The Experts below are selected from a list of 30264 Experts worldwide ranked by ideXlab platform
Kazunari Kurita - One of the best experts on this subject based on the ideXlab platform.
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effect of dose and size on defect engineering in Carbon Cluster implanted silicon wafers
Japanese Journal of Applied Physics, 2018Co-Authors: Ryosuke Okuyama, Satoshi Shigematsu, Ryo Hirose, Ayumi Masada, Takeshi Kadono, Yoshihiro Koga, Hidehiko Okuda, Kazunari KuritaAbstract:Carbon-Cluster-ion-implanted defects were investigated by high-resolution cross-sectional transmission electron microscopy toward achieving high-performance CMOS image sensors. We revealed that implantation damage formation in the silicon wafer bulk significantly differs between Carbon-Cluster and monomer ions after implantation. After epitaxial growth, small and large defects were observed in the implanted region of Carbon Clusters. The electron diffraction pattern of both small and large defects exhibits that from bulk crystalline silicon in the implanted region. On the one hand, we assumed that the silicon carbide structure was not formed in the implanted region, and small defects formed because of the complex of Carbon and interstitial silicon. On the other hand, large defects were hypothesized to originate from the recrystallization of the amorphous layer formed by high-dose Carbon-Cluster implantation. These defects are considered to contribute to the powerful gettering capability required for high-performance CMOS image sensors.
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proximity gettering technology for advanced cmos image sensors using Carbon Cluster ion implantation technique a review
Physica Status Solidi (a), 2017Co-Authors: Kazunari Kurita, Ryo Hirose, Takeshi Kadono, Yoshihiro Koga, Ryousuke Okuyama, Satoshi Shigemastu, Ayumi Onakamasada, Hidehiko OkudaAbstract:A new technique is described for manufacturing advanced silicon wafers with the highest capability yet reported for gettering transition metallic, oxygen, and hydrogen impurities in CMOS image sensor fabrication processes. Carbon and hydrogen elements are localized in the projection range of the silicon wafer by implantation of ion Clusters from a hydroCarbon molecular gas source. Furthermore, these wafers can getter oxygen impurities out-diffused to device active regions from a Czochralski grown silicon wafer substrate to the Carbon Cluster ion projection range during heat treatment. Therefore, they can reduce the formation of transition metals and oxygen-related defects in the device active regions and improve electrical performance characteristics, such as the dark current, white spot defects, pn-junction leakage current, and image lag characteristics. The new technique enables the formation of high-gettering-capability sinks for transition metals, oxygen, and hydrogen impurities under device active regions of CMOS image sensors. The wafers formed by this technique have the potential to significantly improve electrical devices performance characteristics in advanced CMOS image sensors.
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Trapping and diffusion behaviour of hydrogen simulated with TCAD in projection range of Carbon-Cluster implanted silicon epitaxial wafers for CMOS image sensors
Physica Status Solidi (c), 2017Co-Authors: Ryosuke Okuyama, Satoshi Shigematsu, Ryo Hirose, Ayumi Masada, Takeshi Kadono, Yoshihiro Koga, Hidehiko Okuda, Kazunari KuritaAbstract:The trapping and diffusion behaviour of hydrogen in projection range of Carbon-Cluster was investigated by using a technology computer aided design (TCAD) simulation for high performance complementary metal–oxide–semiconductor (CMOS) image sensors. The hydrogen behaviour seemingly contributes to passivating the interface state density of the isolation region and process-induced defects during the CMOS image sensor fabrication process. This hydrogen behaviour was simulated by a TCAD simulation assuming a reaction model in which the Cluster of Carbon and silicon self-interstitial (Carbon-interstitial Cluster) binds to hydrogen. We found that the hydrogen profiles of TCAD agreed with the secondary ion mass spectrometry (SIMS) results after epitaxial growth and high-temperature heat-treatment, thus suggesting that the hydrogen in the projection range of the Carbon Cluster forms a binding state with the Carbon-interstitial Cluster. In addition, hydrogen gradually diffused out from the projection range of the Carbon-Cluster after high-temperature heat-treatment. Therefore, the hydrogen behaviour in projection range of the Carbon-Cluster is considered to contribute to the CMOS image sensor fabrication process to achieve high electrical performance.
