The Experts below are selected from a list of 3792 Experts worldwide ranked by ideXlab platform

Kyung Rok Kim - One of the best experts on this subject based on the ideXlab platform.

  • effects of parasitic source Drain Junction area on terahertz responsivity of mosfet detector
    IEEE Transactions on Terahertz Science and Technology, 2018
    Co-Authors: Suna Kim, Muhammad Ibrahim Wasiq Khan, Dae-woong Park, Sang-gug Lee, Kyung Rok Kim
    Abstract:

    This paper reports the effect of the source/Drain Junction area on the responsivity of a metal-oxide field-effect transistor (MOSFET)-based terahertz (THz) detector. From the numerical analysis based on the distributed-channel model for the plasma-wave detection mechanism, it is predicted that both the responsivity and noise-equivalent power (NEP) are improved with a relatively larger source Junction area than Drain Junction area. For experimental verification, three types of MOSFET detectors with different source/Drain Junction areas are fabricated with 65-nm CMOS technology. From on-wafer measurement at 0.3 THz, 2.57 times enhanced responsivity and 63% reduced NEP have been obtained in the sample with the smallest Drain Junction area and the largest source Junction area.

  • Effects of Parasitic Source/Drain Junction Area on Terahertz Responsivity of MOSFET Detector
    IEEE Transactions on Terahertz Science and Technology, 2018
    Co-Authors: Suna Kim, Muhammad Ibrahim Wasiq Khan, Dae-woong Park, Sang-gug Lee, Kyung Rok Kim
    Abstract:

    This paper reports the effect of the source/Drain Junction area on the responsivity of a metal-oxide field-effect transistor (MOSFET)-based terahertz (THz) detector. From the numerical analysis based on the distributed-channel model for the plasma-wave detection mechanism, it is predicted that both the responsivity and noise-equivalent power (NEP) are improved with a relatively larger source Junction area than Drain Junction area. For experimental verification, three types of MOSFET detectors with different source/Drain Junction areas are fabricated with 65-nm CMOS technology. From on-wafer measurement at 0.3 THz, 2.57 times enhanced responsivity and 63% reduced NEP have been obtained in the sample with the smallest Drain Junction area and the largest source Junction area.

Suna Kim - One of the best experts on this subject based on the ideXlab platform.

  • effects of parasitic source Drain Junction area on terahertz responsivity of mosfet detector
    IEEE Transactions on Terahertz Science and Technology, 2018
    Co-Authors: Suna Kim, Muhammad Ibrahim Wasiq Khan, Dae-woong Park, Sang-gug Lee, Kyung Rok Kim
    Abstract:

    This paper reports the effect of the source/Drain Junction area on the responsivity of a metal-oxide field-effect transistor (MOSFET)-based terahertz (THz) detector. From the numerical analysis based on the distributed-channel model for the plasma-wave detection mechanism, it is predicted that both the responsivity and noise-equivalent power (NEP) are improved with a relatively larger source Junction area than Drain Junction area. For experimental verification, three types of MOSFET detectors with different source/Drain Junction areas are fabricated with 65-nm CMOS technology. From on-wafer measurement at 0.3 THz, 2.57 times enhanced responsivity and 63% reduced NEP have been obtained in the sample with the smallest Drain Junction area and the largest source Junction area.

  • Effects of Parasitic Source/Drain Junction Area on Terahertz Responsivity of MOSFET Detector
    IEEE Transactions on Terahertz Science and Technology, 2018
    Co-Authors: Suna Kim, Muhammad Ibrahim Wasiq Khan, Dae-woong Park, Sang-gug Lee, Kyung Rok Kim
    Abstract:

    This paper reports the effect of the source/Drain Junction area on the responsivity of a metal-oxide field-effect transistor (MOSFET)-based terahertz (THz) detector. From the numerical analysis based on the distributed-channel model for the plasma-wave detection mechanism, it is predicted that both the responsivity and noise-equivalent power (NEP) are improved with a relatively larger source Junction area than Drain Junction area. For experimental verification, three types of MOSFET detectors with different source/Drain Junction areas are fabricated with 65-nm CMOS technology. From on-wafer measurement at 0.3 THz, 2.57 times enhanced responsivity and 63% reduced NEP have been obtained in the sample with the smallest Drain Junction area and the largest source Junction area.

Bin Zhou - One of the best experts on this subject based on the ideXlab platform.

