The Experts below are selected from a list of 2865 Experts worldwide ranked by ideXlab platform

Patrick Reynaert - One of the best experts on this subject based on the ideXlab platform.

  • E-band transformer-based Doherty Power Amplifier in 40 nm CMOS
    2014 IEEE Radio Frequency Integrated Circuits Symposium, 2014
    Co-Authors: Ercan Kaymaksut, Dixian Zhao, Patrick Reynaert
    Abstract:

    This paper presents an 80 GHz Doherty Power Amplifier in 40 nm CMOS technology. The Amplifier combines 4 push-pull Amplifiers by using 2×2 parallel-series combiner. In addition, it employs additional LC impedance matching to enhance the back-off efficiency. The transformer-based Doherty Amplifier demonstrates both high linearity and high back-off efficiency. Thus, it is tailored for high PAPR mm-wave applications such as E-band communication. The two stage Doherty Power Amplifier achieves 16.2 dBm output Power at 0.9 V supply with a PAE of 12%. Thanks to the linearization feature of the Doherty topology the 1 dB compression point of the Amplifier is as high as 15.2 dBm while the PAE at P 1dB is 11.1%.

  • cmos transformer based uneven Doherty Power Amplifier for wlan applications
    European Solid-State Circuits Conference, 2011
    Co-Authors: Ercan Kaymaksut, Patrick Reynaert
    Abstract:

    This paper reports a fully integrated Doherty Power Amplifier in standard 90 nm CMOS technology for 2.4 GHz WLAN applications. An asymmetrical series combining transformer is used as the Doherty combiner to enhance the efficiency at Power back-off. The two-stage uneven Doherty PA has 18 dB gain and produces 26.3 dBm saturated output Power, with a peak Power added efficiency (PAE) of 33% by using 2 V supply voltage. The PAE at 6 dB back-off is still as high as 25.1%. The PA is tested with 54 Mbps WLAN 802.11g signal and meets the stringent EVM and spectral mask requirements at 19.3 dBm average output Power with a PAE of 22.9% with no need of predistortion. Then, an open loop digital predistortion is applied to further improve the linearity. The PA satisfies WLAN requirements at 20.2 dBm average output Power with a PAE of 24.7% with predistortion.

  • a 2 4 ghz fully integrated Doherty Power Amplifier using series combining transformer
    European Solid-State Circuits Conference, 2010
    Co-Authors: Ercan Kaymaksut, Patrick Reynaert
    Abstract:

    A 2.4 GHz fully integrated Doherty Power Amplifier is fabricated in standard 90nm CMOS technology. The Power Amplifier employs a series combining transformer to eliminate bulky λ/4 transmission lines. An efficiency enhancement at Power back-off is measured. The two-stage Doherty PA has 16.6 dB small-signal gain and produces 20.5 dBm saturated output Power with a drain efficiency of 30.9% (PAE 26.7%) by using 2 V supply voltage. The PA is tested with 54 Mbps WLAN 802.11g signal and the PA meets the stringent EVM and spectral mask requirements at 12.9 dBm average output Power with a drain efficiency of 14.1% (PAE 11.5%).

Christian Fager - One of the best experts on this subject based on the ideXlab platform.

  • symmetrical Doherty Power Amplifier with extended efficiency range
    IEEE Transactions on Microwave Theory and Techniques, 2016
    Co-Authors: Mustafa Ozen, Kristoffer Andersson, Christian Fager
    Abstract:

    A symmetrical Doherty Power Amplifier (PA) with an extended efficiency range is proposed. This paper proves the existence of a class of symmetrical Doherty PAs having efficiency peaks for back-off levels larger than 6 dB. A design technique is developed that maintains the full voltage and current swings of both the main and auxiliary transistors. The concept is experimentally verified in a 1.95-GHz 25-W circuit demonstrator fabricated using identical GaN HEMT devices. An average Power-added efficiency of 50% and adjacent Power leakage ratio of $-{\hbox{49 dBc}}$ is obtained with 9-dB peak-to-average Power-ratio 20-MHz long-term evolution test signals.

  • symmetrical Doherty Power Amplifier with extended efficiency range
    IEEE Transactions on Microwave Theory and Techniques, 2016
    Co-Authors: Mustafa Ozen, Kristoffer Andersson, Christian Fager
    Abstract:

    A symmetrical Doherty Power Amplifier (PA) with an extended efficiency range is proposed. This paper proves the existence of a class of symmetrical Doherty PAs having efficiency peaks for back-off levels larger than 6 dB. A design technique is developed that maintains the full voltage and current swings of both the main and auxiliary transistors. The concept is experimentally verified in a 1.95-GHz 25-W circuit demonstrator fabricated using identical GaN HEMT devices. An average Power-added efficiency of 50% and adjacent Power leakage ratio of $-{\hbox{49 dBc}}$ is obtained with 9-dB peak-to-average Power-ratio 20-MHz long-term evolution test signals.

  • a modified Doherty Power Amplifier with extended bandwidth and reconfigurable efficiency
    IEEE Transactions on Microwave Theory and Techniques, 2013
    Co-Authors: David Gustafsson, Christer M Andersson, Christian Fager
    Abstract:

    This paper derives the theory and presents measurements of a new Power Amplifier based on the Doherty Power Amplifier topology. It is theoretically shown that the proposed Amplifier can simultaneously provide high efficiency at both full output Power and at output Power back-off, over a much improved bandwidth compared to the conventional Doherty Power Amplifier. It is also shown that the proposed Amplifier allows reconfiguration of the efficiency in Power back-off without the need of tunable elements.

Ercan Kaymaksut - One of the best experts on this subject based on the ideXlab platform.

