Junction Diodes

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Tohru Nakamura - One of the best experts on this subject based on the ideXlab platform.

  • 5 0 kv breakdown voltage vertical gan p n Junction Diodes
    Japanese Journal of Applied Physics, 2018
    Co-Authors: Hiroshi Ohta, Tohru Nakamura, Fumimasa Horikiri, Kentaro Hayashi, Michitaka Yoshino, Tomoyoshi Mishima
    Abstract:

    A high breakdown voltage of 5.0 kV has been achieved for the first time in vertical GaN p–n Junction Diodes by using our newly developed guard-ring structures. A resistance device was inserted between the main diode portion and the guard-ring portion in a ring-shaped p–n diode to generate a voltage drop over the resistance device by leakage current flowing through the guard-ring portion under negatively biased conditions before breakdown. The voltage at the outer mesa edge of the guard-ring portion, where the electric field intensity is highest and the destructive breakdown usually occurs, is decreased by the voltage drop, so the electric field concentration in the portion is reduced. By adopting this structure, the breakdown voltage (V B) is raised by about 200 V. Combined with a low measured on-resistance (R on) of 1.25 mΩ cm2, Baliga's figure of merit was as high as 20 GW/cm2.

  • vertical gan p n Junction Diodes with high breakdown voltages over 4 kv
    IEEE Electron Device Letters, 2015
    Co-Authors: Hiroshi Ohta, Naoki Kaneda, Tomoyoshi Mishima, Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Tohru Nakamura
    Abstract:

    Vertical structured GaN power devices have recently been attracting a great interest because of their potential on extremely high-power conversion efficiency. This letter describes increased breakdown voltages in the vertical GaN p-n Diodes fabricated on the free-standing GaN substrates. By applying multiple lightly Si doped n-GaN drift layers to the p-n diode, the record breakdown voltages ( $V_{B}$ ) of 4.7 kV combined with low specific differential ON-resistance ( $R_{\mathrm{\scriptscriptstyle ON}}$ ) of 1.7 $\text{m}\Omega $ cm2 were achieved. With reducing the Si-doping concentration of the top n-GaN drift layer adjacent to the p-n Junction using well-controlled metal-organic vapor phase epitaxy systems, the peak electric field at the p-n Junction could be suppressed under high negatively biased conditions. The second drift layer with a moderate doping concentration contributed to the low $R_{\mathrm{\scriptscriptstyle ON}}$ . A Baliga’s figure of merit ( $V_{B}^{2}/R_{\mathrm{\scriptscriptstyle ON}}$ ) was 13 GW/cm2. These are the best values ever reported among those achieved by GaN p-n Junction Diodes on the free-standing GaN substrates.

  • Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV
    IEEE Electron Device Letters, 2015
    Co-Authors: Hiroshi Ohta, Naoki Kaneda, Tomoyoshi Mishima, Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Tohru Nakamura
    Abstract:

    Vertical structured GaN power devices have recently been attracting a great interest because of their potential on extremely high-power conversion efficiency. This letter describes increased breakdown voltages in the vertical GaN p-n Diodes fabricated on the free-standing GaN substrates. By applying multiple lightly Si doped n-GaN drift layers to the p-n diode, the record breakdown voltages (VB) of 4.7 kV combined with low specific differential ON-resistance (RON) of 1.7 mΩcm2 were achieved. With reducing the Si-doping concentration of the top n-GaN drift layer adjacent to the p-n Junction using well-controlled metal-organic vapor phase epitaxy systems, the peak electric field at the p-n Junction could be suppressed under high negatively biased conditions. The second drift layer with a moderate doping concentration contributed to the low RON. A Baliga's figure of merit (VB2/RON) was 13 GW/cm2. These are the best values ever reported among those achieved by GaN p-n Junction Diodes on the free-standing GaN substrates.