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trapping and diffusion kinetic of hydrogen in Carbon Cluster ion implantation projected range in czochralski silicon wafers
Japanese Journal of Applied Physics, 2017Co-Authors: Ryosuke Okuyama, Ryo Hirose, Ayumi Masada, Takeshi Kadono, Yoshihiro Koga, Hidehiko Okuda, Kazunari KuritaAbstract:We investigated the diffusion behavior of hydrogen in a silicon wafer made by a Carbon-Cluster ion-implantation technique after heat treatment and silicon epitaxial growth. A hydrogen peak was observed after high-temperature heat treatment (>1000 °C) and silicon epitaxial growth by secondary ion mass spectrometry analysis. We also confirmed that the hydrogen peak concentration decreased after epitaxial growth upon additional heat treatment. Such a hydrogen diffusion behavior has not been reported. Thus, we derived the activation energy from the projected range of a Carbon Cluster, assuming only a dissociation reaction, and obtained an activation energy of 0.76 ± 0.04 eV. This value is extremely close to that for the diffusion of hydrogen molecules located at the tetrahedral interstitial site and hydrogen molecules dissociated from multivacancies. Therefore, we assume that the hydrogen in the Carbon-Cluster projected range diffuses in the molecular state, and hydrogen remaining in the projected range forms complexes of Carbon, oxygen, and vacancies.
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proximity gettering of c3h5 Carbon Cluster ion implanted silicon wafers for cmos image sensors gettering effects of transition metal oxygen and hydrogen impurities
Japanese Journal of Applied Physics, 2016Co-Authors: Kazunari Kurita, Ryo Hirose, Takeshi Kadono, Yoshihiro Koga, Ryousuke Okuyama, Ayumi Onakamasada, Hidehiko OkudaAbstract:A new technique is described for manufacturing silicon wafers with the highest capability yet reported for gettering transition metallic, oxygen, and hydrogen impurities in CMOS image sensor fabrication. It is demonstrated that this technique can implant wafers simultaneously with Carbon and hydrogen elements that form the projection range by using hydroCarbon compounds. Furthermore, these wafers can getter oxygen impurities out-diffused from the silicon substrate to the Carbon Cluster ion projection range during heat treatment. Therefore, they can reduce the formation of transition metals and oxygen-related defects in the device active regions and improve electrical performance characteristics, such as dark current and image lag characteristics. The new technique enables the formation of high-gettering-capability sinks for transition metals, oxygen, and hydrogen impurities under device active regions of CMOS image sensors. The wafers formed by this technique have the potential to significantly reduce dark current in advanced CMOS image sensors.
Hidehiko Okuda - One of the best experts on this subject based on the ideXlab platform.
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effect of dose and size on defect engineering in Carbon Cluster implanted silicon wafers
Japanese Journal of Applied Physics, 2018Co-Authors: Ryosuke Okuyama, Satoshi Shigematsu, Ryo Hirose, Ayumi Masada, Takeshi Kadono, Yoshihiro Koga, Hidehiko Okuda, Kazunari KuritaAbstract:Carbon-Cluster-ion-implanted defects were investigated by high-resolution cross-sectional transmission electron microscopy toward achieving high-performance CMOS image sensors. We revealed that implantation damage formation in the silicon wafer bulk significantly differs between Carbon-Cluster and monomer ions after implantation. After epitaxial growth, small and large defects were observed in the implanted region of Carbon Clusters. The electron diffraction pattern of both small and large defects exhibits that from bulk crystalline silicon in the implanted region. On the one hand, we assumed that the silicon carbide structure was not formed in the implanted region, and small defects formed because of the complex of Carbon and interstitial silicon. On the other hand, large defects were hypothesized to originate from the recrystallization of the amorphous layer formed by high-dose Carbon-Cluster implantation. These defects are considered to contribute to the powerful gettering capability required for high-performance CMOS image sensors.