  • E-band transformer-based Doherty Power Amplifier in 40 nm CMOS
    2014 IEEE Radio Frequency Integrated Circuits Symposium, 2014
    Co-Authors: Ercan Kaymaksut, Dixian Zhao, Patrick Reynaert
    Abstract:

    This paper presents an 80 GHz Doherty Power Amplifier in 40 nm CMOS technology. The Amplifier combines 4 push-pull Amplifiers by using 2×2 parallel-series combiner. In addition, it employs additional LC impedance matching to enhance the back-off efficiency. The transformer-based Doherty Amplifier demonstrates both high linearity and high back-off efficiency. Thus, it is tailored for high PAPR mm-wave applications such as E-band communication. The two stage Doherty Power Amplifier achieves 16.2 dBm output Power at 0.9 V supply with a PAE of 12%. Thanks to the linearization feature of the Doherty topology the 1 dB compression point of the Amplifier is as high as 15.2 dBm while the PAE at P 1dB is 11.1%.

  • cmos transformer based uneven Doherty Power Amplifier for wlan applications
    European Solid-State Circuits Conference, 2011
    Co-Authors: Ercan Kaymaksut, Patrick Reynaert
    Abstract:

    This paper reports a fully integrated Doherty Power Amplifier in standard 90 nm CMOS technology for 2.4 GHz WLAN applications. An asymmetrical series combining transformer is used as the Doherty combiner to enhance the efficiency at Power back-off. The two-stage uneven Doherty PA has 18 dB gain and produces 26.3 dBm saturated output Power, with a peak Power added efficiency (PAE) of 33% by using 2 V supply voltage. The PAE at 6 dB back-off is still as high as 25.1%. The PA is tested with 54 Mbps WLAN 802.11g signal and meets the stringent EVM and spectral mask requirements at 19.3 dBm average output Power with a PAE of 22.9% with no need of predistortion. Then, an open loop digital predistortion is applied to further improve the linearity. The PA satisfies WLAN requirements at 20.2 dBm average output Power with a PAE of 24.7% with predistortion.

  • a 2 4 ghz fully integrated Doherty Power Amplifier using series combining transformer
    European Solid-State Circuits Conference, 2010
    Co-Authors: Ercan Kaymaksut, Patrick Reynaert
    Abstract:

    A 2.4 GHz fully integrated Doherty Power Amplifier is fabricated in standard 90nm CMOS technology. The Power Amplifier employs a series combining transformer to eliminate bulky λ/4 transmission lines. An efficiency enhancement at Power back-off is measured. The two-stage Doherty PA has 16.6 dB small-signal gain and produces 20.5 dBm saturated output Power with a drain efficiency of 30.9% (PAE 26.7%) by using 2 V supply voltage. The PA is tested with 54 Mbps WLAN 802.11g signal and the PA meets the stringent EVM and spectral mask requirements at 12.9 dBm average output Power with a drain efficiency of 14.1% (PAE 11.5%).

David Gustafsson - One of the best experts on this subject based on the ideXlab platform.

  • a modified Doherty Power Amplifier with extended bandwidth and reconfigurable efficiency
    IEEE Transactions on Microwave Theory and Techniques, 2013
    Co-Authors: David Gustafsson, Christer M Andersson, Christian Fager
    Abstract:

    This paper derives the theory and presents measurements of a new Power Amplifier based on the Doherty Power Amplifier topology. It is theoretically shown that the proposed Amplifier can simultaneously provide high efficiency at both full output Power and at output Power back-off, over a much improved bandwidth compared to the conventional Doherty Power Amplifier. It is also shown that the proposed Amplifier allows reconfiguration of the efficiency in Power back-off without the need of tunable elements.

Yuanan Liu - One of the best experts on this subject based on the ideXlab platform.

  • A broadband Doherty Power Amplifier with modified post-matching structure
    2017 IEEE 5th International Symposium on Electromagnetic Compatibility (EMC-Beijing), 2017
    Co-Authors: Shuo Wang, Yuanan Liu
    Abstract:

    In this paper, a novel broadband Doherty Power Amplifier (DPA) with an 800 MHz (42% fractional) bandwidth is presented. The modified post-matching structure and stepped transmission-line impedance transformation network are employed in the proposed design. As presented in this paper, an additional triple transmission line integrated in the output matching network of the peaking Amplifier is regarded as output combiner and offset line. A novel Doherty Power Amplifier was designed by a packaged GaN HEMT to achieve the broadband characteristics. The measured results show that, the realized DPA exhibits 50%–60% drain efficiency (DE) at 6.5–7.5 dB Power back-off and the maximum output Power ranges from 43.5 to 45 dBm over the frequency band of 1.5–2.3 GHz.

  • Modified Doherty Power Amplifier based on asymmetrical load matching networks
    2016 11th International Symposium on Antennas Propagation and EM Theory (ISAPE), 2016
    Co-Authors: Yanfang Cai, Yuanan Liu
    Abstract:

    A novel deep back-off Doherty Power Amplifier based on asymmetrical load matching networks is proposed in this paper. The asymmetric Doherty Power Amplifier (ADPA) modulates carrier Power Amplifier (PA)'s load impedance in peak output Power region. With the optimized matching method and modulation mode, the ADPA achieves optimum efficiency across the whole output back-off (OBO) Power region. Due to the novel asymmetric load matching networks, the structure of output Power combiner also gets simplified. The enhanced performance is implemented by the ADPA built with CREE's GaN HEMT CGH40010 and CGH40025 devices at 2.6GHz. Measurement results show the proposed ADPA can achieve 55.3% Power added efficiency (PAE) at 9.2dB back-off Power level and a favorable ACPR of-53.7dBc.