The Experts below are selected from a list of 240 Experts worldwide ranked by ideXlab platform

Marcel Filoche - One of the best experts on this subject based on the ideXlab platform.

  • localization landscape theory of disorder in semiconductors iii application to carrier transport and recombination in light emitting diodes
    Physical Review B, 2017
    Co-Authors: Marco Piccardo, Svitlana Mayboroda, Lucio Martinelli, J Peretti, James S Speck, C Weisbuch, Marcel Filoche
    Abstract:

    This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the Disordered System change dramatically the energy barriers acting on the perpendicular transport of heterostructures. In addition, they lead to percolative transport through paths of minimal energy in the two-dimensional (2D) landscape of Disordered energies of multiple 2D quantum wells. This model solves the carrier dynamics with quantum effects self-consistently and provides a computationally much faster solver when compared with the Schr\"odinger equation resolution. The theory also provides a good approximation to the density of states for the Disordered System over the full range of energies required to account for transport at room temperature. The current-voltage characteristics modeled by three-dimensional simulation of a full nitride-based light emitting diode (LED) structure with compositional material fluctuations closely match the experimental behavior of high-quality blue LEDs. The model allows also a fine analysis of the quantum effects involved in carrier transport through such complex heterostructures. Finally, details of carrier population and recombination in the different quantum wells are given.

  • localization landscape theory of disorder in semiconductors iii application to carrier transport and recombination in light emitting diodes
    Physical Review B, 2017
    Co-Authors: Chikang Li, Marco Piccardo, Svitlana Mayboroda, Lucio Martinelli, J Peretti, James S Speck, C Weisbuch, Marcel Filoche, Li Shuo Lu, Yuhrenn Wu
    Abstract:

    This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the Disordered System change dramatically the energy barriers acting on the perpendicular transport of heterostructures. In addition they lead to percolative transport through paths of minimal energy in the 2D landscape of Disordered energies of multiple 2D quantum wells. This model solves the carrier dynamics with quantum effects self-consistently and provides a computationally much faster solver when compared with the Schr\"odinger equation resolution. The theory also provides a good approximation to the density of states for the Disordered System over the full range of energies required to account for transport at room-temperature. The current-voltage characteristics modeled by 3-D simulation of a full nitride-based light-emitting diode (LED) structure with compositional material fluctuations closely match the experimental behavior of high quality blue LEDs. The model allows also a fine analysis of the quantum effects involved in carrier transport through such complex heterostructures. Finally, details of carrier population and recombination in the different quantum wells are given.

C Weisbuch - One of the best experts on this subject based on the ideXlab platform.

  • localization landscape theory of disorder in semiconductors iii application to carrier transport and recombination in light emitting diodes
    Physical Review B, 2017
    Co-Authors: Marco Piccardo, Svitlana Mayboroda, Lucio Martinelli, J Peretti, James S Speck, C Weisbuch, Marcel Filoche
    Abstract:

    This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the Disordered System change dramatically the energy barriers acting on the perpendicular transport of heterostructures. In addition, they lead to percolative transport through paths of minimal energy in the two-dimensional (2D) landscape of Disordered energies of multiple 2D quantum wells. This model solves the carrier dynamics with quantum effects self-consistently and provides a computationally much faster solver when compared with the Schr\"odinger equation resolution. The theory also provides a good approximation to the density of states for the Disordered System over the full range of energies required to account for transport at room temperature. The current-voltage characteristics modeled by three-dimensional simulation of a full nitride-based light emitting diode (LED) structure with compositional material fluctuations closely match the experimental behavior of high-quality blue LEDs. The model allows also a fine analysis of the quantum effects involved in carrier transport through such complex heterostructures. Finally, details of carrier population and recombination in the different quantum wells are given.

  • localization landscape theory of disorder in semiconductors iii application to carrier transport and recombination in light emitting diodes
    Physical Review B, 2017
    Co-Authors: Chikang Li, Marco Piccardo, Svitlana Mayboroda, Lucio Martinelli, J Peretti, James S Speck, C Weisbuch, Marcel Filoche, Li Shuo Lu, Yuhrenn Wu
    Abstract:

    This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the Disordered System change dramatically the energy barriers acting on the perpendicular transport of heterostructures. In addition they lead to percolative transport through paths of minimal energy in the 2D landscape of Disordered energies of multiple 2D quantum wells. This model solves the carrier dynamics with quantum effects self-consistently and provides a computationally much faster solver when compared with the Schr\"odinger equation resolution. The theory also provides a good approximation to the density of states for the Disordered System over the full range of energies required to account for transport at room-temperature. The current-voltage characteristics modeled by 3-D simulation of a full nitride-based light-emitting diode (LED) structure with compositional material fluctuations closely match the experimental behavior of high quality blue LEDs. The model allows also a fine analysis of the quantum effects involved in carrier transport through such complex heterostructures. Finally, details of carrier population and recombination in the different quantum wells are given.

Roland Zimmermann - One of the best experts on this subject based on the ideXlab platform.