  • high breakdown voltage and low specific on resistance gan p n Junction Diodes on free standing gan substrates fabricated through low damage field plate process
    Japanese Journal of Applied Physics, 2013
    Co-Authors: Yoshitomo Hatakeyama, Kazuki Nomoto, Naoki Kaneda, Tomoyoshi Mishima, Akihisa Terano, Tadayoshi Tsuchiya, Tohru Nakamura
    Abstract:

    In this letter, we describe the characteristics of Gallium Nitride (GaN) p–n Junction Diodes fabricated on free-standing GaN substrates with low specific on-resistance Ron and high breakdown voltage VB. The breakdown voltage of the Diodes with the field-plate (FP) structure was over 3 kV, and the leakage current was low, i.e., in the range of 10-4 A/cm2. The specific on-resistance of the Diodes of 60 µm diameter with the FP structure was 0.9 mΩcm2. Baliga's figure of merit (VB2/Ron) of 10 GW/cm2 is obtained. Although a certain number of dislocations were included in the device, these excellent results indicated a definite availability of this material system for power-device applications.

  • over 3 0 hbox gw cm 2 figure of merit gan p n Junction Diodes on free standing gan substrates
    IEEE Electron Device Letters, 2011
    Co-Authors: Yoshitomo Hatakeyama, Kazuki Nomoto, Naoki Kaneda, Tomoyoshi Mishima, Toshihiro Kawano, Tohru Nakamura
    Abstract:

    This letter describes a new two-step electrode process on p-GaN and characteristics of GaN p-n Junction Diodes on free-standing GaN substrates with low specific ON-resistance Rοn and high breakdown voltage VB. We develop a two-step process for anode electrodes in order to avoid plasma damage to the p+-GaN contact layer during the sputtering process. The specific ON-resistance is further improved due to a new low-damage process. The breakdown voltage of the Diodes with the field-plate (FP) structure is over 1100 V, and the leakage current was low, i.e., in the range of 10-9 A. The specific ON-resistance of the Diodes of 50 μm in diameter with the FP structure was 0.4 mΩ · cm2. Baliga's figure of merit (VB2/Ron) of 3.0 GW/cm2 is obtained. These are the best values ever reported among those achieved by GaN p-n Junction Diodes on free-standing GaN substrates.

Tomoyoshi Mishima - One of the best experts on this subject based on the ideXlab platform.

  • Impact of Lowering Threading Dislocation Density on Performances of Vertical GaN p-n Junction Diodes
    2019 Compound Semiconductor Week (CSW), 2019
    Co-Authors: Hiroshi Ohta, Naomi Asai, Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Tomoyoshi Mishima
    Abstract:

    GaN p-n Junction Diodes were fabricated on freestanding GaN substrates prepared by epitaxial lateral overgrowth (ELO) method on hydride-vapor phase (HVPE) grown GaN substrates with stripe-patterned. The ELO substrate had low threading dislocation density (TDD) area and high TDD area which were alternately located with a period of 200 μm. The Diodes located on the low TDD area showed higher breakdown voltages and lower on-resistances with small deviations compared with those located on high TDD area. This research provides guidelines of TDD for fabrication of high performance vertical structure GaN power devices.

  • 4 9 kv breakdown voltage vertical gan p n Junction Diodes with high avalanche capability
    Japanese Journal of Applied Physics, 2019
    Co-Authors: Hiroshi Ohta, Naomi Asai, Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Tomoyoshi Mishima
    Abstract:

    In order to avoid sudden catastrophic hard breakdown in high breakdown voltage vertical GaN p–n Junction Diodes, punch-through induced breakdown structures have been newly considered. Mg acceptor concentration in the p-GaN layer was reduced so that the punch-through breakdown occurred before the hard breakdown. By using a wafer with triple drift layers and the p-GaN layer with lowered Mg concentration of 3 × 1017 cm−3 grown on a freestanding n-GaN substrate, the diode showed a high breakdown voltage of 4.9 kV with high reverse avalanche capabilities against sudden increase of reverse current over 5 orders of magnitudes. No degradation was observed after fifteen repetitive measurements.

