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Sanjay K Banerjee - One of the best experts on this subject based on the ideXlab platform.
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semi classical monte carlo study of the impact of Contact Geometry and transmissivity on quasi ballistic nanoscale si and in0 53ga0 47as n channel finfets
Journal of Applied Physics, 2019Co-Authors: Aqyan A Bhatti, Dax M Crum, Amithraj Valsaraj, Leonard F Register, Sanjay K BanerjeeAbstract:The effects of Contact Geometry and specific Contact resistivity on In0.53Ga0.47As (InGaAs) and silicon (Si) nanoscale (18 nm channel length) n-channel FinFETs performance, and the effects of models thereof, are studied using a quantum-corrected semiclassical Monte Carlo method. Saddle/slot, raised source and drain (RSD), and reference end Contacts are modeled. Both ideal perfectly injecting and absorbing Contacts and those with more realistic specific Contact resistivities are considered. Far-from-equilibrium degenerate statistics, quantum-confinement effects on carrier distributions in real-space and among energy valleys and on scattering, and quasiballistic transport are modeled. Silicon ⟨ 110 ⟩ channel and Si ⟨ 100 ⟩ channel FinFETs, multivalley InGaAs channel FinFETs with conventionally reported InGaAs energy valley offsets, and reference idealized Γ-valley-only InGaAs (Γ-InGaAs) channel FinFETs are simulated. Among our findings, InGaAs channel FinFETs are highly sensitive to modeled Contact Geometry and specific Contact resistivity and to the band structure model, while Si channel FinFETs showed still significant but much less sensitivity to the Contact models. For example, for idealized unity transmissivity Contacts, Γ-InGaAs channel FinFETs performed best for all Contact geometries, at least in terms of transconductance, and end Contacts provided the best performance for all considered channel materials. For realistic Contact resistivities, however, the results are essentially reversed. Silicon channel FinFETs performed best for all Contact geometries, and saddle/slot and RSD Contacts outperformed end Contacts.The effects of Contact Geometry and specific Contact resistivity on In0.53Ga0.47As (InGaAs) and silicon (Si) nanoscale (18 nm channel length) n-channel FinFETs performance, and the effects of models thereof, are studied using a quantum-corrected semiclassical Monte Carlo method. Saddle/slot, raised source and drain (RSD), and reference end Contacts are modeled. Both ideal perfectly injecting and absorbing Contacts and those with more realistic specific Contact resistivities are considered. Far-from-equilibrium degenerate statistics, quantum-confinement effects on carrier distributions in real-space and among energy valleys and on scattering, and quasiballistic transport are modeled. Silicon ⟨ 110 ⟩ channel and Si ⟨ 100 ⟩ channel FinFETs, multivalley InGaAs channel FinFETs with conventionally reported InGaAs energy valley offsets, and reference idealized Γ-valley-only InGaAs (Γ-InGaAs) channel FinFETs are simulated. Among our findings, InGaAs channel FinFETs are highly sensitive to modeled Contact geom...
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semi classical monte carlo simulation of Contact Geometry orientation and ideality on nano scale si and iii v n channel finfets in the quasi ballistic limit
arXiv: Mesoscale and Nanoscale Physics, 2019Co-Authors: Aqyan A Bhatti, Dax M Crum, Amithraj Valsaraj, Leonard F Register, Sanjay K BanerjeeAbstract:The effects of Contact Geometry and ideality on InGaAs and Si nano-scale n-channel FinFET performance are studied using a quantum-corrected semi-classical Monte Carlo method. Illustrative end, saddle/slot, and raised source/drain Contacts were modeled, and with ideal transmissivity and reduced transmissivity more consistent with experimental Contact resistivities. Far-from-equilibrium degenerate statistics, quantum-confinement effects on carrier distributions in real-space and among energy valleys, quasi-ballistic transport inaccessible through drift-diffusion and hydrodynamic simulations, and scattering mechanisms and Contact geometries not readily accessible through non-equilibrium Green's function simulation are addressed. Silicon $\langle \hbox{110} \rangle$ channel devices, Si $\langle \hbox{100} \rangle$ channel devices, multi-valley (MV) InGaAs devices with conventionally-reported energy valley offsets, and idealized $\Gamma$-valley only $\left( \Gamma \right)$ InGaAs devices are modeled. Simulated silicon devices exhibited relatively limited degradation in performance due to non-ideal Contact transmissivities, more limited sensitivity to Contact Geometry with non-ideal Contact transmissivities, and some Contact-related advantage for Si $\langle \hbox{110} \rangle$ channel devices. In contrast, simulated InGaAs devices were highly sensitive to Contact Geometry and ideality and the peripheral valley's energy offset. It is illustrative of this latter sensitivity that simulated $\Gamma$-InGaAs device outperformed all others by a factor of two or more in terms of peak transconductance with perfectly transmitting reference end Contacts, while silicon devices outperformed $\Gamma$-InGaAs for all Contact geometries with non-ideal transmissivities, and MV-InGaAs devices performed the poorest under all simulation scenarios.
