The Experts below are selected from a list of 321 Experts worldwide ranked by ideXlab platform

Dabin Lin - One of the best experts on this subject based on the ideXlab platform.

  • Domain Size engineering in 0 5 mno2 k0 5na0 5 nbo3 lead free piezoelectric crystals
    Journal of Applied Physics, 2015
    Co-Authors: Dabin Lin, Shujun Zhang, Changlong Cai, Weiguo Liu
    Abstract:

    The piezoelectric property of [001]-oriented 0.5%MnO2-(K0.5Na0.5)NbO3 (Mn-KNN) crystals was studied as a function of Domain Size, being poled with different electric fields at 205 °C (above orthorhombic to tetragonal phase transition temperature To-t). The piezoelectric coefficients d33 and relative dielectric constants er were found to increase from 270 pC/N to 350 pC/N and 730 to 850 with the Domain Size decreasing from 9 to 2 μm, respectively. The thermal stability of piezoelectric property was investigated, where the d33 value for [001]-oriented Mn-KNN crystals with Domain Size of 2 μm was found to decrease to 330 pC/N at depoling temperature of 150 °C, with minimal variation of ∼6%. The results reveal that Domain Size engineering is an effective way to improve the piezoelectric properties of Mn-KNN crystals.

  • Domain Size engineering in tetragonal pb in1 2nb1 2 o3 pb mg1 3nb2 3 o3 pbtio3 crystals
    Journal of Applied Physics, 2011
    Co-Authors: Shujun Zhang, Jun Luo, Dabin Lin, Zhenrong Li, Fei Li, Zhuo Xu, Satoshi Wada, Thomas R. Shrout
    Abstract:

    The effect of Domain Size on the dielectric and piezoelectric properties of [111]-oriented tetragonal Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals was investigated. The dielectric permittivity (ɛ33 T/ɛ0) and piezoelectric coefficient (d33) were found to be on the order of 13 800 and 1630 pC/N, respectively, for samples with Domain Size of ∼500 nm, a 3-fold increase to crystals with Domain Size of ∼50 μm. Rayleigh analysis revealed that the extrinsic contribution to the piezoelectric response increased from ∼8% to 30% with decreasing Domain Size, due to the increased Domain wall density and associated irreversible Domain wall motion. The enhanced properties were thought to relate to the fine Domain structures, however, showing a poor electric field and temperature stabilities with Domain Size of 500 nm. Of particular significance is that samples with Domain Size being on the order of 5 μm exhibit field and temperature stabilities, with yet high piezoelectric properties, make it potential for transduce...

  • Domain Size engineering in tetragonal Pb(In1∕2Nb1∕2)O3-Pb(Mg1∕3Nb2∕3)O3-PbTiO3 crystals
    Journal of applied physics, 2011
    Co-Authors: Dabin Lin, Shujun Zhang, Jun Luo, Satoshi Wada, Thomas R. Shrout
    Abstract:

    The effect of Domain Size on the dielectric and piezoelectric properties of [111]-oriented tetragonal Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals was investigated. The dielectric permittivity (ɛ33 T/ɛ0) and piezoelectric coefficient (d33) were found to be on the order of 13 800 and 1630 pC/N, respectively, for samples with Domain Size of ∼500 nm, a 3-fold increase to crystals with Domain Size of ∼50 μm. Rayleigh analysis revealed that the extrinsic contribution to the piezoelectric response increased from ∼8% to 30% with decreasing Domain Size, due to the increased Domain wall density and associated irreversible Domain wall motion. The enhanced properties were thought to relate to the fine Domain structures, however, showing a poor electric field and temperature stabilities with Domain Size of 500 nm. Of particular significance is that samples with Domain Size being on the order of 5 μm exhibit field and temperature stabilities, with yet high piezoelectric properties, make it potential for transduce...