  • Stable Fabrication of High Breakdown Voltage Mesa-Structure Vertical GaN p-n Junction Diodes Using Electrochemical Etching
    2018 IEEE International Meeting for Future of Electron Devices Kansai (IMFEDK), 2018
    Co-Authors: Hiroshi Ohta, Tomoyoshi Mishima, Naomi Asai, Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida
    Abstract:

    A wet etching has been performed using an electrochemical etching method to fabricate mesa-structure vertical GaN p-n Junction Diodes. In case of conventional dry etching, the breakdown voltages of the p-n Diodes showed scattered values probably due to local concentration of electric field by roughness at the side wall of the mesa. Smooth and damage-free surface have been obtained by the wet etching, which has enabled higher and stable the breakdown voltages.

  • 5 0 kv breakdown voltage vertical gan p n Junction Diodes
    Japanese Journal of Applied Physics, 2018
    Co-Authors: Hiroshi Ohta, Tohru Nakamura, Fumimasa Horikiri, Kentaro Hayashi, Michitaka Yoshino, Tomoyoshi Mishima
    Abstract:

    A high breakdown voltage of 5.0 kV has been achieved for the first time in vertical GaN p–n Junction Diodes by using our newly developed guard-ring structures. A resistance device was inserted between the main diode portion and the guard-ring portion in a ring-shaped p–n diode to generate a voltage drop over the resistance device by leakage current flowing through the guard-ring portion under negatively biased conditions before breakdown. The voltage at the outer mesa edge of the guard-ring portion, where the electric field intensity is highest and the destructive breakdown usually occurs, is decreased by the voltage drop, so the electric field concentration in the portion is reduced. By adopting this structure, the breakdown voltage (V B) is raised by about 200 V. Combined with a low measured on-resistance (R on) of 1.25 mΩ cm2, Baliga's figure of merit was as high as 20 GW/cm2.

  • vertical gan p n Junction Diodes with high breakdown voltages over 4 kv
    IEEE Electron Device Letters, 2015
    Co-Authors: Hiroshi Ohta, Naoki Kaneda, Tomoyoshi Mishima, Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Tohru Nakamura
    Abstract:

    Vertical structured GaN power devices have recently been attracting a great interest because of their potential on extremely high-power conversion efficiency. This letter describes increased breakdown voltages in the vertical GaN p-n Diodes fabricated on the free-standing GaN substrates. By applying multiple lightly Si doped n-GaN drift layers to the p-n diode, the record breakdown voltages ( $V_{B}$ ) of 4.7 kV combined with low specific differential ON-resistance ( $R_{\mathrm{\scriptscriptstyle ON}}$ ) of 1.7 $\text{m}\Omega $ cm2 were achieved. With reducing the Si-doping concentration of the top n-GaN drift layer adjacent to the p-n Junction using well-controlled metal-organic vapor phase epitaxy systems, the peak electric field at the p-n Junction could be suppressed under high negatively biased conditions. The second drift layer with a moderate doping concentration contributed to the low $R_{\mathrm{\scriptscriptstyle ON}}$ . A Baliga’s figure of merit ( $V_{B}^{2}/R_{\mathrm{\scriptscriptstyle ON}}$ ) was 13 GW/cm2. These are the best values ever reported among those achieved by GaN p-n Junction Diodes on the free-standing GaN substrates.

L G Matus - One of the best experts on this subject based on the ideXlab platform.