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proximity gettering technology for advanced cmos image sensors using Carbon Cluster ion implantation technique a review
Physica Status Solidi (a), 2017Co-Authors: Kazunari Kurita, Ryo Hirose, Takeshi Kadono, Yoshihiro Koga, Ryousuke Okuyama, Satoshi Shigemastu, Ayumi Onakamasada, Hidehiko OkudaAbstract:A new technique is described for manufacturing advanced silicon wafers with the highest capability yet reported for gettering transition metallic, oxygen, and hydrogen impurities in CMOS image sensor fabrication processes. Carbon and hydrogen elements are localized in the projection range of the silicon wafer by implantation of ion Clusters from a hydroCarbon molecular gas source. Furthermore, these wafers can getter oxygen impurities out-diffused to device active regions from a Czochralski grown silicon wafer substrate to the Carbon Cluster ion projection range during heat treatment. Therefore, they can reduce the formation of transition metals and oxygen-related defects in the device active regions and improve electrical performance characteristics, such as the dark current, white spot defects, pn-junction leakage current, and image lag characteristics. The new technique enables the formation of high-gettering-capability sinks for transition metals, oxygen, and hydrogen impurities under device active regions of CMOS image sensors. The wafers formed by this technique have the potential to significantly improve electrical devices performance characteristics in advanced CMOS image sensors.
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Trapping and diffusion behaviour of hydrogen simulated with TCAD in projection range of Carbon-Cluster implanted silicon epitaxial wafers for CMOS image sensors
Physica Status Solidi (c), 2017Co-Authors: Ryosuke Okuyama, Satoshi Shigematsu, Ryo Hirose, Ayumi Masada, Takeshi Kadono, Yoshihiro Koga, Hidehiko Okuda, Kazunari KuritaAbstract:The trapping and diffusion behaviour of hydrogen in projection range of Carbon-Cluster was investigated by using a technology computer aided design (TCAD) simulation for high performance complementary metal–oxide–semiconductor (CMOS) image sensors. The hydrogen behaviour seemingly contributes to passivating the interface state density of the isolation region and process-induced defects during the CMOS image sensor fabrication process. This hydrogen behaviour was simulated by a TCAD simulation assuming a reaction model in which the Cluster of Carbon and silicon self-interstitial (Carbon-interstitial Cluster) binds to hydrogen. We found that the hydrogen profiles of TCAD agreed with the secondary ion mass spectrometry (SIMS) results after epitaxial growth and high-temperature heat-treatment, thus suggesting that the hydrogen in the projection range of the Carbon Cluster forms a binding state with the Carbon-interstitial Cluster. In addition, hydrogen gradually diffused out from the projection range of the Carbon-Cluster after high-temperature heat-treatment. Therefore, the hydrogen behaviour in projection range of the Carbon-Cluster is considered to contribute to the CMOS image sensor fabrication process to achieve high electrical performance.
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trapping and diffusion kinetic of hydrogen in Carbon Cluster ion implantation projected range in czochralski silicon wafers
Japanese Journal of Applied Physics, 2017Co-Authors: Ryosuke Okuyama, Ryo Hirose, Ayumi Masada, Takeshi Kadono, Yoshihiro Koga, Hidehiko Okuda, Kazunari KuritaAbstract:We investigated the diffusion behavior of hydrogen in a silicon wafer made by a Carbon-Cluster ion-implantation technique after heat treatment and silicon epitaxial growth. A hydrogen peak was observed after high-temperature heat treatment (>1000 °C) and silicon epitaxial growth by secondary ion mass spectrometry analysis. We also confirmed that the hydrogen peak concentration decreased after epitaxial growth upon additional heat treatment. Such a hydrogen diffusion behavior has not been reported. Thus, we derived the activation energy from the projected range of a Carbon Cluster, assuming only a dissociation reaction, and obtained an activation energy of 0.76 ± 0.04 eV. This value is extremely close to that for the diffusion of hydrogen molecules located at the tetrahedral interstitial site and hydrogen molecules dissociated from multivacancies. Therefore, we assume that the hydrogen in the Carbon-Cluster projected range diffuses in the molecular state, and hydrogen remaining in the projected range forms complexes of Carbon, oxygen, and vacancies.
