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Valerio Pruneri - One of the best experts on this subject based on the ideXlab platform.
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Oxidation-free and ultra-smooth thin silver films grown on a Copper Seed layer
2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE IQEC, 2013Co-Authors: Nadia Formica, Dhriti Sundar Ghosh, Albert Carrilero, Tong Lai Chen, Robert E Simpson, Valerio PruneriAbstract:Silver (Ag) films have been the noble-metal choice in nanophotonics for different innovative applications. This work shows a simple and effective way to achieve atomically smooth, continuous Ag films (
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ultrastable and atomically smooth ultrathin silver films grown on a Copper Seed layer
ACS Applied Materials & Interfaces, 2013Co-Authors: Nadia Formica, Dhriti Sundar Ghosh, Albert Carrilero, Tong Lai Chen, Robert E Simpson, Valerio PruneriAbstract:An effective method to deposit atomically smooth ultrathin silver (Ag) films by employing a 1 nm Copper (Cu) Seed layer is reported. The inclusion of the Cu Seed layer leads to the deposition of films with extremely low surface roughness (<0.5 nm), while it also reduces the minimum thickness required to obtain a continuous Ag film (percolation thickness) to 3 nm compared to 6 nm without the Seed layer. Moreover, the Cu Seed layer alters the growth mechanism of the Ag film by providing energetically favorable nucleation sites for the incoming Ag atoms leading to an improved surface morphology and concomitant lower electrical sheet resistance. Optical measurements together with X-ray diffraction and electrical resistivity measurements confirmed that the Ag film undergoes a layer-by-layer growth mode resulting in a smaller grain size. The Cu Seeded Ag growth method provides a feasible way to deposit ultrathin Ag films for nanoscale electronic, plasmonic and photonic applications. In addition, as a result of ...
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Ultrastable and Atomically Smooth Ultrathin Silver Films Grown on a Copper Seed Layer
ACS Applied Materials & Interfaces, 2013Co-Authors: Nadia Formica, Dhriti Sundar Ghosh, Albert Carrilero, Tong Lai Chen, Robert E Simpson, Valerio PruneriAbstract:An effective method to deposit atomically smooth ultrathin silver (Ag) films by employing a 1 nm Copper (Cu) Seed layer is reported. The inclusion of the Cu Seed layer leads to the deposition of films with extremely low surface roughness (
Nadia Formica - One of the best experts on this subject based on the ideXlab platform.
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Oxidation-free and ultra-smooth thin silver films grown on a Copper Seed layer
2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE IQEC, 2013Co-Authors: Nadia Formica, Dhriti Sundar Ghosh, Albert Carrilero, Tong Lai Chen, Robert E Simpson, Valerio PruneriAbstract:Silver (Ag) films have been the noble-metal choice in nanophotonics for different innovative applications. This work shows a simple and effective way to achieve atomically smooth, continuous Ag films (
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ultrastable and atomically smooth ultrathin silver films grown on a Copper Seed layer
ACS Applied Materials & Interfaces, 2013Co-Authors: Nadia Formica, Dhriti Sundar Ghosh, Albert Carrilero, Tong Lai Chen, Robert E Simpson, Valerio PruneriAbstract:An effective method to deposit atomically smooth ultrathin silver (Ag) films by employing a 1 nm Copper (Cu) Seed layer is reported. The inclusion of the Cu Seed layer leads to the deposition of films with extremely low surface roughness (<0.5 nm), while it also reduces the minimum thickness required to obtain a continuous Ag film (percolation thickness) to 3 nm compared to 6 nm without the Seed layer. Moreover, the Cu Seed layer alters the growth mechanism of the Ag film by providing energetically favorable nucleation sites for the incoming Ag atoms leading to an improved surface morphology and concomitant lower electrical sheet resistance. Optical measurements together with X-ray diffraction and electrical resistivity measurements confirmed that the Ag film undergoes a layer-by-layer growth mode resulting in a smaller grain size. The Cu Seeded Ag growth method provides a feasible way to deposit ultrathin Ag films for nanoscale electronic, plasmonic and photonic applications. In addition, as a result of ...
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Ultrastable and Atomically Smooth Ultrathin Silver Films Grown on a Copper Seed Layer
ACS Applied Materials & Interfaces, 2013Co-Authors: Nadia Formica, Dhriti Sundar Ghosh, Albert Carrilero, Tong Lai Chen, Robert E Simpson, Valerio PruneriAbstract:An effective method to deposit atomically smooth ultrathin silver (Ag) films by employing a 1 nm Copper (Cu) Seed layer is reported. The inclusion of the Cu Seed layer leads to the deposition of films with extremely low surface roughness (
Tohru Hara - One of the best experts on this subject based on the ideXlab platform.