  • 2000 v 6h sic p n Junction Diodes grown by chemical vapor deposition
    Applied Physics Letters, 1994
    Co-Authors: P.g. Neudeck, L G Matus, D.j. Larkin, Anthony J Powell, C S Salupo
    Abstract:

    In this letter we report on the fabrication and initial electrical characterization of the first silicon carbide Diodes to demonstrate rectification to reverse voltages in excess of 2000 V at room temperature. The mesa structured 6H‐SiC p+n Junction Diodes were fabricated in 6H‐SiC epilayers grown by atmospheric pressure chemical vapor deposition on commercially available 6H‐SiC wafers. The devices were characterized while immersed in FluorinertTM to prevent arcing which occurs when air breaks down under high electric fields. The simple nonoptimized Diodes, whose device areas ranged from 7×10−6 to 4×10−4 cm2, exhibited a 2000 V functional device yield in excess of 50%.

  • Electrical properties of epitaxial 3C- and 6H-SiC p-n Junction Diodes produced side-by-side on 6H-SiC substrates
    IEEE Transactions on Electron Devices, 1994
    Co-Authors: P.g. Neudeck, J A Powell, C S Salupo, D.j. Larkin, J.e. Starr, L G Matus
    Abstract:

    3C-SiC (/spl beta/-SiC) and 6H-SiC p-n Junction Diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of Diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC Diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC Diodes produced by previous techniques. When placed under sufficient forward bias, the SC-SiC Diodes emit significantly bright green-yellow light while the 6H SiC Diodes emit in the blue-violet. The 6H-SiC p-n Junction Diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (

  • Greatly improved 3C-SiC p-n Junction Diodes grown by chemical vapor deposition
    IEEE Electron Device Letters, 1993
    Co-Authors: P.g. Neudeck, J A Powell, C S Salupo, D.j. Larkin, J.e. Starr, L G Matus
    Abstract:

    The fabrication and initial electrical characterization of greatly improved 3C-SiC ( beta -SiC) p-n Junction Diodes are reported. These Diodes, which were grown on commercially available 6H-SiC ( alpha -SiC) substrates by chemical vapor deposition, demonstrate rectification to -200 V at room temperature, representing a fourfold improvement in reported 3C-SiC diode blocking voltage. The reverse leakage currents and saturation current densities measured on these Diodes also show significant improvement compared to previously reported 3C-SiC p-n Junction Diodes. When placed under sufficient forward bias, the Diodes emit significantly bright green-yellow light. These results should lead to substantial advancements in 3C-SiC transistor performance.

  • high voltage 6h sic p n Junction Diodes
    Applied Physics Letters, 1991
    Co-Authors: L G Matus, J A Powell, C S Salupo
    Abstract:

    A chemical vapor deposition (CVD) process has been used to produce device structures of n‐and p‐type 6H‐SiC epitaxial layers on commercially produced single‐crystal 6H‐SiC wafers. Mesa‐style p‐n Junction Diodes were successfully fabricated from these device structures using reactive ion etching, oxide passivation, and electrical contact metallization techniques. When tested in air, the 6H‐SiC Diodes displayed excellent rectification characteristics up to the highest temperature tested, 600 °C. To observe avalanche breakdown of the p‐n Junction Diodes, testing under a high‐electrical‐strength liquid was necessary. The avalanche breakdown voltage was 1000 V representing the highest reverse breakdown voltage to be reported for any CVD‐grown SiC diode.

  • High‐voltage 6H‐SiC p‐n Junction Diodes
    Applied Physics Letters, 1991
    Co-Authors: L G Matus, J A Powell, C S Salupo
    Abstract:

    A chemical vapor deposition (CVD) process has been used to produce device structures of n‐and p‐type 6H‐SiC epitaxial layers on commercially produced single‐crystal 6H‐SiC wafers. Mesa‐style p‐n Junction Diodes were successfully fabricated from these device structures using reactive ion etching, oxide passivation, and electrical contact metallization techniques. When tested in air, the 6H‐SiC Diodes displayed excellent rectification characteristics up to the highest temperature tested, 600 °C. To observe avalanche breakdown of the p‐n Junction Diodes, testing under a high‐electrical‐strength liquid was necessary. The avalanche breakdown voltage was 1000 V representing the highest reverse breakdown voltage to be reported for any CVD‐grown SiC diode.

