The Experts below are selected from a list of 321 Experts worldwide ranked by ideXlab platform

Roy Clarke - One of the best experts on this subject based on the ideXlab platform.

  • Controlling stress in Cubic Boron Nitride coatings
    Thin Solid Films, 2001
    Co-Authors: Roy Clarke, Charles A Taylor, Dmitri Litvinov, Darryl Barlett, Aharon Inspektor
    Abstract:

    Using the method of ion-assisted plasma deposition under conditions of reduced-bias growth, we have been able to achieve thick coatings of Cubic Boron Nitride on silicon. A key aspect of our technique is to monitor the accumulation of compressive stress in the film and to reduce its effects by appropriate choice of deposition parameters and strain-relieving buffer layers. For this purpose, we employ a battery of real-time in situ characterization tools, which are capable of accurately tracking important film growth parameters, such as nucleation density, surface roughness, crystallographic structure and texture, and residual film stress. We use a combination of electron (reflection high-energy electron diffraction, RHEED) and laser beam (multi-beam optical stress sensor, MOSS) probes to provide this information during growth. Our results demonstrate that we can successfully produce superhard Cubic Boron Nitride coatings up to 2 μm in thickness.

  • In situ texture monitoring for growth of oriented Cubic Boron Nitride films
    Applied Physics Letters, 1999
    Co-Authors: Dmitri Litvinov, Roy Clarke
    Abstract:

    We report evidence for oriented growth of pure-phase Cubic Boron Nitride on silicon (100) substrates. The films are deposited at high temperatures (up to 1200 °C) by reduced-bias ion-assisted sputtering. The growth technique produces highly textured c-BN films with relatively large grain size (∼1000 A) and reduced residual stress as the bias voltage is decreased. We have been able to grow thick (up to 2 μm) Cubic Boron Nitride films containing 100% of the Cubic phase with the (001) crystallographic axis of c-BN oriented perpendicular to the surface of the film. We show how reflection high-energy electron diffraction applied to texture monitoring in polycrystalline films can be used as an in situ process control technique that allows texture identification and quantitative characterization of its angular spread.

  • Semiconducting Cubic Boron Nitride
    Diamond and Related Materials, 1998
    Co-Authors: Dmitri Litvinov, Charles A Taylor, Roy Clarke
    Abstract:

    We present new developments in the preparation of semiconducting Cubic Boron Nitride. The thin films were grown on (100) silicon substrates using electron cyclotron resonance (ECR) ion-assisted magnetron sputtering with the kinetic energy of the incident nitrogen ions controlled by a dc substrate bias. Using this technique we have been able to grow thick (up to 2 μm) Boron Nitride films containing 100% of the Cubic phase. We have found that the relatively high nitrogen ion energy (∼ 100 cV), required to nucleate the Cubic phase, can be reduced substantially (to ∼ 60 eV) once the Cubic phase is formed, leading to reduced film stress, larger grain size (∼ 1000 Å) and improved adhesion. The films have p-type conductivity. The carrier activation energy is 60 meV and we have observed Hall mobilities of 500 cm2 V−1s−1 at na ≈ (5 × 1018 cm−3).

Dmitri Litvinov - One of the best experts on this subject based on the ideXlab platform.

  • Controlling stress in Cubic Boron Nitride coatings
    Thin Solid Films, 2001
    Co-Authors: Roy Clarke, Charles A Taylor, Dmitri Litvinov, Darryl Barlett, Aharon Inspektor
    Abstract:

    Using the method of ion-assisted plasma deposition under conditions of reduced-bias growth, we have been able to achieve thick coatings of Cubic Boron Nitride on silicon. A key aspect of our technique is to monitor the accumulation of compressive stress in the film and to reduce its effects by appropriate choice of deposition parameters and strain-relieving buffer layers. For this purpose, we employ a battery of real-time in situ characterization tools, which are capable of accurately tracking important film growth parameters, such as nucleation density, surface roughness, crystallographic structure and texture, and residual film stress. We use a combination of electron (reflection high-energy electron diffraction, RHEED) and laser beam (multi-beam optical stress sensor, MOSS) probes to provide this information during growth. Our results demonstrate that we can successfully produce superhard Cubic Boron Nitride coatings up to 2 μm in thickness.

