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Chennupati Jagadish - One of the best experts on this subject based on the ideXlab platform.

  • electrical characterization of the threshold fluence for extended defect formation in p type silicon implanted with mev si ions
    Applied Physics Letters, 1998
    Co-Authors: S. Fatima, J Wongleung, J Fitz D Gerald, Chennupati Jagadish
    Abstract:

    Preamorphous damage in p-type Si implanted with MeV Si ions and annealed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). P-type Si was implanted with 4 MeV Si at Doses from 1×1013 to 1×1014 cm−2 and annealed at 800 °C for 15 min. For Doses below this Critical Dose, a sharp peak is observed in the DLTS spectrum, corresponding to the signature of point defects. Above the Critical Dose, a broad DLTS peak is obtained, indicating the presence of extended defects. This behavior is found to be consistent with TEM analyses where extended defects are only observed for Doses above the Critical Dose. This suggests a Critical Dose at which point defects from implantation act as nucleating sites for extended defect formation.

  • Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions
    1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140), 1998
    Co-Authors: S. Fatima, Jennifer Wong-leung, J. Fitzgerald, Chennupati Jagadish
    Abstract:

    Sub-threshold damage in n and p-type Si implanted and annealed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). Irrespective of the ion mass, DLTS spectra show a transition or Critical Dose below which point defects in p-type Si and no electrically active defects in n-type Si are transformed in to extended defect signatures above this Dose. DLTS observation correlates well with the TEM analysis; for the Doses above Critical Dose extended defects are observed. Furthermore, mass of the implanted ion has been found effecting the type of extended defects even though the Doses were adjusted to create a similar damage distribution for all the implanted ions.

  • The residual electrically active damage in ion implanted Si
    Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1995
    Co-Authors: P. Kringhøj, James Williams, S. Fatima, Chennupati Jagadish
    Abstract:

    Abstract The residual damage in Si has been studied after ion implantation and annealing at elevated temperatures. The residual electrical and structural damage has been measured with capacitance-voltage, deep level transient spectroscopy and transmission electron microscopy. A correlation between the observable structural damage and the electrically active defects was observed. A Critical Dose is determined, below which no structural and electrically active defects are found. This Dose is characterised for different implantation temperatures and implantation energies and therefore as a function of the initial damage present after implantation. Also discussed is the Critical Dose as a function of annealing parameters. The observed electrical compensation of the background concentration is found to be a result of neutral donor complexes and deep acceptors.

  • Electrically active subthreshold damage in Si ion implanted with Si, Ge, and Sn
    Applied Physics Letters, 1994
    Co-Authors: P. Kringho, James Williams, Chennupati Jagadish
    Abstract:

    The residual damage in Si after Si, Ge, and Sn implantation and annealing at elevated temperatures has been studied with capacitance‐voltage measurements and deep level transient spectroscopy. We present a Critical Dose, specific to the implanted species and energy, below which no electrically active defects are found within our detection limit (2×10−5 of the background doping). This Critical Dose is found to scale with the number of beam‐induced vacancies and is in remarkable agreement with the Critical Dose established previously for observation of structural defects (dislocation loops) with transmission electron microscopy.

  • Electrical characterization of the subthreshold damage in ion implanted p-type silicon
    1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings, 1
    Co-Authors: S. Fatima, Chennupati Jagadish
    Abstract:

    The residual electrically active defects in implanted and annealed p-type Si (boron doped) have been studied with capacitance-voltage (CV) measurements and deep level transient spectroscopy (DLTS). P-type Si is implanted with 5.5 MeV Si ions to Doses between 10/sup 12/ and 10/sup 14/ cm/sup -2/. These samples were annealed at elevated temperatures (900/spl deg/C). A Critical Dose is established indicating the transformation between point defects in to extended defects in contrast to n-type Si where a Critical Dose has been established for same species and under same annealing conditions below which no electrically active defects are seen.

S. Fatima - One of the best experts on this subject based on the ideXlab platform.

  • electrical characterization of the threshold fluence for extended defect formation in p type silicon implanted with mev si ions
    Applied Physics Letters, 1998
    Co-Authors: S. Fatima, J Wongleung, J Fitz D Gerald, Chennupati Jagadish
    Abstract:

    Preamorphous damage in p-type Si implanted with MeV Si ions and annealed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). P-type Si was implanted with 4 MeV Si at Doses from 1×1013 to 1×1014 cm−2 and annealed at 800 °C for 15 min. For Doses below this Critical Dose, a sharp peak is observed in the DLTS spectrum, corresponding to the signature of point defects. Above the Critical Dose, a broad DLTS peak is obtained, indicating the presence of extended defects. This behavior is found to be consistent with TEM analyses where extended defects are only observed for Doses above the Critical Dose. This suggests a Critical Dose at which point defects from implantation act as nucleating sites for extended defect formation.

  • Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions
    1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140), 1998
    Co-Authors: S. Fatima, Jennifer Wong-leung, J. Fitzgerald, Chennupati Jagadish
    Abstract:

    Sub-threshold damage in n and p-type Si implanted and annealed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). Irrespective of the ion mass, DLTS spectra show a transition or Critical Dose below which point defects in p-type Si and no electrically active defects in n-type Si are transformed in to extended defect signatures above this Dose. DLTS observation correlates well with the TEM analysis; for the Doses above Critical Dose extended defects are observed. Furthermore, mass of the implanted ion has been found effecting the type of extended defects even though the Doses were adjusted to create a similar damage distribution for all the implanted ions.

  • The residual electrically active damage in ion implanted Si
    Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1995
    Co-Authors: P. Kringhøj, James Williams, S. Fatima, Chennupati Jagadish
    Abstract:

    Abstract The residual damage in Si has been studied after ion implantation and annealing at elevated temperatures. The residual electrical and structural damage has been measured with capacitance-voltage, deep level transient spectroscopy and transmission electron microscopy. A correlation between the observable structural damage and the electrically active defects was observed. A Critical Dose is determined, below which no structural and electrically active defects are found. This Dose is characterised for different implantation temperatures and implantation energies and therefore as a function of the initial damage present after implantation. Also discussed is the Critical Dose as a function of annealing parameters. The observed electrical compensation of the background concentration is found to be a result of neutral donor complexes and deep acceptors.

  • Electrical characterization of the subthreshold damage in ion implanted p-type silicon
    1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings, 1
    Co-Authors: S. Fatima, Chennupati Jagadish
    Abstract:

    The residual electrically active defects in implanted and annealed p-type Si (boron doped) have been studied with capacitance-voltage (CV) measurements and deep level transient spectroscopy (DLTS). P-type Si is implanted with 5.5 MeV Si ions to Doses between 10/sup 12/ and 10/sup 14/ cm/sup -2/. These samples were annealed at elevated temperatures (900/spl deg/C). A Critical Dose is established indicating the transformation between point defects in to extended defects in contrast to n-type Si where a Critical Dose has been established for same species and under same annealing conditions below which no electrically active defects are seen.

Panos Macheras - One of the best experts on this subject based on the ideXlab platform.

Steve Arscott - One of the best experts on this subject based on the ideXlab platform.

  • Variation of absorption coefficient and determination of Critical Dose of SU-8 at 365 nm
    Applied Physics Letters, 2006
    Co-Authors: Matthieu Gaudet, J.c. Camart, Lionel Buchaillot, Steve Arscott
    Abstract:

    The absorption coefficient of thick-films of the negative photoresist SU-8 is observed to be time dependent during photolithographic exposure by I-line ultraviolet light (λ=365nm); varying linearly from 38±1cm−1 to 49±1cm−1 for a surface exposure Dose of 415mJ∕cm2. We develop a general model which enables the exposure Dose to be calculated at a given photoresist depth for a given exposure time. We determine the Critical exposure Dose for the subsequent polymerization of SU-8 having an arbitrary thickness to be 49.4±3.9mJcm−2.

Seung S Lee - One of the best experts on this subject based on the ideXlab platform.

  • application of huygens fresnel diffraction principle for high aspect ratio su 8 micro nanotip array
    Optics Letters, 2008
    Co-Authors: Seok Woo Lee, Seung S Lee
    Abstract:

    A high-aspect-ratio (~30) SU-8 micro-/nanotip array whose shape is defined by diffraction was fabricated by a single UV photolithography procedure and its exposed Dose control. The fabrication result of the tip agrees well with the Rayleigh-Sommerfeld solution of the Huygens-Fresnel principle at wide observation distances. In a near field below distance 2 μm (only several times of wavelength), necking points also agree with the solution, although it is assumed that the distance is much larger than wavelength. It can be also applied to control the shape of the tip and to determine the Critical Dose Dc of SU-8 and other photocurable polymers.