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Effect of TaSiN barrier layer composition on resistivity of electroplated Copper interconnection layers
Electrochemical and Solid State Letters, 2004Co-Authors: Tohru Hara, Ken NamikiAbstract:Optimizing the composition of a TaSiN barrier layer is presented. The stress in a Copper Seed layer decreases markedly with the increase of Si composition in the barrier. A resistivity of 2.8 μΩ-cm is obtained when a TaN barrier layer (Si composition: 0) is used. This resistivity decreases with increasing composition of Si in the TaSiN barrier layer and reaches a minimum of 2.3 μΩ-cm in an as-deposited 300 nm thick Copper layer on a TaSiN barrier containing 0.06 Si. Resistivity of 1.92 and 1.82 μΩ-cm can be obtained in 300 and 500 nm thick Copper layers, respectively, after annealing.
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electroplating of Copper conductive layer on the electroless plating Copper Seed layer
Electrochemical and Solid State Letters, 2003Co-Authors: Tohru Hara, Satoshi Kamijima, Yasuhiro ShimuraAbstract:High resistivity and peeling have been problems with electroless Copper layers preventing their use as a Seed layer. Further, when Copper is electroplated onto this Seed layer, the resistivity is as high as 4.0 μΩ cm, much higher than the 2.2 μΩ cm value when plated on a physical vapor deposition (PVD) Seed layer. This paper describes the deposition of low resistivity in Copper conductive layer on the electroless-plating Copper Seed layer. The resistivity of the as-deposited layer decreases from 4.0 to 2.7 μΩ cm as the grain size increases from 33 to 42 nm. The grain size and resistivity of the Copper layer correlate with the stress in the Copper conductive layer and in Seed layers. The grain growth can be enhanced by reducing the stress in the Copper Seed layer. A low stress and highly (111) oriented Seed layer can be deposited with nucleation control. Stress reduction can also be achieved by employing the agglomeration process for the Seed layer. A resistivity of 2.2 μΩ cm was attained in this conductive layer electroplated from Copper hexafluorosilicate electrolytic solution on the low stress Seed layer. This resistivity is comparable to the value obtained in a conventional electroplated Copper layer on the PVD Seed layer.
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properties of Copper layers deposited by electroplating on an agglomerated Copper Seed layer
Electrochemical and Solid State Letters, 2002Co-Authors: Tohru Hara, Hiroki ToidaAbstract:This paper describes the properties and adhesion strength of electroplated Copper layers deposited onto two different Seed layers. In a thin (10 nm) Seed layer, which we term Seed layer A, agglomeration occurs across the full thickness of the layer and a stress free or lower stress Seed layer is formed with an annealing at 400°C. A highly (111)-oriented Copper conductive layer is the result of this electroplating strategy. The adhesion strength is so high (40 gf) that no peeling occurs during chemical mechanical planarization (CMP) in this layer. When the layer is electroplated onto a thick (100 nm) Seed layer, which we term Seed layer B, agglomeration only occurs at the interface with Ta barrier layer with this annealing. Although a smooth Copper layer still remains at the surface, a weakly (111)-orientated Copper layer is electroplated. The adhesion strength of this type of Copper layer is as low as 10 gf so that peeling can easily occur both during annealing and CMP. Correlation is found between the critical pressure defined by the pressure occurring of the peeling in the Copper layers during the CMP with adhesion strength.
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Improved Barrier and Adhesion Properties in Sputtered TaSiN Layer for Copper Interconnects
Electrochemical and Solid State Letters, 2002Co-Authors: Tohru Hara, Yuichi Yoshida, Hiroki ToidaAbstract:The barrier effect for Copper diffusion and the adhesion properties of Copper Seed layers were studied for sputtered TaSiN layers. The diffusion depth of Copper following 400°C annealing is as deep as 25 nm using conventional tantalum nitride (TaN) barrier layers. With the doping of Si in this layer to form TaSiN, the diffusion depth decreases drastically, reaching 5.0 nm for an optimum Si composition of 0.06-0.09 The stress of thin Copper Seed layers deposited on TaSiN is much lower than that on conventional Ta barrier layers, decreasing rapidly with increasing Si composition. There appears to be no agglomeration in the low stress Copper Seed layer. The highest adhesion strength is attained in a Copper layer deposited on a TaSiN adhesion layer with a Si composition of 0.16. Note that the optimized Si composition is different between two layers, that is, the barrier and adhesion layers.
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stress in Copper Seed layer employing in the Copper interconnection
Electrochemical and Solid State Letters, 2001Co-Authors: Tohru Hara, Kohji SakataAbstract:Stress of Copper Seed employing in the Copper interconnection layer is studied. Since this stress affects largely the adhesion strength at the Cu/barrier layers and the Cu~111! orientation of Copper layer, reduction of stress is important. Higher and high stresses are applied in the layer on TaN and Ta barrier layers. These layers can lead to poor adhesion strength. Much better adhesion strength can be accomplished in the layer on the TaSiN barrier layer. The surface changes to rough surfaces with annealing at 400°C in the layer deposited on TaN. The highly stressed layer changes to a low stress layer as a result of this agglomeration. However, a smooth surface is held in the low stress layer on the TaSiN barrier layer. © 2001 The Electrochemical Society. @DOI: 10.1149/1.1399876# All rights reserved.