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proximity gettering of c3h5 Carbon Cluster ion implanted silicon wafers for cmos image sensors gettering effects of transition metal oxygen and hydrogen impurities
Japanese Journal of Applied Physics, 2016Co-Authors: Kazunari Kurita, Ryo Hirose, Takeshi Kadono, Yoshihiro Koga, Ryousuke Okuyama, Ayumi Onakamasada, Hidehiko OkudaAbstract:A new technique is described for manufacturing silicon wafers with the highest capability yet reported for gettering transition metallic, oxygen, and hydrogen impurities in CMOS image sensor fabrication. It is demonstrated that this technique can implant wafers simultaneously with Carbon and hydrogen elements that form the projection range by using hydroCarbon compounds. Furthermore, these wafers can getter oxygen impurities out-diffused from the silicon substrate to the Carbon Cluster ion projection range during heat treatment. Therefore, they can reduce the formation of transition metals and oxygen-related defects in the device active regions and improve electrical performance characteristics, such as dark current and image lag characteristics. The new technique enables the formation of high-gettering-capability sinks for transition metals, oxygen, and hydrogen impurities under device active regions of CMOS image sensors. The wafers formed by this technique have the potential to significantly reduce dark current in advanced CMOS image sensors.
Ryo Hirose - One of the best experts on this subject based on the ideXlab platform.
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effect of dose and size on defect engineering in Carbon Cluster implanted silicon wafers
Japanese Journal of Applied Physics, 2018Co-Authors: Ryosuke Okuyama, Satoshi Shigematsu, Ryo Hirose, Ayumi Masada, Takeshi Kadono, Yoshihiro Koga, Hidehiko Okuda, Kazunari KuritaAbstract:Carbon-Cluster-ion-implanted defects were investigated by high-resolution cross-sectional transmission electron microscopy toward achieving high-performance CMOS image sensors. We revealed that implantation damage formation in the silicon wafer bulk significantly differs between Carbon-Cluster and monomer ions after implantation. After epitaxial growth, small and large defects were observed in the implanted region of Carbon Clusters. The electron diffraction pattern of both small and large defects exhibits that from bulk crystalline silicon in the implanted region. On the one hand, we assumed that the silicon carbide structure was not formed in the implanted region, and small defects formed because of the complex of Carbon and interstitial silicon. On the other hand, large defects were hypothesized to originate from the recrystallization of the amorphous layer formed by high-dose Carbon-Cluster implantation. These defects are considered to contribute to the powerful gettering capability required for high-performance CMOS image sensors.
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proximity gettering technology for advanced cmos image sensors using Carbon Cluster ion implantation technique a review
Physica Status Solidi (a), 2017Co-Authors: Kazunari Kurita, Ryo Hirose, Takeshi Kadono, Yoshihiro Koga, Ryousuke Okuyama, Satoshi Shigemastu, Ayumi Onakamasada, Hidehiko OkudaAbstract:A new technique is described for manufacturing advanced silicon wafers with the highest capability yet reported for gettering transition metallic, oxygen, and hydrogen impurities in CMOS image sensor fabrication processes. Carbon and hydrogen elements are localized in the projection range of the silicon wafer by implantation of ion Clusters from a hydroCarbon molecular gas source. Furthermore, these wafers can getter oxygen impurities out-diffused to device active regions from a Czochralski grown silicon wafer substrate to the Carbon Cluster ion projection range during heat treatment. Therefore, they can reduce the formation of transition metals and oxygen-related defects in the device active regions and improve electrical performance characteristics, such as the dark current, white spot defects, pn-junction leakage current, and image lag characteristics. The new technique enables the formation of high-gettering-capability sinks for transition metals, oxygen, and hydrogen impurities under device active regions of CMOS image sensors. The wafers formed by this technique have the potential to significantly improve electrical devices performance characteristics in advanced CMOS image sensors.
