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Stephen K Oleary - One of the best experts on this subject based on the ideXlab platform.
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how changes in the crystal temperature and the Doping Concentration impact upon bulk wurtzite zinc oxide s electron transport response
MRS Advances, 2019Co-Authors: Poppy Siddiqua, Walid A Hadi, M S Shur, Stephen K OlearyAbstract:The role that changes in the crystal temperature and the Doping Concentration play in shaping the character of the steady-state and transient transport response of electrons within bulk wurtzite zinc oxide will be examined. Monte Carlo electron transport simulations are drawn upon for the purposes of this analysis. We find that both the crystal temperature and the Doping Concentration greatly influence the character of the steady-state and transient electron transport response. In particular, for the case of steady-state electron transport, the peak drift velocity decreases by 30% as the crystal temperature is increased from 100 to 700 K, this decrease in velocity being only 20% as the Doping Concentration is increased from 1015 to 1019 cm-3. The impact on the transient electron drift velocity is not as acute.
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the sensitivity of the electron transport within bulk zinc blende gallium nitride to variations in the crystal temperature the Doping Concentration and the non parabolicity coefficient associated with the lowest energy conduction band valley
Journal of Applied Physics, 2016Co-Authors: Poppy Siddiqua, Stephen K OlearyAbstract:Within the framework of a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk zinc-blende gallium nitride. In particular, we examine how the steady-state and transient electron transport that occurs within this material changes in response to variations in the crystal temperature, the Doping Concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley. These results are then contrasted with those corresponding to a number of other compound semiconductors of interest.
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the steady state and transient electron transport within bulk zinc blende indium nitride the impact of crystal temperature and Doping Concentration variations
Journal of Applied Physics, 2016Co-Authors: Poppy Siddiqua, Stephen K OlearyAbstract:Within the framework of a semi-classical three-valley Monte Carlo electron transport simulation approach, we analyze the steady-state and transient aspects of the electron transport within bulk zinc-blende indium nitride, with a focus on the response to variations in the crystal temperature and the Doping Concentration. We find that while the electron transport associated with zinc-blende InN is highly sensitive to the crystal temperature, it is not very sensitive to the Doping Concentration selection. The device consequences of these results are then explored.
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the sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature the Doping Concentration and the non parabolicity coefficient an updated monte carlo analysis
Journal of Materials Science: Materials in Electronics, 2010Co-Authors: M S Shur, Stephen K Oleary, B E Foutz, L F EastmanAbstract:Using a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk wurtzite InN using a revised set of material parameters, this revised set of parameters taking into account recently observed InN phenomenology. In particular, we examine how the steady-state and transient electron transport that occurs within bulk wurtzite InN changes in response to variations in the crystal temperature and the Doping Concentration. The sensitivity of these results to variations in the non-parabolicity coefficient is also examined.
Kazuhide Kumakura - One of the best experts on this subject based on the ideXlab platform.
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minority carrier diffusion length in gan dislocation density and Doping Concentration dependence
Applied Physics Letters, 2005Co-Authors: Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi, Tamotsu Hashizume, Takashi Fukui, Hideki HasegawaAbstract:We investigated the minority carrier diffusion length in p- and n-GaN by performing electron-beam-induced current measurements of GaN p–n junction diodes. Minority electron diffusion length in p-GaN strongly depended on the Mg Doping Concentration for relatively low dislocation density below 108cm−2. It increased from 220to950nm with decreasing Mg Doping Concentration from 3×1019to4×1018cm−3. For relatively high dislocation density above 109cm−2, it was less than 300nm and independent of the Mg Doping Concentration. On the other hand, the minority hole diffusion length in n-GaN was shorter than 250nm and less affected by the dislocation density and Si Doping Concentration. We discuss the Doping-Concentration and dislocation-density dependence of minority carrier diffusion length.
T Honma - One of the best experts on this subject based on the ideXlab platform.
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universal optimal hole Doping Concentration in single layer high temperature cuprate superconductors
Superconductor Science and Technology, 2006Co-Authors: T Honma, P H HorAbstract:We argue that in cuprate physics there are two types, hole content per CuO2 plane (Ppl) and the corresponding hole content per unit volume (P3D), of hole- Doping Concentrations for addressing physical properties that are two-dimensional (2D) and three-dimensional (3D) in nature, respectively. We find that superconducting transition temperature (Tc) varies systematically with P3D as a superconducting "dome" with a universal optimal hole-Doping Concentration P opt. 3D = 1.6 × 10 21 cm 3 for single-layer high temperature superconductors. We suggest that P opt. 3D determines the upper bound of the electronic energy of underdoped single-layer high-Tc cuprates.
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universal optimal hole Doping Concentration in single layer high temperature cuprate superconductors
arXiv: Superconductivity, 2006Co-Authors: T Honma, P H HorAbstract:We argue that in cuprate physics there are two types, hole content per CuO$_2$ plane ($P_{pl}$) and the corresponding hole content per unit volume ($P_{3D}$), of hole-Doping Concentrations for addressing physical properties that are two-dimensional (2D) and three-dimensional (3D) in nature, respectively. We find that superconducting transition temperature ($T_c$) varies systematically with $P_{3D}$ as a superconducting \textquotedblleft $dome$\textquotedblright with a universal optimal hole-Doping Concentration $P_{3D}^{opt.}$ = 1.6 $\times$ 10$^{21}$ cm$^{-3}$ for single-layer high temperature superconductors. We suggest that $P_{3D}^{opt.}$ determines the upper bound of the electronic energy of underdoped single-layer high-$T_c$ cuprates.