  • time resolved rayleigh scattering of excitons evidence for level repulsion in a Disordered System
    Physical Review B, 1999
    Co-Authors: Vincenzo Savona, Roland Zimmermann
    Abstract:

    The theory of resonant Rayleigh scattering of light by excitons in a Disordered quantum structure is presented. Disorder is modeled by a random Gauss distributed potential with finite correlation length in space. The time dependent scattered si,anal under pulsed excitation is studied by solving the Schrodinger equation for the exciton center-of-mass motion. The key quantity turns out to be the distribution of energy level distances weighted by the optical matrix elements. The limit of classical center-of-mass motion is derived analytically, while large-scale simulations are performed for the general case. The results show that the quantum-mechanical nature of the exciton motion is responsible for an oscillating behavior of the time dependent intensity. The oscillations originate from an interplay between the quantum-mechanical energy-level repulsion and the correlation induced by the finite correlation length of the disorder. [S0163-1829(99)10031-6].

Jean-claude Garreau - One of the best experts on this subject based on the ideXlab platform.

  • Sensitivity to the initial state of interacting ultracold bosons in Disordered lattices
    Physical Review E : Statistical Nonlinear and Soft Matter Physics, 2012
    Co-Authors: Benoît Vermersch, Jean-claude Garreau
    Abstract:

    Abstract We study the dynamics of a nonlinear one-dimensional Disordered System obtained by coupling the Anderson model with the Gross-Pitaevskii equation. An analytical model provides us with a single quantity globally characterizing the localization of the System. This quantity obeys a scaling law with respect to the width of the initial state, which can be used to characterize the dynamics independently of the initial state.

  • Experimental observation of the Anderson transition with atomic matter waves
    Physical Review Letters, 2008
    Co-Authors: Julien Chabé, Gabriel Lemarié, Benoît Grémaud, Dominique Delande, Pascal Szriftgiser, Jean-claude Garreau
    Abstract:

    We realize experimentally an atom-optics quantum chaotic System, the quasiperiodic kicked rotor, which is equivalent to a 3D Disordered System, that allow us to demonstrate the Anderson metal-insulator transition. Sensitive measurements of the atomic wavefunction dynamics and the use of finite-size scaling techniques make it possible to extract both the critical parameters and the critical exponent of the transition, which is in good agreement with the value obtained in numerical simulations of the 3D Anderson model.

  • experimental observation of the anderson metal insulator transition with atomic matter waves
    Physical Review Letters, 2008
    Co-Authors: Julien Chabé, Gabriel Lemarié, Benoît Grémaud, Dominique Delande, Pascal Szriftgiser, Jean-claude Garreau
    Abstract:

    We realize experimentally an atom-optics quantum-chaotic System, the quasiperiodic kicked rotor, which is equivalent to a 3D Disordered System that allows us to demonstrate the Anderson metal-insulator transition. Sensitive measurements of the atomic wave function and the use of finite-size scaling techniques make it possible to extract both the critical parameters and the critical exponent of the transition, the latter being in good agreement with the value obtained in numerical simulations of the 3D Anderson model.

Marco Piccardo - One of the best experts on this subject based on the ideXlab platform.

  • localization landscape theory of disorder in semiconductors iii application to carrier transport and recombination in light emitting diodes
    Physical Review B, 2017
    Co-Authors: Marco Piccardo, Svitlana Mayboroda, Lucio Martinelli, J Peretti, James S Speck, C Weisbuch, Marcel Filoche
    Abstract:

    This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the Disordered System change dramatically the energy barriers acting on the perpendicular transport of heterostructures. In addition, they lead to percolative transport through paths of minimal energy in the two-dimensional (2D) landscape of Disordered energies of multiple 2D quantum wells. This model solves the carrier dynamics with quantum effects self-consistently and provides a computationally much faster solver when compared with the Schr\"odinger equation resolution. The theory also provides a good approximation to the density of states for the Disordered System over the full range of energies required to account for transport at room temperature. The current-voltage characteristics modeled by three-dimensional simulation of a full nitride-based light emitting diode (LED) structure with compositional material fluctuations closely match the experimental behavior of high-quality blue LEDs. The model allows also a fine analysis of the quantum effects involved in carrier transport through such complex heterostructures. Finally, details of carrier population and recombination in the different quantum wells are given.

  • localization landscape theory of disorder in semiconductors iii application to carrier transport and recombination in light emitting diodes
    Physical Review B, 2017
    Co-Authors: Chikang Li, Marco Piccardo, Svitlana Mayboroda, Lucio Martinelli, J Peretti, James S Speck, C Weisbuch, Marcel Filoche, Li Shuo Lu, Yuhrenn Wu
    Abstract:

    This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the Disordered System change dramatically the energy barriers acting on the perpendicular transport of heterostructures. In addition they lead to percolative transport through paths of minimal energy in the 2D landscape of Disordered energies of multiple 2D quantum wells. This model solves the carrier dynamics with quantum effects self-consistently and provides a computationally much faster solver when compared with the Schr\"odinger equation resolution. The theory also provides a good approximation to the density of states for the Disordered System over the full range of energies required to account for transport at room-temperature. The current-voltage characteristics modeled by 3-D simulation of a full nitride-based light-emitting diode (LED) structure with compositional material fluctuations closely match the experimental behavior of high quality blue LEDs. The model allows also a fine analysis of the quantum effects involved in carrier transport through such complex heterostructures. Finally, details of carrier population and recombination in the different quantum wells are given.