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Trapping and diffusion behaviour of hydrogen simulated with TCAD in projection range of Carbon-Cluster implanted silicon epitaxial wafers for CMOS image sensors
Physica Status Solidi (c), 2017Co-Authors: Ryosuke Okuyama, Satoshi Shigematsu, Ryo Hirose, Ayumi Masada, Takeshi Kadono, Yoshihiro Koga, Hidehiko Okuda, Kazunari KuritaAbstract:The trapping and diffusion behaviour of hydrogen in projection range of Carbon-Cluster was investigated by using a technology computer aided design (TCAD) simulation for high performance complementary metal–oxide–semiconductor (CMOS) image sensors. The hydrogen behaviour seemingly contributes to passivating the interface state density of the isolation region and process-induced defects during the CMOS image sensor fabrication process. This hydrogen behaviour was simulated by a TCAD simulation assuming a reaction model in which the Cluster of Carbon and silicon self-interstitial (Carbon-interstitial Cluster) binds to hydrogen. We found that the hydrogen profiles of TCAD agreed with the secondary ion mass spectrometry (SIMS) results after epitaxial growth and high-temperature heat-treatment, thus suggesting that the hydrogen in the projection range of the Carbon Cluster forms a binding state with the Carbon-interstitial Cluster. In addition, hydrogen gradually diffused out from the projection range of the Carbon-Cluster after high-temperature heat-treatment. Therefore, the hydrogen behaviour in projection range of the Carbon-Cluster is considered to contribute to the CMOS image sensor fabrication process to achieve high electrical performance.
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trapping and diffusion kinetic of hydrogen in Carbon Cluster ion implantation projected range in czochralski silicon wafers
Japanese Journal of Applied Physics, 2017Co-Authors: Ryosuke Okuyama, Ryo Hirose, Ayumi Masada, Takeshi Kadono, Yoshihiro Koga, Hidehiko Okuda, Kazunari KuritaAbstract:We investigated the diffusion behavior of hydrogen in a silicon wafer made by a Carbon-Cluster ion-implantation technique after heat treatment and silicon epitaxial growth. A hydrogen peak was observed after high-temperature heat treatment (>1000 °C) and silicon epitaxial growth by secondary ion mass spectrometry analysis. We also confirmed that the hydrogen peak concentration decreased after epitaxial growth upon additional heat treatment. Such a hydrogen diffusion behavior has not been reported. Thus, we derived the activation energy from the projected range of a Carbon Cluster, assuming only a dissociation reaction, and obtained an activation energy of 0.76 ± 0.04 eV. This value is extremely close to that for the diffusion of hydrogen molecules located at the tetrahedral interstitial site and hydrogen molecules dissociated from multivacancies. Therefore, we assume that the hydrogen in the Carbon-Cluster projected range diffuses in the molecular state, and hydrogen remaining in the projected range forms complexes of Carbon, oxygen, and vacancies.
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proximity gettering of c3h5 Carbon Cluster ion implanted silicon wafers for cmos image sensors gettering effects of transition metal oxygen and hydrogen impurities
Japanese Journal of Applied Physics, 2016Co-Authors: Kazunari Kurita, Ryo Hirose, Takeshi Kadono, Yoshihiro Koga, Ryousuke Okuyama, Ayumi Onakamasada, Hidehiko OkudaAbstract:A new technique is described for manufacturing silicon wafers with the highest capability yet reported for gettering transition metallic, oxygen, and hydrogen impurities in CMOS image sensor fabrication. It is demonstrated that this technique can implant wafers simultaneously with Carbon and hydrogen elements that form the projection range by using hydroCarbon compounds. Furthermore, these wafers can getter oxygen impurities out-diffused from the silicon substrate to the Carbon Cluster ion projection range during heat treatment. Therefore, they can reduce the formation of transition metals and oxygen-related defects in the device active regions and improve electrical performance characteristics, such as dark current and image lag characteristics. The new technique enables the formation of high-gettering-capability sinks for transition metals, oxygen, and hydrogen impurities under device active regions of CMOS image sensors. The wafers formed by this technique have the potential to significantly reduce dark current in advanced CMOS image sensors.
Takeshi Kadono - One of the best experts on this subject based on the ideXlab platform.
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effect of dose and size on defect engineering in Carbon Cluster implanted silicon wafers
Japanese Journal of Applied Physics, 2018Co-Authors: Ryosuke Okuyama, Satoshi Shigematsu, Ryo Hirose, Ayumi Masada, Takeshi Kadono, Yoshihiro Koga, Hidehiko Okuda, Kazunari KuritaAbstract:Carbon-Cluster-ion-implanted defects were investigated by high-resolution cross-sectional transmission electron microscopy toward achieving high-performance CMOS image sensors. We revealed that implantation damage formation in the silicon wafer bulk significantly differs between Carbon-Cluster and monomer ions after implantation. After epitaxial growth, small and large defects were observed in the implanted region of Carbon Clusters. The electron diffraction pattern of both small and large defects exhibits that from bulk crystalline silicon in the implanted region. On the one hand, we assumed that the silicon carbide structure was not formed in the implanted region, and small defects formed because of the complex of Carbon and interstitial silicon. On the other hand, large defects were hypothesized to originate from the recrystallization of the amorphous layer formed by high-dose Carbon-Cluster implantation. These defects are considered to contribute to the powerful gettering capability required for high-performance CMOS image sensors.
