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Hong Jiang - One of the best experts on this subject based on the ideXlab platform.
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Influence of growth temperature on Crystalline Quality and Raman property of InAs0.6P0.4/InP
Optoelectronics Letters, 2014Co-Authors: Xia Liu, Lianzhen Cao, Hang Song, Hong JiangAbstract:InAs0.6P0.4 epilayers grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) on InP (100) substrate are investigated. The influence of growth temperature on Crystalline Quality of InAs0.6P0.4 epilayer is characterized by scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL) spectra, and the Raman properties are analyzed by Raman scattering spectrum. The characterization results show that the Crystalline Quality and Raman property of InAs0.6P0.4 epilayers have close relation to the growth temperature. It indicates that 530 °C is the optimum growth temperature to get good Quality and properties of InAs0.6P0.4 epilayers.
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Influence of buffer layer thickness and epilayer’s growth temperature on Crystalline Quality of InAs0.6P0.4/InP grown by LP-MOCVD
Solid State Communications, 2011Co-Authors: Xia Liu, Lianzhen Cao, Hang Song, Hong Jiang, Guoqing Miao, Xiaojuan Sun, Yiren ChenAbstract:Abstract InAs0.6P0.4 epilayers grown on InP (100) substrates using two-step growth method by LP-MOCVD were investigated. A low temperature (450 °C) In0.18Ga0.82As buffer layer was introduced to relax the lattice mismatch between the InAs0.6P0.4 epilayer and the InP substrate. The influence of In0.18Ga0.82As buffer layer thickness and epilayer’s growth temperature on Crystalline Quality of InAs0.6P0.4 epilayer was characterized by Scanning electron microscopy, X-ray diffraction, Hall measurements, Transmission electron microscopy and Photoluminescence. The experimental results showed that the Crystalline Quality of InAs0.6P0.4 epilayers could be greatly improved by optimizing the In0.82Ga0.18As buffer layer thicknesses and the InAs0.6P0.4 epilayer’s growth temperatures. It was found that, when In0.82Ga0.18As buffer layer thickness was 100 nm and InAs0.6P0.4 epilayer’s growth temperature was 580 °C, the InAs0.6P0.4 epilayer exhibited the best Crystalline Quality and properties.
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Effect of buffer layer annealing temperature on the Crystalline Quality of In0.82Ga0.18As layers grown by two-step growth method
Journal of Alloys and Compounds, 2011Co-Authors: Xia Liu, Lianzhen Cao, Hang Song, Hong Jiang, Guoqing Miao, Xiaojuan Sun, Yiren ChenAbstract:Abstract In 0.82 Ga 0.18 As epilayers were grown by LP-MOCVD on InP substrates with the insertion of In 0.82 Ga 0.18 As buffer layers, which were annealed at various temperatures between 490 °C and 630 °C for 5 min in AsH 3 ambient. The effect of buffer layer annealing temperatures on the Crystalline Quality of In 0.82 Ga 0.18 As epilayers was investigated by atomic force microscopy, scanning electron microscopy, double-crystal X-ray diffraction, and room-temperature Hall measurement. The characterization results showed that high Quality In 0.82 Ga 0.18 As epilayers were obtained by optimizing the annealing temperatures of buffer layers. In particular, the In 0.82 Ga 0.18 As epilayer with buffer layer annealed at 530 °C showed the best Crystalline Quality. The changes of Crystalline Quality of In 0.82 Ga 0.18 As epilayers at high and low annealing temperature can be attributed to the recrystallization and reevaporation of the In 0.82 Ga 0.18 As buffer layers.
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Influence of thermal annealing duration of buffer layer on the Crystalline Quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD
Applied Surface Science, 2011Co-Authors: Xia Liu, Lianzhen Cao, Hang Song, Hong Jiang, Guoqing Miao, Xiaojuan Sun, Yiren ChenAbstract:Abstract In 0.82 Ga 0.18 As epilayers were grown on InP substrates using a two-step growth technique by LP-MOCVD. A homogeneous low-temperature (450 °C) In 0.82 Ga 0.18 As buffer layer was introduced to improve the Crystalline Quality of epilayers. The influence of low-temperature buffer layer deposition condition, such as thermal annealing duration, on the Crystalline Quality of the In 0.82 Ga 0.18 As epilayer was investigated. Double-crystal X-ray diffraction measurement, Hall measurement, and Raman scattering spectrum were used to evaluate the In 0.82 Ga 0.18 As epilayers. Atomic force microscope was used to study the surface morphology. It is found that the In 0.82 Ga 0.18 As epilayer, with buffer layer thermal annealing for 5 min, exhibits the best Crystalline Quality. The change of the surface morphology of the buffer layer after thermal annealing treatment was suggested to explain the phenomenon.
