The Experts below are selected from a list of 285 Experts worldwide ranked by ideXlab platform
Juri Jatskevich - One of the best experts on this subject based on the ideXlab platform.
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verification of parametric average value model of thyristor Controlled Rectifier systems for variable frequency wind generation systems
IEEE Transactions on Energy Conversion, 2016Co-Authors: Seyyedmilad Ebrahimi, Navid Amiri, Hamid Atighechi, Liwei Wang, Juri JatskevichAbstract:Line-commutated thyristor-Controlled Rectifiers are often used in many industrial and renewable energy applications where controllable dc voltage is required. The derivation of accurate dynamic average-value models for thyristor-Controlled systems is challenging. The recently proposed parametric average value modeling (PAVM) avoids the discrete switching states of the converters and results in computationally efficient models that are suitable for system level studies. This paper extends the PAVM recently developed for synchronous-machine-fed thyristor-Controlled-Rectifier systems to a permanent magnet synchronous machine wind generation system where the operation in variable speed and frequency is required.
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average value modeling of synchronous machine fed thyristor Controlled Rectifier systems
IEEE Transactions on Energy Conversion, 2015Co-Authors: Hamid Atighechi, Sina Chiniforoosh, Kamran Tabarraee, Juri JatskevichAbstract:Due to the repeated switching, the detailed switch-level models of electrical machines coupled with power-electronic converters are computationally expensive and hard to linearize for small-signal frequency-domain analysis. Average-value modeling (AVM) has become an effective tool for small-signal analysis of power electronic systems and time-domain transient studies where the details of switching are not important and can be neglected. Recently, a parametric AVM (PAVM) approach has been developed for machine/diode Rectifier systems. This paper extends the parametric approach to the machine/thyristor-Controlled-Rectifier systems, where the thyristor firing may be referenced to either the line voltages or the rotor position. An analytical average model for this system is also developed based on the recently proposed constant-parameter voltage-behind-reactance synchronous machine model. The new PAVM is compared against the original switching system, as well as the analytical AVM. It is shown that the PAVM can accurately predict both small-signal characteristics and large-signal transients of the original switching system in light and heavy modes, which represents an advantage over the analytical models which are typically implicit.
Juin J. Liou - One of the best experts on this subject based on the ideXlab platform.
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Bidirectional silicon-Controlled Rectifier for advanced ESD protection applications
Electronics Letters, 2019Co-Authors: Fei Hou, Zhiwei Liu, Jizhi Liu, Juin J. Liou, Liou Juin JAbstract:In this Letter, an enhanced bidirectional modified lateral silicon-Controlled Rectifier (EBMLSCR) is proposed for advanced dual-directional electrostatic discharge (ESD) protection applications. The ESD characteristics of the novel EBMLSCR and conventional bidirectional modified lateral silicon-Controlled Rectifier (BMLSCR) are measured using the transmission line pulsing tester. Compared with the BMLSCR, the EBMLSCR owns a lower trigger voltage down to 7.7 V, a higher failure current up to 6.5 A, a suitable holding voltage as well as the same superior leakage current. Based on these advantages, the proposed EBMLSCR can provide an effective ESD protection for the advanced 2.5 V/3.3 V input/output circuits, while the traditional BMLSCR becomes invalid for these applications due to its high trigger voltage and low robustness. In addition, the impact of some critical dimensions of the EBMLSCR has also been evaluated to further optimise the device performances.
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a compact and self isolated dual directional silicon Controlled Rectifier scr for esd applications
IEEE Transactions on Device and Materials Reliability, 2019Co-Authors: Zhiwei Liu, Jizhi Liu, Jun Wang, Juin J. LiouAbstract:In this paper, a compact and self-isolated dual directional silicon-Controlled Rectifier (CSDDSCR) developed in a single N-well has been proposed and demonstrated. Without using the P-well, the N-type isolation structure as well as an auxiliary trigger component, which are normally required in the traditional DDSCR, the novel CSDDSCR possesses a very high area-efficiency and robustness of ~8.81 V / $\mu$ m2. It is also shown that the CSDDSCR preserves a lower trigger voltage as 10 V, an adjustable holding voltage from 3.32 to 8.79 V under the TLP test, a smaller overshoot voltage of ~19 V at 2 A VFTLP stress, as well as an extremely low leakage current of ~94 pA measured at 3.3 V, making it a superior candidate for electrostatic discharge protection in the 3.3 V/5 V CMOS processes. Moreover, a holding voltage reversal effect has also been discovered and explained with TCAD simulation.
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very small snapback silicon Controlled Rectifier for electrostatic discharge protection in 28 nm processing
Microelectronics Reliability, 2016Co-Authors: Weihuai Wang, Juin J. Liou, Shurong Dong, Hao Jin, Wei Guo, Wei Liang, Yan HanAbstract:Abstract A novel silicon-Controlled Rectifier (SCR)-based device with very small snapback is proposed in this paper. New features including an embedded gate-to-VDD PMOS (GDPMOS) and lateral n-p-n BJT are used to achieve low trigger and high holding voltages suitable for electrostatic discharge (ESD) protection of 28-nm CMOS technology with very narrow ESD operation windows. Measured results show an ESD operation window of less than 1 V. TCAD simulation is also carried out to demonstrate the underlying physical mechanisms.