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proximity gettering technology for advanced cmos image sensors using Carbon Cluster ion implantation technique a review
Physica Status Solidi (a), 2017Co-Authors: Kazunari Kurita, Ryo Hirose, Takeshi Kadono, Yoshihiro Koga, Ryousuke Okuyama, Satoshi Shigemastu, Ayumi Onakamasada, Hidehiko OkudaAbstract:A new technique is described for manufacturing advanced silicon wafers with the highest capability yet reported for gettering transition metallic, oxygen, and hydrogen impurities in CMOS image sensor fabrication processes. Carbon and hydrogen elements are localized in the projection range of the silicon wafer by implantation of ion Clusters from a hydroCarbon molecular gas source. Furthermore, these wafers can getter oxygen impurities out-diffused to device active regions from a Czochralski grown silicon wafer substrate to the Carbon Cluster ion projection range during heat treatment. Therefore, they can reduce the formation of transition metals and oxygen-related defects in the device active regions and improve electrical performance characteristics, such as the dark current, white spot defects, pn-junction leakage current, and image lag characteristics. The new technique enables the formation of high-gettering-capability sinks for transition metals, oxygen, and hydrogen impurities under device active regions of CMOS image sensors. The wafers formed by this technique have the potential to significantly improve electrical devices performance characteristics in advanced CMOS image sensors.
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Trapping and diffusion behaviour of hydrogen simulated with TCAD in projection range of Carbon-Cluster implanted silicon epitaxial wafers for CMOS image sensors
Physica Status Solidi (c), 2017Co-Authors: Ryosuke Okuyama, Satoshi Shigematsu, Ryo Hirose, Ayumi Masada, Takeshi Kadono, Yoshihiro Koga, Hidehiko Okuda, Kazunari KuritaAbstract:The trapping and diffusion behaviour of hydrogen in projection range of Carbon-Cluster was investigated by using a technology computer aided design (TCAD) simulation for high performance complementary metal–oxide–semiconductor (CMOS) image sensors. The hydrogen behaviour seemingly contributes to passivating the interface state density of the isolation region and process-induced defects during the CMOS image sensor fabrication process. This hydrogen behaviour was simulated by a TCAD simulation assuming a reaction model in which the Cluster of Carbon and silicon self-interstitial (Carbon-interstitial Cluster) binds to hydrogen. We found that the hydrogen profiles of TCAD agreed with the secondary ion mass spectrometry (SIMS) results after epitaxial growth and high-temperature heat-treatment, thus suggesting that the hydrogen in the projection range of the Carbon Cluster forms a binding state with the Carbon-interstitial Cluster. In addition, hydrogen gradually diffused out from the projection range of the Carbon-Cluster after high-temperature heat-treatment. Therefore, the hydrogen behaviour in projection range of the Carbon-Cluster is considered to contribute to the CMOS image sensor fabrication process to achieve high electrical performance.
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trapping and diffusion kinetic of hydrogen in Carbon Cluster ion implantation projected range in czochralski silicon wafers
Japanese Journal of Applied Physics, 2017Co-Authors: Ryosuke Okuyama, Ryo Hirose, Ayumi Masada, Takeshi Kadono, Yoshihiro Koga, Hidehiko Okuda, Kazunari KuritaAbstract:We investigated the diffusion behavior of hydrogen in a silicon wafer made by a Carbon-Cluster ion-implantation technique after heat treatment and silicon epitaxial growth. A hydrogen peak was observed after high-temperature heat treatment (>1000 °C) and silicon epitaxial growth by secondary ion mass spectrometry analysis. We also confirmed that the hydrogen peak concentration decreased after epitaxial growth upon additional heat treatment. Such a hydrogen diffusion behavior has not been reported. Thus, we derived the activation energy from the projected range of a Carbon Cluster, assuming only a dissociation reaction, and obtained an activation energy of 0.76 ± 0.04 eV. This value is extremely close to that for the diffusion of hydrogen molecules located at the tetrahedral interstitial site and hydrogen molecules dissociated from multivacancies. Therefore, we assume that the hydrogen in the Carbon-Cluster projected range diffuses in the molecular state, and hydrogen remaining in the projected range forms complexes of Carbon, oxygen, and vacancies.