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effect of buffer growth temperature on Crystalline Quality and optical property of in0 82ga0 18as inp grown by lp mocvd
Journal of Alloys and Compounds, 2008Co-Authors: Tiemin Zhang, Guoqing Miao, Hong Jiang, Yixin Jin, Hang SongAbstract:Abstract In 0.82 Ga 0.18 As epilayers were grown by LP-MOCVD on InP (1 0 0) substrates with two-step growth method. It was analyzed that growth temperature of buffer layer exerted an influence on its Crystalline Quality and optical property, which were characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence. The experiments showed that the Crystalline Quality and the optical property of the In 0.82 Ga 0.18 As epilayers had close relation to the growth temperature of buffer layer and the optimum buffer's growth temperature was about 450 °C.
Hang Song - One of the best experts on this subject based on the ideXlab platform.
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Influence of growth temperature on Crystalline Quality and Raman property of InAs0.6P0.4/InP
Optoelectronics Letters, 2014Co-Authors: Xia Liu, Lianzhen Cao, Hang Song, Hong JiangAbstract:InAs0.6P0.4 epilayers grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) on InP (100) substrate are investigated. The influence of growth temperature on Crystalline Quality of InAs0.6P0.4 epilayer is characterized by scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL) spectra, and the Raman properties are analyzed by Raman scattering spectrum. The characterization results show that the Crystalline Quality and Raman property of InAs0.6P0.4 epilayers have close relation to the growth temperature. It indicates that 530 °C is the optimum growth temperature to get good Quality and properties of InAs0.6P0.4 epilayers.
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Influence of buffer layer thickness and epilayer’s growth temperature on Crystalline Quality of InAs0.6P0.4/InP grown by LP-MOCVD
Solid State Communications, 2011Co-Authors: Xia Liu, Lianzhen Cao, Hang Song, Hong Jiang, Guoqing Miao, Xiaojuan Sun, Yiren ChenAbstract:Abstract InAs0.6P0.4 epilayers grown on InP (100) substrates using two-step growth method by LP-MOCVD were investigated. A low temperature (450 °C) In0.18Ga0.82As buffer layer was introduced to relax the lattice mismatch between the InAs0.6P0.4 epilayer and the InP substrate. The influence of In0.18Ga0.82As buffer layer thickness and epilayer’s growth temperature on Crystalline Quality of InAs0.6P0.4 epilayer was characterized by Scanning electron microscopy, X-ray diffraction, Hall measurements, Transmission electron microscopy and Photoluminescence. The experimental results showed that the Crystalline Quality of InAs0.6P0.4 epilayers could be greatly improved by optimizing the In0.82Ga0.18As buffer layer thicknesses and the InAs0.6P0.4 epilayer’s growth temperatures. It was found that, when In0.82Ga0.18As buffer layer thickness was 100 nm and InAs0.6P0.4 epilayer’s growth temperature was 580 °C, the InAs0.6P0.4 epilayer exhibited the best Crystalline Quality and properties.
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Effect of buffer layer annealing temperature on the Crystalline Quality of In0.82Ga0.18As layers grown by two-step growth method
Journal of Alloys and Compounds, 2011Co-Authors: Xia Liu, Lianzhen Cao, Hang Song, Hong Jiang, Guoqing Miao, Xiaojuan Sun, Yiren ChenAbstract:Abstract In 0.82 Ga 0.18 As epilayers were grown by LP-MOCVD on InP substrates with the insertion of In 0.82 Ga 0.18 As buffer layers, which were annealed at various temperatures between 490 °C and 630 °C for 5 min in AsH 3 ambient. The effect of buffer layer annealing temperatures on the Crystalline Quality of In 0.82 Ga 0.18 As epilayers was investigated by atomic force microscopy, scanning electron microscopy, double-crystal X-ray diffraction, and room-temperature Hall measurement. The characterization results showed that high Quality In 0.82 Ga 0.18 As epilayers were obtained by optimizing the annealing temperatures of buffer layers. In particular, the In 0.82 Ga 0.18 As epilayer with buffer layer annealed at 530 °C showed the best Crystalline Quality. The changes of Crystalline Quality of In 0.82 Ga 0.18 As epilayers at high and low annealing temperature can be attributed to the recrystallization and reevaporation of the In 0.82 Ga 0.18 As buffer layers.
