The Experts below are selected from a list of 60789 Experts worldwide ranked by ideXlab platform
Jin-wei Shi - One of the best experts on this subject based on the ideXlab platform.
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linear cascade near ballistic unitraveling carrier photodiodes with an extremely high saturation Current Bandwidth product
Journal of Lightwave Technology, 2011Co-Authors: F.-m. Kuo, M.-z. Chou, Jin-wei ShiAbstract:Saturation Current-Bandwidth product (SCBP), the key of figure of merit in high-speed and high-power photodiodes (PDs), is mainly limited by the tradeoff between carrier drift time in depletion layer and RC-limited Bandwidth of conventional PDs. Here, we present a revolutionary photodiode structure: linear-cascade photodiodes (LCPDs), designed to further improve the SCBP performance. Our demonstrated LCPD structure can greatly increase the SCBP without using a complex distributed structure of the traveling-wave PD or reducing the load resistance (output RF power). Two flip-chip bonding packaged near-ballistic unitraveling-carrier photodiode (NBUTC-PD) units are employed in our LCPD structure. It exhibits a great improvement in SCBP compared to that of the control device with a single NBUTC-PD. A two-port equivalent-circuit model is established for the LCPDs and the modeling results clearly indicate that the increase in SCBP can be attributed to the significant reduction in its total capacitance due to the serial connection. Furthermore, we find that only when each PD unit in the LCPD structure has the same amount of injected optical power and modulated frequency of optical signal, the whole structure exhibits a carrier transit time as short as that of a single PD. Under the proper optical excitation, we can achieve a record high SCBP (7500 mA·GHz and 100 GHz) for two-element LCPDs under a 50 Ω load.
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Linear-Cascade Near-Ballistic Unitraveling-Carrier Photodiodes With an Extremely High Saturation Current–Bandwidth Product
Journal of Lightwave Technology, 2011Co-Authors: F.-m. Kuo, M.-z. Chou, Jin-wei ShiAbstract:Saturation Current-Bandwidth product (SCBP), the key of figure of merit in high-speed and high-power photodiodes (PDs), is mainly limited by the tradeoff between carrier drift time in depletion layer and RC-limited Bandwidth of conventional PDs. Here, we present a revolutionary photodiode structure: linear-cascade photodiodes (LCPDs), designed to further improve the SCBP performance. Our demonstrated LCPD structure can greatly increase the SCBP without using a complex distributed structure of the traveling-wave PD or reducing the load resistance (output RF power). Two flip-chip bonding packaged near-ballistic unitraveling-carrier photodiode (NBUTC-PD) units are employed in our LCPD structure. It exhibits a great improvement in SCBP compared to that of the control device with a single NBUTC-PD. A two-port equivalent-circuit model is established for the LCPDs and the modeling results clearly indicate that the increase in SCBP can be attributed to the significant reduction in its total capacitance due to the serial connection. Furthermore, we find that only when each PD unit in the LCPD structure has the same amount of injected optical power and modulated frequency of optical signal, the whole structure exhibits a carrier transit time as short as that of a single PD. Under the proper optical excitation, we can achieve a record high SCBP (7500 mA·GHz and 100 GHz) for two-element LCPDs under a 50 Ω load.
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A linear cascade near-ballistic uni-traveling-carrier photodiodes with extremely high saturation-Current Bandwidth product (6825mA-GHz, 75mA/91GHz) under a 50Ω load
National Fiber Optic Engineers Conference, 2010Co-Authors: Jin-wei Shi, F.-m. Kuo, M.-z. ChouAbstract:We demonstrate linear cascade near-ballistic uni-traveling-carrier photodiodes. Compared with control (a single device), this novel structure exhibits significant improvement in Bandwidth-efficiency and saturation-Current-Bandwidth products. Record-high saturation-Current-Bandwidth product (>6825mA-GHz, 91GHz) under 50Ω loads can be achieved.