Robert E Simpson - One of the best experts on this subject based on the ideXlab platform.
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Oxidation-free and ultra-smooth thin silver films grown on a Copper Seed layer
2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE IQEC, 2013Co-Authors: Nadia Formica, Dhriti Sundar Ghosh, Albert Carrilero, Tong Lai Chen, Robert E Simpson, Valerio PruneriAbstract:Silver (Ag) films have been the noble-metal choice in nanophotonics for different innovative applications. This work shows a simple and effective way to achieve atomically smooth, continuous Ag films (
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ultrastable and atomically smooth ultrathin silver films grown on a Copper Seed layer
ACS Applied Materials & Interfaces, 2013Co-Authors: Nadia Formica, Dhriti Sundar Ghosh, Albert Carrilero, Tong Lai Chen, Robert E Simpson, Valerio PruneriAbstract:An effective method to deposit atomically smooth ultrathin silver (Ag) films by employing a 1 nm Copper (Cu) Seed layer is reported. The inclusion of the Cu Seed layer leads to the deposition of films with extremely low surface roughness (<0.5 nm), while it also reduces the minimum thickness required to obtain a continuous Ag film (percolation thickness) to 3 nm compared to 6 nm without the Seed layer. Moreover, the Cu Seed layer alters the growth mechanism of the Ag film by providing energetically favorable nucleation sites for the incoming Ag atoms leading to an improved surface morphology and concomitant lower electrical sheet resistance. Optical measurements together with X-ray diffraction and electrical resistivity measurements confirmed that the Ag film undergoes a layer-by-layer growth mode resulting in a smaller grain size. The Cu Seeded Ag growth method provides a feasible way to deposit ultrathin Ag films for nanoscale electronic, plasmonic and photonic applications. In addition, as a result of ...
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Ultrastable and Atomically Smooth Ultrathin Silver Films Grown on a Copper Seed Layer
ACS Applied Materials & Interfaces, 2013Co-Authors: Nadia Formica, Dhriti Sundar Ghosh, Albert Carrilero, Tong Lai Chen, Robert E Simpson, Valerio PruneriAbstract:An effective method to deposit atomically smooth ultrathin silver (Ag) films by employing a 1 nm Copper (Cu) Seed layer is reported. The inclusion of the Cu Seed layer leads to the deposition of films with extremely low surface roughness (
Tong Lai Chen - One of the best experts on this subject based on the ideXlab platform.
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Oxidation-free and ultra-smooth thin silver films grown on a Copper Seed layer
2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE IQEC, 2013Co-Authors: Nadia Formica, Dhriti Sundar Ghosh, Albert Carrilero, Tong Lai Chen, Robert E Simpson, Valerio PruneriAbstract:Silver (Ag) films have been the noble-metal choice in nanophotonics for different innovative applications. This work shows a simple and effective way to achieve atomically smooth, continuous Ag films (
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ultrastable and atomically smooth ultrathin silver films grown on a Copper Seed layer
ACS Applied Materials & Interfaces, 2013Co-Authors: Nadia Formica, Dhriti Sundar Ghosh, Albert Carrilero, Tong Lai Chen, Robert E Simpson, Valerio PruneriAbstract:An effective method to deposit atomically smooth ultrathin silver (Ag) films by employing a 1 nm Copper (Cu) Seed layer is reported. The inclusion of the Cu Seed layer leads to the deposition of films with extremely low surface roughness (<0.5 nm), while it also reduces the minimum thickness required to obtain a continuous Ag film (percolation thickness) to 3 nm compared to 6 nm without the Seed layer. Moreover, the Cu Seed layer alters the growth mechanism of the Ag film by providing energetically favorable nucleation sites for the incoming Ag atoms leading to an improved surface morphology and concomitant lower electrical sheet resistance. Optical measurements together with X-ray diffraction and electrical resistivity measurements confirmed that the Ag film undergoes a layer-by-layer growth mode resulting in a smaller grain size. The Cu Seeded Ag growth method provides a feasible way to deposit ultrathin Ag films for nanoscale electronic, plasmonic and photonic applications. In addition, as a result of ...
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Ultrastable and Atomically Smooth Ultrathin Silver Films Grown on a Copper Seed Layer
ACS Applied Materials & Interfaces, 2013Co-Authors: Nadia Formica, Dhriti Sundar Ghosh, Albert Carrilero, Tong Lai Chen, Robert E Simpson, Valerio PruneriAbstract:An effective method to deposit atomically smooth ultrathin silver (Ag) films by employing a 1 nm Copper (Cu) Seed layer is reported. The inclusion of the Cu Seed layer leads to the deposition of films with extremely low surface roughness (