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Influence of thermal annealing duration of buffer layer on the Crystalline Quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD
Applied Surface Science, 2011Co-Authors: Xia Liu, Lianzhen Cao, Hang Song, Hong Jiang, Guoqing Miao, Xiaojuan Sun, Yiren ChenAbstract:Abstract In 0.82 Ga 0.18 As epilayers were grown on InP substrates using a two-step growth technique by LP-MOCVD. A homogeneous low-temperature (450 °C) In 0.82 Ga 0.18 As buffer layer was introduced to improve the Crystalline Quality of epilayers. The influence of low-temperature buffer layer deposition condition, such as thermal annealing duration, on the Crystalline Quality of the In 0.82 Ga 0.18 As epilayer was investigated. Double-crystal X-ray diffraction measurement, Hall measurement, and Raman scattering spectrum were used to evaluate the In 0.82 Ga 0.18 As epilayers. Atomic force microscope was used to study the surface morphology. It is found that the In 0.82 Ga 0.18 As epilayer, with buffer layer thermal annealing for 5 min, exhibits the best Crystalline Quality. The change of the surface morphology of the buffer layer after thermal annealing treatment was suggested to explain the phenomenon.
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effect of buffer growth temperature on Crystalline Quality and optical property of in0 82ga0 18as inp grown by lp mocvd
Journal of Alloys and Compounds, 2008Co-Authors: Tiemin Zhang, Guoqing Miao, Hong Jiang, Yixin Jin, Hang SongAbstract:Abstract In 0.82 Ga 0.18 As epilayers were grown by LP-MOCVD on InP (1 0 0) substrates with two-step growth method. It was analyzed that growth temperature of buffer layer exerted an influence on its Crystalline Quality and optical property, which were characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence. The experiments showed that the Crystalline Quality and the optical property of the In 0.82 Ga 0.18 As epilayers had close relation to the growth temperature of buffer layer and the optimum buffer's growth temperature was about 450 °C.
Guoqing Miao - One of the best experts on this subject based on the ideXlab platform.
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Influence of buffer layer thickness and epilayer’s growth temperature on Crystalline Quality of InAs0.6P0.4/InP grown by LP-MOCVD
Solid State Communications, 2011Co-Authors: Xia Liu, Lianzhen Cao, Hang Song, Hong Jiang, Guoqing Miao, Xiaojuan Sun, Yiren ChenAbstract:Abstract InAs0.6P0.4 epilayers grown on InP (100) substrates using two-step growth method by LP-MOCVD were investigated. A low temperature (450 °C) In0.18Ga0.82As buffer layer was introduced to relax the lattice mismatch between the InAs0.6P0.4 epilayer and the InP substrate. The influence of In0.18Ga0.82As buffer layer thickness and epilayer’s growth temperature on Crystalline Quality of InAs0.6P0.4 epilayer was characterized by Scanning electron microscopy, X-ray diffraction, Hall measurements, Transmission electron microscopy and Photoluminescence. The experimental results showed that the Crystalline Quality of InAs0.6P0.4 epilayers could be greatly improved by optimizing the In0.82Ga0.18As buffer layer thicknesses and the InAs0.6P0.4 epilayer’s growth temperatures. It was found that, when In0.82Ga0.18As buffer layer thickness was 100 nm and InAs0.6P0.4 epilayer’s growth temperature was 580 °C, the InAs0.6P0.4 epilayer exhibited the best Crystalline Quality and properties.
