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C.h. Bhosale - One of the best experts on this subject based on the ideXlab platform.
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Effect of concentration of Complexing Agent (tartaric acid) on the properties of spray deposited Sb2S3 thin films
Materials Chemistry and Physics, 2003Co-Authors: S. R. Gadakh, C.h. BhosaleAbstract:Abstract Antimony trisulphide thin films have been prepared by a spray pyrolysis technique using various concentrations of Complexing Agent (tartaric acid) in the spray solution. These films are characterized for structural, electrical and optical properties. The results of XRD studies reveal that the films are polycrystalline. The crystallinity and direction of growth is found to be a function of the concentration of Complexing Agent. It is found that resistivity varies with the concentration of Complexing Agent. The resistivity of the films is 106–107 Ω cm−1. The band gap energy also varies with the concentration of the Complexing Agent from 1.92 to 2.13 eV.
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Effect of concentration of Complexing Agent (tartaric acid) on spray-deposited Bi2S3 films
Materials Research Bulletin, 2000Co-Authors: S. R. Gadakh, C.h. BhosaleAbstract:Abstract Bi 2 S 3 thin films were prepared without Complexing Agent and with different concentrations of tartaric acid as a Complexing Agent by a spray pyrolysis technique. The effect of concentration of the Complexing Agent on the properties of Bi 2 S 3 thin films was studied by characterizing the films by X-ray diffraction, scanning electron microscopy, optical absorption, and dark electrical resistivity measurement techniques. These studies revealed that all films were polycrystalline. The band gap energy for films grown without Complexing Agent was observed to be 1.72 eV. However, the band gap energy for different concentrations of Complexing Agent was observed to be 2.0 eV. The electrical resistivity of the films with Complexing Agent was higher than that of the film prepared without Complexing Agent. The electrical resistivity increased with increasing concentration of Complexing Agent.
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Effect of concentration of Complexing Agent on the spray deposited Bi2S3 thin films
Materials Chemistry and Physics, 2000Co-Authors: S. R. Gadakh, C.h. BhosaleAbstract:Abstract Bi2S3 thin films have been prepared without Complexing Agent and with different concentrations of ethylene diamine tetra acetic acid (EDTA) as Complexing Agent by a spray pyrolysis technique. The effect of concentrations of Complexing Agent on the properties of Bi2S3 thin films is studied by characterizing the films by X-ray diffraction, scanning electron microscopy (SEM), optical absorption and dark electrical resistivity measurement techniques. These studies reveal that all films are polycrystalline. The band gap energy for as deposited films is observed to be 1.72 eV. However, the band gap energy is observed to be 2.0 eV for different concentrations of Complexing Agent. The electrical resistivity of the films with Complexing Agent is higher than that of the films prepared without Complexing Agent. The electrical resistivity also depends upon the concentration of the Complexing Agent.
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Effect of Complexing Agent on the properties of spray-deposited Bi2S3 thin films
Materials Chemistry and Physics, 1998Co-Authors: S. R. Gadakh, V. V. Killedar, Chandrakant D. Lokhande, C.h. BhosaleAbstract:Abstract Bi2S3 thin films are deposited by a spray pyrolysis technique using oxalic acid as a Complexing Agent. The films are characterized for their structural, optical and electrical properties. The results are compared with the properties of Bi2S3 thin films produced by the same technique without using the Complexing Agent. The XRD studies reveal that the growth of the film in a particular direction can be obtained just by controlling the quantity of the Complexing Agent. The resistivity of complexed films is more than that of as-deposited films. Thermoelectric power (TEP) measurement shows that the carrier concentration and mobility decrease with increasing quantity of oxalic acid. Optical absorption study reveals that the band gap energy, irrespective of the quantity of oxalic acid added to the material, is 1.75 eV.
S. R. Gadakh - One of the best experts on this subject based on the ideXlab platform.
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Effect of concentration of Complexing Agent (tartaric acid) on the properties of spray deposited Sb2S3 thin films
Materials Chemistry and Physics, 2003Co-Authors: S. R. Gadakh, C.h. BhosaleAbstract:Abstract Antimony trisulphide thin films have been prepared by a spray pyrolysis technique using various concentrations of Complexing Agent (tartaric acid) in the spray solution. These films are characterized for structural, electrical and optical properties. The results of XRD studies reveal that the films are polycrystalline. The crystallinity and direction of growth is found to be a function of the concentration of Complexing Agent. It is found that resistivity varies with the concentration of Complexing Agent. The resistivity of the films is 106–107 Ω cm−1. The band gap energy also varies with the concentration of the Complexing Agent from 1.92 to 2.13 eV.
