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Susanne Stemmer - One of the best experts on this subject based on the ideXlab platform.
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scaled zro2 dielectrics for in0 53ga0 47as gate stacks with low interface trap densities
Applied Physics Letters, 2014Co-Authors: Varistha Chobpattana, Thomas E Mates, Jack Y Zhang, Susanne StemmerAbstract:ZrO2 dielectrics were grown on n-In0.53Ga0.47As channels by atomic layer deposition, after employing an in-situ cyclic nitrogen plasma/trimethylaluminum surface Cleaning Procedure. By scaling the ZrO2 thickness, accumulation capacitance densities of 3.5 μF/cm2 at 1 MHz are achieved. The midgap interface trap density is estimated to be in the 1012 cm−2 eV−1 range. Using x-ray photoelectron spectroscopy, it was shown that the interface contained the oxides of In, Ga, and Al, but no As-oxides or As-As bonds within the detection limit. The results allow for insights into the effective passivation of these interfaces.
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Influence of plasma-based in-situ surface Cleaning Procedures on HfO2/In0.53Ga0.47As gate stack properties
Journal of Applied Physics, 2013Co-Authors: Varistha Chobpattana, Thomas E Mates, Jack Y Zhang, William J. Mitchell, Susanne StemmerAbstract:We report on the influence of variations in the process parameters of an in-situ surface Cleaning Procedure, consisting of alternating cycles of nitrogen plasma and trimethylaluminum dosing, on the interface trap density of highly scaled HfO2 gate dielectrics deposited on n-In0.53Ga0.47As by atomic layer deposition. We discuss the interface chemistry of stacks resulting from the pre-deposition exposure to nitrogen plasma/trimethylaluminum cycles. Measurements of interface trap densities, interface chemistry, and surface morphology show that variations in the Cleaning process have a large effect on nucleation and surface coverage, which in turn are crucial for achieving low interface state densities.
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nitrogen passivated dielectric ingaas interfaces with sub nm equivalent oxide thickness and low interface trap densities
Applied Physics Letters, 2013Co-Authors: Varistha Chobpattana, Roman Engelherbert, Chengying Huang, Susanne StemmerAbstract:We report on the electrical characteristics of HfO2 and HfO2/Al2O3 gate dielectrics deposited on n-In0.53Ga0.47As by atomic layer deposition, after in-situ hydrogen or nitrogen plasma surface Cleaning Procedures, respectively. It is shown that alternating cycles of nitrogen plasma and trimethylaluminum prior to growth allow for highly scaled dielectrics with equivalent oxide thicknesses down to 0.6 nm and interface trap densities that are below 2.5 × 1012 cm−2 eV−1 near midgap. It is shown that the benefits of the nitrogen plasma surface Cleaning Procedure are independent of the specific dielectric.
Adriano Damian - One of the best experts on this subject based on the ideXlab platform.
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skin absorption of inorganic lead pbo and the effect of skin cleansers
Journal of Occupational and Environmental Medicine, 2006Co-Authors: Francesca Larese Filon, Gianpiero Adami, Giovanni Maina, Mark Boeniger, Paolo Spinelli, Adriano DamianAbstract:Objective: The aim of this study was to investigate the percutaneous penetration of lead oxide (PbO) powder and the effect of rapid skin decontamination with two different detergents. Methods: Franz cells were used to study in vitro PbO skin penetration through human skin during a 24-hour period. The tests were performed without or with decontamination using either Ivory Liquid soap or a new experimental cleanser 30 minutes after the start of exposure. Results: We confirm that PbO can pass through the skin with a median penetration of 2.9 ng/cm 2 (25–75th percentiles 0.35–6). The Cleaning Procedure using
Varistha Chobpattana - One of the best experts on this subject based on the ideXlab platform.
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scaled zro2 dielectrics for in0 53ga0 47as gate stacks with low interface trap densities
Applied Physics Letters, 2014Co-Authors: Varistha Chobpattana, Thomas E Mates, Jack Y Zhang, Susanne StemmerAbstract:ZrO2 dielectrics were grown on n-In0.53Ga0.47As channels by atomic layer deposition, after employing an in-situ cyclic nitrogen plasma/trimethylaluminum surface Cleaning Procedure. By scaling the ZrO2 thickness, accumulation capacitance densities of 3.5 μF/cm2 at 1 MHz are achieved. The midgap interface trap density is estimated to be in the 1012 cm−2 eV−1 range. Using x-ray photoelectron spectroscopy, it was shown that the interface contained the oxides of In, Ga, and Al, but no As-oxides or As-As bonds within the detection limit. The results allow for insights into the effective passivation of these interfaces.