Aqyan A Bhatti - One of the best experts on this subject based on the ideXlab platform.
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semi classical monte carlo study of the impact of Contact Geometry and transmissivity on quasi ballistic nanoscale si and in0 53ga0 47as n channel finfets
Journal of Applied Physics, 2019Co-Authors: Aqyan A Bhatti, Dax M Crum, Amithraj Valsaraj, Leonard F Register, Sanjay K BanerjeeAbstract:The effects of Contact Geometry and specific Contact resistivity on In0.53Ga0.47As (InGaAs) and silicon (Si) nanoscale (18 nm channel length) n-channel FinFETs performance, and the effects of models thereof, are studied using a quantum-corrected semiclassical Monte Carlo method. Saddle/slot, raised source and drain (RSD), and reference end Contacts are modeled. Both ideal perfectly injecting and absorbing Contacts and those with more realistic specific Contact resistivities are considered. Far-from-equilibrium degenerate statistics, quantum-confinement effects on carrier distributions in real-space and among energy valleys and on scattering, and quasiballistic transport are modeled. Silicon ⟨ 110 ⟩ channel and Si ⟨ 100 ⟩ channel FinFETs, multivalley InGaAs channel FinFETs with conventionally reported InGaAs energy valley offsets, and reference idealized Γ-valley-only InGaAs (Γ-InGaAs) channel FinFETs are simulated. Among our findings, InGaAs channel FinFETs are highly sensitive to modeled Contact Geometry and specific Contact resistivity and to the band structure model, while Si channel FinFETs showed still significant but much less sensitivity to the Contact models. For example, for idealized unity transmissivity Contacts, Γ-InGaAs channel FinFETs performed best for all Contact geometries, at least in terms of transconductance, and end Contacts provided the best performance for all considered channel materials. For realistic Contact resistivities, however, the results are essentially reversed. Silicon channel FinFETs performed best for all Contact geometries, and saddle/slot and RSD Contacts outperformed end Contacts.The effects of Contact Geometry and specific Contact resistivity on In0.53Ga0.47As (InGaAs) and silicon (Si) nanoscale (18 nm channel length) n-channel FinFETs performance, and the effects of models thereof, are studied using a quantum-corrected semiclassical Monte Carlo method. Saddle/slot, raised source and drain (RSD), and reference end Contacts are modeled. Both ideal perfectly injecting and absorbing Contacts and those with more realistic specific Contact resistivities are considered. Far-from-equilibrium degenerate statistics, quantum-confinement effects on carrier distributions in real-space and among energy valleys and on scattering, and quasiballistic transport are modeled. Silicon ⟨ 110 ⟩ channel and Si ⟨ 100 ⟩ channel FinFETs, multivalley InGaAs channel FinFETs with conventionally reported InGaAs energy valley offsets, and reference idealized Γ-valley-only InGaAs (Γ-InGaAs) channel FinFETs are simulated. Among our findings, InGaAs channel FinFETs are highly sensitive to modeled Contact geom...
