The Experts below are selected from a list of 294 Experts worldwide ranked by ideXlab platform
Jun Zhang - One of the best experts on this subject based on the ideXlab platform.
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Effective Concentration Profile: A Novel 1-D Analysis of the Variation of Lateral Thickness (VLT) Lateral Power Devices
IEEE Journal of the Electron Devices Society, 2020Co-Authors: Jun Zhang, Chen-yang Huang, Fang-ren HuAbstract:The VLT technique features for its irregular thickness of drift region and therefore realize the even surface electric field even with a uniformly doped drift region. However, the sophisticated structure of the drift region also making 2-D methods impractical in both modeling and explaining VLT's physical nature. In this paper, based on the Effective Concentration Profile (ECP) theory, a simple but effective 1-D modeling methodology is proposed to provide physical insight into the VLT technique. The VLT-ECP concept indicates that by physically removing the region that above Charge Appointment Line (CAL), the charge contributes to the lateral depletion can be reduced to zero leading to an even surface electric field. Further, an optimization criterion is proposed to provide useful guidance for the designing of VLT lateral power devices in practice. The comparison between the analytical results obtained by the proposed model and TCAD simulations verified the veracity and effectiveness of the proposed methodology.
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Analysis and Modeling of Lateral Power Devices With Stepped Drift Region Thickness via Effective Concentration Profile Concept
IEEE Journal of the Electron Devices Society, 2020Co-Authors: Jun Zhang, Chen-yang Huang, Fang-ren HuAbstract:Stepped drift region thickness technique alters the drift region doping dose and its distribution, and therefore modulates the device's off-state characteristics. However, due to the sophisticated structure of the 2-D stepped drift region, the conventional 2-D modeling method is too complicated to provide a clear physical meaning. In this paper, based on the Effective Concentration Profile (ECP) theory, a simple but accurate 1-D ECP concept is proposed to unveil the physical insight of the stepped drift region technique and quantitatively analysis the influence of which on device breakdown characteristic. Therefore, the sophisticated 2-D structure affected by both RESURF and curvature effects is explored by a simple 1-D model with segmented-doped PN junction. Furthermore, based on the proposed analytical model, the designing criterion is proposed, which provide useful guidance for utilizing the benefit of the Stepped Drift Region Thickness technique and thus realizing the optimized surface electric field and breakdown voltage. The results obtained by the proposed model are found to be sufficiently accurate comparing with TCAD simulation results.
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RESURF Principle in AlGaN/GaN HEMTs: Accurate 1-D Modeling on Off-State Avalanche Breakdown Behavior via Effective Concentration Profile
IEEE Journal of the Electron Devices Society, 2020Co-Authors: Jun ZhangAbstract:We present a simple but accurate 1-D methodology of modeling for AlGaN/GaN High Electron Mobility Transistors (HEMTs), and by which means study its Reduced Surface Field (RESURF) effect. By using the Effective Concentration Profile Concept, the proposed methodology accounts the interactions between each layer and electric field crowding induced by gate/drain electrodes simultaneously without introducing any simulation results and correction factors. The proposed model indicates that same as that in silicon-based lateral power devices, the RESURF effect is also present in AlGaN/GaN HEMTs. Thus, the channel layer doping of AlGaN/GaN HEMTs plays a leading role in determining the devices’ off-state characteristics. Owing to the veracity and simplicity of the proposed model, in this paper, the devices’ breakdown voltage and RESURF criterion are analytically obtained via a 1-D approach for the first time. The good agreements between the analytical model, experimental results, and 2-D simulations verify the validity of the proposed methodology.
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A New Physical Understanding of Lateral Step Doping Technique via Effective Concentration Profile Concept
IEEE Transactions on Electron Devices, 2019Co-Authors: Jun Zhang, Fang-ren HuAbstract:The drift region doping Profile plays a significant role in affecting the performance of lateral power devices on silicon-on-insulator (SOI) substrate. However, due to the modeling difficulty of the 2-D solution, the physical meaning of which still remains unclear. Thus, a novel effective doping Profile concept is proposed to explore the physical insight of the surface electric field (EF) reshaping as a result of the step lateral doping Profile. Through the effective Concentration Profile (ECP) theory, the sophisticated 2-D relationship between lateral step doping Profile (SDP) and reduced surface field (RESURF) effect can be simplified to the fluctuation of the 1-D effective doping Profile. A 1-D ECP model is presented accordingly to qualitatively and quantitatively explore the influence of SDP on the surface EF and breakdown voltage (BV) improvements. Furthermore, the designing criterion of drift region SDP is proposed with the help of the analytical model, which provides a useful guidance for realizing the optimized surface EF and BV in devices with SDP.