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Influence of plasma-based in-situ surface Cleaning Procedures on HfO2/In0.53Ga0.47As gate stack properties
Journal of Applied Physics, 2013Co-Authors: Varistha Chobpattana, Thomas E Mates, Jack Y Zhang, William J. Mitchell, Susanne StemmerAbstract:We report on the influence of variations in the process parameters of an in-situ surface Cleaning Procedure, consisting of alternating cycles of nitrogen plasma and trimethylaluminum dosing, on the interface trap density of highly scaled HfO2 gate dielectrics deposited on n-In0.53Ga0.47As by atomic layer deposition. We discuss the interface chemistry of stacks resulting from the pre-deposition exposure to nitrogen plasma/trimethylaluminum cycles. Measurements of interface trap densities, interface chemistry, and surface morphology show that variations in the Cleaning process have a large effect on nucleation and surface coverage, which in turn are crucial for achieving low interface state densities.
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nitrogen passivated dielectric ingaas interfaces with sub nm equivalent oxide thickness and low interface trap densities
Applied Physics Letters, 2013Co-Authors: Varistha Chobpattana, Roman Engelherbert, Chengying Huang, Susanne StemmerAbstract:We report on the electrical characteristics of HfO2 and HfO2/Al2O3 gate dielectrics deposited on n-In0.53Ga0.47As by atomic layer deposition, after in-situ hydrogen or nitrogen plasma surface Cleaning Procedures, respectively. It is shown that alternating cycles of nitrogen plasma and trimethylaluminum prior to growth allow for highly scaled dielectrics with equivalent oxide thicknesses down to 0.6 nm and interface trap densities that are below 2.5 × 1012 cm−2 eV−1 near midgap. It is shown that the benefits of the nitrogen plasma surface Cleaning Procedure are independent of the specific dielectric.
M C Ortiz - One of the best experts on this subject based on the ideXlab platform.
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effect of the Cleaning Procedure of tenax on its reuse in the determination of plasticizers after migration by gas chromatography mass spectrometry
Talanta, 2018Co-Authors: Laura Rubio Rubio, L A Sarabia, M C OrtizAbstract:Abstract This paper presents the simultaneous determination of a UV stabilizer (benzophenone (BP)) together with four plasticizers (butylated hydroxytoluene (BHT), diisobutyl phthalate (DiBP), bis(2-ethylhexyl) adipate (DEHA) and diisononyl phthalate (DiNP)) in Tenax by gas chromatography/mass spectrometry and PARAFAC, using DiBP-d4 as internal standard. Regulation (EU) No. 10/2011 establishes Tenax as food simulant E for testing specific migration from plastics into dry foodstuffs. This simulant must be cleaned before its use to eliminate impurities. Tenax is expensive, so its reuse would save costs. A two-way ANOVA was used to study some parameters affecting the Cleaning and the extraction of Tenax. The most adequate conditions were chosen taking the values of the coefficient of variation and the average recovery rates of spiked Tenax samples into account. A study to determine if some analytes remain in Tenax when it is reused and the effect that the Cleaning Procedure may have in the adsorption capability of Tenax was proposed. This study led to the conclusion that Tenax could not be reused in this multiresidue determination. All the analytes were unequivocally identified in all the stages of this work and trueness was verified at a 95% confidence level in all cases. A calibration based on PARAFAC provided the following values of capability of detection (CCβ): 2.28 µg L−1 for BHT, 10.57 µg L−1 for BP, 7.87 µg L−1 for DiBP, 3.04 µg L−1 for DEHA and 124.8 µg L−1 for DiNP, with the probabilities of false positive and false negative fixed at 0.05. The migration of the analytes from a printed paper sample into Tenax was also studied. The presence of BHT in the food simulant was confirmed and the amount released of this analyte from the paper was 2.56 μg L−1.
Sylvie Roke - One of the best experts on this subject based on the ideXlab platform.
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on the stability and necessary electrophoretic mobility of bare oil nanodroplets in water
Journal of Chemical Physics, 2020Co-Authors: Saranya Pullanchery, Sergey Kulik, Halil I Okur, H B De Aguiar, Sylvie RokeAbstract:Hydrophobic oil droplets, particles, and air bubbles can be dispersed in water as kinetically stabilized dispersions. It has been established since the 19th century that such objects harbor a negative electrostatic potential roughly twice larger than the thermal energy. The source of this charge continues to be one of the core observations in relation to hydrophobicity, and its molecular explanation is still debated. What is clear though is that the stabilizing interaction in these systems is understood in terms of electrostatic repulsion via Derjaguin, Landau, Verwey, and Overbeek theory. Recent work [A. P. Carpenter et al., Proc. Natl. Acad. Sci. U. S. A. 116, 9214 (2019)] has added another element into the discussion, reporting the creation of bare near-zero charged droplets of oil in neat water that are stable for several days. Key to the creation of the droplets is a rigorous glassware Cleaning Procedure. Here, we investigate these conclusions and show that the Cleaning Procedure of glassware has no influence on the electrophoretic mobility of the droplets and that oil droplets with near-zero charge are unstable. We provide an alternative possible explanation for the observations involving glass surface chemistry.