Photodiodes

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J C Campbell - One of the best experts on this subject based on the ideXlab platform.

  • characterizing and modeling nonlinear intermodulation distortions in modified uni traveling carrier Photodiodes
    IEEE Journal of Quantum Electronics, 2011
    Co-Authors: Yang Fu, Andreas Beling, Zhi Li, J C Campbell
    Abstract:

    We present a physics-based model for nonlinear analysis of InGaAs/InP modified uni-traveling carrier (MUTC) Photodiodes. At low frequencies (<;3 GHz), the Franz-Keldysh effect has been identified as the primary nonlinear mechanism in these MUTC Photodiodes. The output third-order intercept point (OIP3) is used as a figure of merit for characterizing the nonlinear intermodulation distortion. The OIP3 behavior of the photodiode simulated using this model agrees well with measurements.

  • ingaas inp Photodiodes with high responsivity and high saturation power
    IEEE Photonics Technology Letters, 2007
    Co-Authors: Xin Wang, Ning Duan, Hao Chen, J C Campbell
    Abstract:

    InGaAs-InP modified charge compensated uni- traveling carrier Photodiodes with both absorbing and nonabsorbing depleted region are demonstrated. The fiber-coupled external quantum efficiency was 60% (responsivity at 1550 nm = 0.75 A/W). A 40-mum-diameter photodiode achieved 14-GHz bandwidth and 25-dBm RF output power and a 20-mum-diameter photodiode exhibited 30-GHz bandwidth and 15.5-dBm RF output power. The saturation current-bandwidth products are 1820 mA ldr GHz and 1560 mA GHz for the 40-mum-diameter and 40-mum-diameter devices, respectively.

  • high saturation current wide bandwidth photodetectors
    IEEE Journal of Selected Topics in Quantum Electronics, 2004
    Co-Authors: D A Tulchinsky, J C Campbell, S Demiguel, K J Williams
    Abstract:

    This paper describes the design and performance of two wide-bandwidth photodiode structures. The partially depleted absorber photodiode utilizes an absorbing layer consisting of both depleted and undepleted In/sub 0.53/Ga/sub 0.47/As layers. These Photodiodes have achieved saturation currents (bandwidths) of >430 mA (300 MHz) and 199 mA (1 GHz) for 100-/spl mu/m-diameter devices and 24 mA (48 GHz) for 100-/spl mu/m/sup 2/ area devices. Charge compensation has also been utilized in a similar, but modified In/sub 0.53/Ga/sub 0.47/As-InP unitraveling-carrier photodiode design to predistort the electric field in the depletion region in order to mitigate space charge effects. For 20-/spl mu/m-diameter Photodiodes the large-signal 1-dB compression current and bandwidth were /spl sim/90 mA and 25 GHz, respectively.

Joe C. Campbell - One of the best experts on this subject based on the ideXlab platform.

  • High-Power Photodiodes for Analog Applications
    IEICE Transactions on Electronics, 2015
    Co-Authors: Andreas Beling, Joe C. Campbell, Ye Wang, Madison Woodson, Xiaojun Xie, Zhanyu Yang
    Abstract:

    High-power, high-speed Photodiodes are being used in an increasing number of applications including fiber optic antenna links, radio frequency (RF) over fiber, and photonic generation of low phase noise microwave signals. The fact that the photodiode (PD) can be operated at high photocurrent levels provides several improvements in these systems including high dynamic range, high link gain, and low noise figure. In photonic wireless systems an antenna integrated photodiode can help to increase radiated RF power without the need for electronic amplification and hence simplify the RF circuitry at the antenna unit. To achieve high RF output power, various photodiode structures have been developed [1]–[4] among which the uni-traveling carrier (UTC) photodiode [3] has demonstrated high saturation current and high bandwidth. We have developed charge-compensated modified uni-traveling carrier (MUTC) Photodiodes flip-chip bonded on high-thermal conductivity substrates to address the two primary effects that limit the RF output power of Photodiodes, space-charge and thermal.

  • Heterogeneously Integrated Photodiodes on Silicon
    IEEE Journal of Quantum Electronics, 2015
    Co-Authors: Andreas Beling, Joe C. Campbell
    Abstract:

    This paper reviews progress in the field of heterogeneously integrated Photodiodes with a focus on InP-based high-speed high-power modified uni-traveling carrier Photodiodes on silicon-on-insulator waveguides. Discrete, balanced, and photodiode arrays are described.

  • InGaAs–InP Photodiodes With High Responsivity and High Saturation Power
    IEEE Photonics Technology Letters, 2007
    Co-Authors: Xin Wang, Ning Duan, Hao Chen, Joe C. Campbell
    Abstract:

    InGaAs-InP modified charge compensated uni- traveling carrier Photodiodes with both absorbing and nonabsorbing depleted region are demonstrated. The fiber-coupled external quantum efficiency was 60% (responsivity at 1550 nm = 0.75 A/W). A 40-mum-diameter photodiode achieved 14-GHz bandwidth and 25-dBm RF output power and a 20-mum-diameter photodiode exhibited 30-GHz bandwidth and 15.5-dBm RF output power. The saturation current-bandwidth products are 1820 mA ldr GHz and 1560 mA GHz for the 40-mum-diameter and 40-mum-diameter devices, respectively.

Andreas Beling - One of the best experts on this subject based on the ideXlab platform.

E A Fitzgerald - One of the best experts on this subject based on the ideXlab platform.

  • high quality germanium Photodiodes integrated on silicon substrates using optimized relaxed graded buffers
    Applied Physics Letters, 1998
    Co-Authors: S B Samavedam, M T Currie, Thomas A Langdo, E A Fitzgerald
    Abstract:

    The integration of Ge photodetectors on silicon substrates is advantageous for various Si-based optoelectronics applications. We have fabricated integrated Ge Photodiodes on a graded optimized relaxed SiGe buffer on Si. The dark current in the Ge mesa diodes, Js=0.15 mA/cm2, is close to the theoretical reverse saturation current and is a record low for Ge diodes integrated on Si substrates. Capacitance measurements indicate that the detectors are capable of operating at high frequencies (2.35 GHz). The Photodiodes exhibit an external quantum efficiency of η=12.6% at λ=1.3 μm laser excitation in the Photodiodes. The improvement in Ge materials quality and photodiode performance is derived from an optimized relaxed buffer process that includes a chemical mechanical polishing step within the dislocated epitaxial structure.

Henk Derks - One of the best experts on this subject based on the ideXlab platform.

  • Wafer Level High-Speed Germanium Photodiode Array Integration
    IEEE Journal of Selected Topics in Quantum Electronics, 2011
    Co-Authors: Christophe Kopp, Alexandre Ferron, Jean-michel Hartmann, Maryse Fournier, Emmanuel Augendre, Philippe Grosse, Jean-marc Fedeli, Henk Derks
    Abstract:

    High-density germanium photodiode arrays are integrated on top of a dummy CMOS 200-mm Silicon wafer. Using a conventional available semiconductor fabrication line, the target specifications are reached with a yield exceeding 99% for several thousands of tested Photodiodes with respect to bandwidth, responsivity, and dark current. A very low dark current density in the range of 7 mA/cm2 is obtained. A median bandwidth above 9 GHz is reached with a large 30-μm diameter photodiode.

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