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Effect of buffer layer annealing temperature on the Crystalline Quality of In0.82Ga0.18As layers grown by two-step growth method
Journal of Alloys and Compounds, 2011Co-Authors: Xia Liu, Lianzhen Cao, Hang Song, Hong Jiang, Guoqing Miao, Xiaojuan Sun, Yiren ChenAbstract:Abstract In 0.82 Ga 0.18 As epilayers were grown by LP-MOCVD on InP substrates with the insertion of In 0.82 Ga 0.18 As buffer layers, which were annealed at various temperatures between 490 °C and 630 °C for 5 min in AsH 3 ambient. The effect of buffer layer annealing temperatures on the Crystalline Quality of In 0.82 Ga 0.18 As epilayers was investigated by atomic force microscopy, scanning electron microscopy, double-crystal X-ray diffraction, and room-temperature Hall measurement. The characterization results showed that high Quality In 0.82 Ga 0.18 As epilayers were obtained by optimizing the annealing temperatures of buffer layers. In particular, the In 0.82 Ga 0.18 As epilayer with buffer layer annealed at 530 °C showed the best Crystalline Quality. The changes of Crystalline Quality of In 0.82 Ga 0.18 As epilayers at high and low annealing temperature can be attributed to the recrystallization and reevaporation of the In 0.82 Ga 0.18 As buffer layers.
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Influence of thermal annealing duration of buffer layer on the Crystalline Quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD
Applied Surface Science, 2011Co-Authors: Xia Liu, Lianzhen Cao, Hang Song, Hong Jiang, Guoqing Miao, Xiaojuan Sun, Yiren ChenAbstract:Abstract In 0.82 Ga 0.18 As epilayers were grown on InP substrates using a two-step growth technique by LP-MOCVD. A homogeneous low-temperature (450 °C) In 0.82 Ga 0.18 As buffer layer was introduced to improve the Crystalline Quality of epilayers. The influence of low-temperature buffer layer deposition condition, such as thermal annealing duration, on the Crystalline Quality of the In 0.82 Ga 0.18 As epilayer was investigated. Double-crystal X-ray diffraction measurement, Hall measurement, and Raman scattering spectrum were used to evaluate the In 0.82 Ga 0.18 As epilayers. Atomic force microscope was used to study the surface morphology. It is found that the In 0.82 Ga 0.18 As epilayer, with buffer layer thermal annealing for 5 min, exhibits the best Crystalline Quality. The change of the surface morphology of the buffer layer after thermal annealing treatment was suggested to explain the phenomenon.
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effect of buffer growth temperature on Crystalline Quality and optical property of in0 82ga0 18as inp grown by lp mocvd
Journal of Alloys and Compounds, 2008Co-Authors: Tiemin Zhang, Guoqing Miao, Hong Jiang, Yixin Jin, Hang SongAbstract:Abstract In 0.82 Ga 0.18 As epilayers were grown by LP-MOCVD on InP (1 0 0) substrates with two-step growth method. It was analyzed that growth temperature of buffer layer exerted an influence on its Crystalline Quality and optical property, which were characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence. The experiments showed that the Crystalline Quality and the optical property of the In 0.82 Ga 0.18 As epilayers had close relation to the growth temperature of buffer layer and the optimum buffer's growth temperature was about 450 °C.
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Effect of buffer layer thickness and epilayer growth temperature on Crystalline Quality of InAs0.9Sb0.1 grown by MOCVD
Journal of Alloys and Compounds, 2007Co-Authors: Guoqing Miao, Hang Song, Jianchun Xie, Yixin Jin, Tiemin Zhang, Hong JiangAbstract:Abstract InAs 0.9 Sb 0.1 epilayers are grown on GaAs (001) substrates by metal organic chemical vapor deposition (MOCVD). In order to relax compressive strain caused by lattice mismatch between InAs 0.9 Sb 0.1 and GaAs, we employ a two-step growth method in which low temperature (430 °C) InAs 0.9 Sb 0.1 buffer layers with different thicknesses are introduced into the structure. Effect of the buffer layer thickness and the epilayer's growth temperature on Crystalline Quality of the epilayer is investigated, respectively. It is clear that there are strip pyramids paralleling with each other on most surface of the samples. The Crystalline Quality gets well obviously when the buffer layer thickness change from 0 to 50 nm, but it gets worse when the buffer layer thickness increases to 100 nm. It is also shown that the Crystalline Quality of the epilayer is improved obviously when the epilayer is grown at 500 °C, and it gets worse when the growth temperature decreases or increases.
Yiren Chen - One of the best experts on this subject based on the ideXlab platform.
