The Experts below are selected from a list of 45402 Experts worldwide ranked by ideXlab platform
Guido Groeseneken - One of the best experts on this subject based on the ideXlab platform.
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channel hot carrier Degradation Mechanism in long short channel n finfets
IEEE Transactions on Electron Devices, 2013Co-Authors: Philippe Roussel, Robin Degraeve, Jacopo Franco, Thomas Chiarella, Thomas Kauerauf, B Kaczer, M Aoulaiche, N Horiguchi, Guido GroesenekenAbstract:The channel hot carrier Degradation Mechanisms in n-FinFET devices are studied. In long channel devices, interface Degradation by hot carriers mainly degrades the device at the maximum impact ionization condition (VG ~ VD/2). At higher VG closer to VD, cold and hot carrier injection to the oxide bulk defect increases and dominates at the VG=VD stress condition. On the other hand, in short channel devices, hot carriers are generated continuously with respect to VG and highly at VG=VD, and this hot carrier injection into the oxide bulk defect is the main Degradation Mechanism.
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Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs
IEEE Transactions on Electron Devices, 2013Co-Authors: Philippe Roussel, Ben Kaczer, Marc Aoulaiche, Naoto Horiguchi, Robin Degraeve, Jacopo Franco, Thomas Chiarella, Thomas Kauerauf, Guido GroesenekenAbstract:The channel hot carrier Degradation Mechanisms in n-FinFET devices are studied. In long channel devices, interface Degradation by hot carriers mainly degrades the device at the maximum impact ionization condition (VG ~ VD/2). At higher VG closer to VD, cold and hot carrier injection to the oxide bulk defect increases and dominates at the VG=VD stress condition. On the other hand, in short channel devices, hot carriers are generated continuously with respect to VG and highly at VG=VD, and this hot carrier injection into the oxide bulk defect is the main Degradation Mechanism.
Ben Kaczer - One of the best experts on this subject based on the ideXlab platform.
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Off-state stress Degradation Mechanism on advanced p-MOSFETs
2015 International Conference on IC Design & Technology (ICICDT), 2015Co-Authors: Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri LintenAbstract:Deep insights into the Off-State Stress (OSS) Degradation Mechanism on p-MOSFETs with High-K/Metal Gate technology are presented in this paper. Large subthreshold slope Degradation, or positive Vth shift is observed in high, or low Vth devices, where both phenomena impact the off current Degradation. The OSS Degradation Mechanism in pMOS is generated by (1) hot carrier generation close to the drain junction by impact ionization, then (2) hot electron injection into the oxide bulk defects, and (3) Si/oxide interface Degradation. Both TCAD simulations and measurement with VGate-to-Drain modulation demonstrate the Mechanism. The Vth shift in OSS is toward an opposite direction compared to CHC or BTI, which suggest a means to restore the Vth to the initial value after the OSS Degradation.
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ICICDT - Off-state stress Degradation Mechanism on advanced p-MOSFETs
2015 International Conference on IC Design & Technology (ICICDT), 2015Co-Authors: Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri LintenAbstract:Deep insights into the Off-State Stress (OSS) Degradation Mechanism on p-MOSFETs with High-K/Metal Gate technology are presented in this paper. Large subthreshold slope Degradation, or positive Vth shift is observed in high, or low Vth devices, where both phenomena impact the off current Degradation. The OSS Degradation Mechanism in pMOS is generated by (1) hot carrier generation close to the drain junction by impact ionization, then (2) hot electron injection into the oxide bulk defects, and (3) Si/oxide interface Degradation. Both TCAD simulations and measurement with VGate-to-Drain modulation demonstrate the Mechanism. The Vth shift in OSS is toward an opposite direction compared to CHC or BTI, which suggest a means to restore the Vth to the initial value after the OSS Degradation.
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Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs
IEEE Transactions on Electron Devices, 2013Co-Authors: Philippe Roussel, Ben Kaczer, Marc Aoulaiche, Naoto Horiguchi, Robin Degraeve, Jacopo Franco, Thomas Chiarella, Thomas Kauerauf, Guido GroesenekenAbstract:The channel hot carrier Degradation Mechanisms in n-FinFET devices are studied. In long channel devices, interface Degradation by hot carriers mainly degrades the device at the maximum impact ionization condition (VG ~ VD/2). At higher VG closer to VD, cold and hot carrier injection to the oxide bulk defect increases and dominates at the VG=VD stress condition. On the other hand, in short channel devices, hot carriers are generated continuously with respect to VG and highly at VG=VD, and this hot carrier injection into the oxide bulk defect is the main Degradation Mechanism.