  • influence of Domain Size on the scaling effects in pb mg1 3nb2 3 o3 pbtio3 ferroelectric crystals
    Scripta Materialia, 2011
    Co-Authors: Shujun Zhang, Dabin Lin, Hyeong Jae Lee, Thomas R. Shrout
    Abstract:

    The property degradation observed in thin Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT) crystals is believed to relate to large Domains and subsequent clamping induced by the surface boundary. In this work, the properties were investigated as function of Domain Size, using controlled poling. The degraded piezoelectric and dielectric properties of thin PMN–PT were found to increase significantly with decreasing Domain Size. Furthermore, the fine Domain structure was found to be stable at 3 kV cm−1 after 7.0 × 105 negative-pulse cycles. These properties make PMN–PT crystals suitable for high-frequency (>20 MHz) ultrasound transducers.

Thomas R. Shrout - One of the best experts on this subject based on the ideXlab platform.

  • Domain Size engineering in tetragonal pb in1 2nb1 2 o3 pb mg1 3nb2 3 o3 pbtio3 crystals
    Journal of Applied Physics, 2011
    Co-Authors: Shujun Zhang, Jun Luo, Dabin Lin, Zhenrong Li, Fei Li, Zhuo Xu, Satoshi Wada, Thomas R. Shrout
    Abstract:

    The effect of Domain Size on the dielectric and piezoelectric properties of [111]-oriented tetragonal Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals was investigated. The dielectric permittivity (ɛ33 T/ɛ0) and piezoelectric coefficient (d33) were found to be on the order of 13 800 and 1630 pC/N, respectively, for samples with Domain Size of ∼500 nm, a 3-fold increase to crystals with Domain Size of ∼50 μm. Rayleigh analysis revealed that the extrinsic contribution to the piezoelectric response increased from ∼8% to 30% with decreasing Domain Size, due to the increased Domain wall density and associated irreversible Domain wall motion. The enhanced properties were thought to relate to the fine Domain structures, however, showing a poor electric field and temperature stabilities with Domain Size of 500 nm. Of particular significance is that samples with Domain Size being on the order of 5 μm exhibit field and temperature stabilities, with yet high piezoelectric properties, make it potential for transduce...

  • Domain Size engineering in tetragonal Pb(In1∕2Nb1∕2)O3-Pb(Mg1∕3Nb2∕3)O3-PbTiO3 crystals
    Journal of applied physics, 2011
    Co-Authors: Dabin Lin, Shujun Zhang, Jun Luo, Satoshi Wada, Thomas R. Shrout
    Abstract:

    The effect of Domain Size on the dielectric and piezoelectric properties of [111]-oriented tetragonal Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals was investigated. The dielectric permittivity (ɛ33 T/ɛ0) and piezoelectric coefficient (d33) were found to be on the order of 13 800 and 1630 pC/N, respectively, for samples with Domain Size of ∼500 nm, a 3-fold increase to crystals with Domain Size of ∼50 μm. Rayleigh analysis revealed that the extrinsic contribution to the piezoelectric response increased from ∼8% to 30% with decreasing Domain Size, due to the increased Domain wall density and associated irreversible Domain wall motion. The enhanced properties were thought to relate to the fine Domain structures, however, showing a poor electric field and temperature stabilities with Domain Size of 500 nm. Of particular significance is that samples with Domain Size being on the order of 5 μm exhibit field and temperature stabilities, with yet high piezoelectric properties, make it potential for transduce...

  • influence of Domain Size on the scaling effects in pb mg1 3nb2 3 o3 pbtio3 ferroelectric crystals
    Scripta Materialia, 2011
    Co-Authors: Shujun Zhang, Dabin Lin, Hyeong Jae Lee, Thomas R. Shrout
    Abstract:

    The property degradation observed in thin Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT) crystals is believed to relate to large Domains and subsequent clamping induced by the surface boundary. In this work, the properties were investigated as function of Domain Size, using controlled poling. The degraded piezoelectric and dielectric properties of thin PMN–PT were found to increase significantly with decreasing Domain Size. Furthermore, the fine Domain structure was found to be stable at 3 kV cm−1 after 7.0 × 105 negative-pulse cycles. These properties make PMN–PT crystals suitable for high-frequency (>20 MHz) ultrasound transducers.

Luigi Colombo - One of the best experts on this subject based on the ideXlab platform.