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Modeling of the Variation of Lateral Doping (VLD) Lateral Power Devices via 1-D Analysis Using Effective Concentration Profile Concept
IEEE Journal of the Electron Devices Society, 2019Co-Authors: Jun Zhang, Chen-yang Huang, Ke-meng Yang, Fang-ren HuAbstract:The VLD technique has introduced for the propose of achieving the ideal surface electric field via a non-uniformly doped drift region. Yet, the ideal doping Profile is impossible to be fulfilled in practical thus breaking the optimized lateral breakdown characteristic. In addition, the conventional 2-D methods, due to its complexity, are impractical in both explaining its physical nature and providing designing guidance. In this paper, a simple 1-D methodology based on Effective Concentration Profile (ECP) theory is proposed to provide the physical insight of the VLD technique and quantitatively depict its breakdown characteristic. The VLD-ECP concept indicates that the perfectly even surface electric field can be obtained by adjusting the drift region doping dose equals to the Charge Appointment Line (CAL) so that all the charges in drift region contribute to the vertical depletion, thus the lateral structure being an equivalently P-I-N junction. Considering non-ideal doping Profile of commercial devices, a designing optimization criterion is proposed to avoid the undesirable lateral breakdown. The analytical results obtained by the proposed model are found to be sufficiently accurate comparing with TCAD simulation results verifying the veracity and effectiveness of the proposed methodology.
Fang-ren Hu - One of the best experts on this subject based on the ideXlab platform.
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Analysis and Modeling of Lateral Power Devices With Stepped Drift Region Thickness via Effective Concentration Profile Concept
IEEE Journal of the Electron Devices Society, 2020Co-Authors: Jun Zhang, Chen-yang Huang, Fang-ren HuAbstract:Stepped drift region thickness technique alters the drift region doping dose and its distribution, and therefore modulates the device's off-state characteristics. However, due to the sophisticated structure of the 2-D stepped drift region, the conventional 2-D modeling method is too complicated to provide a clear physical meaning. In this paper, based on the Effective Concentration Profile (ECP) theory, a simple but accurate 1-D ECP concept is proposed to unveil the physical insight of the stepped drift region technique and quantitatively analysis the influence of which on device breakdown characteristic. Therefore, the sophisticated 2-D structure affected by both RESURF and curvature effects is explored by a simple 1-D model with segmented-doped PN junction. Furthermore, based on the proposed analytical model, the designing criterion is proposed, which provide useful guidance for utilizing the benefit of the Stepped Drift Region Thickness technique and thus realizing the optimized surface electric field and breakdown voltage. The results obtained by the proposed model are found to be sufficiently accurate comparing with TCAD simulation results.
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Effective Concentration Profile: A Novel 1-D Analysis of the Variation of Lateral Thickness (VLT) Lateral Power Devices
IEEE Journal of the Electron Devices Society, 2020Co-Authors: Jun Zhang, Chen-yang Huang, Fang-ren HuAbstract:The VLT technique features for its irregular thickness of drift region and therefore realize the even surface electric field even with a uniformly doped drift region. However, the sophisticated structure of the drift region also making 2-D methods impractical in both modeling and explaining VLT's physical nature. In this paper, based on the Effective Concentration Profile (ECP) theory, a simple but effective 1-D modeling methodology is proposed to provide physical insight into the VLT technique. The VLT-ECP concept indicates that by physically removing the region that above Charge Appointment Line (CAL), the charge contributes to the lateral depletion can be reduced to zero leading to an even surface electric field. Further, an optimization criterion is proposed to provide useful guidance for the designing of VLT lateral power devices in practice. The comparison between the analytical results obtained by the proposed model and TCAD simulations verified the veracity and effectiveness of the proposed methodology.
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A New Physical Understanding of Lateral Step Doping Technique via Effective Concentration Profile Concept
IEEE Transactions on Electron Devices, 2019Co-Authors: Jun Zhang, Fang-ren HuAbstract:The drift region doping Profile plays a significant role in affecting the performance of lateral power devices on silicon-on-insulator (SOI) substrate. However, due to the modeling difficulty of the 2-D solution, the physical meaning of which still remains unclear. Thus, a novel effective doping Profile concept is proposed to explore the physical insight of the surface electric field (EF) reshaping as a result of the step lateral doping Profile. Through the effective Concentration Profile (ECP) theory, the sophisticated 2-D relationship between lateral step doping Profile (SDP) and reduced surface field (RESURF) effect can be simplified to the fluctuation of the 1-D effective doping Profile. A 1-D ECP model is presented accordingly to qualitatively and quantitatively explore the influence of SDP on the surface EF and breakdown voltage (BV) improvements. Furthermore, the designing criterion of drift region SDP is proposed with the help of the analytical model, which provides a useful guidance for realizing the optimized surface EF and BV in devices with SDP.