Marc Aoulaiche - One of the best experts on this subject based on the ideXlab platform.
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Off-state stress Degradation Mechanism on advanced p-MOSFETs
2015 International Conference on IC Design & Technology (ICICDT), 2015Co-Authors: Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri LintenAbstract:Deep insights into the Off-State Stress (OSS) Degradation Mechanism on p-MOSFETs with High-K/Metal Gate technology are presented in this paper. Large subthreshold slope Degradation, or positive Vth shift is observed in high, or low Vth devices, where both phenomena impact the off current Degradation. The OSS Degradation Mechanism in pMOS is generated by (1) hot carrier generation close to the drain junction by impact ionization, then (2) hot electron injection into the oxide bulk defects, and (3) Si/oxide interface Degradation. Both TCAD simulations and measurement with VGate-to-Drain modulation demonstrate the Mechanism. The Vth shift in OSS is toward an opposite direction compared to CHC or BTI, which suggest a means to restore the Vth to the initial value after the OSS Degradation.
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ICICDT - Off-state stress Degradation Mechanism on advanced p-MOSFETs
2015 International Conference on IC Design & Technology (ICICDT), 2015Co-Authors: Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri LintenAbstract:Deep insights into the Off-State Stress (OSS) Degradation Mechanism on p-MOSFETs with High-K/Metal Gate technology are presented in this paper. Large subthreshold slope Degradation, or positive Vth shift is observed in high, or low Vth devices, where both phenomena impact the off current Degradation. The OSS Degradation Mechanism in pMOS is generated by (1) hot carrier generation close to the drain junction by impact ionization, then (2) hot electron injection into the oxide bulk defects, and (3) Si/oxide interface Degradation. Both TCAD simulations and measurement with VGate-to-Drain modulation demonstrate the Mechanism. The Vth shift in OSS is toward an opposite direction compared to CHC or BTI, which suggest a means to restore the Vth to the initial value after the OSS Degradation.
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Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs
IEEE Transactions on Electron Devices, 2013Co-Authors: Philippe Roussel, Ben Kaczer, Marc Aoulaiche, Naoto Horiguchi, Robin Degraeve, Jacopo Franco, Thomas Chiarella, Thomas Kauerauf, Guido GroesenekenAbstract:The channel hot carrier Degradation Mechanisms in n-FinFET devices are studied. In long channel devices, interface Degradation by hot carriers mainly degrades the device at the maximum impact ionization condition (VG ~ VD/2). At higher VG closer to VD, cold and hot carrier injection to the oxide bulk defect increases and dominates at the VG=VD stress condition. On the other hand, in short channel devices, hot carriers are generated continuously with respect to VG and highly at VG=VD, and this hot carrier injection into the oxide bulk defect is the main Degradation Mechanism.
Naoto Horiguchi - One of the best experts on this subject based on the ideXlab platform.
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Off-state stress Degradation Mechanism on advanced p-MOSFETs
2015 International Conference on IC Design & Technology (ICICDT), 2015Co-Authors: Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri LintenAbstract:Deep insights into the Off-State Stress (OSS) Degradation Mechanism on p-MOSFETs with High-K/Metal Gate technology are presented in this paper. Large subthreshold slope Degradation, or positive Vth shift is observed in high, or low Vth devices, where both phenomena impact the off current Degradation. The OSS Degradation Mechanism in pMOS is generated by (1) hot carrier generation close to the drain junction by impact ionization, then (2) hot electron injection into the oxide bulk defects, and (3) Si/oxide interface Degradation. Both TCAD simulations and measurement with VGate-to-Drain modulation demonstrate the Mechanism. The Vth shift in OSS is toward an opposite direction compared to CHC or BTI, which suggest a means to restore the Vth to the initial value after the OSS Degradation.