  • graphene films with large Domain Size by a two step chemical vapor deposition process
    Nano Letters, 2010
    Co-Authors: Xuesong Li, Mark Borysiak, Jinho An, Archana Venugopal, Carl W. Magnuson, Aruna Velamakanni, Lianfeng Fu, Eric M Vogel, Edgar Voelkl, Luigi Colombo
    Abstract:

    The fundamental properties of graphene are making it an attractive material for a wide variety of applications. Various techniques have been developed to produce graphene and recently we discovered the synthesis of large area graphene by chemical vapor deposition (CVD) of methane on Cu foils. We also showed that graphene growth on Cu is a surface-mediated process and the films were polycrystalline with Domains having an area of tens of square micrometers. In this paper, we report on the effect of growth parameters such as temperature, and methane flow rate and partial pressure on the growth rate, Domain Size, and surface coverage of graphene as determined by Raman spectroscopy, and transmission and scanning electron microscopy. On the basis of the results, we developed a two-step CVD process to syntheSize graphene films with Domains having an area of hundreds of square micrometers. Scanning electron microscopy and Raman spectroscopy clearly show an increase in Domain Size by changing the growth parameters...

Shujun Zhang - One of the best experts on this subject based on the ideXlab platform.

  • Domain Size engineering in 0 5 mno2 k0 5na0 5 nbo3 lead free piezoelectric crystals
    Journal of Applied Physics, 2015
    Co-Authors: Dabin Lin, Shujun Zhang, Changlong Cai, Weiguo Liu
    Abstract:

    The piezoelectric property of [001]-oriented 0.5%MnO2-(K0.5Na0.5)NbO3 (Mn-KNN) crystals was studied as a function of Domain Size, being poled with different electric fields at 205 °C (above orthorhombic to tetragonal phase transition temperature To-t). The piezoelectric coefficients d33 and relative dielectric constants er were found to increase from 270 pC/N to 350 pC/N and 730 to 850 with the Domain Size decreasing from 9 to 2 μm, respectively. The thermal stability of piezoelectric property was investigated, where the d33 value for [001]-oriented Mn-KNN crystals with Domain Size of 2 μm was found to decrease to 330 pC/N at depoling temperature of 150 °C, with minimal variation of ∼6%. The results reveal that Domain Size engineering is an effective way to improve the piezoelectric properties of Mn-KNN crystals.

  • Domain Size engineering in tetragonal pb in1 2nb1 2 o3 pb mg1 3nb2 3 o3 pbtio3 crystals
    Journal of Applied Physics, 2011
    Co-Authors: Shujun Zhang, Jun Luo, Dabin Lin, Zhenrong Li, Fei Li, Zhuo Xu, Satoshi Wada, Thomas R. Shrout
    Abstract:

    The effect of Domain Size on the dielectric and piezoelectric properties of [111]-oriented tetragonal Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals was investigated. The dielectric permittivity (ɛ33 T/ɛ0) and piezoelectric coefficient (d33) were found to be on the order of 13 800 and 1630 pC/N, respectively, for samples with Domain Size of ∼500 nm, a 3-fold increase to crystals with Domain Size of ∼50 μm. Rayleigh analysis revealed that the extrinsic contribution to the piezoelectric response increased from ∼8% to 30% with decreasing Domain Size, due to the increased Domain wall density and associated irreversible Domain wall motion. The enhanced properties were thought to relate to the fine Domain structures, however, showing a poor electric field and temperature stabilities with Domain Size of 500 nm. Of particular significance is that samples with Domain Size being on the order of 5 μm exhibit field and temperature stabilities, with yet high piezoelectric properties, make it potential for transduce...

  • Domain Size engineering in tetragonal Pb(In1∕2Nb1∕2)O3-Pb(Mg1∕3Nb2∕3)O3-PbTiO3 crystals
    Journal of applied physics, 2011
    Co-Authors: Dabin Lin, Shujun Zhang, Jun Luo, Satoshi Wada, Thomas R. Shrout
    Abstract:

    The effect of Domain Size on the dielectric and piezoelectric properties of [111]-oriented tetragonal Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals was investigated. The dielectric permittivity (ɛ33 T/ɛ0) and piezoelectric coefficient (d33) were found to be on the order of 13 800 and 1630 pC/N, respectively, for samples with Domain Size of ∼500 nm, a 3-fold increase to crystals with Domain Size of ∼50 μm. Rayleigh analysis revealed that the extrinsic contribution to the piezoelectric response increased from ∼8% to 30% with decreasing Domain Size, due to the increased Domain wall density and associated irreversible Domain wall motion. The enhanced properties were thought to relate to the fine Domain structures, however, showing a poor electric field and temperature stabilities with Domain Size of 500 nm. Of particular significance is that samples with Domain Size being on the order of 5 μm exhibit field and temperature stabilities, with yet high piezoelectric properties, make it potential for transduce...

