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Sung Kyu Park - One of the best experts on this subject based on the ideXlab platform.

Yong-hoon Kim - One of the best experts on this subject based on the ideXlab platform.

  • Effects of Composition Ratio on solution-processed InGaZnO thin-film transistors
    ECS Transactions, 2013
    Co-Authors: Jeong-soo Lee, Seung Min Song, Soo Yeon Lee, Yong-hoon Kim, Jang-yeon Kwon, Min-koo Han
    Abstract:

    We fabricated solution-processed IGZO TFTs with various Composition Ratio of precursors according to the contents of In, Ga, and Zn. Threshold voltage of solution-processed IGZO TFTs was -0.43 V, 3.86 V, and 11.12 V when the Composition Ratio was varied by 7:1:2, 6:3:1, and 5:1:4, respectively. SatuRation mobility of solution-proc essed IGZO TFTs was 1.4 cm 2 /V·sec, 0.84 cm 2 /V·sec, and 0.3 cm 2 /V·sec with the Composition Ratio of 7:1:2, 6:3:1, and 5:1:4 respectively. When In Composition Ratio increased, the threshold voltage decreased and satuRation mobility increased because of the increase of electron concentRation. When Ga Composition Ratio increased, the off-current was decreased because of the suppression of formation of oxygen vacancies. When Zn Composition Ratio increased, the hysteresis was decreased because of the reduction of interstitial states between channel and insulator.

  • Effect of Zinc/Tin Composition Ratio on the OpeRational Stability of Solution-Processed Zinc–Tin–Oxide Thin-Film Transistors
    IEEE Electron Device Letters, 2012
    Co-Authors: Yong-hoon Kim, Jeong In Han, Sung Kyu Park
    Abstract:

    Variation of Zn:Sn atomic Composition Ratio in zinc-tin-oxide (ZTO) thin films induced a dramatic change in the microstructure and also strongly influenced the device performance and opeRational stability of ZTO thin-film transistors (TFTs). The large variation of threshold voltage shift under gate bias stress appears to be closely correlated to the excessive or deficient Sn content and the oxidation potentials of the metallic components as well as environmental effects. It is noted that the optimum Zn:Sn atomic Composition Ratio in ZTO films can improve the device performance and opeRational stability of the solution-processed ZTO TFTs.

  • effect of zinc tin Composition Ratio on the opeRational stability of solution processed zinc tin oxide thin film transistors
    IEEE Electron Device Letters, 2012
    Co-Authors: Yong-hoon Kim, Jeong In Han, Sung Kyu Park
    Abstract:

    Variation of Zn:Sn atomic Composition Ratio in zinc-tin-oxide (ZTO) thin films induced a dramatic change in the microstructure and also strongly influenced the device performance and opeRational stability of ZTO thin-film transistors (TFTs). The large variation of threshold voltage shift under gate bias stress appears to be closely correlated to the excessive or deficient Sn content and the oxidation potentials of the metallic components as well as environmental effects. It is noted that the optimum Zn:Sn atomic Composition Ratio in ZTO films can improve the device performance and opeRational stability of the solution-processed ZTO TFTs.

Jeong In Han - One of the best experts on this subject based on the ideXlab platform.

Hyun Jae Kim - One of the best experts on this subject based on the ideXlab platform.

  • effect of indium Composition Ratio on solution processed nanocrystalline ingazno thin film transistors
    Applied Physics Letters, 2009
    Co-Authors: Gun Hee Kim, Byung Du Ahn, Hyun Soo Shin, Woong Hee Jeong, Hee Jin Kim, Hyun Jae Kim
    Abstract:

    The effects of the indium content on characteristics of nanocrystalline InGaZnO (IGZO) films grown by a sol-gel method and their thin film transistors (TFTs) have been investigated. Excess indium incorpoRation into IGZO enhances the field effect mobilities of the TFTs due to the increase in conducting path ways and decreases the grain size and the surface roughness of the films because more InO2− ions induce cubic stacking faults with IGZO. These structural variations result in a decrease in density of interfacial trap sites at the semiconductor-gate insulator interface, leading to an improvement of the subthreshold gate swing of the TFTs.

A Perezrodriguez - One of the best experts on this subject based on the ideXlab platform.

  • secondary phases dependence on Composition Ratio in sprayed cu2znsns4 thin films and its impact on the high power conversion efficiency
    Solar Energy Materials and Solar Cells, 2013
    Co-Authors: O Vigilgalan, Moises Espindolarodriguez, Maykel Courel, Xavier Fontane, Dioulde Sylla, Victor Izquierdoroca, Andrew Fairbrother, Edgardo Saucedo, A Perezrodriguez
    Abstract:

    Abstract In this work we report the relation between different secondary phases formation and the values of Cu/(Zn+Sn) and Zn/Sn Ratios of Cu 2 ZnSnS 4 (CZTS) thin films deposited by pneumatic spray pyrolysis using air as carrier gas. The films were grown on soda lime glass substrates via (CH 3 COO) 2 ·Zn·2H 2 O, CuCl 2 ·2H 2 O, SnCl 2 ·2H 2 O and thiourea as precursors salts in the solution. The secondary phases present in the films were determined from Raman spectroscopy and the chemical Composition of the elements from X-ray fluorescence (XRF) measurements. Varying the growth parameters and post-deposition thermal and chemical KCN treatments we have studied the different secondary phases formation dependence on the values of the Cu/(Zn+Sn) and Zn/Sn Ratios and its impact on the properties of polycrystalline thin films solar cells where CZTS is used as the absorber layer.