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semi classical monte carlo simulation of Contact Geometry orientation and ideality on nano scale si and iii v n channel finfets in the quasi ballistic limit
arXiv: Mesoscale and Nanoscale Physics, 2019Co-Authors: Aqyan A Bhatti, Dax M Crum, Amithraj Valsaraj, Leonard F Register, Sanjay K BanerjeeAbstract:The effects of Contact Geometry and ideality on InGaAs and Si nano-scale n-channel FinFET performance are studied using a quantum-corrected semi-classical Monte Carlo method. Illustrative end, saddle/slot, and raised source/drain Contacts were modeled, and with ideal transmissivity and reduced transmissivity more consistent with experimental Contact resistivities. Far-from-equilibrium degenerate statistics, quantum-confinement effects on carrier distributions in real-space and among energy valleys, quasi-ballistic transport inaccessible through drift-diffusion and hydrodynamic simulations, and scattering mechanisms and Contact geometries not readily accessible through non-equilibrium Green's function simulation are addressed. Silicon $\langle \hbox{110} \rangle$ channel devices, Si $\langle \hbox{100} \rangle$ channel devices, multi-valley (MV) InGaAs devices with conventionally-reported energy valley offsets, and idealized $\Gamma$-valley only $\left( \Gamma \right)$ InGaAs devices are modeled. Simulated silicon devices exhibited relatively limited degradation in performance due to non-ideal Contact transmissivities, more limited sensitivity to Contact Geometry with non-ideal Contact transmissivities, and some Contact-related advantage for Si $\langle \hbox{110} \rangle$ channel devices. In contrast, simulated InGaAs devices were highly sensitive to Contact Geometry and ideality and the peripheral valley's energy offset. It is illustrative of this latter sensitivity that simulated $\Gamma$-InGaAs device outperformed all others by a factor of two or more in terms of peak transconductance with perfectly transmitting reference end Contacts, while silicon devices outperformed $\Gamma$-InGaAs for all Contact geometries with non-ideal transmissivities, and MV-InGaAs devices performed the poorest under all simulation scenarios.
Gabriel P Paternain - One of the best experts on this subject based on the ideXlab platform.
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Contact Geometry of the restricted three body problem
Communications on Pure and Applied Mathematics, 2012Co-Authors: P Albers, Urs Frauenfelder, Otto Van Koert, Gabriel P PaternainAbstract:We show that the planar circular restricted three-body problem is of restricted Contact type for all energies below the first critical value (action of the first Lagrange point) and for energies slightly above it. This opens up the possibility of using the technology of Contact topology to understand this particular dynamical system. © 2011 Wiley Periodicals, Inc.
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the Contact Geometry of the restricted 3 body problem
arXiv: Symplectic Geometry, 2010Co-Authors: P Albers, Urs Frauenfelder, Otto Van Koert, Gabriel P PaternainAbstract:We show that the planar circular restricted three body problem is of restricted Contact type for all energies below the first critical value (action of the first Lagrange point) and for energies slightly above it. This opens up the possibility of using the technology of Contact Topology to understand this particular dynamical system.
Latha Venkataraman - One of the best experts on this subject based on the ideXlab platform.
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mechanically controlled binary conductance switching of a single molecule junction
Nature Nanotechnology, 2009Co-Authors: Su Ying Quek, Maria Kamenetska, Michael L Steigerwald, Hyoung Joon Choi, Steven G Louie, Mark S Hybertsen, Jeffrey B Neaton, Latha VenkataramanAbstract:Molecular-scale switches will be central components in nanoscale electronic devices. Switching in single-molecule junctions has so far been achieved through changes in the conformation or charge state of the molecule. Now, reversible binary switching has been demonstrated by mechanical control of the metal–molecule Contact Geometry—a mechanism which could form the basis for a new class of mechanically activated single-molecule switches.
Martin A. Green - One of the best experts on this subject based on the ideXlab platform.
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two dimensional numerical optimization study of the rear Contact Geometry of high efficiency silicon solar cells
Journal of Applied Physics, 1994Co-Authors: Armin G. Aberle, Gernot Heiser, Martin A. GreenAbstract:Under one‐sun illumination, the highest energy conversion efficiencies of silicon solar cells are presently obtained with bifacially Contacted n+p cells, where Contact to the p‐type substrate is made via small openings in the rear passivating oxide. In this work, a state‐of‐the‐art 2‐dimensional (2D) semiconductor device simulator is applied to these devices in order to investigate the effects arising from the rear metallization scheme. The impact of various cell parameters [i.e., substrate resistivity, rear surface recombination model (flatband or surface band bending conditions), positive oxide charge density, capture cross section ratio] on the cell’s current‐voltage (I‐V) characteristics and the optimum rear Contact spacing is investigated. The highly nonideal I‐V curves of rear point‐Contacted high‐efficiency silicon solar cells made at the University of New South Wales (UNSW) are modeled with a high degree of accuracy. This is achieved by properly accounting for the complex recombination behavior at...