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Effect of concentration of Complexing Agent (tartaric acid) on spray-deposited Bi2S3 films
Materials Research Bulletin, 2000Co-Authors: S. R. Gadakh, C.h. BhosaleAbstract:Abstract Bi 2 S 3 thin films were prepared without Complexing Agent and with different concentrations of tartaric acid as a Complexing Agent by a spray pyrolysis technique. The effect of concentration of the Complexing Agent on the properties of Bi 2 S 3 thin films was studied by characterizing the films by X-ray diffraction, scanning electron microscopy, optical absorption, and dark electrical resistivity measurement techniques. These studies revealed that all films were polycrystalline. The band gap energy for films grown without Complexing Agent was observed to be 1.72 eV. However, the band gap energy for different concentrations of Complexing Agent was observed to be 2.0 eV. The electrical resistivity of the films with Complexing Agent was higher than that of the film prepared without Complexing Agent. The electrical resistivity increased with increasing concentration of Complexing Agent.
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Effect of concentration of Complexing Agent on the spray deposited Bi2S3 thin films
Materials Chemistry and Physics, 2000Co-Authors: S. R. Gadakh, C.h. BhosaleAbstract:Abstract Bi2S3 thin films have been prepared without Complexing Agent and with different concentrations of ethylene diamine tetra acetic acid (EDTA) as Complexing Agent by a spray pyrolysis technique. The effect of concentrations of Complexing Agent on the properties of Bi2S3 thin films is studied by characterizing the films by X-ray diffraction, scanning electron microscopy (SEM), optical absorption and dark electrical resistivity measurement techniques. These studies reveal that all films are polycrystalline. The band gap energy for as deposited films is observed to be 1.72 eV. However, the band gap energy is observed to be 2.0 eV for different concentrations of Complexing Agent. The electrical resistivity of the films with Complexing Agent is higher than that of the films prepared without Complexing Agent. The electrical resistivity also depends upon the concentration of the Complexing Agent.
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Effect of Complexing Agent on the properties of spray-deposited Bi2S3 thin films
Materials Chemistry and Physics, 1998Co-Authors: S. R. Gadakh, V. V. Killedar, Chandrakant D. Lokhande, C.h. BhosaleAbstract:Abstract Bi2S3 thin films are deposited by a spray pyrolysis technique using oxalic acid as a Complexing Agent. The films are characterized for their structural, optical and electrical properties. The results are compared with the properties of Bi2S3 thin films produced by the same technique without using the Complexing Agent. The XRD studies reveal that the growth of the film in a particular direction can be obtained just by controlling the quantity of the Complexing Agent. The resistivity of complexed films is more than that of as-deposited films. Thermoelectric power (TEP) measurement shows that the carrier concentration and mobility decrease with increasing quantity of oxalic acid. Optical absorption study reveals that the band gap energy, irrespective of the quantity of oxalic acid added to the material, is 1.75 eV.
B S Pawar - One of the best experts on this subject based on the ideXlab platform.
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effect of Complexing Agent on the properties of electrochemically deposited cu2znsns4 czts thin films
Applied Surface Science, 2010Co-Authors: B S Pawar, S M Pawar, Seung Wook Shin, Doo Sun Choi, Chanjin Park, Sanjay S Kolekar, Jin Hyeok KimAbstract:Abstract The Cu2ZnSnS4 (CZTS) thin films have been electrochemically deposited on Mo-coated glass substrate from weak acidic medium (pH 4.5–5) at room temperature. The effect of Complexing Agent (tri-sodium citrate) on the structural, morphological and compositional properties of CZTS thin films has been investigated. The as-deposited and annealed thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM),EDAX and X-ray photoelectron spectroscopy (XPS) techniques for their structural, morphological, compositional and chemical properties, respectively. XRD studies reveal that the amorphous nature of as-deposited thin film changes into polycrystalline with kesterite crystal structure after annealing in Ar atmosphere. The film prepared without Complexing Agent showed well-covered surface morphology on the substrate with some cracks on the surface of the film whereas those prepared using Complexing Agent, exhibited uneven and slightly porous and some overgrown particles on the surface of the films. After annealing, morphology changes into the flat grains, uniformly distributed over the entire surface of the substrate. The EDAX and XPS study reveals that the films deposited using 0.2 M tri-sodium citrate are nearly stoichiometric.
Kimio Kunimori - One of the best experts on this subject based on the ideXlab platform.