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proximity gettering of c3h5 Carbon Cluster ion implanted silicon wafers for cmos image sensors gettering effects of transition metal oxygen and hydrogen impurities
Japanese Journal of Applied Physics, 2016Co-Authors: Kazunari Kurita, Ryo Hirose, Takeshi Kadono, Yoshihiro Koga, Ryousuke Okuyama, Ayumi Onakamasada, Hidehiko OkudaAbstract:A new technique is described for manufacturing silicon wafers with the highest capability yet reported for gettering transition metallic, oxygen, and hydrogen impurities in CMOS image sensor fabrication. It is demonstrated that this technique can implant wafers simultaneously with Carbon and hydrogen elements that form the projection range by using hydroCarbon compounds. Furthermore, these wafers can getter oxygen impurities out-diffused from the silicon substrate to the Carbon Cluster ion projection range during heat treatment. Therefore, they can reduce the formation of transition metals and oxygen-related defects in the device active regions and improve electrical performance characteristics, such as dark current and image lag characteristics. The new technique enables the formation of high-gettering-capability sinks for transition metals, oxygen, and hydrogen impurities under device active regions of CMOS image sensors. The wafers formed by this technique have the potential to significantly reduce dark current in advanced CMOS image sensors.
Yoshihiro Koga - One of the best experts on this subject based on the ideXlab platform.
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effect of dose and size on defect engineering in Carbon Cluster implanted silicon wafers
Japanese Journal of Applied Physics, 2018Co-Authors: Ryosuke Okuyama, Satoshi Shigematsu, Ryo Hirose, Ayumi Masada, Takeshi Kadono, Yoshihiro Koga, Hidehiko Okuda, Kazunari KuritaAbstract:Carbon-Cluster-ion-implanted defects were investigated by high-resolution cross-sectional transmission electron microscopy toward achieving high-performance CMOS image sensors. We revealed that implantation damage formation in the silicon wafer bulk significantly differs between Carbon-Cluster and monomer ions after implantation. After epitaxial growth, small and large defects were observed in the implanted region of Carbon Clusters. The electron diffraction pattern of both small and large defects exhibits that from bulk crystalline silicon in the implanted region. On the one hand, we assumed that the silicon carbide structure was not formed in the implanted region, and small defects formed because of the complex of Carbon and interstitial silicon. On the other hand, large defects were hypothesized to originate from the recrystallization of the amorphous layer formed by high-dose Carbon-Cluster implantation. These defects are considered to contribute to the powerful gettering capability required for high-performance CMOS image sensors.
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proximity gettering technology for advanced cmos image sensors using Carbon Cluster ion implantation technique a review
Physica Status Solidi (a), 2017Co-Authors: Kazunari Kurita, Ryo Hirose, Takeshi Kadono, Yoshihiro Koga, Ryousuke Okuyama, Satoshi Shigemastu, Ayumi Onakamasada, Hidehiko OkudaAbstract:A new technique is described for manufacturing advanced silicon wafers with the highest capability yet reported for gettering transition metallic, oxygen, and hydrogen impurities in CMOS image sensor fabrication processes. Carbon and hydrogen elements are localized in the projection range of the silicon wafer by implantation of ion Clusters from a hydroCarbon molecular gas source. Furthermore, these wafers can getter oxygen impurities out-diffused to device active regions from a Czochralski grown silicon wafer substrate to the Carbon Cluster ion projection range during heat treatment. Therefore, they can reduce the formation of transition metals and oxygen-related defects in the device active regions and improve electrical performance characteristics, such as the dark current, white spot defects, pn-junction leakage current, and image lag characteristics. The new technique enables the formation of high-gettering-capability sinks for transition metals, oxygen, and hydrogen impurities under device active regions of CMOS image sensors. The wafers formed by this technique have the potential to significantly improve electrical devices performance characteristics in advanced CMOS image sensors.
