consumes only 125 mW from a 2.5 V supply. To the authors’ knowledge this is the lowest reported power for a non-distributed Amplifier with more than 60 GHz bandwidth in a SiGe process technology.

Tonmoy S. Mukherjee – 2nd expert on this subject based on the ideXlab platform

  • A wide bandwidth sige Broadband Amplifier for 100 Gb/s Ethernet applications
    2009 IEEE International Symposium on Circuits and Systems, 2009
    Co-Authors: Tonmoy S. Mukherjee, Duane C. Howard, John D. Cressler, Kevin T. Kornegay

    Abstract:

    We present a low-voltage, low-power SiGe Broadband Amplifier with a bandwidth of 62 GHz, which is intended for use in 100 Gb/s Ethernet applications. The Amplifier consumes only 125 mW from a 2.5 V supply. To the authors’ knowledge this is the lowest reported power for a non-distributed Amplifier with more than 60 GHz bandwidth in a SiGe process technology.

  • ISCAS – A wide bandwidth sige Broadband Amplifier for 100 Gb/s Ethernet applications
    2009 IEEE International Symposium on Circuits and Systems, 2009
    Co-Authors: Tonmoy S. Mukherjee, Duane C. Howard, John D. Cressler, Kevin T. Kornegay

    Abstract:

    We present a low-voltage, low-power SiGe Broadband Amplifier with a bandwidth of 62 GHz, which is intended for use in 100 Gb/s Ethernet applications. The Amplifier consumes only 125 mW from a 2.5 V supply. To the authors’ knowledge this is the lowest reported power for a non-distributed Amplifier with more than 60 GHz bandwidth in a SiGe process technology.

James F. Buckwalter – 3rd expert on this subject based on the ideXlab platform

  • Staggered Gain for 100+ GHz Broadband Amplifiers
    IEEE Journal of Solid-State Circuits, 2011
    Co-Authors: James F. Buckwalter

    Abstract:

    A Broadband Amplifier is realized with cascaded stagger-tuned stages that are equalized for high bandwidth and low gain ripple. The staggered frequency response is demonstrated to improve the transimpedance limit of active circuits. The staggered response is demonstrated with a Darlington feedback Amplifier and a constructive wave Amplifier, which achieves low group delay. The Broadband Amplifier is implemented in a 0.12-μm SiGe BiCMOS process and achieves a 3-dB bandwidth of 102 GHz. The gain is 10 dB with 1.5-dB gain-ripple and group-delay variation under ±6 ps over the entire 3-dB bandwidth. The chip occupies an area of 0.29 mm2 including the pads and consumes 73 mW from a 2-V supply.

  • A DC-102GHz Broadband Amplifier in 0.12µm SiGe BiCMOS
    2009 IEEE Radio Frequency Integrated Circuits Symposium, 2009
    Co-Authors: James F. Buckwalter

    Abstract:

    An ultra-wideband Amplifier scheme is realized with two cascaded stages that are equalized for high-bandwidth and low gain ripple. The Amplifier is implemented in a 0.12 mum SiGe BiCMOS process and achieves a 3 dB bandwidth of 102 GHz. The gain is 10 dB with less than 1.5 dB gain-ripple and group-delay variation under +/- 6 ps over the entire 3 dB bandwidth. The chip occupies an area of 0.29 mm2 including the pads and consumes 73 mW from a 2 V supply.