  • influence of Domain Size on the scaling effects in pb mg1 3nb2 3 o3 pbtio3 ferroelectric crystals
    Scripta Materialia, 2011
    Co-Authors: Shujun Zhang, Dabin Lin, Hyeong Jae Lee, Thomas R. Shrout
    Abstract:

    The property degradation observed in thin Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT) crystals is believed to relate to large Domains and subsequent clamping induced by the surface boundary. In this work, the properties were investigated as function of Domain Size, using controlled poling. The degraded piezoelectric and dielectric properties of thin PMN–PT were found to increase significantly with decreasing Domain Size. Furthermore, the fine Domain structure was found to be stable at 3 kV cm−1 after 7.0 × 105 negative-pulse cycles. These properties make PMN–PT crystals suitable for high-frequency (>20 MHz) ultrasound transducers.

Edgar Voelkl - One of the best experts on this subject based on the ideXlab platform.

  • graphene films with large Domain Size by a two step chemical vapor deposition process
    arXiv: Materials Science, 2010
    Co-Authors: Carl W. Magnuson, Mark Borysiak, Archana Venugopal, Aruna Velamakanni, Eric M Vogel, Ji Won Suk, Boyang Han, Weiwei Cai, Yanwu Zhu, Edgar Voelkl
    Abstract:

    The fundamental properties of graphene are making it an attractive material for a wide variety of applications. Various techniques have been developed to produce graphene and recently we discovered the synthesis of large area graphene by chemical vapor deposition (CVD) of methane on Cu foils. We also showed that graphene growth on Cu is a surface-mediated process and the films were polycrystalline with Domains having an area of tens of square microns. In this paper we report on the effect of growth parameters such as temperature, and methane flow rate and partial pressure on the growth rate, Domain Size, and surface coverage of graphene as determined by Raman spectroscopy, and transmission and scanning electron microscopy. Based on the results, we developed a two-step CVD process to syntheSize graphene films with Domains having an area of hundreds of square microns. Scanning electron microscopy and Raman spectroscopy clearly show an increase in Domain Size by changing the growth parameters. Transmission electron microscopy further shows that the Domains are crystallographically rotated with respect to each other with a range of angles from about 13 degrees to nearly 30 degrees. Electrical transport measurements performed on back-gated FETs show that overall films with larger Domains tend to have higher carrier mobility, up to about 16,000 cm2 V-1 s-1 at room temperature.

  • graphene films with large Domain Size by a two step chemical vapor deposition process
    Nano Letters, 2010
    Co-Authors: Xuesong Li, Mark Borysiak, Jinho An, Archana Venugopal, Carl W. Magnuson, Aruna Velamakanni, Lianfeng Fu, Eric M Vogel, Edgar Voelkl, Luigi Colombo
    Abstract:

    The fundamental properties of graphene are making it an attractive material for a wide variety of applications. Various techniques have been developed to produce graphene and recently we discovered the synthesis of large area graphene by chemical vapor deposition (CVD) of methane on Cu foils. We also showed that graphene growth on Cu is a surface-mediated process and the films were polycrystalline with Domains having an area of tens of square micrometers. In this paper, we report on the effect of growth parameters such as temperature, and methane flow rate and partial pressure on the growth rate, Domain Size, and surface coverage of graphene as determined by Raman spectroscopy, and transmission and scanning electron microscopy. On the basis of the results, we developed a two-step CVD process to syntheSize graphene films with Domains having an area of hundreds of square micrometers. Scanning electron microscopy and Raman spectroscopy clearly show an increase in Domain Size by changing the growth parameters...