  • Junctionless in plane gate transparent thin film transistors
    Applied Physics Letters, 2011
    Co-Authors: Jie Jiang, Bin Zhou
    Abstract:

    Junctionless transparent electric-double-layer thin-film transistors with an in-plane-gate figure are fabricated on glass substrates at room temperature. The unique feature of such Junctionless transistors is that the channel and source/Drain electrodes are the same thin indium-tin-oxide film without any source/Drain Junction. Effective field-effect modulation of Drain current can be obtained when the indium-tin-oxide thickness is reduced to 20 nm. Such Junctionless transparent thin-film transistors exhibit a good electrical performance with a small subthreshold swing ( 106), respectively. A serial-capacitor model is proposed to understand the operation mechanism.

Muhammad Ibrahim Wasiq Khan - One of the best experts on this subject based on the ideXlab platform.

  • effects of parasitic source Drain Junction area on terahertz responsivity of mosfet detector
    IEEE Transactions on Terahertz Science and Technology, 2018
    Co-Authors: Suna Kim, Muhammad Ibrahim Wasiq Khan, Dae-woong Park, Sang-gug Lee, Kyung Rok Kim
    Abstract:

    This paper reports the effect of the source/Drain Junction area on the responsivity of a metal-oxide field-effect transistor (MOSFET)-based terahertz (THz) detector. From the numerical analysis based on the distributed-channel model for the plasma-wave detection mechanism, it is predicted that both the responsivity and noise-equivalent power (NEP) are improved with a relatively larger source Junction area than Drain Junction area. For experimental verification, three types of MOSFET detectors with different source/Drain Junction areas are fabricated with 65-nm CMOS technology. From on-wafer measurement at 0.3 THz, 2.57 times enhanced responsivity and 63% reduced NEP have been obtained in the sample with the smallest Drain Junction area and the largest source Junction area.

  • Effects of Parasitic Source/Drain Junction Area on Terahertz Responsivity of MOSFET Detector
    IEEE Transactions on Terahertz Science and Technology, 2018
    Co-Authors: Suna Kim, Muhammad Ibrahim Wasiq Khan, Dae-woong Park, Sang-gug Lee, Kyung Rok Kim
    Abstract:

    This paper reports the effect of the source/Drain Junction area on the responsivity of a metal-oxide field-effect transistor (MOSFET)-based terahertz (THz) detector. From the numerical analysis based on the distributed-channel model for the plasma-wave detection mechanism, it is predicted that both the responsivity and noise-equivalent power (NEP) are improved with a relatively larger source Junction area than Drain Junction area. For experimental verification, three types of MOSFET detectors with different source/Drain Junction areas are fabricated with 65-nm CMOS technology. From on-wafer measurement at 0.3 THz, 2.57 times enhanced responsivity and 63% reduced NEP have been obtained in the sample with the smallest Drain Junction area and the largest source Junction area.

Dae-woong Park - One of the best experts on this subject based on the ideXlab platform.

  • effects of parasitic source Drain Junction area on terahertz responsivity of mosfet detector
    IEEE Transactions on Terahertz Science and Technology, 2018
    Co-Authors: Suna Kim, Muhammad Ibrahim Wasiq Khan, Dae-woong Park, Sang-gug Lee, Kyung Rok Kim
    Abstract:

    This paper reports the effect of the source/Drain Junction area on the responsivity of a metal-oxide field-effect transistor (MOSFET)-based terahertz (THz) detector. From the numerical analysis based on the distributed-channel model for the plasma-wave detection mechanism, it is predicted that both the responsivity and noise-equivalent power (NEP) are improved with a relatively larger source Junction area than Drain Junction area. For experimental verification, three types of MOSFET detectors with different source/Drain Junction areas are fabricated with 65-nm CMOS technology. From on-wafer measurement at 0.3 THz, 2.57 times enhanced responsivity and 63% reduced NEP have been obtained in the sample with the smallest Drain Junction area and the largest source Junction area.

  • Effects of Parasitic Source/Drain Junction Area on Terahertz Responsivity of MOSFET Detector
    IEEE Transactions on Terahertz Science and Technology, 2018
    Co-Authors: Suna Kim, Muhammad Ibrahim Wasiq Khan, Dae-woong Park, Sang-gug Lee, Kyung Rok Kim
    Abstract:

    This paper reports the effect of the source/Drain Junction area on the responsivity of a metal-oxide field-effect transistor (MOSFET)-based terahertz (THz) detector. From the numerical analysis based on the distributed-channel model for the plasma-wave detection mechanism, it is predicted that both the responsivity and noise-equivalent power (NEP) are improved with a relatively larger source Junction area than Drain Junction area. For experimental verification, three types of MOSFET detectors with different source/Drain Junction areas are fabricated with 65-nm CMOS technology. From on-wafer measurement at 0.3 THz, 2.57 times enhanced responsivity and 63% reduced NEP have been obtained in the sample with the smallest Drain Junction area and the largest source Junction area.