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extremely high saturation Current Bandwidth product performance of a near ballistic uni traveling carrier photodiode with a flip chip bonding structure
IEEE Journal of Quantum Electronics, 2010Co-Authors: Jin-wei Shi, F.-m. Kuo, Chunjong Chang, Chengyi Liu, Chengyu Chen, Jeninn ChyiAbstract:In this study, we demonstrate near-ballistic uni-traveling carrier photodiodes (NBUTC-PDs) with an optimized flip-chip bonding structure, wide 3-dB optical-to-electrical (O-E) Bandwidth (> 110 GHz), and extremely high saturation Current-Bandwidth product performance (37 mA, > 110 GHz, > 4070 mAmiddot GHz). NBUTC-PDs with different active areas (28-144 mum2) are fabricated and flip-chip bonded with coplanar waveguides onto an AlN-based pedestal. The overshoot drift velocity of the electrons in the collector layer of the NBUTC-PD means that both the thicknesses of the collector layer and active areas of our device can be increased to reduce the density of the output photoCurrent, compared to that of the traditional UTC-PD. This improves the high power performance without seriously sacrificing the speed performance. According to the measured O-E frequency responses, devices with even a large active area (144 mum2 ) can still have a flat O-E frequency response, from near dc to 110 GHz. A three-port equivalent circuit model for accurately extracting the 3-dB Bandwidth of the devices is established. The extracted 3-dB O-E Bandwidth of a device with a small active area (28 mum2) can be as high as 280 GHz under a load of 25 Omega . In addition, the saturation Current measurement results indicate that after inserting a center bonding pad on the pedestal (located below the p-metal of the NBUTC-PD for good heat sinking), the saturation Current performance of the device becomes much higher than that of the control device (without the center bonding pad), especially for the device with a small active area (28 mum2 ). The measurement and modeling results indicate that a device with a 144 mum2 active area and optimized flip-chip bonding pedestal can achieve an extremely high saturation Current-Bandwidth product (6660 mA-GHz, 37 mA, 180 GHz).
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High-speed and high-power performance of a dual-step evanescently-coupled uni-traveling-carrier photodiode at a 1.55 μm wavelength
OFC NFOEC 2007 - 2007 Conference on Optical Fiber Communication and the National Fiber Optic Engineers Conference, 2007Co-Authors: Pei-chin Chiu, Jin-wei ShiAbstract:We demonstrate a dual-step evanescently-coupled uni-traveling-carrier photodiode to minimize the dependence of responsivity on cleaved-length. High responsivity (0.9A/W), wide electrical Bandwidth (˜60GHz), and high saturation Current-Bandwidth product (≫780mA-GHz) have been achieved simultaneously under 50Ω load.
Joe C. Campbell - One of the best experts on this subject based on the ideXlab platform.
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InP-based waveguide photodiodes heterogeneously integrated on silicon-on-insulator for photonic microwave generation.
Optics express, 2013Co-Authors: Andreas Beling, A. Cross, Molly Piels, Jon D. Peters, Q. Zhou, John E. Bowers, Joe C. CampbellAbstract:High-linearity modified uni-traveling carrier photodiodes on silicon-on-insulator with low AM-to-PM conversion factor are demonstrated. The devices deliver more than 2.5 dBm RF output power up to 40 GHz and have an output third order intercept point of 30 dBm at 20 GHz. Photodiode arrays exceed a saturation Current-Bandwidth-product of 630 mA·GHz and reach unsaturated RF output power levels of 10 dBm at 20 GHz.
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High-power high-speed waveguide photodiodes and photodiode arrays heterogeneously integrated on siliconon-insulator
Optical Fiber Communication Conference National Fiber Optic Engineers Conference 2013, 2013Co-Authors: Andreas Beling, A. Cross, Molly Piels, Jon D. Peters, Q. Zhou, John E. Bowers, Joe C. CampbellAbstract:We demonstrate InP-based modified uni-traveling carrier photodiodes on silicon-on-insulator (SOI) waveguides with an internal responsivity of 0.85 A/W, up to 30 GHz Bandwidth, and high RF output power. Photodiode arrays exceed a saturation Current-Bandwidth-product of 630 mA·GHz and +10 dBm RF output power at 20 GHz.