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Preparation of highly dispersed silica-supported palladium catalysts by a Complexing Agent-assisted sol-gel method and their characteristics
Applied Catalysis A-general, 2002Co-Authors: S. Tanaka, Fujio Mizukami, Shuichi Niwa, Makoto Toba, Kazuyuki Maeda, Hiromichi Shimada, Kimio KunimoriAbstract:Abstract Pd/SiO2 catalysts were prepared by a Complexing Agent-assisted sol–gel method, and impregnation methods using an organic Complexing Agent (imp-org) or water (imp-w) as the impregnation solvent. The Pd/SiO2 catalysts were characterized by TG-DTA, Fourier transform-infrared (FT-IR) spectroscopy, 13 C NMR, X-ray powder diffraction (XRD), transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS) and CO adsorption, and the difference between the preparation methods was discussed. The sol–gel catalysts usually contained some organics after the heat treatment in hydrogen. Moreover, it was found that trace amounts of organics remain even in the sol–gel catalyst activated at 873 K in hydrogen. In the sol–gel catalyst at 673 K in hydrogen, the palladium was somewhat positively charged. On the other hand, the palladium in the sol–gel catalyst activated at 873 K and both impregnation catalysts activated at 673 K in hydrogen were completely metallic. The palladium particles in the sol–gel catalysts were much smaller and more uniform in size than those in the corresponding impregnation catalysts. Furthermore, on the TEM images, the metal particles in the sol–gel catalysts in comparison with those in both impregnation ones seemed to be somewhat covered with the silica or embedded in the silica. Reflecting this, with an increase in the activation temperature, the particles did not grow in size as rapidly in the sol–gel catalysts as in both impregnation ones.
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Highly selective formation of aldehydes in the hydrogenation of the corresponding acid chlorides with silica-supported palladium catalysts prepared by a Complexing Agent-assisted sol–gel method
Applied Catalysis A-general, 2002Co-Authors: S. Tanaka, Fujio Mizukami, Shuichi Niwa, Makoto Toba, Gy. Tasi, Kimio KunimoriAbstract:Abstract Synthesis of aldehydes from acid chlorides was carried out using four types of supported Pd/SiO 2 catalysts, which were prepared by a Complexing Agent-assisted sol–gel method and two types of impregnations with organic solvents or water, and a commercial Pd/BaSO 4 catalyst. The performance of the catalysts was much affected by the catalyst preparation and activation conditions. The sol–gel catalysts activated under milder conditions exhibited the highest performance for the formation of aldehydes. The high performance of the sol–gel catalysts was due to the organic residues derived from acetylacetone and ethylene glycol used in the sol–gel catalyst preparation process. The organic residues play a role similar to that of a poison added into the reaction solution for the traditional Rosenmund reduction, while being kept in the silica gel matrices.
A U Ubale - One of the best experts on this subject based on the ideXlab platform.
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structural optical and electric properties of nanocrystalline mgse thin films deposited by chemical route using triethanolamine as a Complexing Agent
Solid State Sciences, 2013Co-Authors: A U Ubale, Y S Sakhare, S G Ibrahim, M R BelkhedkarAbstract:Abstract Semiconducting nanocrystalline thin films of magnesium selenide have been prepared using economic chemical bath deposition technique onto glass substrates at room temperature. The deposition bath consists of magnesium chloride, triethanolamine, hydrazine hydrate and selenium dioxide. The quantity of triethanolamine in the deposition bath was varied to study its effect on growth process as well as on physical properties of MgSe. The deposited films were characterized using X-ray diffraction, scanning electron microscopy and atomic force microscopy techniques. The effect of Complexing Agent (TEA) on optical and electrical properties is reported. It was found that as the triethanolamine in deposition bath increases, optical band-gap and electrical resistivity decreases. The thermo-emf measurement shows p-type nature of MgSe.
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Synthesis of Nanostructured As2S3 Thin Films by Chemical Route: Effect of Complexing Agent
2012Co-Authors: A U Ubale, Y S Sakhare, M R Belkhedkar, Monali V. Bhute, S G IbrahimAbstract:effect of Complexing Agent on electrical properties of nanostructured As2S3thin films deposited by chemical bath deposition method is reported. For the deposition, the complex of arsenic was allowed to react with sodium thiosulphate in aqueous medium at room temperature.The effect of various Complexing Agents like Ethylenediaminetetraacetic acid (EDTA), oxalic acid, tartaric acid and acetic acid on electrical properties are studied. The electrical resistivity and activation energy is found complex dependent.
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effect of Complexing Agent on growth process and properties of nanostructured bi2s3 thin films deposited by chemical bath deposition method
Materials Chemistry and Physics, 2010Co-Authors: A U UbaleAbstract:Abstract Nanostructured Bi2S3 thin films have been prepared onto amorphous glass substrates by chemical bath deposition method at room temperature using bismuth nitrate and sodium thiosulphate as cationic and anionic precursors with EDTA as Complexing Agent in aqueous medium. The X-ray diffraction study reveals that the films deposited without the Complexing Agent are amorphous in nature and becomes nanocrystalline in the presence of EDTA. The resistivity for the films prepared from EDTA complexed bath is decreased due to the improvement in grain structure. The decrease in optical bandgap and activation energy is observed as the thickness of the film varies from 45 to 211 nm on account of the variation of the volume of Complexing Agent in reaction bath. Studies reveal that the growth mechanism of Bi2S3 gets affected in the presence of Complexing Agent EDTA and shows impact on structural, electrical and optical properties.