The Experts below are selected from a list of 264 Experts worldwide ranked by ideXlab platform
Yu. G. Gurevich - One of the best experts on this subject based on the ideXlab platform.
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Unusual nonlinear Current-Voltage Characteristics of a metal-intrinsic semiconductor-metal barrierless structure
Journal of Applied Physics, 2015Co-Authors: A. Meriuts, Yu. G. GurevichAbstract:A nonlinear model for the electric Current in a metal-intrinsic semiconductor-metal structure without potential barriers in contacts is considered using a drift diffusion approach. An analytical solution of the continuity equations and the Current-Voltage characteristic for various recombination rates in the contacts are obtained. It is shown that the Current-Voltage Characteristics of such a structure exhibit not only linear behavior, corresponding to Ohm's law, but may also possess properties of Current-Voltage Characteristics of the rectifier diode. It is also possible Current-Voltage Characteristics with saturation in both forward and backward directions. Physical model that explains the obtained results is proposed.
D. M. Gokhfeld - One of the best experts on this subject based on the ideXlab platform.
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Description of hysteretic Current-Voltage Characteristics of SNS junctions
Superconductor Science and Technology, 2006Co-Authors: D. M. GokhfeldAbstract:Simplified model for Current-Voltage Characteristics of weak links is suggested. It is based on an approach considering the multiple Andreev reflection in metallic Josephson junction. The model allows to calculate Current-Voltage Characteristics of the superconductor - normal metal - superconductor junctions with different thicknesses of normal layer at different temperatures. A hysteretic peculiarity of V (I) dependence is described as result of the negative differential resistance. The Current-Voltage characteristic of high-Tc composite YBCO +BaPbO3 were computed.
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Current-Voltage Characteristics of a foamed Bi_1.8Pb_0.3Sr_2Ca_2Cu_3O_ x high-temperature superconductor with fractal cluster structure
Physics of the Solid State, 2006Co-Authors: D. A. Balaev, I. L. Belozerova, D. M. Gokhfeld, L. V. Kashkina, Yu. I. Kuzmin, C. R. Michel, M. I. Petrov, S. I. Popkov, K. A. ShaikhutdinovAbstract:The influence of the structure of foamed polycrystalline bismuth-based superconductors on their critical Currents and Current-Voltage Characteristics is studied. It is found that superconducting foams have a fractal structure, and the fractal dimension of the boundary between the normal and superconducting phases is estimated. The magnetic and transport properties of superconducting foams are investigated, and the Current-Voltage Characteristics are obtained in a wide range of Currents. The effect of percolation phenomena on vortex pinning in a foamed superconductor is considered. The Current-Voltage Characteristics of the superconducting foams at the beginning of the resistive transition are found to be in good agreement with a model in which a magnetic flux is assumed to be trapped in the fractal clusters of a normal phase.
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Current-Voltage Characteristics of a foamed Bi1.8Pb0.3Sr2Ca2Cu3O x high-temperature superconductor with fractal cluster structure
Physics of the Solid State, 2006Co-Authors: D. A. Balaev, I. L. Belozerova, D. M. Gokhfeld, L. V. Kashkina, C. R. Michel, M. I. Petrov, S. I. Popkov, Yu. I. Kuz’min, K. A. ShaikhutdinovAbstract:The influence of the structure of foamed polycrystalline bismuth-based superconductors on their critical Currents and Current-Voltage Characteristics is studied. It is found that superconducting foams have a fractal structure, and the fractal dimension of the boundary between the normal and superconducting phases is estimated. The magnetic and transport properties of superconducting foams are investigated, and the Current-Voltage Characteristics are obtained in a wide range of Currents. The effect of percolation phenomena on vortex pinning in a foamed superconductor is considered. The Current-Voltage Characteristics of the superconducting foams at the beginning of the resistive transition are found to be in good agreement with a model in which a magnetic flux is assumed to be trapped in the fractal clusters of a normal phase.
Sten-eric Lindquist - One of the best experts on this subject based on the ideXlab platform.
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Theoretical Models for the Action Spectrum and the Current-Voltage Characteristics of Microporous Semiconductor Films in Photoelectrochemical Cells
The Journal of Physical Chemistry, 1994Co-Authors: Sven Soedergren, Anders Hagfeldt, Joergen Olsson, Sten-eric LindquistAbstract:Theoretical Models for the Action Spectrum and the Current-Voltage Characteristics of Microporous Semiconductor Films in Photoelectrochemical Cells
J E Cotter - One of the best experts on this subject based on the ideXlab platform.
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suns photoluminescence contactless determination of Current Voltage Characteristics of silicon wafers
Applied Physics Letters, 2005Co-Authors: Thorsten Trupke, R A Bardos, Malcolm Abbott, J E CotterAbstract:In good silicon solar cells, the separation of the quasi-Fermi energies Δη in the bulk is equivalent to the cell Voltage. Photoluminescence is used to measure Δη in both bifacial solar cells and partly processed solar cells. The bifacial cells are used to demonstrate that simultaneous measurement of the photoluminescence signal and of the variable incident light intensity yields pseudo Current-Voltage Characteristics, equivalent to Suns-open circuit Voltage (VOC) measurements, but in contactless mode. The applicability of this method to unfinished solar cells, without the need for a solar cell structure, is demonstrated on silicon wafers after various processing steps.
A. Meriuts - One of the best experts on this subject based on the ideXlab platform.
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Unusual nonlinear Current-Voltage Characteristics of a metal-intrinsic semiconductor-metal barrierless structure
Journal of Applied Physics, 2015Co-Authors: A. Meriuts, Yu. G. GurevichAbstract:A nonlinear model for the electric Current in a metal-intrinsic semiconductor-metal structure without potential barriers in contacts is considered using a drift diffusion approach. An analytical solution of the continuity equations and the Current-Voltage characteristic for various recombination rates in the contacts are obtained. It is shown that the Current-Voltage Characteristics of such a structure exhibit not only linear behavior, corresponding to Ohm's law, but may also possess properties of Current-Voltage Characteristics of the rectifier diode. It is also possible Current-Voltage Characteristics with saturation in both forward and backward directions. Physical model that explains the obtained results is proposed.