C S Salupo - One of the best experts on this subject based on the ideXlab platform.

  • 2000 v 6h sic p n Junction Diodes grown by chemical vapor deposition
    Applied Physics Letters, 1994
    Co-Authors: P.g. Neudeck, L G Matus, D.j. Larkin, Anthony J Powell, C S Salupo
    Abstract:

    In this letter we report on the fabrication and initial electrical characterization of the first silicon carbide Diodes to demonstrate rectification to reverse voltages in excess of 2000 V at room temperature. The mesa structured 6H‐SiC p+n Junction Diodes were fabricated in 6H‐SiC epilayers grown by atmospheric pressure chemical vapor deposition on commercially available 6H‐SiC wafers. The devices were characterized while immersed in FluorinertTM to prevent arcing which occurs when air breaks down under high electric fields. The simple nonoptimized Diodes, whose device areas ranged from 7×10−6 to 4×10−4 cm2, exhibited a 2000 V functional device yield in excess of 50%.

  • Electrical properties of epitaxial 3C- and 6H-SiC p-n Junction Diodes produced side-by-side on 6H-SiC substrates
    IEEE Transactions on Electron Devices, 1994
    Co-Authors: P.g. Neudeck, J A Powell, C S Salupo, D.j. Larkin, J.e. Starr, L G Matus
    Abstract:

    3C-SiC (/spl beta/-SiC) and 6H-SiC p-n Junction Diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of Diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC Diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC Diodes produced by previous techniques. When placed under sufficient forward bias, the SC-SiC Diodes emit significantly bright green-yellow light while the 6H SiC Diodes emit in the blue-violet. The 6H-SiC p-n Junction Diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (

  • Greatly improved 3C-SiC p-n Junction Diodes grown by chemical vapor deposition
    IEEE Electron Device Letters, 1993
    Co-Authors: P.g. Neudeck, J A Powell, C S Salupo, D.j. Larkin, J.e. Starr, L G Matus
    Abstract:

    The fabrication and initial electrical characterization of greatly improved 3C-SiC ( beta -SiC) p-n Junction Diodes are reported. These Diodes, which were grown on commercially available 6H-SiC ( alpha -SiC) substrates by chemical vapor deposition, demonstrate rectification to -200 V at room temperature, representing a fourfold improvement in reported 3C-SiC diode blocking voltage. The reverse leakage currents and saturation current densities measured on these Diodes also show significant improvement compared to previously reported 3C-SiC p-n Junction Diodes. When placed under sufficient forward bias, the Diodes emit significantly bright green-yellow light. These results should lead to substantial advancements in 3C-SiC transistor performance.

  • high voltage 6h sic p n Junction Diodes
    Applied Physics Letters, 1991
    Co-Authors: L G Matus, J A Powell, C S Salupo
    Abstract:

    A chemical vapor deposition (CVD) process has been used to produce device structures of n‐and p‐type 6H‐SiC epitaxial layers on commercially produced single‐crystal 6H‐SiC wafers. Mesa‐style p‐n Junction Diodes were successfully fabricated from these device structures using reactive ion etching, oxide passivation, and electrical contact metallization techniques. When tested in air, the 6H‐SiC Diodes displayed excellent rectification characteristics up to the highest temperature tested, 600 °C. To observe avalanche breakdown of the p‐n Junction Diodes, testing under a high‐electrical‐strength liquid was necessary. The avalanche breakdown voltage was 1000 V representing the highest reverse breakdown voltage to be reported for any CVD‐grown SiC diode.