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Trapping and diffusion behaviour of hydrogen simulated with TCAD in projection range of Carbon-Cluster implanted silicon epitaxial wafers for CMOS image sensors
Physica Status Solidi (c), 2017Co-Authors: Ryosuke Okuyama, Satoshi Shigematsu, Ryo Hirose, Ayumi Masada, Takeshi Kadono, Yoshihiro Koga, Hidehiko Okuda, Kazunari KuritaAbstract:The trapping and diffusion behaviour of hydrogen in projection range of Carbon-Cluster was investigated by using a technology computer aided design (TCAD) simulation for high performance complementary metal–oxide–semiconductor (CMOS) image sensors. The hydrogen behaviour seemingly contributes to passivating the interface state density of the isolation region and process-induced defects during the CMOS image sensor fabrication process. This hydrogen behaviour was simulated by a TCAD simulation assuming a reaction model in which the Cluster of Carbon and silicon self-interstitial (Carbon-interstitial Cluster) binds to hydrogen. We found that the hydrogen profiles of TCAD agreed with the secondary ion mass spectrometry (SIMS) results after epitaxial growth and high-temperature heat-treatment, thus suggesting that the hydrogen in the projection range of the Carbon Cluster forms a binding state with the Carbon-interstitial Cluster. In addition, hydrogen gradually diffused out from the projection range of the Carbon-Cluster after high-temperature heat-treatment. Therefore, the hydrogen behaviour in projection range of the Carbon-Cluster is considered to contribute to the CMOS image sensor fabrication process to achieve high electrical performance.
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trapping and diffusion kinetic of hydrogen in Carbon Cluster ion implantation projected range in czochralski silicon wafers
Japanese Journal of Applied Physics, 2017Co-Authors: Ryosuke Okuyama, Ryo Hirose, Ayumi Masada, Takeshi Kadono, Yoshihiro Koga, Hidehiko Okuda, Kazunari KuritaAbstract:We investigated the diffusion behavior of hydrogen in a silicon wafer made by a Carbon-Cluster ion-implantation technique after heat treatment and silicon epitaxial growth. A hydrogen peak was observed after high-temperature heat treatment (>1000 °C) and silicon epitaxial growth by secondary ion mass spectrometry analysis. We also confirmed that the hydrogen peak concentration decreased after epitaxial growth upon additional heat treatment. Such a hydrogen diffusion behavior has not been reported. Thus, we derived the activation energy from the projected range of a Carbon Cluster, assuming only a dissociation reaction, and obtained an activation energy of 0.76 ± 0.04 eV. This value is extremely close to that for the diffusion of hydrogen molecules located at the tetrahedral interstitial site and hydrogen molecules dissociated from multivacancies. Therefore, we assume that the hydrogen in the Carbon-Cluster projected range diffuses in the molecular state, and hydrogen remaining in the projected range forms complexes of Carbon, oxygen, and vacancies.
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proximity gettering of c3h5 Carbon Cluster ion implanted silicon wafers for cmos image sensors gettering effects of transition metal oxygen and hydrogen impurities
Japanese Journal of Applied Physics, 2016Co-Authors: Kazunari Kurita, Ryo Hirose, Takeshi Kadono, Yoshihiro Koga, Ryousuke Okuyama, Ayumi Onakamasada, Hidehiko OkudaAbstract:A new technique is described for manufacturing silicon wafers with the highest capability yet reported for gettering transition metallic, oxygen, and hydrogen impurities in CMOS image sensor fabrication. It is demonstrated that this technique can implant wafers simultaneously with Carbon and hydrogen elements that form the projection range by using hydroCarbon compounds. Furthermore, these wafers can getter oxygen impurities out-diffused from the silicon substrate to the Carbon Cluster ion projection range during heat treatment. Therefore, they can reduce the formation of transition metals and oxygen-related defects in the device active regions and improve electrical performance characteristics, such as dark current and image lag characteristics. The new technique enables the formation of high-gettering-capability sinks for transition metals, oxygen, and hydrogen impurities under device active regions of CMOS image sensors. The wafers formed by this technique have the potential to significantly reduce dark current in advanced CMOS image sensors.