The Experts below are selected from a list of 113262 Experts worldwide ranked by ideXlab platform
P S Patil - One of the best experts on this subject based on the ideXlab platform.
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fabrication of cu2sns3 thin film solar cells using pulsed laser Deposition Technique
Solar Energy Materials and Solar Cells, 2015Co-Authors: S A Vanalakar, G L Agawane, A S Kamble, Chang Woo Hong, P S PatilAbstract:Abstract Ternary chalcogenide semiconductor Cu 2 SnS 3 (CTS) is an emerging material, attracting increasing interest for the applications in thin film solar cells. Here we report a pulsed laser Deposition route to synthesize compact and single phase CTS thin films for the first time. The effects of the annealing temperature on the formation of CTS films were investigated. XRD and Raman studies revealed that the annealed CTS thin films have a polycrystalline nature with a cubic crystal structure, and the crystalline size of the CTS thin films increases as the annealing temperature increases. The direct optical band gap energy of the CTS thin film annealed at 400 °C is found to be 1.01 eV. Hall effect measurements indicate that the film has a p-type conductivity with a hole mobility of 0.51 cm 2 /V s. Finally, a thin film solar cell was fabricated with a SLG/Mo/CTS/CdS/i-ZnO/AZO/Al structure. A photo-electric conversion efficiency of 0.82% was achieved with a short circuit current density of 11.90 mA/cm 2 . We are successful in achieving the better values of V OC for the CTS solar cells. The route developed here may provide an alternative approach to produce CTS thin film solar cells.
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studies of compositional dependent czts thin film solar cells by pulsed laser Deposition Technique an attempt to improve the efficiency
Journal of Alloys and Compounds, 2012Co-Authors: A V Moholkar, S S Shinde, G L Agawane, S H Jo, K Y Rajpure, P S Patil, C H BhosaleAbstract:Abstract The performance of CZTS thin films deposited by using pulsed laser Deposition Technique is investigated as a function of target composition. The chemical composition ratio a = Cu/(Zn + Sn) of the target material has been varied from 0.8 to 1.2 in step of 0.1 by keeping Zn/Sn constant. The effect of the chemical composition in the precursor thin films on the structural, morphological, chemical and optical properties of the CZTS thin films has been investigated. X-ray diffraction and X-ray photoelectron spectroscopy studies showed that the annealed CZTS thin films are of a single kesterite crystal structure without any other secondary phases. The direct band gap energy of the CZTS thin films is found to decrease from 1.72–1.53 eV with increase of ‘a’. The estimated band-gap energy from the quantum efficiency measurements is about 1.54 eV. The solar cell fabricated with Glass/Mo/CZTS/CdS/ZnO:Al/Al structure grown using [a = Cu/(Zn + Sn) = 1.1] showed the best conversion efficiency of 4.13% with Voc = 700 mV, Jsc = 10.01 mA/cm2 and FF = 0.59.
Joop Schoonman - One of the best experts on this subject based on the ideXlab platform.
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Tungsten trioxide thin films prepared by electrostatic spray Deposition Technique
Thin Solid Films, 2007Co-Authors: Camelia Matei Ghimbeu, Robert C. Van Landschoot, Joop Schoonman, Martine LumbrerasAbstract:Tungsten trioxide (WO3) thin films deposited on a Pt-coated alumina substrate using the electrostatic spray Deposition (ESD) Technique is reported in this paper. As precursor solution, tungsten (VI) ethoxide in ethanol was used. The morphology and the microstructure of the films were studied using scanning electron microscopy coupled with energy dispersive X-ray analysis, transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. Dense to porous morphologies were obtained by tuning the Deposition temperature. Impedance spectroscopy and current-voltage measurements were used to study the electrical behaviour of the films in air, in temperature range 300-500????C. The activation energy was estimated from Arrhenius plots. Considering the obtained results, the ESD Technique proved to be an effective Technique for the fabrication of porous tungsten trioxide thin films. ?? 2007.
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functional ceramic films with reticular structures prepared by electrostatic spray Deposition Technique
Journal of The Electrochemical Society, 1997Co-Authors: C H Chen, E M Kelder, Joop SchoonmanAbstract:During the study of the electrostatic spray Deposition Technique, porous LiCoO{sub 2} thin layers with reticular structures were formed. This discovery has been successfully extended to many other important ceramic materials used in electrochemical devices such as LiMn{sub 2}O{sub 4}, LiNiO{sub 2}, LiCoO{sub 2}, Li{sub 3}PO{sub 4}, Li{sub 0.1}BPO{sub 4}, CoO, MnO{sub 2}, TiO{sub 2}, LaCoO{sub 3}, and SnO{sub 2} {center_dot} MnO{sub 2}. The pore size of these layers can be varied by adjusting the feed rate and/or the composition of the precursor solution. These reticular films are expected to have various applications in electrochemical devices, catalysts, and inorganic membranes.