  • High‐voltage 6H‐SiC p‐n Junction Diodes
    Applied Physics Letters, 1991
    Co-Authors: L G Matus, J A Powell, C S Salupo
    Abstract:

    A chemical vapor deposition (CVD) process has been used to produce device structures of n‐and p‐type 6H‐SiC epitaxial layers on commercially produced single‐crystal 6H‐SiC wafers. Mesa‐style p‐n Junction Diodes were successfully fabricated from these device structures using reactive ion etching, oxide passivation, and electrical contact metallization techniques. When tested in air, the 6H‐SiC Diodes displayed excellent rectification characteristics up to the highest temperature tested, 600 °C. To observe avalanche breakdown of the p‐n Junction Diodes, testing under a high‐electrical‐strength liquid was necessary. The avalanche breakdown voltage was 1000 V representing the highest reverse breakdown voltage to be reported for any CVD‐grown SiC diode.

P.g. Neudeck - One of the best experts on this subject based on the ideXlab platform.

  • high field fast risetime pulse failures in 4h and 6h sic pn Junction Diodes
    Journal of Applied Physics, 1996
    Co-Authors: P.g. Neudeck, Christian Fazi
    Abstract:

    We report the observation of anomalous reverse breakdown behavior in moderately doped (2–3×1017 cm−3) small‐area micropipe‐free 4H‐ and 6H‐SiC pn Junction Diodes. When measured with a curve tracer, the Diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140–150 V. However, when subjected to single‐shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the Diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high‐field devices can operate with the same high reliability as silicon power devices.

  • 2000 v 6h sic p n Junction Diodes grown by chemical vapor deposition
    Applied Physics Letters, 1994
    Co-Authors: P.g. Neudeck, L G Matus, D.j. Larkin, Anthony J Powell, C S Salupo
    Abstract:

    In this letter we report on the fabrication and initial electrical characterization of the first silicon carbide Diodes to demonstrate rectification to reverse voltages in excess of 2000 V at room temperature. The mesa structured 6H‐SiC p+n Junction Diodes were fabricated in 6H‐SiC epilayers grown by atmospheric pressure chemical vapor deposition on commercially available 6H‐SiC wafers. The devices were characterized while immersed in FluorinertTM to prevent arcing which occurs when air breaks down under high electric fields. The simple nonoptimized Diodes, whose device areas ranged from 7×10−6 to 4×10−4 cm2, exhibited a 2000 V functional device yield in excess of 50%.

  • Electrical properties of epitaxial 3C- and 6H-SiC p-n Junction Diodes produced side-by-side on 6H-SiC substrates
    IEEE Transactions on Electron Devices, 1994
    Co-Authors: P.g. Neudeck, J A Powell, C S Salupo, D.j. Larkin, J.e. Starr, L G Matus
    Abstract:

    3C-SiC (/spl beta/-SiC) and 6H-SiC p-n Junction Diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of Diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC Diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC Diodes produced by previous techniques. When placed under sufficient forward bias, the SC-SiC Diodes emit significantly bright green-yellow light while the 6H SiC Diodes emit in the blue-violet. The 6H-SiC p-n Junction Diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (

  • Greatly improved 3C-SiC p-n Junction Diodes grown by chemical vapor deposition
    IEEE Electron Device Letters, 1993
    Co-Authors: P.g. Neudeck, J A Powell, C S Salupo, D.j. Larkin, J.e. Starr, L G Matus
    Abstract:

    The fabrication and initial electrical characterization of greatly improved 3C-SiC ( beta -SiC) p-n Junction Diodes are reported. These Diodes, which were grown on commercially available 6H-SiC ( alpha -SiC) substrates by chemical vapor deposition, demonstrate rectification to -200 V at room temperature, representing a fourfold improvement in reported 3C-SiC diode blocking voltage. The reverse leakage currents and saturation current densities measured on these Diodes also show significant improvement compared to previously reported 3C-SiC p-n Junction Diodes. When placed under sufficient forward bias, the Diodes emit significantly bright green-yellow light. These results should lead to substantial advancements in 3C-SiC transistor performance.

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