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Influence of buffer layer thickness and epilayer’s growth temperature on Crystalline Quality of InAs0.6P0.4/InP grown by LP-MOCVD
Solid State Communications, 2011Co-Authors: Xia Liu, Lianzhen Cao, Hang Song, Hong Jiang, Guoqing Miao, Xiaojuan Sun, Yiren ChenAbstract:Abstract InAs0.6P0.4 epilayers grown on InP (100) substrates using two-step growth method by LP-MOCVD were investigated. A low temperature (450 °C) In0.18Ga0.82As buffer layer was introduced to relax the lattice mismatch between the InAs0.6P0.4 epilayer and the InP substrate. The influence of In0.18Ga0.82As buffer layer thickness and epilayer’s growth temperature on Crystalline Quality of InAs0.6P0.4 epilayer was characterized by Scanning electron microscopy, X-ray diffraction, Hall measurements, Transmission electron microscopy and Photoluminescence. The experimental results showed that the Crystalline Quality of InAs0.6P0.4 epilayers could be greatly improved by optimizing the In0.82Ga0.18As buffer layer thicknesses and the InAs0.6P0.4 epilayer’s growth temperatures. It was found that, when In0.82Ga0.18As buffer layer thickness was 100 nm and InAs0.6P0.4 epilayer’s growth temperature was 580 °C, the InAs0.6P0.4 epilayer exhibited the best Crystalline Quality and properties.
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Effect of buffer layer annealing temperature on the Crystalline Quality of In0.82Ga0.18As layers grown by two-step growth method
Journal of Alloys and Compounds, 2011Co-Authors: Xia Liu, Lianzhen Cao, Hang Song, Hong Jiang, Guoqing Miao, Xiaojuan Sun, Yiren ChenAbstract:Abstract In 0.82 Ga 0.18 As epilayers were grown by LP-MOCVD on InP substrates with the insertion of In 0.82 Ga 0.18 As buffer layers, which were annealed at various temperatures between 490 °C and 630 °C for 5 min in AsH 3 ambient. The effect of buffer layer annealing temperatures on the Crystalline Quality of In 0.82 Ga 0.18 As epilayers was investigated by atomic force microscopy, scanning electron microscopy, double-crystal X-ray diffraction, and room-temperature Hall measurement. The characterization results showed that high Quality In 0.82 Ga 0.18 As epilayers were obtained by optimizing the annealing temperatures of buffer layers. In particular, the In 0.82 Ga 0.18 As epilayer with buffer layer annealed at 530 °C showed the best Crystalline Quality. The changes of Crystalline Quality of In 0.82 Ga 0.18 As epilayers at high and low annealing temperature can be attributed to the recrystallization and reevaporation of the In 0.82 Ga 0.18 As buffer layers.
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Influence of thermal annealing duration of buffer layer on the Crystalline Quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD
Applied Surface Science, 2011Co-Authors: Xia Liu, Lianzhen Cao, Hang Song, Hong Jiang, Guoqing Miao, Xiaojuan Sun, Yiren ChenAbstract:Abstract In 0.82 Ga 0.18 As epilayers were grown on InP substrates using a two-step growth technique by LP-MOCVD. A homogeneous low-temperature (450 °C) In 0.82 Ga 0.18 As buffer layer was introduced to improve the Crystalline Quality of epilayers. The influence of low-temperature buffer layer deposition condition, such as thermal annealing duration, on the Crystalline Quality of the In 0.82 Ga 0.18 As epilayer was investigated. Double-crystal X-ray diffraction measurement, Hall measurement, and Raman scattering spectrum were used to evaluate the In 0.82 Ga 0.18 As epilayers. Atomic force microscope was used to study the surface morphology. It is found that the In 0.82 Ga 0.18 As epilayer, with buffer layer thermal annealing for 5 min, exhibits the best Crystalline Quality. The change of the surface morphology of the buffer layer after thermal annealing treatment was suggested to explain the phenomenon.
Xia Liu - One of the best experts on this subject based on the ideXlab platform.
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Influence of growth temperature on Crystalline Quality and Raman property of InAs0.6P0.4/InP
Optoelectronics Letters, 2014Co-Authors: Xia Liu, Lianzhen Cao, Hang Song, Hong JiangAbstract:InAs0.6P0.4 epilayers grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) on InP (100) substrate are investigated. The influence of growth temperature on Crystalline Quality of InAs0.6P0.4 epilayer is characterized by scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL) spectra, and the Raman properties are analyzed by Raman scattering spectrum. The characterization results show that the Crystalline Quality and Raman property of InAs0.6P0.4 epilayers have close relation to the growth temperature. It indicates that 530 °C is the optimum growth temperature to get good Quality and properties of InAs0.6P0.4 epilayers.