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ICICDT - Off-state stress Degradation Mechanism on advanced p-MOSFETs
2015 International Conference on IC Design & Technology (ICICDT), 2015Co-Authors: Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri LintenAbstract:Deep insights into the Off-State Stress (OSS) Degradation Mechanism on p-MOSFETs with High-K/Metal Gate technology are presented in this paper. Large subthreshold slope Degradation, or positive Vth shift is observed in high, or low Vth devices, where both phenomena impact the off current Degradation. The OSS Degradation Mechanism in pMOS is generated by (1) hot carrier generation close to the drain junction by impact ionization, then (2) hot electron injection into the oxide bulk defects, and (3) Si/oxide interface Degradation. Both TCAD simulations and measurement with VGate-to-Drain modulation demonstrate the Mechanism. The Vth shift in OSS is toward an opposite direction compared to CHC or BTI, which suggest a means to restore the Vth to the initial value after the OSS Degradation.
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Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs
IEEE Transactions on Electron Devices, 2013Co-Authors: Philippe Roussel, Ben Kaczer, Marc Aoulaiche, Naoto Horiguchi, Robin Degraeve, Jacopo Franco, Thomas Chiarella, Thomas Kauerauf, Guido GroesenekenAbstract:The channel hot carrier Degradation Mechanisms in n-FinFET devices are studied. In long channel devices, interface Degradation by hot carriers mainly degrades the device at the maximum impact ionization condition (VG ~ VD/2). At higher VG closer to VD, cold and hot carrier injection to the oxide bulk defect increases and dominates at the VG=VD stress condition. On the other hand, in short channel devices, hot carriers are generated continuously with respect to VG and highly at VG=VD, and this hot carrier injection into the oxide bulk defect is the main Degradation Mechanism.
Zheng Peng - One of the best experts on this subject based on the ideXlab platform.
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a thermal Degradation Mechanism of polyvinyl alcohol silica nanocomposites
Polymer Degradation and Stability, 2007Co-Authors: Zheng Peng, Lingxue KongAbstract:Abstract The thermal Degradation Mechanism of a novel polyvinyl alcohol/silica (PVA/SiO 2 ) nanocomposite prepared with self-assembly and solution-compounding techniques is presented. Due to the presence of SiO 2 nanoparticles, the thermal Degradation of the nanocomposite, compared to that of pure PVA, occurs at higher temperatures, requires more reaction activation energy ( E ), and possesses higher reaction order ( n ). The PVA/SiO 2 nanocomposite, similar to the pure PVA, thermally degrades as a two-step-Degradation in the temperature ranges of 300–450 °C and 450–550 °C, respectively. However, the introduction of SiO 2 nanoparticles leads to a remarkable change in the Degradation Mechanism. The Degradation products identified by Fourier transform infrared/thermogravimetric analysis (FTIR/TGA) and pyrolysis-gas chromatography/mass spectrometric analysis (Py-GC/MS) suggests that the first Degradation step of the nanocomposite mainly involves the elimination reactions of H 2 O and residual acetate groups as well as quite a few chain-scission reactions. The second Degradation step is dominated by chain-scission reactions and cyclization reactions, and continual elimination of residual acetate groups is also found in this step.
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A thermal Degradation Mechanism of polyvinyl alcohol/silica nanocomposites
Polymer Degradation and Stability, 2007Co-Authors: Zheng Peng, Lingxue KongAbstract:Abstract The thermal Degradation Mechanism of a novel polyvinyl alcohol/silica (PVA/SiO 2 ) nanocomposite prepared with self-assembly and solution-compounding techniques is presented. Due to the presence of SiO 2 nanoparticles, the thermal Degradation of the nanocomposite, compared to that of pure PVA, occurs at higher temperatures, requires more reaction activation energy ( E ), and possesses higher reaction order ( n ). The PVA/SiO 2 nanocomposite, similar to the pure PVA, thermally degrades as a two-step-Degradation in the temperature ranges of 300–450 °C and 450–550 °C, respectively. However, the introduction of SiO 2 nanoparticles leads to a remarkable change in the Degradation Mechanism. The Degradation products identified by Fourier transform infrared/thermogravimetric analysis (FTIR/TGA) and pyrolysis-gas chromatography/mass spectrometric analysis (Py-GC/MS) suggests that the first Degradation step of the nanocomposite mainly involves the elimination reactions of H 2 O and residual acetate groups as well as quite a few chain-scission reactions. The second Degradation step is dominated by chain-scission reactions and cyclization reactions, and continual elimination of residual acetate groups is also found in this step.