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Modeling of the Variation of Lateral Doping (VLD) Lateral Power Devices via 1-D Analysis Using Effective Concentration Profile Concept
IEEE Journal of the Electron Devices Society, 2019Co-Authors: Jun Zhang, Chen-yang Huang, Ke-meng Yang, Fang-ren HuAbstract:The VLD technique has introduced for the propose of achieving the ideal surface electric field via a non-uniformly doped drift region. Yet, the ideal doping Profile is impossible to be fulfilled in practical thus breaking the optimized lateral breakdown characteristic. In addition, the conventional 2-D methods, due to its complexity, are impractical in both explaining its physical nature and providing designing guidance. In this paper, a simple 1-D methodology based on Effective Concentration Profile (ECP) theory is proposed to provide the physical insight of the VLD technique and quantitatively depict its breakdown characteristic. The VLD-ECP concept indicates that the perfectly even surface electric field can be obtained by adjusting the drift region doping dose equals to the Charge Appointment Line (CAL) so that all the charges in drift region contribute to the vertical depletion, thus the lateral structure being an equivalently P-I-N junction. Considering non-ideal doping Profile of commercial devices, a designing optimization criterion is proposed to avoid the undesirable lateral breakdown. The analytical results obtained by the proposed model are found to be sufficiently accurate comparing with TCAD simulation results verifying the veracity and effectiveness of the proposed methodology.
J. Maddux - One of the best experts on this subject based on the ideXlab platform.
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Analysis of bipolar junction transistors with a Gaussian base-dopant impurity-Concentration Profile
IEEE Transactions on Electron Devices, 2001Co-Authors: Guoxin Li, A. Neugroschel, D. Hemmenway, T. Rivoli, J. MadduxAbstract:A method for a quantitative charge-control analysis of bipolar base-junction transistors with a Gaussian dopant impurity-Concentration Profile is demonstrated. Analytical expressions for the base transit time are given for two different Gaussian impurity-Concentration Profiles with the peak Concentration at the edge, and within the quasi-neutral base layer. It is also shown that approximating the Gaussian Profile by a simple exponential Profile results in only an insignificant error in the charge-control analysis.
O M F Marwah - One of the best experts on this subject based on the ideXlab platform.
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measurement and analysis of water oil multiphase flow using electrical capacitance tomography sensor
Flow Measurement and Instrumentation, 2016Co-Authors: Elmy Johana Mohamad, Ruzairi Abdul Rahim, Mohd Hafiz Fazalul Rahiman, Hanis Liyana Mohamad Ameran, Siti Zarina Mohd Muji, O M F MarwahAbstract:The paper investigates the capability of using a portable 16-segmented Electrical Capacitance Tomography (ECT) sensor and a new excitation technique to measure the Concentration Profile of water/oil multiphase flow. The Concentration Profile obtained from the capacitance measurements is capable of providing images of the water and oil flow in the pipeline. The visualization results deliver information regarding the flow regime and Concentration distribution of the multiphase flow. The information is able to help in designing process equipment and verifying the existing computational modeling and simulation techniques.
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Measurement and analysis of water/oil multiphase flow using Electrical Capacitance Tomography sensor
Flow Measurement and Instrumentation, 2016Co-Authors: Elmy Johana Mohamad, Ruzairi Abdul Rahim, Mohd Hafiz Fazalul Rahiman, Hanis Liyana Mohamad Ameran, Siti Zarina Mohd Muji, O M F MarwahAbstract:The paper investigates the capability of using a portable 16-segmented Electrical Capacitance Tomography (ECT) sensor and a new excitation technique to measure the Concentration Profile of water/oil multiphase flow. The Concentration Profile obtained from the capacitance measurements is capable of providing images of the water and oil flow in the pipeline. The visualization results deliver information regarding the flow regime and Concentration distribution of the multiphase flow. The information is able to help in designing process equipment and verifying the existing computational modeling and simulation techniques.
Deovaldo De Moraes - One of the best experts on this subject based on the ideXlab platform.
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experimental quantification of the head loss coefficient k for fittings and semi industrial pipe cross section solid Concentration Profile in pneumatic conveying of polypropylene pellets in dilute phase
Powder Technology, 2017Co-Authors: Marlene Silva De Moraes, Daniel Lopes Muinos Torneiros, Vitor Da Silva Rosa, Jordan Souza Higa, Yago R De Castro, Aldo Ramos Santos, Nelize Maria De Almeida Coelho, Deovaldo De MoraesAbstract:Abstract Pneumatic conveying in diluted phase is often employed due to its low acquisition and maintenance costs to displace pellets, sawdust and grains. Such a project requires pressure drop and solid Concentration Profile data. This work aimed at quantifying a) the coefficient K to calculate the fitting pressure drop and b) solid Concentration Profile in a vertical pipe after a fitting. The experimental unit was built in acrylic ducts with an inner diameter of 117 mm. The following singularities were studied: standard tee through side outlet without extension and with three different extensions and a 90° curve with three pieces. The solid used in this study was polypropylene in pellets, conveyed by air. Mathematical models obtained for the prediction of the K coefficient for the bend and tees exhibited an adjusted coefficient of determination of 0.83 and 0.84, respectively. Regarding pressure drop and the solid Concentration Profile, the 90° bend showed a high homogeneous distribution and lower pressure drop values. However, the use of the tee standard or with 30 mm extension is recommended, to avoid unit shut down for maintenance and possible loss of material in case of breakage, due to an intense abrasion at a single point.