  • In situ texture monitoring for growth of oriented Cubic Boron Nitride films
    Applied Physics Letters, 1999
    Co-Authors: Dmitri Litvinov, Roy Clarke
    Abstract:

    We report evidence for oriented growth of pure-phase Cubic Boron Nitride on silicon (100) substrates. The films are deposited at high temperatures (up to 1200 °C) by reduced-bias ion-assisted sputtering. The growth technique produces highly textured c-BN films with relatively large grain size (∼1000 A) and reduced residual stress as the bias voltage is decreased. We have been able to grow thick (up to 2 μm) Cubic Boron Nitride films containing 100% of the Cubic phase with the (001) crystallographic axis of c-BN oriented perpendicular to the surface of the film. We show how reflection high-energy electron diffraction applied to texture monitoring in polycrystalline films can be used as an in situ process control technique that allows texture identification and quantitative characterization of its angular spread.

  • Semiconducting Cubic Boron Nitride
    Diamond and Related Materials, 1998
    Co-Authors: Dmitri Litvinov, Charles A Taylor, Roy Clarke
    Abstract:

    We present new developments in the preparation of semiconducting Cubic Boron Nitride. The thin films were grown on (100) silicon substrates using electron cyclotron resonance (ECR) ion-assisted magnetron sputtering with the kinetic energy of the incident nitrogen ions controlled by a dc substrate bias. Using this technique we have been able to grow thick (up to 2 μm) Boron Nitride films containing 100% of the Cubic phase. We have found that the relatively high nitrogen ion energy (∼ 100 cV), required to nucleate the Cubic phase, can be reduced substantially (to ∼ 60 eV) once the Cubic phase is formed, leading to reduced film stress, larger grain size (∼ 1000 Å) and improved adhesion. The films have p-type conductivity. The carrier activation energy is 60 meV and we have observed Hall mobilities of 500 cm2 V−1s−1 at na ≈ (5 × 1018 cm−3).

Charles A Taylor - One of the best experts on this subject based on the ideXlab platform.

  • Controlling stress in Cubic Boron Nitride coatings
    Thin Solid Films, 2001
    Co-Authors: Roy Clarke, Charles A Taylor, Dmitri Litvinov, Darryl Barlett, Aharon Inspektor
    Abstract:

    Using the method of ion-assisted plasma deposition under conditions of reduced-bias growth, we have been able to achieve thick coatings of Cubic Boron Nitride on silicon. A key aspect of our technique is to monitor the accumulation of compressive stress in the film and to reduce its effects by appropriate choice of deposition parameters and strain-relieving buffer layers. For this purpose, we employ a battery of real-time in situ characterization tools, which are capable of accurately tracking important film growth parameters, such as nucleation density, surface roughness, crystallographic structure and texture, and residual film stress. We use a combination of electron (reflection high-energy electron diffraction, RHEED) and laser beam (multi-beam optical stress sensor, MOSS) probes to provide this information during growth. Our results demonstrate that we can successfully produce superhard Cubic Boron Nitride coatings up to 2 μm in thickness.

  • Semiconducting Cubic Boron Nitride
    Diamond and Related Materials, 1998
    Co-Authors: Dmitri Litvinov, Charles A Taylor, Roy Clarke
    Abstract:

    We present new developments in the preparation of semiconducting Cubic Boron Nitride. The thin films were grown on (100) silicon substrates using electron cyclotron resonance (ECR) ion-assisted magnetron sputtering with the kinetic energy of the incident nitrogen ions controlled by a dc substrate bias. Using this technique we have been able to grow thick (up to 2 μm) Boron Nitride films containing 100% of the Cubic phase. We have found that the relatively high nitrogen ion energy (∼ 100 cV), required to nucleate the Cubic phase, can be reduced substantially (to ∼ 60 eV) once the Cubic phase is formed, leading to reduced film stress, larger grain size (∼ 1000 Å) and improved adhesion. The films have p-type conductivity. The carrier activation energy is 60 meV and we have observed Hall mobilities of 500 cm2 V−1s−1 at na ≈ (5 × 1018 cm−3).

Vladimir L. Solozhenko - One of the best experts on this subject based on the ideXlab platform.

Bushlya Volodymyr - One of the best experts on this subject based on the ideXlab platform.