The Experts below are selected from a list of 282 Experts worldwide ranked by ideXlab platform

E B Yakimov - One of the best experts on this subject based on the ideXlab platform.

  • SEM–EBIC investigation of silicon, compensated by zinc during high temperature diffusion annealing
    Journal of Materials Science: Materials in Electronics, 2008
    Co-Authors: E B Yakimov, V. V. Privezentsev
    Abstract:

    The properties of n-type silicon doped with phosphorus and compensated by zinc during high temperature diffusion annealing with the subsequent quenching were investigated by the electron beam induced current method in a scanning electron microscope. The investigations were carried out with the electron beam perpendicularly to the Schottky barrier playing a role of collector. The minority carrier diffusion length L and the Depletion Region Width W were obtained by fitting the experimental dependence of collected current on beam energy. Some extended defects were revealed, which were associated with zinc precipitates and/or dislocations.

  • mapping of diffusion length and Depletion Region Width in schottky diodes
    Semiconductor Science and Technology, 1992
    Co-Authors: O V Kononchuk, E B Yakimov
    Abstract:

    The possibilities of Depletion Region Width (W) and minority carrier diffusion length mapping using the electron-beam-induced capacitance (EBIcap) mode and measurements of d/c/dW are discussed. A model of EBIcap signal formation is proposed. It is shown that these techniques are more suitable than electron-beam-induced current (EBIC) for local measurements and mapping of W.

Bashar Bakour - One of the best experts on this subject based on the ideXlab platform.

  • influence of Depletion Region Width on performance of solar cell under sunlight concentration
    Energy Procedia, 2011
    Co-Authors: Khalaf Al Abdullah, Bashar Bakour
    Abstract:

    Abstract A new interpretation of high injection effect of minority carriers,np, which is happened in solar cell under sunlight concentration and imposed a limitation on its expected efficiency- has been introduced. This interpretation declare that: increasing of minority carrier, np, recombination current Irecom in deplation Region when sunlight concentration C increase,s due to the Depletion layer widen because the increasing of drift electric field at the junction boundary correspond to population inversion phenomena which happens at the interfaces between the base Region and the Depletion Region. Experiments was performed with operating solar cells under high injection conditions (sunlight concentration simulator) to get I-V characteristics, then we characterize the relation between the Depletion Region Width w and Irecom, by suggesting a new model which enable us to optimize a solar sell under sunlight concentration. In consequence we cocnlude that: Irecom is responsible of depleting a significant part of minority carrier, consequently, Irecom causes the solar cell efficiency degradation.

Khalaf Al Abdullah - One of the best experts on this subject based on the ideXlab platform.

  • influence of Depletion Region Width on performance of solar cell under sunlight concentration
    Energy Procedia, 2011
    Co-Authors: Khalaf Al Abdullah, Bashar Bakour
    Abstract:

    Abstract A new interpretation of high injection effect of minority carriers,np, which is happened in solar cell under sunlight concentration and imposed a limitation on its expected efficiency- has been introduced. This interpretation declare that: increasing of minority carrier, np, recombination current Irecom in deplation Region when sunlight concentration C increase,s due to the Depletion layer widen because the increasing of drift electric field at the junction boundary correspond to population inversion phenomena which happens at the interfaces between the base Region and the Depletion Region. Experiments was performed with operating solar cells under high injection conditions (sunlight concentration simulator) to get I-V characteristics, then we characterize the relation between the Depletion Region Width w and Irecom, by suggesting a new model which enable us to optimize a solar sell under sunlight concentration. In consequence we cocnlude that: Irecom is responsible of depleting a significant part of minority carrier, consequently, Irecom causes the solar cell efficiency degradation.

O V Kononchuk - One of the best experts on this subject based on the ideXlab platform.

Yi Zhang - One of the best experts on this subject based on the ideXlab platform.