Poppy Siddiqua - One of the best experts on this subject based on the ideXlab platform.
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how changes in the crystal temperature and the Doping Concentration impact upon bulk wurtzite zinc oxide s electron transport response
MRS Advances, 2019Co-Authors: Poppy Siddiqua, Walid A Hadi, M S Shur, Stephen K OlearyAbstract:The role that changes in the crystal temperature and the Doping Concentration play in shaping the character of the steady-state and transient transport response of electrons within bulk wurtzite zinc oxide will be examined. Monte Carlo electron transport simulations are drawn upon for the purposes of this analysis. We find that both the crystal temperature and the Doping Concentration greatly influence the character of the steady-state and transient electron transport response. In particular, for the case of steady-state electron transport, the peak drift velocity decreases by 30% as the crystal temperature is increased from 100 to 700 K, this decrease in velocity being only 20% as the Doping Concentration is increased from 1015 to 1019 cm-3. The impact on the transient electron drift velocity is not as acute.
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the sensitivity of the electron transport within bulk zinc blende gallium nitride to variations in the crystal temperature the Doping Concentration and the non parabolicity coefficient associated with the lowest energy conduction band valley
Journal of Applied Physics, 2016Co-Authors: Poppy Siddiqua, Stephen K OlearyAbstract:Within the framework of a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk zinc-blende gallium nitride. In particular, we examine how the steady-state and transient electron transport that occurs within this material changes in response to variations in the crystal temperature, the Doping Concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley. These results are then contrasted with those corresponding to a number of other compound semiconductors of interest.
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the steady state and transient electron transport within bulk zinc blende indium nitride the impact of crystal temperature and Doping Concentration variations
Journal of Applied Physics, 2016Co-Authors: Poppy Siddiqua, Stephen K OlearyAbstract:Within the framework of a semi-classical three-valley Monte Carlo electron transport simulation approach, we analyze the steady-state and transient aspects of the electron transport within bulk zinc-blende indium nitride, with a focus on the response to variations in the crystal temperature and the Doping Concentration. We find that while the electron transport associated with zinc-blende InN is highly sensitive to the crystal temperature, it is not very sensitive to the Doping Concentration selection. The device consequences of these results are then explored.
D Abukay - One of the best experts on this subject based on the ideXlab platform.
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investigation of the variation in weak link profile of yba2cu3 xagxo7 δ superconductors by ag Doping Concentration
Solid State Communications, 2004Co-Authors: Mustafa Tepe, I Avci, H Kocoglu, D AbukayAbstract:Abstract The effect of Ag Doping Concentration on the microstructure, transport properties and weak-link profile of YBa 2 Cu 3− x Ag x O 7− δ bulk superconducting compound was investigated through resistance–temperature ( R – T ), ac magnetic susceptibility ( χ − T ), scanning electron microscope (SEM), X-ray diffraction (XRD) and the critical current density ( J c ) versus applied magnetic field ( J c − B ) measurements. We used the additive method with cationic ratio of x =0.1−0.4 for the YBCO-Ag system. The change in the silver Doping Concentration slightly affected the transition temperatures ( T c,zero ), whereas, the critical current densities ( J c ) of the samples and their magnetic field ( B ) dependencies were noticeably affected. The improvement on the microstructural properties of YBCO bulk superconductors was observed in SEM analysis, the J c values increased and their magnetic field dependencies decreased with the increasing of Ag Concentration up to x =0.2. As well as the current transport properties. Ag Doping up to a certain amount produces texturing that gives rise to a modification in the weak-link profile resulting in an enhanced strength of flux pinning which causes an increase in the current carrying capacity.
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investigation of the variation in weak link profile of yba2cu3 xagxo7 δ superconductors by ag Doping Concentration
Solid State Communications, 2004Co-Authors: Mustafa Tepe, I Avci, H Kocoglu, D AbukayAbstract:Abstract The effect of Ag Doping Concentration on the microstructure, transport properties and weak-link profile of YBa 2 Cu 3− x Ag x O 7− δ bulk superconducting compound was investigated through resistance–temperature ( R – T ), ac magnetic susceptibility ( χ − T ), scanning electron microscope (SEM), X-ray diffraction (XRD) and the critical current density ( J c ) versus applied magnetic field ( J c − B ) measurements. We used the additive method with cationic ratio of x =0.1−0.4 for the YBCO-Ag system. The change in the silver Doping Concentration slightly affected the transition temperatures ( T c,zero ), whereas, the critical current densities ( J c ) of the samples and their magnetic field ( B ) dependencies were noticeably affected. The improvement on the microstructural properties of YBCO bulk superconductors was observed in SEM analysis, the J c values increased and their magnetic field dependencies decreased with the increasing of Ag Concentration up to x =0.2. As well as the current transport properties. Ag Doping up to a certain amount produces texturing that gives rise to a modification in the weak-link profile resulting in an enhanced strength of flux pinning which causes an increase in the current carrying capacity.