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high holding voltage silicon Controlled Rectifier for esd applications
IEEE Electron Device Letters, 2012Co-Authors: Shurong Dong, Meng Miao, Jie Zeng, Yan Han, Juin J. LiouAbstract:Low-voltage-triggering silicon-Controlled Rectifier (LVTSCR) having a gate structure can offer a low trigger voltage in electrostatic discharge (ESD) applications. To avoid the threat of latch-up, the lateral width of LVTSCR is often stretched to obtain a relatively high holding voltage. The resulting lateral dimension increase, however, enlarges the size of LVTSCR. In this letter, a new method to increase the holding voltage of LVTSCR is developed. It is based on adding a floating-n-well region in the LVTSCR and can increase the holding voltage without requiring additional layout area. Furthermore, with this new LVTSCR, it is possible to implement an ESD protection operation within a very small window of 1 V.
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Novel Silicon-Controlled Rectifier (SCR) for High-Voltage Electrostatic Discharge (ESD) Applications
IEEE Electron Device Letters, 2008Co-Authors: Juin J. Liou, Jim VinsonAbstract:Electrostatic discharge (ESD) protection for high-voltage integrated circuits is challenging due to the requirement of high holding voltage to minimize the risk of ESD-induced latchup and electrical overstress. In this letter, a new silicon-Controlled Rectifier (SCR) is developed for this particular application. The SCR is designed based on the concept that the holding voltage can be increased by reducing the emitter injection efficiency in the SCR. This is accomplished by using a segmented emitter topology. Experimental data show that the new SCR can possess a holding voltage that is larger than 40 V and a failure current It2 that is higher than 28 mA/mum.
Hamid Atighechi - One of the best experts on this subject based on the ideXlab platform.
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verification of parametric average value model of thyristor Controlled Rectifier systems for variable frequency wind generation systems
IEEE Transactions on Energy Conversion, 2016Co-Authors: Seyyedmilad Ebrahimi, Navid Amiri, Hamid Atighechi, Liwei Wang, Juri JatskevichAbstract:Line-commutated thyristor-Controlled Rectifiers are often used in many industrial and renewable energy applications where controllable dc voltage is required. The derivation of accurate dynamic average-value models for thyristor-Controlled systems is challenging. The recently proposed parametric average value modeling (PAVM) avoids the discrete switching states of the converters and results in computationally efficient models that are suitable for system level studies. This paper extends the PAVM recently developed for synchronous-machine-fed thyristor-Controlled-Rectifier systems to a permanent magnet synchronous machine wind generation system where the operation in variable speed and frequency is required.
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average value modeling of synchronous machine fed thyristor Controlled Rectifier systems
IEEE Transactions on Energy Conversion, 2015Co-Authors: Hamid Atighechi, Sina Chiniforoosh, Kamran Tabarraee, Juri JatskevichAbstract:Due to the repeated switching, the detailed switch-level models of electrical machines coupled with power-electronic converters are computationally expensive and hard to linearize for small-signal frequency-domain analysis. Average-value modeling (AVM) has become an effective tool for small-signal analysis of power electronic systems and time-domain transient studies where the details of switching are not important and can be neglected. Recently, a parametric AVM (PAVM) approach has been developed for machine/diode Rectifier systems. This paper extends the parametric approach to the machine/thyristor-Controlled-Rectifier systems, where the thyristor firing may be referenced to either the line voltages or the rotor position. An analytical average model for this system is also developed based on the recently proposed constant-parameter voltage-behind-reactance synchronous machine model. The new PAVM is compared against the original switching system, as well as the analytical AVM. It is shown that the PAVM can accurately predict both small-signal characteristics and large-signal transients of the original switching system in light and heavy modes, which represents an advantage over the analytical models which are typically implicit.
Seyyedmilad Ebrahimi - One of the best experts on this subject based on the ideXlab platform.
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verification of parametric average value model of thyristor Controlled Rectifier systems for variable frequency wind generation systems
IEEE Transactions on Energy Conversion, 2016Co-Authors: Seyyedmilad Ebrahimi, Navid Amiri, Hamid Atighechi, Liwei Wang, Juri JatskevichAbstract:Line-commutated thyristor-Controlled Rectifiers are often used in many industrial and renewable energy applications where controllable dc voltage is required. The derivation of accurate dynamic average-value models for thyristor-Controlled systems is challenging. The recently proposed parametric average value modeling (PAVM) avoids the discrete switching states of the converters and results in computationally efficient models that are suitable for system level studies. This paper extends the PAVM recently developed for synchronous-machine-fed thyristor-Controlled-Rectifier systems to a permanent magnet synchronous machine wind generation system where the operation in variable speed and frequency is required.
Liwei Wang - One of the best experts on this subject based on the ideXlab platform.
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verification of parametric average value model of thyristor Controlled Rectifier systems for variable frequency wind generation systems
IEEE Transactions on Energy Conversion, 2016Co-Authors: Seyyedmilad Ebrahimi, Navid Amiri, Hamid Atighechi, Liwei Wang, Juri JatskevichAbstract:Line-commutated thyristor-Controlled Rectifiers are often used in many industrial and renewable energy applications where controllable dc voltage is required. The derivation of accurate dynamic average-value models for thyristor-Controlled systems is challenging. The recently proposed parametric average value modeling (PAVM) avoids the discrete switching states of the converters and results in computationally efficient models that are suitable for system level studies. This paper extends the PAVM recently developed for synchronous-machine-fed thyristor-Controlled-Rectifier systems to a permanent magnet synchronous machine wind generation system where the operation in variable speed and frequency is required.