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High-power InP-based waveguide photodiodes and photodiode arrays heterogeneously integrated on SOI
2012 International Conference on Indium Phosphide and Related Materials, 2012Co-Authors: Andreas Beling, A. Cross, Molly Piels, Jon D. Peters, Q. Zhou, John E. Bowers, Joe C. CampbellAbstract:For the first time we demonstrate evanescently-coupled modified uni-traveling carrier photodiodes (MUTC PDs) on silicon-on-insulator (SOI) waveguide with an internal responsivity of 0.85 A/W, up to 15 GHz Bandwidth, and high RF output power. A novel 2-element MUTC PD array has a saturation Current-Bandwidth-product of >630 mA*GHz and achieves +9 dBm RF output power at 20 GHz.
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High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer
IEEE Journal of Quantum Electronics, 2010Co-Authors: Huapu Pan, Andreas Beling, Hao Chen, Joe C. CampbellAbstract:We demonstrate two modified uni-traveling carrier photodiode (MUTC) structures that incorporate a charge or “cliff” layer to attain high-saturation-Current. MUTC1 achieved responsivity of 0.82 A/W and 134 mA saturation Current at -6-V and 20 GHz. The MUTC2 structure, which has higher doping density in the cliff layer and thinner absorption region, exhibited a higher saturation Current of 144 mA (at -5-V) and an improved 3 dB Bandwidth of 24 GHz; however, the responsivity was reduced to 0.69 A/W. For MUTC2, a high-saturation-Current Bandwidth product of 3456 GHz mA has been achieved. An intermodulation distortion figure of merit, IP3, > dBm at 20 GHz was observed for both MUTC structures.
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InGaAs–InP Photodiodes With High Responsivity and High Saturation Power
IEEE Photonics Technology Letters, 2007Co-Authors: Xin Wang, Ning Duan, Hao Chen, Joe C. CampbellAbstract:InGaAs-InP modified charge compensated uni- traveling carrier photodiodes with both absorbing and nonabsorbing depleted region are demonstrated. The fiber-coupled external quantum efficiency was 60% (responsivity at 1550 nm = 0.75 A/W). A 40-mum-diameter photodiode achieved 14-GHz Bandwidth and 25-dBm RF output power and a 20-mum-diameter photodiode exhibited 30-GHz Bandwidth and 15.5-dBm RF output power. The saturation Current-Bandwidth products are 1820 mA ldr GHz and 1560 mA GHz for the 40-mum-diameter and 40-mum-diameter devices, respectively.
F.-m. Kuo - One of the best experts on this subject based on the ideXlab platform.
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linear cascade near ballistic unitraveling carrier photodiodes with an extremely high saturation Current Bandwidth product
Journal of Lightwave Technology, 2011Co-Authors: F.-m. Kuo, M.-z. Chou, Jin-wei ShiAbstract:Saturation Current-Bandwidth product (SCBP), the key of figure of merit in high-speed and high-power photodiodes (PDs), is mainly limited by the tradeoff between carrier drift time in depletion layer and RC-limited Bandwidth of conventional PDs. Here, we present a revolutionary photodiode structure: linear-cascade photodiodes (LCPDs), designed to further improve the SCBP performance. Our demonstrated LCPD structure can greatly increase the SCBP without using a complex distributed structure of the traveling-wave PD or reducing the load resistance (output RF power). Two flip-chip bonding packaged near-ballistic unitraveling-carrier photodiode (NBUTC-PD) units are employed in our LCPD structure. It exhibits a great improvement in SCBP compared to that of the control device with a single NBUTC-PD. A two-port equivalent-circuit model is established for the LCPDs and the modeling results clearly indicate that the increase in SCBP can be attributed to the significant reduction in its total capacitance due to the serial connection. Furthermore, we find that only when each PD unit in the LCPD structure has the same amount of injected optical power and modulated frequency of optical signal, the whole structure exhibits a carrier transit time as short as that of a single PD. Under the proper optical excitation, we can achieve a record high SCBP (7500 mA·GHz and 100 GHz) for two-element LCPDs under a 50 Ω load.