  • Tailoring the defects and carrier density for beyond 10% efficient CZTSe thin film solar cells
    Solar Energy Materials and Solar Cells, 2020
    Co-Authors: Jianjun Li, Hyeonsik Cheong, Hui Li, Yi Zhang
    Abstract:

    The defects states and carrier density of CZTSe absorber layers are two of the crucial factors that decide the photovoltaic performance of CZTSe thin film solar cells. Fine tailoring the defects and carrier density is a key to push the power conversion efficiency of CZTSe solar cells to a more competitive level. In this work, the phase properties, defect states, and carrier density of CZTSe thin film are well controlled by fine tuning the ratio of Zn/Sn in the range from 0.75 to 1.27. Capacity-Voltage measurements and Admittance Spectroscopy are used to characterize the carrier density, Depletion Region Width, and defect states of the CZTSe solar cells. The results indicate that the defects states and carrier density of CZTSe layer are very sensitive to the ratio of Zn/Sn. Combining experimental results and numerical simulation, the statistic regularities of the photovoltaic parameters of the CZTSe solar cells with different ratios of Zn/Sn is well explained. The increase of VOC of CZTSe solar cells with the ratio of Zn/Sn is related to both the increased carrier density and the decreased deep level defects states. The decline of JSC of the Zn-rich solar cells is caused by both the shrunken Depletion Region Width and a large barrier caused by ZnSe phase. This barrier is the cause for a low fill factor in the Zn-rich solar cells. Overall, the CZTSe solar cells with a stoichiometric ratio of Zn/Sn=1.02 have favorable defects property and carrier density, thus resulting in the highest photovoltaic efficiency of 10.21%.

  • 10 efficiency cu2znsn s se 4 thin film solar cells fabricated by magnetron sputtering with enlarged Depletion Region Width
    Science & Engineering Faculty, 2016
    Co-Authors: Jianjun Li, Hongxia Wang, Jiang Tang, Cheng Chen, Yi Zhang
    Abstract:

    High performance Cu2ZnSn(S,Se)4 (CZTSSe) solar cells are fabricated by selenization of the precursor films of Mo/Sn/Cu/ZnS/Sn/ZnS/Cu deposited by magnetron sputtering. The investigation of the solar cells with different Zn/Sn ratio in CZTSSe film discloses that the charge carrier concentration and Depletion Region Width of the device is very sensitive to Zn/Sn ratio of CZTSSe layer. The CZTSSe film with Zn/Sn=1.05 has lower carrier density (5.0×1015 cm−3), which is half of the cell with Zn/Sn=1.12, whereas the Depletion Region at the CdS/CZTSSe hetero-junction interface of the former (200–250 nm) is 100 nm longer than the latter. As a result, better collection of photo-generated charge carrier is found with the cell with longer Wd in the longer wavelength Region above 800 nm. Therefore, the average power conversion efficiency is increased from 6.53% to 9.16% with enlarged Depletion Region Width, and the best performance with 10.2% efficiency is achieved.

  • 10% Efficiency Cu2ZnSn(S,Se)4 thin film solar cells fabricated by magnetron sputtering with enlarged Depletion Region Width
    Solar Energy Materials and Solar Cells, 2016
    Co-Authors: Jianjun Li, Hongxia Wang, Jiang Tang, Cheng Chen, Yi Zhang
    Abstract:

    High performance Cu2ZnSn(S,Se)4 (CZTSSe) solar cells are fabricated by selenization of the precursor films of Mo/Sn/Cu/ZnS/Sn/ZnS/Cu deposited by magnetron sputtering. The investigation of the solar cells with different Zn/Sn ratio in CZTSSe film discloses that the charge carrier concentration and Depletion Region Width of the device is very sensitive to Zn/Sn ratio of CZTSSe layer. The CZTSSe film with Zn/Sn=1.05 has lower carrier density (5.0×1015 cm−3), which is half of the cell with Zn/Sn=1.12, whereas the Depletion Region at the CdS/CZTSSe hetero-junction interface of the former (200–250 nm) is 100 nm longer than the latter. As a result, better collection of photo-generated charge carrier is found with the cell with longer Wd in the longer wavelength Region above 800 nm. Therefore, the average power conversion efficiency is increased from 6.53% to 9.16% with enlarged Depletion Region Width, and the best performance with 10.2% efficiency is achieved.