G L Agawane - One of the best experts on this subject based on the ideXlab platform.
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fabrication of cu2sns3 thin film solar cells using pulsed laser Deposition Technique
Solar Energy Materials and Solar Cells, 2015Co-Authors: S A Vanalakar, G L Agawane, A S Kamble, Chang Woo Hong, P S PatilAbstract:Abstract Ternary chalcogenide semiconductor Cu 2 SnS 3 (CTS) is an emerging material, attracting increasing interest for the applications in thin film solar cells. Here we report a pulsed laser Deposition route to synthesize compact and single phase CTS thin films for the first time. The effects of the annealing temperature on the formation of CTS films were investigated. XRD and Raman studies revealed that the annealed CTS thin films have a polycrystalline nature with a cubic crystal structure, and the crystalline size of the CTS thin films increases as the annealing temperature increases. The direct optical band gap energy of the CTS thin film annealed at 400 °C is found to be 1.01 eV. Hall effect measurements indicate that the film has a p-type conductivity with a hole mobility of 0.51 cm 2 /V s. Finally, a thin film solar cell was fabricated with a SLG/Mo/CTS/CdS/i-ZnO/AZO/Al structure. A photo-electric conversion efficiency of 0.82% was achieved with a short circuit current density of 11.90 mA/cm 2 . We are successful in achieving the better values of V OC for the CTS solar cells. The route developed here may provide an alternative approach to produce CTS thin film solar cells.
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studies of compositional dependent czts thin film solar cells by pulsed laser Deposition Technique an attempt to improve the efficiency
Journal of Alloys and Compounds, 2012Co-Authors: A V Moholkar, S S Shinde, G L Agawane, S H Jo, K Y Rajpure, P S Patil, C H BhosaleAbstract:Abstract The performance of CZTS thin films deposited by using pulsed laser Deposition Technique is investigated as a function of target composition. The chemical composition ratio a = Cu/(Zn + Sn) of the target material has been varied from 0.8 to 1.2 in step of 0.1 by keeping Zn/Sn constant. The effect of the chemical composition in the precursor thin films on the structural, morphological, chemical and optical properties of the CZTS thin films has been investigated. X-ray diffraction and X-ray photoelectron spectroscopy studies showed that the annealed CZTS thin films are of a single kesterite crystal structure without any other secondary phases. The direct band gap energy of the CZTS thin films is found to decrease from 1.72–1.53 eV with increase of ‘a’. The estimated band-gap energy from the quantum efficiency measurements is about 1.54 eV. The solar cell fabricated with Glass/Mo/CZTS/CdS/ZnO:Al/Al structure grown using [a = Cu/(Zn + Sn) = 1.1] showed the best conversion efficiency of 4.13% with Voc = 700 mV, Jsc = 10.01 mA/cm2 and FF = 0.59.
Ramphal Sharma - One of the best experts on this subject based on the ideXlab platform.
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studies on growth and characterization of ternary cds1 xsex alloy thin films deposited by chemical bath Deposition Technique
Applied Surface Science, 2008Co-Authors: J B Chaudhari, N G Deshpande, Y G Gudage, Arindam Ghosh, V B Huse, Ramphal SharmaAbstract:Abstract Ternary alloyed CdS 1− x Se x thin films of variable composition ‘ x ’ were grown by the simple and economical chemical bath Deposition Technique. The as-grown thin films were characterized for structural, compositional, surface morphological, optical and electrical studies. The X-ray diffraction (XRD) patterns of the sample indicated that all the samples were polycrystalline in nature with hexagonal structure. Scanning electron microscopy (SEM) micrographs showed uniform morphology with spherical shaped grains distributed over entire glass substrate. EDAX studies confirmed that the CdS 1− x Se x films were having approximately same stoichiometry initially as well as finally. Room temperature optical measurements showed that band gap engineering could be realized in CdS 1− x Se x thin films via modulation in composition ‘ x ’. Electrical resistivity of CdS 1− x Se x thin films for various compositions was found to be low. The broad and fine tunable band gap properties of ternary CdS 1− x Se x thin films have potential applications in opto-electronic devices.
T Seth - One of the best experts on this subject based on the ideXlab platform.
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growth of cubis2 thin films by chemical bath Deposition Technique from an acidic bath
Materials Chemistry and Physics, 2004Co-Authors: P S Sonawane, P A Wani, L A Patil, T SethAbstract:Abstract CuBiS 2 thin films have been deposited on a glass substrate by chemical bath Deposition (CBD) Technique in an acidic medium. Films are deposited for various concentrations of copper and bismuth. The effect of Deposition time and temperature on growth of these films have been studied. To obtain good quality films, the films are grown using a complexing agent. The disodium salt of [EDTA] is used as a complexing agent. The effect of Deposition time, temperature and pH on growth of these films are reported. Optical, structural and electrical properties of these films are also reported.