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Linear-Cascade Near-Ballistic Unitraveling-Carrier Photodiodes With an Extremely High Saturation Current–Bandwidth Product
Journal of Lightwave Technology, 2011Co-Authors: F.-m. Kuo, M.-z. Chou, Jin-wei ShiAbstract:Saturation Current-Bandwidth product (SCBP), the key of figure of merit in high-speed and high-power photodiodes (PDs), is mainly limited by the tradeoff between carrier drift time in depletion layer and RC-limited Bandwidth of conventional PDs. Here, we present a revolutionary photodiode structure: linear-cascade photodiodes (LCPDs), designed to further improve the SCBP performance. Our demonstrated LCPD structure can greatly increase the SCBP without using a complex distributed structure of the traveling-wave PD or reducing the load resistance (output RF power). Two flip-chip bonding packaged near-ballistic unitraveling-carrier photodiode (NBUTC-PD) units are employed in our LCPD structure. It exhibits a great improvement in SCBP compared to that of the control device with a single NBUTC-PD. A two-port equivalent-circuit model is established for the LCPDs and the modeling results clearly indicate that the increase in SCBP can be attributed to the significant reduction in its total capacitance due to the serial connection. Furthermore, we find that only when each PD unit in the LCPD structure has the same amount of injected optical power and modulated frequency of optical signal, the whole structure exhibits a carrier transit time as short as that of a single PD. Under the proper optical excitation, we can achieve a record high SCBP (7500 mA·GHz and 100 GHz) for two-element LCPDs under a 50 Ω load.
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A linear cascade near-ballistic uni-traveling-carrier photodiodes with extremely high saturation-Current Bandwidth product (6825mA-GHz, 75mA/91GHz) under a 50Ω load
National Fiber Optic Engineers Conference, 2010Co-Authors: Jin-wei Shi, F.-m. Kuo, M.-z. ChouAbstract:We demonstrate linear cascade near-ballistic uni-traveling-carrier photodiodes. Compared with control (a single device), this novel structure exhibits significant improvement in Bandwidth-efficiency and saturation-Current-Bandwidth products. Record-high saturation-Current-Bandwidth product (>6825mA-GHz, 91GHz) under 50Ω loads can be achieved.
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extremely high saturation Current Bandwidth product performance of a near ballistic uni traveling carrier photodiode with a flip chip bonding structure
IEEE Journal of Quantum Electronics, 2010Co-Authors: Jin-wei Shi, F.-m. Kuo, Chunjong Chang, Chengyi Liu, Chengyu Chen, Jeninn ChyiAbstract:In this study, we demonstrate near-ballistic uni-traveling carrier photodiodes (NBUTC-PDs) with an optimized flip-chip bonding structure, wide 3-dB optical-to-electrical (O-E) Bandwidth (> 110 GHz), and extremely high saturation Current-Bandwidth product performance (37 mA, > 110 GHz, > 4070 mAmiddot GHz). NBUTC-PDs with different active areas (28-144 mum2) are fabricated and flip-chip bonded with coplanar waveguides onto an AlN-based pedestal. The overshoot drift velocity of the electrons in the collector layer of the NBUTC-PD means that both the thicknesses of the collector layer and active areas of our device can be increased to reduce the density of the output photoCurrent, compared to that of the traditional UTC-PD. This improves the high power performance without seriously sacrificing the speed performance. According to the measured O-E frequency responses, devices with even a large active area (144 mum2 ) can still have a flat O-E frequency response, from near dc to 110 GHz. A three-port equivalent circuit model for accurately extracting the 3-dB Bandwidth of the devices is established. The extracted 3-dB O-E Bandwidth of a device with a small active area (28 mum2) can be as high as 280 GHz under a load of 25 Omega . In addition, the saturation Current measurement results indicate that after inserting a center bonding pad on the pedestal (located below the p-metal of the NBUTC-PD for good heat sinking), the saturation Current performance of the device becomes much higher than that of the control device (without the center bonding pad), especially for the device with a small active area (28 mum2 ). The measurement and modeling results indicate that a device with a 144 mum2 active area and optimized flip-chip bonding pedestal can achieve an extremely high saturation Current-Bandwidth product (6660 mA-GHz, 37 mA, 180 GHz).
Jerry Lopez - One of the best experts on this subject based on the ideXlab platform.