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Influence of buffer layer thickness and epilayer’s growth temperature on Crystalline Quality of InAs0.6P0.4/InP grown by LP-MOCVD
Solid State Communications, 2011Co-Authors: Xia Liu, Lianzhen Cao, Hang Song, Hong Jiang, Guoqing Miao, Xiaojuan Sun, Yiren ChenAbstract:Abstract InAs0.6P0.4 epilayers grown on InP (100) substrates using two-step growth method by LP-MOCVD were investigated. A low temperature (450 °C) In0.18Ga0.82As buffer layer was introduced to relax the lattice mismatch between the InAs0.6P0.4 epilayer and the InP substrate. The influence of In0.18Ga0.82As buffer layer thickness and epilayer’s growth temperature on Crystalline Quality of InAs0.6P0.4 epilayer was characterized by Scanning electron microscopy, X-ray diffraction, Hall measurements, Transmission electron microscopy and Photoluminescence. The experimental results showed that the Crystalline Quality of InAs0.6P0.4 epilayers could be greatly improved by optimizing the In0.82Ga0.18As buffer layer thicknesses and the InAs0.6P0.4 epilayer’s growth temperatures. It was found that, when In0.82Ga0.18As buffer layer thickness was 100 nm and InAs0.6P0.4 epilayer’s growth temperature was 580 °C, the InAs0.6P0.4 epilayer exhibited the best Crystalline Quality and properties.
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Effect of buffer layer annealing temperature on the Crystalline Quality of In0.82Ga0.18As layers grown by two-step growth method
Journal of Alloys and Compounds, 2011Co-Authors: Xia Liu, Lianzhen Cao, Hang Song, Hong Jiang, Guoqing Miao, Xiaojuan Sun, Yiren ChenAbstract:Abstract In 0.82 Ga 0.18 As epilayers were grown by LP-MOCVD on InP substrates with the insertion of In 0.82 Ga 0.18 As buffer layers, which were annealed at various temperatures between 490 °C and 630 °C for 5 min in AsH 3 ambient. The effect of buffer layer annealing temperatures on the Crystalline Quality of In 0.82 Ga 0.18 As epilayers was investigated by atomic force microscopy, scanning electron microscopy, double-crystal X-ray diffraction, and room-temperature Hall measurement. The characterization results showed that high Quality In 0.82 Ga 0.18 As epilayers were obtained by optimizing the annealing temperatures of buffer layers. In particular, the In 0.82 Ga 0.18 As epilayer with buffer layer annealed at 530 °C showed the best Crystalline Quality. The changes of Crystalline Quality of In 0.82 Ga 0.18 As epilayers at high and low annealing temperature can be attributed to the recrystallization and reevaporation of the In 0.82 Ga 0.18 As buffer layers.
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Influence of thermal annealing duration of buffer layer on the Crystalline Quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD
Applied Surface Science, 2011Co-Authors: Xia Liu, Lianzhen Cao, Hang Song, Hong Jiang, Guoqing Miao, Xiaojuan Sun, Yiren ChenAbstract:Abstract In 0.82 Ga 0.18 As epilayers were grown on InP substrates using a two-step growth technique by LP-MOCVD. A homogeneous low-temperature (450 °C) In 0.82 Ga 0.18 As buffer layer was introduced to improve the Crystalline Quality of epilayers. The influence of low-temperature buffer layer deposition condition, such as thermal annealing duration, on the Crystalline Quality of the In 0.82 Ga 0.18 As epilayer was investigated. Double-crystal X-ray diffraction measurement, Hall measurement, and Raman scattering spectrum were used to evaluate the In 0.82 Ga 0.18 As epilayers. Atomic force microscope was used to study the surface morphology. It is found that the In 0.82 Ga 0.18 As epilayer, with buffer layer thermal annealing for 5 min, exhibits the best Crystalline Quality. The change of the surface morphology of the buffer layer after thermal annealing treatment was suggested to explain the phenomenon.