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design of highly efficient wideband rf polar transmitters using the envelope tracking technique
IEEE Journal of Solid-state Circuits, 2009Co-Authors: Jerry Lopez, Yan Li, J D Popp, Chiachang Chuang, Koshung Chen, S Wu, Tzuyin YangAbstract:This paper discusses the design issues of highly efficient and monolithic wideband RF polar transmitters, especially the ones that use the envelope-tracking (ET) technique. Besides first reviewing the Current state-of-the-art polar transmitters in the literature, three focus topics will be discussed: 1) the system-on-a-chip (SoC) design considerations of the monolithic polar transmitter using ET versus EER (envelope elimination and restoration); 2) the design of highly efficient envelope amplifier capable of achieving the high efficiency, Current, Bandwidth, accuracy and noise specifications required for wideband signals; and 3) the design of high-efficiency monolithic Si-based class E power amplifiers (PAs) suitable for ET-based RF polar transmitters. A design prototype of a polar transmitter using ET and a monolithic SiGe PA that passed the stringent low-band EDGE (Enhanced Data rates for GSM Evolution) transmit mask with 45% overall transmitter system efficiency will be given; the simulated data of the entire polar transmitter system is also compared against the measurement. Further investigations on how to solve the technical challenges to successfully implement linear and high-efficiency ET-based polar transmitter for broadband wireless applications such as WiBro/WiMAX are also discussed.
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Low-power RF wideband polar transmitter design using the Envelope-Tracking technique
2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008Co-Authors: Donald Y. C. Lie, Jerry LopezAbstract:This paper discusses some design issues of highly efficient and monolithic wideband RF polar transmitters, especially the ones that use the Envelope-Tracking (ET) technique. We will: (1) review the state-of-the-art polar transmitters in the literature; (2) discuss the system-on-a-chip (SoC) design considerations of the monolithic polar transmitter using ET; and (3) discuss the design of envelope amplifiers capable of achieving the high efficiency, Current, Bandwidth, accuracy and noise specifications required for wideband signals.
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Design of highly-efficient wideband RF polar transmitters using the Envelope-Tracking technique
2008 IEEE Bipolar BiCMOS Circuits and Technology Meeting, 2008Co-Authors: Donald Y. C. Lie, Jerry LopezAbstract:This paper discusses the design issues of highly efficient and monolithic wideband RF polar transmitters, especially the ones that use the Envelope-Tracking (ET) technique. Besides reviewing the state-of-the-art polar transmitters in the literature, three focus topics will be discussed: (1) the system-on-a-chip (SoC) design considerations of the monolithic polar transmitter using ET; and (2) the design of highly-efficient envelope amplifier capable of achieving the high efficiency, Current, Bandwidth, accuracy and noise specifications required for wideband signals; and (3) the design of high-efficiency monolithic Si-based power amplifiers (PAs) suitable for ET-based RF polar transmitters.
Tzuyin Yang - One of the best experts on this subject based on the ideXlab platform.
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design of highly efficient wideband rf polar transmitters using the envelope tracking technique
IEEE Journal of Solid-state Circuits, 2009Co-Authors: Jerry Lopez, Yan Li, J D Popp, Chiachang Chuang, Koshung Chen, S Wu, Tzuyin YangAbstract:This paper discusses the design issues of highly efficient and monolithic wideband RF polar transmitters, especially the ones that use the envelope-tracking (ET) technique. Besides first reviewing the Current state-of-the-art polar transmitters in the literature, three focus topics will be discussed: 1) the system-on-a-chip (SoC) design considerations of the monolithic polar transmitter using ET versus EER (envelope elimination and restoration); 2) the design of highly efficient envelope amplifier capable of achieving the high efficiency, Current, Bandwidth, accuracy and noise specifications required for wideband signals; and 3) the design of high-efficiency monolithic Si-based class E power amplifiers (PAs) suitable for ET-based RF polar transmitters. A design prototype of a polar transmitter using ET and a monolithic SiGe PA that passed the stringent low-band EDGE (Enhanced Data rates for GSM Evolution) transmit mask with 45% overall transmitter system efficiency will be given; the simulated data of the entire polar transmitter system is also compared against the measurement. Further investigations on how to solve the technical challenges to successfully implement linear and high-efficiency ET-based polar transmitter for broadband wireless applications such as WiBro/WiMAX are also discussed.
